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Lecture8 MOS Transistor

This document discusses field effect transistors and MOSFET devices. It provides information on NMOS and PMOS transistors, including their construction, symbols, and basic operation in different regions. The key points are: 1. NMOS and PMOS transistors are types of MOSFET devices that differ in their doping and operation polarity. 2. An NMOS operates as a closed switch when the gate voltage is above the threshold, allowing current to flow between the source and drain. A PMOS acts as a closed switch when the gate voltage is below the threshold. 3. The document explains the transistor characteristics in different operating regions like cutoff, triode, and saturation. It also provides an example calculation and

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Kartika Munir
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© © All Rights Reserved
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Download as PPT, PDF, TXT or read online on Scribd
534 views

Lecture8 MOS Transistor

This document discusses field effect transistors and MOSFET devices. It provides information on NMOS and PMOS transistors, including their construction, symbols, and basic operation in different regions. The key points are: 1. NMOS and PMOS transistors are types of MOSFET devices that differ in their doping and operation polarity. 2. An NMOS operates as a closed switch when the gate voltage is above the threshold, allowing current to flow between the source and drain. A PMOS acts as a closed switch when the gate voltage is below the threshold. 3. The document explains the transistor characteristics in different operating regions like cutoff, triode, and saturation. It also provides an example calculation and

Uploaded by

Kartika Munir
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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Field Effect

Transistors
IBM/Motorola Power PC620

Motorola MC68020
IBM Power PC 601

EE314

1.Construction of MOS
2.NMOS and PMOS
3.Types of MOS
4.MOSFET Basic Operation
5.Characteristics

Chapter 12: Field


Effect Transistors

The MOS Transistor


Polysilicon Aluminum

JFET Junction Field Effect Transistor


MOSFET - Metal Oxide Semiconductor Field Effect Transistor
n-channel MOSFET (nMOS) & p-channel MOSFET (pMOS)

The MOS Transistor


Gate Oxide
Gate
Source

Polysilicon

n+

Drain
n+

p-substrate

Bulk Contact

CROSS-SECTION of NMOS Transistor

Field-Oxide
(SiO2)

p+ stopper

Switch Model of NMOS Transistor


| VGS |

Source
(of carriers)

Open (off) (Gate = 0)

Gate
Drain
(of
carriers)
Closed (on) (Gate = 1)
Ron

| VGS | < | VT |

| VGS | > | VT |

Switch Model of PMOS Transistor


| VGS |

Source
(of carriers)

Open (off) (Gate = 1)

Gate
Drain
(of carriers)

Closed (on) (Gate = 0)


Ron

| VGS | > | VDD | VT | |

| VGS | < | VDD |VT| |

MOS transistors Symbols


D

G
S

NMOS Enhancement NMOS Depletion


D

G
S

PMOS Enhancement

B
S

NMOS with
Bulk Contact

Channe
l

JFET and MOSFET Transistorsor

Symbol

L = 0.5-10 m
W = 0.5-500 m
SiO2 Thickness = 0.02-0.1 m
Device characteristics depend on L,W, Thickness, doping levels

MOSFET Transistor Fabrication Steps

Building A MOSFET Transistor Using Silicon

http://micro.magnet.fsu.edu/electromag/java/transistor/index.html

It is done. Now, how does it


work?

n-channel MOSFET Basic Operation


Operation in the Cutoff region
pn junction:
reverse bias

iD=0

for vGS<Vt0
Schematic

When vGS=0 then iD=0 until vGS>Vt0

(Vt0 threshold voltage)

n-channel MOSFET Basic Operation


Operation in the Triode Region
For vDS<vGS-Vt0 and vGS>Vt0 the NMOS is operating in the triode region

Resistor like characteristic


(R between S & D,
Used as voltage controlled R)
For small vDS, iD is proportional
to the excess voltage vGS-Vt0

n-channel MOSFET Basic Operation


Operation in the Triode Region

2
i D K 2 v GS Vt 0 v DS v DS

W KP
K

L 2
Device parameter KP for
NMOSFET is 50 A/V2

n-channel MOSFET Basic Operation


Operation in the Saturation Region (vDS is increased)

Tapering
of the
channel
- increments
of iD are
smaller
when
vDS is
larger

When vGD=Vt0 then the channel


thickness is 0 and

i D K v GS Vt 0

n-channel MOSFET Basic Operation


Example 12.1
An nMOS has W=160 m, L=2 m, KP= 50 A/V2 and Vto=2 V.
Plot the drain current characteristic vs drain to source voltage
for vGS=3 V.
2

i D K 2 v GS Vt 0 v DS v DS
i D K v GS Vt 0

W KP
K

L 2

n-channel MOSFET Basic Operation


Example 12.1
Characteristic

Channel length
modulation
id depends on vDS in
saturation region
(approx: iD =const in
saturation region)

2
i D Kv DS

p-channel MOSFET Basic Operation


It is constructed by interchanging the n and p regions of nchannel MOSFET.
Symbol

How does p-channel


MOSFET operate?
-voltage polarities
-iD current
-schematic

Characteristic

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