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Measurement Techniques (Diffusion)

This document discusses various measurement techniques used to determine parameters related to diffusion, including junction depth, sheet resistance, and diffusion profiles. Junction depth can be measured using chemical staining or optical interference patterns. Sheet resistance is commonly measured using four-point probe or Van der Pauw techniques. Diffusion profiles are analyzed using C-V profiling, spreading resistance measurements, or secondary ion mass spectroscopy (SIMS).

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Navdeep Singh
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283 views

Measurement Techniques (Diffusion)

This document discusses various measurement techniques used to determine parameters related to diffusion, including junction depth, sheet resistance, and diffusion profiles. Junction depth can be measured using chemical staining or optical interference patterns. Sheet resistance is commonly measured using four-point probe or Van der Pauw techniques. Diffusion profiles are analyzed using C-V profiling, spreading resistance measurements, or secondary ion mass spectroscopy (SIMS).

Uploaded by

Navdeep Singh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Measurement Techniques(Diffusion)

Dr. Rohan Gupta


A.P,ECE
Measurement Techniques(Diffusion)
Diffusivity an important parameter in diffusion
study must be determined experimentally.
To determine diffusivity some measurement
techniques are discussed to determine :
1. Junction Depth
2. Sheet Resistance
3. Profile Measurement
Junction Depth Measurement
Commonly measured by chemical staining the sample
by a mixture of HF & few drops of HNO3.
Put sample under strong illumination for 1-2 minutes,
p-type region will be stained darker than the n-type
region.
Junction Depth Measurement
Using Interference–fringe techniques of Tolansky,
the junction depths can be measured accurately
from 0.5 micron to 100 microns.
Interference & Optical patterns are formed
because of interaction between reflections from
diffused surface & diffused/substrate interface.
Based on these optical interference patterns,
thickness can be obtained.
Sheet Resistance Measurement
Four Point Probe technique
The sheet resistance Rs is given by:
Rs = (V/I). CF
- Rs is sheet resistance
- V is the dc voltage across the voltage probes(in volts)
- I is constant dc current passing through the current
probes(in amperes)
- CF is correction factor.
The most often used probe set has 4 probes in line with dc current
passing through outer two probes & voltage measured across
inner two probes.
Sheet Resistance Measurement
Four Point Probe technique
Sheet Resistance Measurement
Van der Pauw Technique
Sheet resistance of a sample with an irregular shape can be
determined using the Vander Pauw technique.
Measurement consists of attaching four contact points
along the periphery of sample.
Current is forced to flow between two adjacent contacts &
voltage across the other pair of contacts is measured with a
high input impedance voltmeter
Sheet Resistance Measurement
Van der Pauw Technique
Sheet Resistance Measurement
Vander Pauw Technique
 The resistivity of sample is:
ρ = πd/ln2[ (R12,34 + R23,41 )/2]/ F(Q)

where R12,34 = V12/ I34


& R23,41 = V23/ I41

F(Q) is correction factor & ‘d’ is sample thickness.


where Q= R12,34 / R23,41
Profile Measurements
Simple measurement of the junction depth & sheet
resistance of a diffused layer useful for process monitoring
but inadequate for diffusion study when depends on
impurity concentration.
Measurement techniques for diffusion profile
measurements are:
- C-V technique
- Spreading Resistance Technique
- SIMS Technique
C-V Technique
In case of p-n junction the space charge capacitance is a function of the reverse –
bias voltage.
For an abrupt junction, where the impurity concentration is very high on one
side of the junction & decreases to a low value abruptly on other side (i.e. n +p or
p+n ) junction-

 C(x) = 2/(q εs d/dV[1/C(V)]2) = [C3 (V)/ q εs ]. 1/[d C(V)/dv]


where
C(x) = is impurity concentration at space-charge layer edge
C(V)= is junction reverse-bias capacitance per unit area at a reverse
voltage ‘V’
εs = dielectric permittivity of silicon
C-V Technique
 V = VR + Vbi
where ‘VR’ is the applied reverse bias & ‘ Vbi ‘ is built in
potential of p-n junction

Vbi = (kT/q) ln (CA CD / ni2 ) =( kT/q)ln (NAND/ni2 )

where CA (or NA ) is acceptor concentration


CD ( or ND ) is donor concentration.
Spreading Resistance technique
For higher doping concentration spreading resistance
technique is used.
A two point probe is used to measure resistivities
sequentially at a no. of points starting from diffused layer
surface to the interface.
By correlating change of resistivity between each point
with carrier concentration the doping concentration & its
profile are deduced.
This technique is capable of measuring a wide range of
doping concentration ( 1014 to 1020 /cm3 )
SIMS Technique
Secondary – Ion Mass Spectroscopy uses ions that are
accelerated by high voltage (500 to 5000eV) as the beam sputter
ions called secondary ions from surface.
These secondary ions are then analyzed with a mass
spectrometer to characterize the elemental constitutes of the
surface.
Both oxygen & Cesium ion beam are used for SIMS
measurement.
Layers of upto 1 micron can be depth profiled with this
technique.
For silicon with doping levels upto 1015 cm-3 , SIMS is the most
powerful technique for measuring the total doping profile.

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