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Small Signal Operation and Model: Assignment-3

This document discusses small signal operation and modeling of an analog MOSFET circuit. It contains the following key points: 1. It defines the DC bias point and derives an expression for the signal current in the drain as a function of the input signal vgs. 2. It derives an expression for the voltage gain of the MOSFET as the transconductance gm multiplied by the drain resistance RD. 3. It presents the small signal equivalent circuit model of the MOSFET, modeling it as a voltage controlled current source with output resistance ro in parallel with RD.

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Keshavamurthy L
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24 views

Small Signal Operation and Model: Assignment-3

This document discusses small signal operation and modeling of an analog MOSFET circuit. It contains the following key points: 1. It defines the DC bias point and derives an expression for the signal current in the drain as a function of the input signal vgs. 2. It derives an expression for the voltage gain of the MOSFET as the transconductance gm multiplied by the drain resistance RD. 3. It presents the small signal equivalent circuit model of the MOSFET, modeling it as a voltage controlled current source with output resistance ro in parallel with RD.

Uploaded by

Keshavamurthy L
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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ANALOG CIRCUIT -18EC42

ASSIGNMENT-3

SMALL SIGNAL OPERATION AND MODEL


Topics

Dc bias point
Signal current in the drain thermal
Voltage gain
Small signal equivalent
transconductance
 DC BIAS POINT
•The
  Dc bias current ID can be found by setting the signal Vgs to
zero
Thus
ID= K’n
The dc voltage at drain VD is given by
VD= VDD – IDRD

To ensure saturation region operation,we must Have

VD >VGS –Vt
 THE SIGNAL CURRENT IN THE DRAIN
TERMINAL

•   the input signal vgs is applied , the total instantaneous gate tyo source voltage is
When
given by
VGS = VGS + vgs ->(1)
The total current ID Is given by
ID = K ’ n -> (2)
Substituting equation in equation 2
ID = K ’ n
•   WE KNOW,
 (a + b - c)2 = a2 + b2 + c2 + 2ab - 2bc - 2ca

ID = K’n (V2GS + V2gs + V2t +2VGS vgs -2 Vgs vt - 2 VGS Vt)


= K’n + K’n 2(VGS - Vt) Vgs + K’n V2gs
First term represents dc bias current ID
Second term represents a current component i.e directly propotional to input
signal Vgs
Third term represents a current component i,.e directly propotional to the
square of the input signal.
•The
  last term is undesirable because ot represents non linear distortion. To
reduce the non linear distortion introduced ,the input signal should be kept
small ,so that
K’n v2gs << K’n (VGS -vt) vgs
vgs << 2( VGS - Vt)

or vgs << 2 Vov where vov is over drive voltage at which transistor is
operating
If the above condition is satisfied then third time can be neglected
•Then
 
i d ~ ID + i d

Whee id = K’n (VGS -vt) vgs -> 3

The MOSFET transcoundance is given by


Gm = K’n vov

fig below represents interpretation of small signall enhancement MOSFET


amplifier
•

• Small signal operation of MOSFET amplifier


 THE VOLTAGE GAIN
The total instantaneous voltage vd is given by

Vd = vDD – IDRD

Under the small signal condition we have


Id = I D + i d

Thus,
Vd = vDD –(ID + id)RD

Vd = vDD –IDRD + idRD

Vd = vD– idRD

Vd = vD– vd
•  Where vd = -id RD is signal component of drain voltage
• vd = -id RD=-gmvgsRD

• Voltage gain AV=


• AV = -gm RD
 SMALL –SIGNAL EQUIVALENT CIRCUIT MODELS
Form the signal point of view. The MOSFET behaves as a voltage controlled
current source. It accepts a signal vgs between gate and source and provides a
current gm vgs at the drain therminal.
The input resistance of this controlled source is very high ideally infinite. The
resistance i.e. the resistance looking into the drain is also high.
Assuming output resistance is infinite, in the analysis of MOSFET amplifier
circuit , the transistor can be replaced by the equivalent model as shown in
below fig (a)
For small signal analysis , ideal constant dc voltage sources are replaced by
short circuits.
• Since the siganal current of an ideal constant dc current source will always be
Zero , an ideal constant dc current source can be replaced by an open circuit
in the small signal circuit of the amplifier.
•  It is assumed that drain current in saturation is independent of drain voltage.
However , the drain current does depend on vds.
• Considering the output resistance ro , the small signal equivalent circuit is
shown in fig (b)
The value of ro is given by
ro = =
Where VA is called MOSFET parameter.

Considering ro , the voltage gain expression is modified as


AV = = -gm (rd || ro)
Since the finite output resistance ro and the resistance ro and the resistance RD
are in parallel ,then the effect is reduction in the magnitude of voltage gain.
•
 
THE TRANSCONDUCTANCE g m
The MOSFET transconductance is given by

gm= K’n (VGS – Vt)


gm= K’n vov ->1
Above eqn indicates , gm is propotional to transconductance parameter K’n aspect ratio and
over drive voltage vov
Drain current ID is given by
ID= ½ K’n
ID= ½ K’n

VOV= ->2
•Substituting
  eqn 2 in eqn 1
gm=
gm=
=
=

gm=
From,
Nithin L
USN: 4AD19EC418
C SECTION

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