Scribd
Upload
2K views

Twin Tub Process

Twin tub processes allow for separate optimization of n-type and p-type transistors. This is done by growing an epitaxial layer on a substrate with an opposite doping type. Then, wells are implanted to provide properly doped substrates for each transistor type. The process involves growing epitaxial layers, implanting wells, patterning polysilicon, adding diffusions through self-masking, and adding contact, vias and metal layers. The main advantage is each transistor threshold voltage, body effect and transconductance can be independently optimized.

Uploaded by

vmspraneeth
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
2K views

Twin Tub Process

Twin tub processes allow for separate optimization of n-type and p-type transistors. This is done by growing an epitaxial layer on a substrate with an opposite doping type. Then, wells are implanted to provide properly doped substrates for each transistor type. The process involves growing epitaxial layers, implanting wells, patterning polysilicon, adding diffusions through self-masking, and adding contact, vias and metal layers. The main advantage is each transistor threshold voltage, body effect and transconductance can be independently optimized.

Uploaded by

vmspraneeth
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
You are on page 1/ 11

Twin Tub Processes

• Twin-tub CMOS technology provides the


basis for separate optimization of the p-
type and n-type transistors.

• One can optimize independently for


threshold voltage, body effect, and the
gain associated with n- and p-devices.
Contd…
A. Starting material: an n+ or p+ substrate with lightly
doped -> "epitaxial" or "epi" layer -> to protect "latch up"
B. Epitaxy"
a. Grow high-purity silicon layers of controlled
thickness
b. With accurately determined dopant concentrations
c. Electrical properties are determined by the dopant
and its concentration in Si
C. Process sequence
a. Tub formation
b. Thin-Oxide construction
c. Source & drain implantations
d. Contact cut definition e. Metallization
• The main advantage of this process is that
the threshold voltage, body effect
parameter and the transconductance can
be optimized separately. The starting
material for this process is p+ substrate
with epitaxially grown p-layer which is also
called as epilayer.
Twin Tub Process: N-well / P-well

First place wells to provide properly-doped


substrate for n-type, p-type transistors:
Twin Tub Process: Polysilicon

Pattern polysilicon before diffusion regions:


Twin Tub Process: N+/ P+ Diffusion

Add diffusions, performing self-masking:


Twin Tub Process: Contact / Via / Metal

Start adding metal layers:


Twin-well CMOS process cross section
Twin Tub CMOS Process Cross Section
---Struggle gives Strength and Dignity....

You might also like