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Power Diodes

The document discusses the dynamic characteristics of power diodes during switching operations. It explains that during turn-on, the diode current rises gradually due to inductors in circuits. During turn-off, the diode current does not immediately drop to zero but goes into negative reverse recovery region before reducing, causing power losses. Key parameters that characterize switching include recovery current, recovery time, and recovery charge. The document also outlines important diode specifications such as voltage and current ratings that allow them to be selected for appropriate power electronic applications.

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Aman Hari
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© © All Rights Reserved
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Download as PPTX, PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
233 views

Power Diodes

The document discusses the dynamic characteristics of power diodes during switching operations. It explains that during turn-on, the diode current rises gradually due to inductors in circuits. During turn-off, the diode current does not immediately drop to zero but goes into negative reverse recovery region before reducing, causing power losses. Key parameters that characterize switching include recovery current, recovery time, and recovery charge. The document also outlines important diode specifications such as voltage and current ratings that allow them to be selected for appropriate power electronic applications.

Uploaded by

Aman Hari
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Lecture 04

POWER DIODES

03-01-2019
Power Diodes – Dynamic Characteristics
 Power Diodes take finite time to make transition from
reverse bias to forward bias condition (switch ON) and
vice versa (switch OFF).
 Behavior of the diode current and voltage during these
switching periods are important due to the following
reasons.
 Severe over voltage / over current may be caused by a
diode switching at different points in the circuit using the
diode.
 Voltage and current exist simultaneously during switching
operation of a diode. Therefore, every switching of the
diode is associated with some energy loss. At high
switching frequency this may contribute significantly to the
overall power loss in the diode.

April 12, 2019 NIT Calicut 2


Power Diodes – Dynamic Characteristics
 Observed Turn ON behavior of a power Diode:
 Diodes are often used in circuits with di/dt limiting inductors. The rate of
rise of the forward current through the diode during Turn ON has
significant effect on the forward voltage drop characteristics. A typical
turn on transient is shown in Fig.

April 12, 2019 NIT Calicut 3


Power Diodes – Dynamic Characteristics
 Observed Turn OFF behavior of a power Diode:

April 12, 2019 NIT Calicut 4


Power Diodes – Dynamic Characteristics
 Observed Turn OFF behavior of a power Diode:
 Salient features of this characteristics are:
 The diode current does not stop at zero, instead it
grows in the negative direction to Irr called “peak
reverse recovery current” which can be
comparable to IF.
 In many power electronic circuits (e.g. choppers,
inverters) this reverse current flows through the
main power switch in addition to the load current.
 Therefore, this reverse recovery current has to be
accounted for while selecting the main switch.
April 12, 2019 NIT Calicut 5
Power Diodes – Dynamic Characteristics
 Observed Turn OFF behavior of a power Diode:
 Salient features of this characteristics are:
 Voltage drop across the diode does not change
appreciably from its steady state value till the diode
current reaches reverse recovery level.
 In many power electric circuits (choppers, inverters)
this may create an effective short circuit across the
supply, current being limited only by the stray wiring
inductance.
 Also in high frequency switching circuits (e.g, SMPS)
if the time period t4 is comparable to switching cycle
qualitative modification to the circuit behavior is
possible.

April 12, 2019 NIT Calicut 6


Power Diodes – Dynamic Characteristics
 Observed Turn OFF behavior of a power Diode:
 Salient features of this characteristics are:
Towards the end of the reverse recovery period
if the reverse current falls too sharply, (low
value of S), stray circuit inductance may cause
dangerous over voltage (Vrr) across the device.
It may be required to protect the diode using
an RC snubber.

April 12, 2019 NIT Calicut 7


Power Diodes – Dynamic Characteristics
 Observed Turn OFF behavior of a power Diode:
 Salient features of this characteristics are:
 During the period t5 large current and voltage exist simultaneously in
the device.
 At high switching frequency this may result in considerable increase
in the total power loss.
 Important parameters defining the turn off characteristics are, peak
reverse recovery current (Irr), reverse recovery time (trr), reverse
recovery charge (Qrr) and the snappiness factor S.
 Of these parameters, the snappiness factor S depends mainly on the
construction of the diode (e.g. drift region width, doping lever,
carrier life time etc.).
 Other parameters are interrelated and also depend on S.
 Manufacturers usually specify these parameters as functions of
diF/dt for different values of IF. Both Irr and Qrr increases with IF and
diF/dt while trr increases with IF and decreases with diF/dt.

April 12, 2019 NIT Calicut 8


Power Diodes - Important Specs - RB
DC Blocking Voltage (VRDC)
Maximum direct voltage that can be applied in
the reverse direction (i.e cathode positive with
respect to anode) across the device for
indefinite period of time.
It is useful for selecting free-wheeling diodes
in DC-DC Choppers and DC-AC voltage
source inverter circuits.

April 12, 2019 NIT Calicut 9


Power Diodes - Important Specs - RB
 RMS Reverse Voltage (VRMS): It is the RMS value
of the power frequency (50/60 HZ) sine wave
voltage that can be directly applied across the
device.
 Useful for selecting diodes for controlled /
uncontrolled power frequency line commutated
AC to DC rectifiers.
 It is given by the manufacturer under the
assumption that the supply voltage may rise by
10% at the most.
 This rating is different for resistive and capacitive
loads.

April 12, 2019 NIT Calicut 10


Power Diodes - Important Specs - RB
Peak Repetitive Reverse Voltage (VRRM): This
is the maximum permissible value of the
instantaneous reverse voltage appearing
periodically across the device.
The time period between two consecutive
appearances is assumed to be equal to half the
power cycle (i.e 10ms for 50 Hz supply). T
This type of period reverse voltage may appear
due to “commutation” in a converter.

April 12, 2019 NIT Calicut 11


Power Diodes - Important Specs - RB
Peak Non-Repetitive Reverse Voltage (VRSM):
It is the maximum allowable value of the
instantaneous reverse voltage across the device
that must not recur.
Such transient reverse voltage can be
generated by power line switching (i.e circuit
Breaker opening / closing) or lightning surges.

April 12, 2019 NIT Calicut 12


Power Diodes - Important Specs - RB

April 12, 2019 NIT Calicut 13


Power Diodes - Important Specs - FB
 Maximum RMS Forward current (IFRMS): Due to
predominantly resistive nature of the forward
voltage drop across a forward biased power diode,
RMS value of the forward current determines the
conduction power loss.
 The specification gives the maximum allowable
RMS value of the forward current of a given wave
shape (usually a half cycle sine wave of power
frequency) and at a specified case temperature.
 However, this specification can be used as a
guideline for almost all wave shapes of the
forward current.
April 12, 2019 NIT Calicut 14
Power Diodes - Important Specs - FB
 Maximum Average Forward Current (IFAVM): Diodes are
often used in rectifier circuits supplying a DC (average)
current to be load.
 In such cases the average load current and the diode
forward current usually have a simple relationship.
 Therefore, it will be of interest to know the maximum
average current a diode can conduct in the forward
direction.
 This specification gives the maximum average value of
power frequency half cycle sine wave current allowed
to flow through the diode in the forward direction.
 Average current rating of a diode decreases with
reduction in conduction angle due to increase in current
“form factor”.

April 12, 2019 NIT Calicut 15


Power Diodes - Important Specs - FB
Peak Repetitive surge current rating (IFRM):
This is the peak valve of the repetitive surge
current that can be allowed to flow through the
diode for a specific duration and for specified
conditions before and after the surge.
Peak Non-Repetitive surge current (IFSRM): This
specification is similar to the previous one
except that the current pulse duration is
assumed to be within one half cycle of the
power frequency.
April 12, 2019 NIT Calicut 16
Power Diodes - Important Specs
The important specifications of the diode are
Average forward current. (to assess suitability with
a power circuit)
Reverse blocking voltage. (to assess suitability
with a power circuit)
ON state voltage. (to assess conduction loss)
OFF state current. (to assess blocking loss)
Thermal impedance. (to help thermal design)
Reverse recovery time. (to assess high frequency
switching capability)
I2t rating. (to design short circuit protection)
April 12, 2019 NIT Calicut 17
Power Diodes
The following are the three types of diodes
available for PES applications
 Schottky diodes
Rectifier diodes
 Fast diodes

April 12, 2019 NIT Calicut 18


Schottky diodes
These have low ON state voltage (approx. Vf
0.4V ) with reverse blocking capacity of less
than 100V.
These are suitable for circuits where low
conduction loss is desired.

April 12, 2019 NIT Calicut 19


Rectifier Diodes
These are suitable as rectifier diodes in line
frequency (50/60 Hz) applications.
Recovery times are not specified.
These are available for current/voltage ratings
of a few thousands of amps/volts.

April 12, 2019 NIT Calicut 20


Fast diodes
These diodes have very low recovery times
and are suitable for high frequency switching
applications.
The recovery details are fully specified for
these diodes.
Typical recovery times are a few tens of
nanoseconds.

April 12, 2019 NIT Calicut 21

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