Jx = enmd Ex

s
V
I
R
V V
l
(Ag-Cu)
 The failure of Drude model
• It can explain the electric conduction, not thermal
conductivity and heat capacity
• Electronic heat capacity
– (Drude) 3
Cel  R
2
– Experimental result
CV  T  T 3

Need more sophisticated model (Sommerfeld or

Quantum mechanics)
 450
Ag

Thermal conductivity,  (W K-1 m-1)

400
Ag-3Cu Cu
Ag-20Cu
300  Au
= T CWFL
s
Al
200
Be
W
Mg
Mo
100 Ni Brass (Cu-30Zn)
Bronze (95Cu-5Sn)
Steel (1080)
Pd-40Ag
0 Hg
0 10 20 30 40 50 60 70
Electrical conductivity, s106 -1 m-1

Fig. 2.20: Thermal conductivity,  vs. electrical conductivity s for

various metals (elements and alloys) at 20 °C. The solid line
represents the WFL law with CWFL  2.44108 W  K-2.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca
 50000

Thermal conductivity,  (W K-1 m-1)

10000 Copper

1000 Aluminum

100 Brass (70Cu-30Zn)

Al-14%Mg

10
1 10 100 1000
Temperature (K)

Fig. 2.21: Thermal conductivity vs. temperature for two pure metals
(Cu and Al) and two alloys (brass and Al-14%Mg). Data extracted from
Thermophysical Properties of Matter, Vol. 1: Thermal Conductivity,
Metallic Elements and Alloys, Y.S. Touloukian et. al (Plenum, New
York, 1970).
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca
 Thermal conductivity and resistance
T Q = T/
T
Hot Cold

Q Q Q
A

L

(a) (b)

Fig. 2.23: Conduction of heat through a component in (a)

can be modeled as a thermal resistance  shown in (b) where
Q = T/.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca
 Thermal
Pure metal Nb
conductivity
Fe Zn W
and
Al
resistance
Cu Ag
 (W m-1 K-1) 52 80 113 178 250 390 420
Metal alloys Stainless 55Cu-45Ni 70Ni- 1080 Bronze Brass Dural (95Al-
Steel 30Cu Steel (95Cu- (63Cu- 4Cu-1Mg)
5Sn) 37Zn)
 (W m-1 K-1) 12 - 16 19.5 25 50 80 125 147

Ceramics and Glass- Silica- S3N4 Alumina Saphire Beryllia Diamond

glasses borosilicate fused (Al2O3) (Al2O3) (BeO)
(SiO2)
 (W m-1 K-1) 0.75 1.5 20 30 37 260 ~1000

Polymers Polypropyl PVC Polycarb Nylon Teflon Polyethyle Polyethylene

ene onate 6,6 ne high density
low density
 (W m-1 K-1) 0.12 0.17 0.22 0.24 0.25 0.3 0.5
Thin Metal Films and Integrated Circuit
Interconnection
Grain 1
Grain 2

Grain
Boundary
(a) (b)

Fig. 2.31: Grain boundaries cause scattering of the electron and

therefore add to the resistivity by Matthiessen's rule. For a very
grainy solid, the electron is scattered from grain boundary to grain
boundary and the mean free path is approximately equal to the
mean grain diameter.
From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca
 Thin Metal Films and Integrated Circuit
Interconnection

Jx
D

Fig. 2.32: Conduction in thin films may be controlled by

scattering from the surfaces.

From Principles of Electronic Materials and Devices, Second Edition, S.O. Kasap (© McGraw-Hill, 2002)
http://Materials.Usask.Ca
 Electromigration(I)

The variation of all these microstructural parameters

over a film causes a non-uniform distribution of atomic
flow rate. Therefore non-zero atomic flux divergence
exists at the places where the number of atoms flowing
into the area is not equal to the number of atoms
flowing out of that area per unit time. With the non-
zero atomic flux divergence, there will be either a mass
depletion (divergence > 0) or accumulation (divergence
<0), leading to formation of voids and hillocks
 Electromigration(II)
Electromigration causes several different kinds of failure in narrow interconnect. The most
familiar are void failures along the length of the line (called internal failures) and diffusive
displacements at the terminals of the line that destroy electrical contact. Recent research has
shown that both of these failure modes are strongly affected by the microstructure of the line
and can, therefore be delayed or overcome by metallurgical changes that alter the
microstructure.
Electromigration is generally considered to be the result of momentum transfer from the
electrons, which move in the applied electric field, to the ions which make up the lattice of the
interconnect material.
When electrons are conducted through a metal, they interact with imperfections in the lattice
and scatter. Scattering occurs whenever an atom is out of place for any reason. Thermal energy
produces scattering by causing atoms to vibrate. This is the source of resistance of metals. The
higher the temperature, the more out of place the atom is, the greater the scattering and the
greater the resistivity.

Electromigration resistance of Cu process is 10x ~ 100x better than Al

process. Via resistance of Cu process is 10x lower than Al process. Sheet
resistance of Cu process is about 30% lower than Al process.