Lecs 1 To 5 - Sushil
Lecs 1 To 5 - Sushil
Metallurgy
Sushil Varma
140100035
Introduction
(1)Material science
(2)Material engineering
Structure
Properties
Performan
ce
Classification of Materials
Ceramics
High moduli
Metals
Crystalline material
Composites
Elastomers
Amorphous materials
Polymers
Low density
Porous Materials
Examples: RocksandSoil(e.g.,aquifers,petroleum
reservoirs),Zeolites,Biological
tissues(e.g.bones,wood,cork), and man made materials
such as CementsandCeramics
METALS
CERAMICS
POLYMERS
DUCTILITY
HIGH
VERY LOW
LOW
CONDUCTIVITY
HIGH
VERY LOW
VERY LOW
APPEARANCE
LUSTROUS
ELASTICITY
HIGH
VERY LOW
LOW
FREE
ELECTRONS
HIGH
--------
---------
DENSITY
HIGH
LOW
VERY LOW
Thespecific strengthis
a
material'sstrength(forc
e per unit area at
failure) divided by its
density. It is also known
as
thestrength-toweight
ratio
orstrength/weight
ratio. In fiber or textile
applications, tenacity is
the
usual
measure
ofspecific
strength.
The SI unit forspecific
strengthis Pa/(kg/m3),
or N
Engineering
stress
is the load divided
by the initial crossarea.
True Stress
True
stress is the
load divided by the
cross-area at that
instant.
True Strain
True
strain is
rate of
instantaneous
increase in
instantaneous
gauge length
A comparison of typical
tensile engineering
stressstrain and
true stressstrain
behaviors. Necking
begins at point M
on the engineering
curve, which corresponds
to on the
true curve.
The corrected true stress
strain curve takes
into account the
complex stress state
within the neck
region.
STRESS-STRAIN CURVE
ELASTIC ZONE
HOOKES LAW:
MODULUS OF ELASTICITY
Modulus of elasticity is
proportional to the slope of the
interatomic forceseparation
curve
PLASTIC DEFORMATION
This can also be defined as the point after which, stress and strain
are no longer proportional
In the best way,
Yield stress is the single point on the stress strain curve at which
the tangent modulus is changing at the greatest rate with respect
to increasing strain
Atomic Structure
Ionic Bonding
Occurs between + and - ions.
Requires electron transfer.
Large difference in electronegativity required.
Example: NaCl
Na
(metal)
unstable
Na
(cation)
stable
Cl
(nonmetal
) unstable
electron
Coulombi
c
Attraction
Cl
(anion)
stable
Repulsive
energy
(e.g. e-e
repulsion)
Covalent bonding
Requires shared electrons
Electronegativities are comparable.
Atomic Orbitals:
Hybridizatio
n:
Example:
CH4
Metallic Bonding
Arises from a sea of donated valence electrons
(1, 2, or 3 from each atom).
+
+
+
+
+
+
+
+
sea of
electrons
H Cl
secondar
y
bondin
rg bon
ding
secon
da
Hydrogen
Bonding
H Cl
Space group:P63/mmc
Cell parameters:
a: 266.49 pm
b: 266.49 pm
c: 494.68 pm
: 90.000
: 90.000
: 120.000
Crystal Structures
Thecrystal latticecan be thought of as an array of 'small boxes' infinitely
repeating in all three spatialdirections. Such aunit cellis the smallest unit of
volume that contains all of the structural and symmetry information to buildup the macroscopic structure of the lattice bytranslation.
BRAVAIS LATTICES
Name
Conditions
Triclinic
a1a2a3
Monoclinic
a1a2a3
== 90
a1a2a3
=== 90
Tetragonal
a1= a2a3
=== 90
Cubic
a1= a2= a3
=== 90
Trigonal
Hexagonal
Orthorhombic
a1= a2= a3
==<12090
a1= a2a3
== 90
= 120
PACKING FRACTION : 52 %
Coordination no. = 6
(# nearest neighbors)
The body centered lattice equals the simple cubic lattice with the
addition of a lattice point in the center of each cube.
The body centered cubic lattice contains 2 lattice point per unit cell.
PACKING FRACTION : 68 %
Coordination no. =
8
All of the metals in Group IA (Li, Na, K, and
so on), the heavier metals in Group IIA (Ca,
Sr, and Ba), and a number of the early
transition metals (such as Ti, V, Cr, Mo, W,
and Fe) pack in a body-centered cubic
structure.
PACKING FRACTION : 74 %
Coordination no. =
12
Eg. Ag, Al, Au, Ca, Co, Cu, Ni, Pb, and Pt
2D Projection
Top layer
Middle layer
Bottom layer
Adapted from Fig. 3.3,
Callister 6e.
Coordination # = 12
APF = 0.74
Miller Indices
Miller Indices
3. Clear fractions
The three indices are not separated by commas and are enclosed in
curved brackets
Linear density (LD) is defined as the number of atoms per unit length whose
centers lie on the direction vector for a specific crystallographic direction
LD = number of atoms centered on direction vector
length of direction vector
LD110 = 2 atoms = 1
4R
2R
Planar Density (PD) is taken as the number of atoms per unit area that are
centered on a particular crystallographic plane
Lecture-4
i=-(h+k) or h+k+i=0
1D
(Line defects)
2D
(Surface / Interface)
3D
(Volume defects)
Vacancy
Dislocation
Surface
Twins
Impurity
Disclination
Interphase
boundary
Precipitate
Frenkel
defect
Dispiration
Schottky
defect
Grain
boundary
Faulted
region
Twin
boundary
Voids /
Cracks
Stacking
faults
Thermal
vibration
Defects
Vacancy Defects
nv= n exp(-Q/RT)
Diffusion Mechanisms
1. Excahange Mechanisms
2. Ring Mechanisms
3. Interstitial Mechanisms
4. Interstitialcy Mechanisms
5. Crowdion Mechanisms
6. vacancy Mechanisms
7.Di-Vacancy Mechanisms
8.Relaxation Mechanisms
9. Ascending Mechanisms
Dislocations
1.Edge
2. Mixed
3. Screw
DISLOCATIONS
Edge dislocation
Screw dislocation
Slip
(Dislocation
motion)
Twinning
Phase Transformation
Creep Mechanisms
S h e a r s tre s s
a
S h e a r in g s tre s s ()
Sinusoidal
relationship
Realistic curve
D is p la c e m e n t
2x
m Sin
x
G G
a
2x
m
G b
m
2 a
If b ~ a
G
m :
2
G
m :
2
DISLOCATIONS
Dislocations weaken the crystal
DISLOCATIONS
EDGE
MIXED
SCREW
Random
Structural
Geometrically necessary dislocations
Burgers Vector
Edge dislocation
Perfect crystal
RHFS:
Right Hand Finish to Start
convention
Edge dislocation
Direction of t vector
dislocation line vector
Direction of bb vector
Compressive stress
field
Tensile stress
field
Conservative
(Glide)
Motion of dislocations
On the slip plane
Motion of
Edge
dislocation
Non-conservative
(Climb)
Motion of dislocation
to the slip plane
Shear stress
Surface
step
Edge Climb
Positive climb
Removal of a row of atoms
Negative climb
Addition of a row of atoms
Screw dislocation
[1]
Slip plane 2
b
Slip plane 1
The dislocation is shown cross-slipping from the blue plane to the green plane
b
MIXED DISLOCATIONS
Mixed dislocations
Pure screw
Pure Edge
[1]
We are looking at the plane of the cut (sort of a semicircle centered in the lower left corner). Blue circles denote
atoms just below, red circles atoms just above the cut. Up on the right the dislocation is a pure edge dislocation
on the lower left it is pure screw. In between it is mixed. In the link this dislocation is shown moving in an
animated illustration.
[1] http://www.tf.uni-kiel.de/matwis/amat/def_en/kap_5/backbone/r5_1_2.html
Role of Dislocations
Slip
es
Deformation Process
Creep
Fatigue
Fracture
Diffusion
(Pipe)
Structural
Incoherent Twin
Grain boundary
(low angle)
Semicoherent Interfaces
Disc of vacancies
~ edge dislocation
Dislocation Motion
Dislocation motion leads to plastic deformation.
An edge dislocation moves in response to a shear stress applied in a
direction perpendicular to its line.
Extra half-plane at A is forced to the right; this pushes the top halves
of planes B, C, D in the same direction.
By discrete steps, the extra 1/2-plane moves from L to R by
successive breaking of bonds and shifting of upper 1/2-planes.
A step forms on the surface of the crystal as the extra 1/2-plane
exits.
98
c08f03
Slip
Energy of Dislocations
The presence of dislocation distorts the bonds and costs energy to the
crystal lattice . Hence dislocations have distortion energy associated with
them .
ESD Gb2/2
EED Gb2/2(1-v)
G ()Shear Modulus
b |b|
v Poisson ratio
Slip Systems
FCC
BCC
[1
12]
2
(1 10),(111)
[1
1
1]
2
(1 10)
Burgers vector
Extra half plane
(111)
1
1 12
2
1
111
2
(1 10)
(1 10)
Slip plane
<110>
Monoatomic BCC
<111>
Monoatomic SC
<100>
Slip systems
Crystal
Slip plane(s)
Slip direction
FCC
{111}
<110>
HCP
(0001)
<11 20>
BCC
Not close packed
[111]
Anisotropic
No clear choice
Wavy slip lines
Role of Dislocations
Slip
es
Deformation Process
Creep
Fatigue
Fracture
Diffusion
(Pipe)
Structural
Incoherent Twin
Grain boundary
(low angle)
Semicoherent Interfaces
Disc of vacancies
~ edge dislocation
Questions:
B(edge)=bsin37
Questions: