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Surface Defects: Grain Boundaries External Surfaces Stacking Faults

Grain boundaries are regions between crystals where the atomic structure is disordered. Twinning occurs when an applied stress causes atomic displacements that result in a mirrored reflection of atom positions across a twin plane. Twinning is more common in HCP crystal structures compared to FCC and BCC, takes place along defined crystallographic planes and directions, and results in smaller deformations than slip. Stacking faults disturb the perfect stacking sequence of close-packed planes in FCC materials by removing or adding an extra plane.

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1K views14 pages

Surface Defects: Grain Boundaries External Surfaces Stacking Faults

Grain boundaries are regions between crystals where the atomic structure is disordered. Twinning occurs when an applied stress causes atomic displacements that result in a mirrored reflection of atom positions across a twin plane. Twinning is more common in HCP crystal structures compared to FCC and BCC, takes place along defined crystallographic planes and directions, and results in smaller deformations than slip. Stacking faults disturb the perfect stacking sequence of close-packed planes in FCC materials by removing or adding an extra plane.

Uploaded by

AjeshSomanPullad
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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Surface defects

Grain boundaries
External surfaces
Stacking faults
1

Grain Boundaries
regions between crystals
(a) The atoms near the
boundaries of the grains
disordered.
(b) Grains and grain boundaries
in a stainless steel sample

Planar Defects in Solids Twin


boundaries

A shear force that causes atomic displacements such


that the atoms on one side of a plane (twin boundary)
mirror the atoms on the other side. A reflection of atom
positions across the twin plane.
Displacement magnitude in the twin region is
proportional to the atoms distance from the twin plane.
Takes place along defined planes and directions
depending upon the system.
Ex: BCC twinning occurs on the (112)[111] system

Twinning
(c) 2003 Brooks/Cole Publishing / Thomson Learning

Applied stress to a perfect crystal (a) may cause a displacement of the


atoms, (b) causing the formation of a twin. Note that the crystal has
deformed as a result of twinning.

Comparison between slip and


twinning mechanisms
slipping

twinning

1. the atoms in one side of the


slip plane all move equal
distances

1. the atoms move distances


proportional to their distance
from the twinning plane

2. Slip Leaves a series of


steps (lines)

2. Twinning leaves small but well


defined regions of the crystal
deformed

3. Most for FCC and BCC


structure, they have more slip
systems

3. Is most important for HCP


structure , because its small
number of slip system

4. normally slip results in


relatively large deformations

4. only small deformations result


for twinning

Properties of Twinning
Of the three common crystal structures BCC, FCC
and HCP, the HCP structure is the most likely to twin.
FCC structures will not usually twin because slip is
more energetically favorable.
Twinning occurs at low temperatures and high rates
of shear loading (shock loading) conditions where
there are few present slip systems (restricting the
possibility of slip)
Small amount of deformation when compared with
slip.

Comparison

10

Surface defect- stacking


fault

11

Stacking sequence (FCC


materials)
Basal plane Ablue

3rd plane Cred - placed


over C layer
voids
2nd plane Bpink placed
over B layer
voids
12

Stacking faults
the perfect fcc stacking ...ABCABCABC... is disturbed by the
removal of a lattice plane C
An intrinsic stacking-fault is created with the new
stacking ...ABCAB|ABCA...

13

Extrinsic stacking fault


the perfect fcc stacking ...ABCABCABC... is disturbed by
the addition of a lattice plane in between the stacking
sequence
An extrinsic stacking-fault is created with the new stacking
...ABCABACABC...

Extra plane A
(between
B&C)

14

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