Types of Main Memories

Semiconductor Memories
• Random Access Memory (RAM)
• Read Only Memory (ROM)
 RAM
• Reading and writing is possible
• Both are accomplished using electrical
signals.
• Volatile – so, used only as temporary
storage.
• Two technologies
– Dynamic RAM (DRAM)
– Static RAM (SRAM)
 Dynamic RAM
• Stores data as charge on capacitors
• If capacitor is charged
– Data is 1
• Else
– Data is 0.
• Needs refreshing cycle as capacitors have a tendency of
discharging.
• The term dynamic refers to this tendency of the stored
charge to leak away, even with power continuously
applied.
• Volatile
• When read, data is lost. So, restoring need to be done.
 Dynamic RAM
• DRAM cell
– Consists of a transistor
and a capacitor.
– Transistor acts a switch
• If transistor is closed
– Allows current to flow
• Else
– No current flows
 Dynamic RAM
• Write
– Voltage signal is applied to the bit line.
• High voltage – 1
• Low voltage – 0
– Address line is activated allowing the charge to be transferred to
the capacitor
• Read
– Address line is activated
– Charge on capacitor is fed out onto a bit line and to a sense
amplifier.
– Sense amplifier compares with reference value and determines if
the cell contains 0 or 1.
– The value is restored
• Used for large memory requirements
 Static RAM
• Holds the data as long as the power is supplied
• Read operation don’t destroy the original data.
• Expensive than DRAM but shorter cycle times.
• Used for faster small memories like cache
memory.
• Uses 4 – 6 transistors to store a single bit of
data
• Less power consumption than DRAM
• Complex construction
• Digital
– Use flip-flops
 SRAM
• Transistor arrangement gives
stable logic state
• Logic State 1
– C1 high, C2 low
– T1 T4 off, T2 T3 on
• Logic State 0
– C2 high, C1 low
– T2 T3 off, T1 T4 on
• Address line controls two
transistors T5 T6.
• When signal is applied to address
line, T5 and T6 are on.
• Write – apply value to B &
complement to B
• Read – bit value is read from line
B
 SRAM DRAM
- Volatile - volatile
- Faster - slower
- smaller memory units - larger memory units
- Complex construction - simpler to build
- Don’t require - require refresh
refreshing circuit
- Cache memory - Main memory
- Larger per bit - smaller per bit
- Digital - analog
 ROM
• Can only be read
• Non-volatile
• Secured – virus do not infect the true ROM
• Applications
– Microprogramming
– Library subroutines
– System programs
– Function tables
 ROM
• Constructed from
hard – wired logic
encoded in the
silicon it self
• If the diode is
connected, it binary
1 else 0.
 Types of ROM
• Written during manufacture
– Very expensive for small runs
• Programmable (once)
– PROM
– Needs special equipment to program
• Read “mostly”
– Erasable Programmable (EPROM)
• Erased by UV
– Electrically Erasable (EEPROM)
• Takes much longer to write than read
– Flash memory
• Erase whole memory electrically
PROM
 PROM
• Programmed using a special equipment
• Programming a PROM is also called as burning
• PROM chips have a grid of columns and rows just as ordinary
ROMs do.
• The difference is that every intersection of a column and row in a
PROM chip has a fuse connecting them.
• Since all the cells have a fuse, the initial state of a PROM chip is all
1s.
• To change the value of a cell to 0, you use a programmer to send a
specific amount of current to the cell.
• The higher voltage breaks the connection between the column and
row by burning out the fuse.
• This process is known as burning the PROM.
 EPROM
•The first EPROM, an Intel 1702,
with the die and wire bonds clearly
visible through the erase window.

• Erasable programmable
• Erased using UV rays
• A little glass window is installed in the top of the ROM package,
through which you can actually see the chip that holds the memory.
• Ultraviolet light of a specific frequency can be shined through this
window for a specified period of time, which will erase the EPROM
and allow it to be reprogrammed again.
• Changes cannot be made incrementally; the complete chip must be
erased
• Fowler-Nordheim tunneling is used to change the value
 EEPROM
• Electrically erasable programmable ROM
• Commonly used for BIOS programs.
• The chip does not have to removed to be rewritten.
• The entire chip does not have to be completely erased to change a
specific portion of it.
• Changing the contents does not require additional dedicated
equipment.
– Instead of using UV light, you can return the electrons in the cells of an
EEPROM to normal with the localized application of an electric field to
each cell.
– This erases the targeted cells of the EEPROM, which can then be
rewritten.
• Fowler-Nordheim tunneling is used to change the value
Comparison of different types of
main memories
 References
• William Stallings “Computer Organization
and architecture” Prentice Hall, 7th edition,
2006