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Small Signal Analysis: Electronics Engineering

This document discusses small signal analysis of transistors. It covers: 1) Establishing the DC operating point and replacing DC sources with small AC signals for AC analysis. 2) Computing the frequency response, gain, and node voltages as functions of input signal frequency using transistor models like the re model for BJTs and gm model for FETs. 3) Key steps in small signal analysis including setting DC sources to zero, replacing capacitors with shorts, introducing transistor models, and performing circuit analysis on the equivalent small signal circuit.

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Yvonne Pauline C. Matira
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183 views

Small Signal Analysis: Electronics Engineering

This document discusses small signal analysis of transistors. It covers: 1) Establishing the DC operating point and replacing DC sources with small AC signals for AC analysis. 2) Computing the frequency response, gain, and node voltages as functions of input signal frequency using transistor models like the re model for BJTs and gm model for FETs. 3) Key steps in small signal analysis including setting DC sources to zero, replacing capacitors with shorts, introducing transistor models, and performing circuit analysis on the equivalent small signal circuit.

Uploaded by

Yvonne Pauline C. Matira
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Small Signal Analysis

Electronics Engineering
DC Analysis
• DC biasing is used to establish fixed dc
values for the transistor currents and
voltages called the dc operating point or
quiescent point.
• Establishes the dc operating point (Q-
point)
AC Analysis
• Frequency Response
• Low and High Cut-off Frequency
• Gain
• Computes the complex values of the node
voltages of a linear circuit as a function of
frequency of a sinusoidal signal applied at
the inputs
AC Analysis
• Small Signal Analysis
• Large Signal Analysis
Transistor Models
• BJT
– re model
– Hybrid model
• FET
– gm Model
Important Parameters
• Using two port model
Linear Amplification Process

Floyd, T. L. (2012). Electronic Devices: Conventional Current Version (9th ed.).


Jurong, Singapore: Pearson Education South Asia Pte Ltd.
re Model
• Common Base
– The base-to-emitter junction of the transistor
is forward bias (a diode can be used to model
the junction)
– The base-to-collector is reversed biased thus
it has an almost infinite impedance
(dependent current source)
Common Base

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Common Base w/ ro

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Common Emitter

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Common Emitter

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Small Signal Analysis Procedure
• Setting all the DC sources to zero
• Replace all the capacitor by a short-circuit
• Removing all the elements bypassed by
the short circuit
• Redraw the network
• Introduce the equivalent model of the
transistor in the circuit
Small Signal Analysis Procedure
• Perform DC Analysis
• Compute for internal model parameters
• Draw the AC small signal equivalent
• Perform the circuit analysis
Example 1
• Determine re
Zi, Zo, and Av

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 2 (bypassed)
• Determine re
Zi, Zo, and Av

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 3 (unbypassed)
• Without CE
Determine re
Zi, Zo, and Av

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
gm Model

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Zi and Zo
JFET equivalent circuit

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 1
• Determine gm
rd ,Zi, Zo, and Av
given yos = 40us
- Determine AV
Ignoring the value
of rd

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Example 2
• Determine gm
rd ,Zi, Zo, and Av
given yos = 20uS

Boylestad, Robert and Nashelsky, Loius., Electronic Devices and Circuit Theory,
(12th edition), Pearson Education Asia Pte. Ltd., 2012
Hybrid Model (h model)
• A manufacturer’s datasheet typically
specifies h (hybrid) parameters.
• hi, hr, hf, and ho
• Each of four parameters carries a second
subscript letter; e, b, and c.
Parameters

Floyd, T. L. (2012). Electronic Devices: Conventional Current Version (9th ed.).


Jurong, Singapore: Pearson Education South Asia Pte Ltd.
Relationships of h and r Parameters

• The ac current ratios, convert directly from


h parameters as follows:

Floyd, T. L. (2012). Electronic Devices: Conventional Current Version (9th ed.).


Jurong, Singapore: Pearson Education South Asia Pte Ltd.
Floyd, T. L. (2012). Electronic Devices: Conventional Current Version (9th ed.).
Jurong, Singapore: Pearson Education South Asia Pte Ltd.

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