0% found this document useful (0 votes)
47 views

William Stallings Computer Organization and Architecture 7th Edition Internal Memory

The document summarizes different types of semiconductor memory used in computer systems, including dynamic RAM (DRAM), static RAM (SRAM), read-only memory (ROM), and synchronous DRAM (SDRAM). It describes the basic operation of DRAM and SRAM, how they are organized into modules, and more advanced memory technologies like error correction, extended data out DRAM, and SDRAM. The goal is to explain the internal memory technologies used within computer systems.

Uploaded by

agustin92
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
47 views

William Stallings Computer Organization and Architecture 7th Edition Internal Memory

The document summarizes different types of semiconductor memory used in computer systems, including dynamic RAM (DRAM), static RAM (SRAM), read-only memory (ROM), and synchronous DRAM (SDRAM). It describes the basic operation of DRAM and SRAM, how they are organized into modules, and more advanced memory technologies like error correction, extended data out DRAM, and SDRAM. The goal is to explain the internal memory technologies used within computer systems.

Uploaded by

agustin92
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 37

William Stallings

Computer Organization
and Architecture
7th Edition

Chapter 5
Internal Memory

http://www.cs.uncc.edu/~abw/ITCS3182S06/index.html

1
Semiconductor Memory Types

2
Semiconductor Memory
RAM
Misnamed as all semiconductor memory is
random access
Read/Write
Volatile
Temporary storage
Static or dynamic

3
4
Dynamic RAM
Bits stored as charge in capacitors
Charges leak
Need refreshing even when
powered
Simpler construction
Smaller per bit
Less expensive
Need refresh circuits
Slower
Main memory
Essentially analogue
Level of charge determines value

5
6
DRAM Operation
Address line active when bit read or written
Transistor switch closed (current flows)
Write
Voltage to bit line
High for 1 low for 0
Then signal address line
Transfers charge to capacitor
Read
Address line selected
transistor turns on
Charge from capacitor fed via bit line to sense
amplifier
Compares with reference value to determine 0 or 1
Capacitor charge must be restored
7
Static RAM
Bits stored as on/off switches
No charges to leak
No refreshing needed when powered
More complex construction
Larger per bit
More expensive
Does not need refresh circuits
Faster
Cache
Digital
Uses flip-flops
8
9
Stating RAM Structure

10
Static RAM Operation
Transistor arrangement gives stable logic state
State 1
C1 high, C2 low
T1 T4 off, T2 T3 on
State 0
C2 high, C1 low
T2 T3 off, T1 T4 on
Address line transistors T5 T6 is switch
Write apply value to B & compliment to B
Read value is on line B

11
SRAM vs DRAM
Both volatile
Power needed to preserve data
Dynamic cell
Simpler to build, smaller
More dense
Less expensive
Needs refresh
Larger memory units
Static
Faster
Cache

12
Read Only Memory (ROM)
Permanent storage
Nonvolatile
Microprogramming (see later)
Library subroutines
Systems programs (BIOS)
Function tables

13
Types of ROM
Written during manufacture
Very expensive for small runs
Programmable (once)
PROM
Needs special equipment to program
Read mostly
Erasable Programmable (EPROM)
Erased by UV
Electrically Erasable (EEPROM)
Takes much longer to write than read
Flash memory
Erase whole memory electrically

14
Organisation in detail
A 16Mbit chip can be organised as 1M of 16
bit words
A bit per chip system has 16 lots of 1Mbit
chip with bit 1 of each word in chip 1 and so
on
A 16Mbit chip can be organised as a 2048 x
2048 x 4bit array
Reduces number of address pins
Multiplex row address and column address
11 pins to address (211=2048)
Adding one more pin doubles range of values so x4
capacity (212 x4 Capacity with 211)

15
Refreshing
Refresh circuit included on chip
Disable chip
Count through rows
Read & Write back
Takes time
Slows down apparent performance

16
17
Typical 16 Mb DRAM (4M x 4)

18
Packaging

19
20
Module
Organisation
256Kbit per Chip
8 chips to
construct 256KB

21
Module Organisation (2)

22
Error Correction
Hard Failure
Permanent defect
Soft Error
Random, non-destructive
No permanent damage to memory
Detected using Hamming error correcting code

23
Error Correcting Code Function

24
25
26
Advanced DRAM Organization
Basic DRAM same since first RAM chips
Enhanced DRAM
Contains small SRAM as well
SRAM holds last line read (c.f. Cache!)
Cache DRAM
Larger SRAM component
Use as cache or serial buffer

27
28
29
Synchronous DRAM (SDRAM)
Access is synchronized with an external clock
Address is presented to RAM
RAM finds data (CPU waits in conventional DRAM)
Since SDRAM moves data in time with system clock,
CPU knows when data will be ready
CPU does not have to wait, it can do something else
Burst mode allows SDRAM to set up stream of data and
fire it out in block
DDR-SDRAM sends data twice per clock cycle (leading
& trailing edge)

30
31
IBM 64Mb SDRAM

32
SDRAM Operation

33
34
35
36
37

You might also like