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Dmos and VMOS

Power MOSFETs have a vertical structure and are designed to handle significant power levels. The DMOS uses a double diffusion process to form the source and channel regions, while the VMOS has a V-shaped gate that increases the cross-sectional area of the source-drain path. Key characteristics of power MOSFETs are their high commutation speed, good efficiency at low voltages, breakdown voltage, and on-resistance.

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1K views

Dmos and VMOS

Power MOSFETs have a vertical structure and are designed to handle significant power levels. The DMOS uses a double diffusion process to form the source and channel regions, while the VMOS has a V-shaped gate that increases the cross-sectional area of the source-drain path. Key characteristics of power MOSFETs are their high commutation speed, good efficiency at low voltages, breakdown voltage, and on-resistance.

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Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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You are on page 1/ 16

By: Cody Neubarth

Date: 4/27/16

Abstract
Power MOSFETS are designed to handle significant power levels. It’s
main advantages are its high commutation speed and good efficiency
at low voltage levels. Power MOSFETS have a vertical structure rather
than a planar structure.
Outline
 DMOS
 What is a DMOS?
 DMOS Structure
 DMOS Applications

 VMOS
 What is a VMOS?
 VMOS Structure
 VMOS Applications
DMOS what is it?
 Double-diffused MOSFET (DMOS)
 A power MOSFET in which the source
and channel regions are formed using a
double diffusion process
 Used in switching applications with high
voltage and high frequencies
DMOS Structure
 p-substrate region and the n+ source contact
are diffused through a common window
defined by edge of gate
 p-base region is diffused deeper than the n+
source
 Result: difference in the lateral diffusion
distance between p-base and the source
defines the surface channel length

http://www.circuitstoday.com/wp-content/uploads/2010/07/DMOS-Structure.jpg
DMOS Structure
 Electrons enter the Cross-section of DMOS
source terminal and flow
laterally through the
inversion layer under the
gate to the n-drift region.
 Once here the electrons
flow vertically through the
n-drift region to the drain
terminal.
 Conventional current
direction is from the drain Semiconductor Physics and Devices textbook by Donald A. Neamen

to the source.
DMOS Structure
 DMOS similar to BJT
 Important characteristic are the breakdown
voltage and the on-resistance
 A lightly doped drift region between the
drain contact and the channel region helps
ensure a very high breakdown voltage
DMOS Structure
 The n-drift region must be moderately
doped so that the drain breakdown voltage
is large
 The thickness of the n-drift region should
be as thin as possible in order to minimize
drain resistance
Applications of DMOS
 Automotive Control Applications
 Power supplies
 Inkjet print heads
VMOS what is it?
 Named after V-shaped gate region
 Vertical MOSFET with high current
handling capability as well as high blocking
voltage
 Consists of a double diffused n+/p layer,
which is cut by a V-shaped groove
 Metalized area over the V-groove controls
the current flow in the P region
Structure of VMOS
 V-groove cuts through the double diffused layer
creating two vertical MOSFETs
 Short gate length, which is determined by thickness
of p-type layer
 Vertical structure allows for use of low-doped drain
region which results in a high blocking voltage

http://ecee.colorado.edu/~bart/book/book/chapter7/ch7_8.htm#7_8_2
Structure of VMOS
 V shape allows device to deliver higher
amount of current from source to the drain
 Shape of the depletion region creates a
wider channel
 The V-shaped gate increases the cross-
sectional area of source-to-drain path
Structure of VMOS
 Main drawback of VMOS:
 Structure is more complicated than
traditional FETs, making it more expensive.

 UMOS
• More cross-sectional
surface area
Application of VMOS
 Hi-fi audio power amplifiers
 Broadband high frequency amplifiers
 Switching power amplifiers
Summary
 Power MOSETS have a vertical
structure of both the DMOS and VMOS
 Used in a variety of applications that
desire increased switching speeds and a
variety of voltage levels
 Doping and channel lengths contribute
to the characteristic of each of these
MOSFETs
References
 "Double-Diffused MOS (DMOS)." Electronic Circuits and
Diagrams. N.p., 22 July 2011. Web. 216 Apr. 2016.
 John. "V-Groove MOS (VMOS)." Circuits Today. 2015 Circuits
Today, Feb. 9, 2011. Web. 15 April 2016.
 Neamen, Donald A. "15.5 Power MOSFETs." Semiconductor
Physics and Devices: Basic Principles fourth edition. New
York, NY: McGraw-Hill, 2012. N. page 684-685. Print.
 Poole Ian. "VMOS Field Effect Transistor." Radio-Electronics.
Adrio Communications Ltd. Web. 13 April 2016.
 "Power MOSFET." Wikipedia. 29 December 2015. Web. 13
April 2016.
 Van Zeghbroeck, Bart. "Chapter 7: MOS Field-Effect-
Transistors." Power MOSFETs. N.p., 2011. Web. 16 April
2016.
Five Key Points
 Main advantages are high commutation
speed and good efficiency at low voltages
 Power MOSFETS have a vertical structure
rather than planar
 DMOS uses double diffusion process
 V-shaped gate in VMOS increases cross-
sectional area of the source-to-drain path
 Most important characteristics are the
breakdown voltage and the on-resistance

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