POWER ELECTRONICS

Lecture - 2
 Insulated Gate Bipolar Transistor (IGBT)

• IGBT – Best qualities of BJT and PMOSFET.

• High Input impedance & free from secondary
break down – PMOSFET
• Low on-state power loss – BJT
• Also known as Metal Oxide Insulated Gate
Transistor (MOSIGT), Conductively Modulated
FET (COMFET), Gain – Modulated FET
(GEMFET), Insulated Gate Transistor (IGT).
Basic Structure
 Basic Structure
• Same as MOSFET
• n+ layer substrate at drain in PMOSFET is substituted in the
IGBT by a p+ layer substrate called collector C.
• p+ substrate is called injection layer because it injects holes in
to n- layer.
• n- layer is called drift region.
• Thickness of n- layer determines the voltage blocking
capability of IGBT.
• The p layer is called body of IGBT.
• The n- layer in between p+ and p regions serves to
accommodate the depletion layer of pn- junction.
Equivalent Circuit
 Equivalent Circuit
• p+, n-, p layers – if we move vertically up from
collector to emitter.
• IGBT – combination of MOSET and p+n-p
transistor.
• Rd is the resistance offered by n- drift region.
• Rch is the n channel resistance.
Equivalent Circuit
 Equivalent Circuit
• Transistor Q1 – p+n-p
• Rby – p body resistance
• Transistor Q2 – n-pn+
• IGBT structure is equivalent to two transistors
Q1 and Q2.
• Collector p of Q1 is same as base of Q2.
• Base n- of Q1 is same as collector of Q2
 Equivalent Circuit
• Two transistor with parasitic thyristor.
 Working
• Collector is made positive wit respect to emitter – IGBT gets forward biased.
• With no voltage between gate and emitter two junctions between n- and p region are reverse biased – no
current flows from collector to emitter.
• Gate voltage is made positive with gate emitter voltage more than threshold Vget of IGBT, an n channel or
inversion layer is formed as in the case of PMOSFET just beneath the gate.
• This short circuits n+ region and n- region.
• Electrons from n+ region begins to flow n- region through n channel.
• As Collector is +ve p+ collector region injects holes in to n- drift region.
• In short n- is flooded with electrons from p-body region and holes from p+ region.
• Injection carrier density of n- region which results in conductivity and hence IGBT is turned on which
causes the flow of collector current.
 Working
• Collector current constitutes of hole current Ih and electron current Ie
• Ih – due to injected holes from collector of transistor Q1, p body region, Rby and emitter.
• Ie – Due to injected electrons from collector, p+, n-, n – channel resistance Rch, and emitter.
• Ic = Ih +Ie
• Major component o collector current is Ie .
• Current path through p+, n-, drift resistance Rd, and n-channel resistance Rch.
• Voltage drop = Ic.Rch + Ic. Rd + Vj1
• Ic. Rch is due to n – channel resistance almost same as PMOSFET.
• Ic. Rd is much less than PMOSFET. – due to increase in conductivity by injecting holes and electrons in n
– region .
• Due to this conductivity low on state drop.
 Latch up in IGBT
• IGBT consists of Q1 and Q2
• When IGBT is ON hole current flows through p+n-p, p body resistance Rby.
• If load current Ic is large, hole component Ih will be large which will increase the voltage
drop (Ih. Rby) which may forward bias the base p emitter n+ junction of Q2 which in turn
forward bias Q1.
• The parasitic thyristor consisting of Q1 and Q2 eventually latches on through regenerative
action when sum of their current gains α1+ α2 reaches unity as in conventional thyristor.
• With parasitic thyristor on IGBT latches up and after this collector emitter current is no
longer under the control of gate terminal.
• IGBT on and cannot be off by reducing gate voltage.
• It will be done by forced commutation.
• If this latch up is not aborted quickly excessive power dissipation may destroy the IGBT.
• The latch up occurs when Ice exceeds a certain critical value.
• Maximum permissible value is specified by manufacturer.
IGBT Characteristics
 IGBT Characteristics
• Output Characteristics Ic vs Vce.
• In the forward direction the shape of output
characteristics is similar to BJT.
• Controlling parameter is Vge because IGBT is
voltage controlled device.
• Vrm – maximum reverse breakdown voltage.
• Transfer characteristics Ic vs Vge similar is power
MOSET.
• For Vge<Vget IGBT is in off state.
Switching Characteristics
 Switching Characteristics
• Turn on time is defined as time between the instants of forward blocking to forward on state.
• ton = tdn+ tr
• Delay time is defined as the time for the collector emitter voltage to fall from Vce (initial collector
emitter voltage) to 0.9 Vce.
• Collector current to rise from Ice to 0.1 Ic
• Ic – final value of collector current.
• Rise time – Vce falls from 0.9 Vce to 0.1 Vce
• Ic rise from 0.1 Ic to Ic.
• toff = tdf+tf1+tf2
• tdf – delay time
• tf1 – initial fall time
• tf2 – final fall time.
• Tdf – Vge falls to Vget, Ic falls to 0.9 Ic.
• At the end of tdf, Vce begins to rise.
• tf1 – 0.9 Ic to 0.2 Ic
• Vces to 0.1 Vce
• Tf2 – 0.2 Ic to 0.1 Ic, 0.1 Vce to Vce.
 Application
• Medium power applications- DC and AC motor drives.
• UPS, power supplies, drivers for solenoids, relay and
contactors.
• High cost than BJT but popular because of lower gate
drive requirements, lower switching losses and smaller
snubber circuit requirements.
• Due to low cost and size IGBT is preferred as compared
with BJT.
• State of art of IGBT 120 V, 500 A, 0.20 to 0.25μs turn
off time, 50 kHz operating frequency
 Comparison IGBT and MOSFET
IGBT MOSFET
Gate, Emitter and Collector Gate, Drain and Source
High input impedance High input impedance
Voltage controlled device Voltage controlled device
With rise in temperature on state With rise in temperature on state
resistance is less as compared with resistance is more as compared with IGBT,
MOSFET, hence on state voltage drop will hence on state voltage drop will be more
be less as compared with MOSFET as compared with IGBT
Can be designed for high voltage rating Cannot be designed for high voltage
due to low power loss rating because of high power loss.
 Safe Operating Area (SOA) of BJT
• SOA specifies the safe operating limit of Ic vs Vce.
• For reliable operation current and voltage must lie with in this area.
• Two types of safe operating area Forward Bias Safe Operating Area (FBSOA),Reverse Bias Safe Operating
Area (RBSOA).
• FBSOA – during turn on condition (base emitter is forward biased).
• For DC and single pulse operation.
• AB is maximum limit.
• For Vce < 80 V, Ic has to be reduced to boundary BC so as to limit the junction temperature.
• For pulsed operation it can dissipate more power, it has to be with in limits.
• For pulsed operation as width of pulse decreases area increases
• RBSOA – with increase in reverse bias area decreases.
 Safe Operating Area (SOA) of PMOSFET
• ID vs VDS
• For Vds > 20 Id reduced to DE so that it does not exceed junction temperature.
• For pulsed operation as width of pulse decreases area increases
• RBSOA is same as FBSOA
 Safe Operating Area (SOA) of IGBT
•
• If Large
•
reapplied increases, RBSOA gets reduced.
value of reapplied causes the IGBT to latch up or turn on
• If Cj2 is the junction capacitance of reverse biased junction j2, then is collector
current.
• IF increases RBSOA will become smaller to avoid latch up.
 Diode Circuit and Rectifiers
• Rectifier converts AC input voltage to DC.
• Semiconductor devices are used extensively in
power electronic circuits for conversion of
power of AC to DC.
• A rectifier employing diodes is called
uncontrolled rectifier, because its average
voltage is a fixed DC voltage.
 R load
• V = iR
 RC load
• When
  switch S is closed

Where τ = RC is the time constant of RC circuit

Initial rate of change of capacitor voltage
 RL Load
•  
 LC Load

•  

• As the circuit is initially relaxed i(0) = 0 and =0

• Let ,

• Resonant frequency.
 LC Load
•  

When ,
Conduction time of diode is
•  
• i
 Performance Parameters
• Input voltage to rectifiers is usually sinusoidal.
• Output voltage should be constant with no ripples in it.
• But in real time rectified output voltage is made up of
constant dc voltage plus harmonic components.
• The wave form o input and output current depends on
the nature of the load and rectifier configuration.
• In order to evaluate the overall performance of
rectifier load combinations certain parameters relating
to their input and output must be known.
 Input performance parameters
•• Input
  power factor
– Input voltage is sinusoidal.
– AC input current is usually non sinusoidal.
– Only fundamental component of input current takes part in
extracting mean ac input power from source

= rms value of supply phase voltage

=rms value of supply phase current including fundamental and
harmonics
rms value of fundamental component of supply current
= phase angle between supply voltage and fundamental component of
supply current
 Input performance parameters
•• Input displacement factor (DF)
 
– - Input displacement angle
DF = cos
DF = Fundamental power factor.
• Input current distortion factor (CDF)

• Input current harmonic factor (HF)

= rms value of nth harmonic component

• Harmonic value is the measure of harmonic content in the input supply current.
• Greater value of HF, greater is the distortion of the input supply current.

• Higher value of CDF indicates lower value of harmonic content.

 Input performance parameters
•  Crest Factor

• = peak input current.

 Output Performance Parameters
•  
• RMS value
• y = instantaneous value of the function in
terms of t
• T = time period for one cycle of y variation
• Output dc power Pdc= V0 I0
• Pac= V0r I0r
 Output Performance Parameters
•• Rectification
  ratio

• Form Factor

• Voltage ripple factor

• Per unit average output voltage

• Current ripple factor (CRF)

• Transformer Utilization Factor (TUF)

 Single Phase half wave rectifier
• Uncontrolled rectifiers
• Half wave rectifier – Current in any one line
connected to ac source is unidirectional.
• Full wave rectifier – Current in any one line
connected to ac source is bidirectional.
 Single Phase half wave rectifier
•  R load

• Average Value of output voltage

• RMS value of output voltage

 Single Phase half wave rectifier
• Average
  value of load current

• RMS value of load current

• Peak value of load current

• Power delivered to the resistive load

• Input power factor

 Single Phase half wave rectifier
•   FOR L Load

• At ωt = 0, i0 = 0,

• Substituting 2 in 1

• Output voltage
 Single Phase half wave rectifier
•• Average
  value of output voltage V0 = 0
• At ωt = 𝜋/2,

• At ωt = 𝜋

• At ωt = 3𝜋/2,

• At ωt = 2𝜋

• Peak value is
 Single Phase half wave rectifier
• Average
  value of current

• RMS value of fundamental current I1r, is given by

• Rms value of rectified current

• Voltage across diode, VD = 0

 Single Phase half wave rectifier
• For
  C load

• Output voltage

• At ωt = 0,

• At ωt = 𝜋/2
 Single Phase half wave rectifier
• The diode stops conducting at ωt = 𝜋/2, the diode voltage is
•  

• The time origin is redefined at ωt = 𝜋/2

• At ωt = 𝜋

• At ωt = 3𝜋/2

• At ωt = 2𝜋

• At ωt = 5𝜋/2
 Single Phase half wave rectifier
•  Average value of voltage across diode

• Rms value of fundamental component of

voltage across diode

• RMS value of voltage across diode

 Thyristors
• Invented by bell laboratories in 1957
• A silicon based semiconductor device
• TRIAC, DIAC, Silicon controlled switch, Programmable unijunction transistor, GTO,
RCT etc.
• Family of semiconductor devices used for power control in AC and DC systems.
• A thyristor has characteristics similar to a thyratron tube, but in construction point of
view it belongs to transistor.
• Thus thyristor is derived from by a combination of capital letters from THYRatron and
transISTOR.
• Thyristor is a solid state device like a transistor and has characteristics similar to that
of a thyratron tube
• The thyristor is defined as
– It constitutes three or more p-n junction
– It has two stable states, an ON state and OFF state and can change its state from one to
another
 Terminal Characteristics of Thyristor
• Thyristor is a four layer, three junction, p-n-p-n semiconductor switching device.
• Three terminals anode, cathode and gate.
• It consists of four layer of alternate p-type and n-type silicon semiconductors forming three junctions J1, J2
and J3.
• The threaded portion is for tightening of heat sink with the help of nut.
• Gate terminal is kept near cathode terminal.
• The terminal connected to outer p region is called anode (A).
• The terminal connected to outer n region is called cathode (K).
• The terminal connected to inner p region is called gate (G).
 Terminal Characteristics of Thyristor
• For large current applications it needs cooling and achieved by mounting
heat sink.
• SCR voltage rating V = 10 kV, I = 3000 A, P = 30 MW.
• High power thyristor can be switched on by a low voltage supply of
about 1 A and 10 W, Power amplification = 3 x 10^6.
• Compact, high reliability and low losses.
• An SCR is so called because of silicon is used for construction and its
operation as a rectifier (very low resistance in forward conduction and
very high resistance in the reverse direction) can be controlled.
• Like diode SCR is a unidirectional device that blocks the current flow
from cathode to anode.
• Unlike diode a thyristor also blocks the current flow from anode to
cathode until is triggered by the gate terminals.
 Static I-V Characteristics of Thyristor
• Anode and cathode is connected to main source through the load.
• Gate and cathode are fed from a source Es which provides positive gate current from ate to
cathode.
• Va and Ia are the anode voltage and anode current across the thyristor terminals A and K.
• Thyristor has three basic modes of operation
– Reverse blocking mode
– Forward blocking mode (Off state)
– Forward conduction mode (ON state)
 Static I-V Characteristics of Thyristor
• Reverse blocking mode
– When cathode is made positive with respect to anode with switch S open thyristor is reverse biased.
– Junction J1 and J3 are reverse biased, J2 forward biased.
– The device behaves as two diodes connected in series with reverse voltage applied across them.
– A small reverse leakage current of order of few milliamperes flows depends on the SCR rating.
– This is reverse blocking mode called the off state and it is shown in OP.
– If reverse voltage is increased at critical break down level called reverse breakdown voltage VBR, an
avalanche occurs at J1 and J3 and the reverse current increases rapidly.
– Large current may damage the thyristor as temperature increases.
– Hence maximum reverse voltage does not exceed VBR.
– It is shown in PQ.
 Static I-V Characteristics of Thyristor
• Forward blocking mode
– When anode is made positive with respect to the cathode, with gate circuit open thyristor is forward
biased.
– Junction J1 and J3 forward biased and J2 reverse biased.
– Small current called forward leakage current flows.
– It is shown in OM.
– It is treated as open switch even in forward blocking mode.
 Static I-V Characteristics of Thyristor
• Forward conduction mode
– When the anode to cathode forward voltage is increased with gate circuit open, reverse biased
junction J2 will have an avalanche break down at a voltage called forward break over voltage (VBO).
– After this break down thyristor gets turned on with point M shifting to N and then any where
between N and K.
– NK represents the forward conduction mode.
– It can be brought from forward blocking mode to forward conduction mode by applying
• A positive gate pulse between gate and cathode
• A forward breakover voltage across anode and cathode.
 Thyristor Turn ON methods
• Forward Voltage triggering
• Gate triggering
• dv/dt triggering
• Temperature triggering
• Light triggering
 Forward Voltage triggering
• When forward voltage is applied between anode and cathode with gate circuit open junction J2 is reverse
biased.
• Depletion layer is formed across J2.
• The width of the layer decreases with increase in anode cathode voltage
• With forward voltage increased further the depletion layer vanishes completely.
• At this moment reverse biased junction J2 is said to have avalanche break down at forward break over
voltage VBO.
• The name forward break over because at this voltage I –V characteristic break over and shifts to its on
state position with break over current IBO.
• At this voltage thyristor changes from off state to on state with low voltage across thyristor and large
forward current.
• J1 and J3 are forward biased and break down o junction allows free movement of carriers.
• Current depends on the load impedance
• In practice it is not preferred because it will damage the device.
• VBO and VBR are same as and are temperature dependent.
• In real time VBR is slightly more than VBO
• After avalanche breaking J2 loses its reverse blocking capability, Hence if the anode voltage is reduced
below VBO SCR will continue conduction of current.
• It can be turned off only by reducing the anode current below the certain value called holding current.
 Gate Triggering
• Turning on the thyristors by gate triggering is simple, reliable and efficient.
• Usual method of firing the forward biased SCRs.
• A thyristor with forward break over voltage higher than the normal working voltage is chosen.
• Thyristor remains in forward blocking state with normal working voltage and gate open.
• A positive gate voltage is applied between gate and cathode then the charges are injected in to inner p
layer and the forward breakover voltage is reduced,
• The forward voltage at which the device switches to on state depends upon the magnitude of gate
current.
• Higher the gate current lower is forward break over voltage.
• When positive gate current is applied b/w gate and cathode, significant number of electrons from n2
layer cross junction J3.
• Because n2 layer is heavily doped as compared to p2 layer.
• After crossing J3 these electrons diffuse through p2 layer and it will swept across junction j2 in to n1
layer.
• These electrons in n1 layer reduce positive space charge on the n1 side of depletion layer.
• This results to the reduction of the width of the depletion layer J2.
• As result break over of junction J2 occurs at a lower forward voltage.
• If magnitude of gate current is further increased more electrons will reach n1 layer which reduce the
depletion layer width further, which will make thyristor ON.
 Gate Triggering
• For Ig = 0, Forward breakover voltage = VBO
• For Ig1>Ig, V1<VBO
• For Ig3>Ig2>Ig1>Ig, V3<V2<V1<VBO
• For Ig<oa, VBO is almost constant.
• For Ig1, Ig2 and Ig3, Forward break over voltages are ox=V1, oy = V2, oz=V3
 Gate triggering
• Once the SCR starts conducting Junction J2 is no longer exists, hence no gate current is required for
the device to remain in on state.
• If gate current is removed conduction of current from anode to cathode remains unaffected.
• If gate current is reduced to zero before the rising the anode current reaches the latching current
the thyristor will turn off again.
• The gate pulse has to be chosen in such a way that anode current rises above the latching current.
• Latching current is defined as the minimum value of anode current which it must attain during turn
on process to maintain the conduction when gate signal is removed.
• Once the thyristor is conducting gate looses its control.
• Thyristor can be turned off only if the forward current falls below the low level current called the
holding current.
• Holding current is defined the minimum value of anode current below which it must fall for turning
off the thyristor.
• Latching current is higher than holding current.
• Latching current is related to turn on process and holding current is related to turn off process.
• Latching current is 2 to 3 times of holding current.
 dv/dt triggering
•• With
  forward voltage J1 and J3 are forward biased and
J2 is reverse biased.
• J2 has a characteristics of capacitor due to charges
existing across junction.
• If forward voltage is applied suddenly a charging current
through junction capacitance Cj may turn on the SCR.
• The charging current is given by

As Cj is constant
 Temperature Triggering
• During forward blocking mode most of the
voltage appears across J2.
• Voltage across J2 associated with leakage current
would rise the temperature of this junction which
reduces the depletion layer width.
• This further leads to more leakage current and
therefore more junction temperature.
• This cumulative process breaks the depletion
layer and thyristor will turn on.
 Light Triggering
• LASCR
 Switching
Characteristics
Thyristor Gate Characteristics
 Thyristor Gate Characteristics
•  

Current across R1 =
Thyristor Gate Characteristics
 Thyristor Gate Characteristics
•  
 Thyristor Ratings
• Thyristor ratings indicate voltage, current, power and temperature
within which a thyristor can be used without damage or malfunction.
• For reliable operation of a thyristor, current and voltage should be
ensured that it is in the limit
• Major disadvantage of thyristor is they have low thermal time constant.
• If a thyristor handles voltage, current and power greater than its
specified ratings junction temperature may rise above the safe limit and
thyristor may get damaged.
• The manufactures make a comprehensive list of the voltage, current,
power and temperature ratings.
• A thyristor has several ratings such as voltage, current, power, dv/dt,
di/dt, turn on time, turn off time etc..
 Thyristor Ratings
• Subscripts associated with voltage and current
• First Subscript letter
–D - Forward blocking region with gate circuit open
–T - ON State
–R - Reverse
–F - Forward
• Second Subscript letter (Except for the gate G)
–W - Working value
–R - Repetitive Value
–S - Surge or non repetitive value
–T - Trigger
• Third subscript letter M denotes maximum or peak value.
• Ratings less than three subscripts wont follow these rules
• Gate ratings involve the subscript G
• A stands for anode
• AV stands for average
 Anode Voltage Ratings
• A thyristor is made up of four layers and three
junctions.
• The middle junction J2 blocks forward voltage, J1 and
J3 blocks reverse voltage.
• Anode voltage ratings indicates the values of
maximum voltage that a thyristor can withstand
without breaking of the junction area with gate circuit
open.
• For AC system the supply voltage is smooth sine wave
and transients may occur regularly or randomly.
 Anode Voltage Ratings
• VDWM – Peak working forward blocking voltage
– Maximum forward blocking voltage that a thyristor can withstand during its working.
– It is the maximum value of sine voltage value.
• VDRM – Peak repetitive forward blocking voltage
– Peak transient voltage that a thyristor can withstand repeatedly or periodically in its forward blocking
mode at allowable maximum junction temperature.
– It occur when thyristor is turned off.
– During turn off process a abrupt change in reverse current is accompanied by a spike voltage L di/dt
and this leads to VDRM
• VDSM – Peak surge (or non-repetitive) forward blocking voltage
– Peak value of forward surge voltage that does not repeat.
– It is 130% VDRM but less than break over voltage.
• VRWM – Peak working reverse voltage
– Maximum forward blocking voltage that a thyristor can withstand during its working.
– It is the maximum value of sine voltage value.
 Anode Voltage ratings
• VRRM – Peak repetitive reverse voltage
– Peak transient voltage that a thyristor can withstand repeatedly or periodically in its forward blocking mode in
reverse direction at allowable maximum junction temperature.
– It occur when thyristor is turned off.
– During turn off process a abrupt change in reverse current is accompanied by a spike voltage L di/dt and this leads to
VDRM
• VRSM – Peak surge (or non-repetitive) reverse voltage
– Peak value of reverse surge voltage that does not repeat.
– It is 130% VRRM but less than break over voltage.
– VDSM and VRSM can be increased by connecting a diode in series with a thyristor.
• VT – On-state voltage drop
– Voltage drop between anode and cathode with specified forward on state current and junction temperature.
– 1 to 1.5 V
 Anode Voltage ratings
• Forward dv/dt rating
– If rate of rise of anode forward anode to cathode voltage is
high the thyristor may turn on
• When there is no gate signal
• Anode to cathode voltage is less than forward breakover voltage.
– A high value of dv/dt at which a thyristor just gets turned
ON is called critical rate of rise of anode voltage or forward
dv/dt rating of the device.
– If applied dv/dt exceeds thyristor gets turned on.
– For applied dv/dt lower than forward dv/dt rating thyristor
remains in forward blocking mode.
 Anode Voltage ratings
• Voltage
  safety factor (VSF)
– Ratio of peak repetitive reverse voltage (VRRM) to the
maximum value of input voltage.

• Finger Voltage
– Minimum value of forward bias voltage between
anode and cathode for turning on the device by gate
triggering.
– The magnitude is more than the normal on state drop.
 Current ratings
• A small value of over currents may increase
the junction temperature above the rated
value and damage the device.
• Junction temperature depends on the current
handled by the thyristor.
• For the long life of thyristor correct choice of
current ratings is essential.
 Current ratings
• Average on state current (ITAV)
– Forward voltage drop across SCR is low, the power loss in the thyristor
depends on the average on state current.
– The significance of average on state current is illustrated by taking the DC
value and square pulses.
– Consider the continuous DC current flows through the SCR and as SCR has low
thermal time constant it reaches its rated value Tj = 125° C in short time.
 Current ratings
• Anode current with rectangular waveshape with conduction angle 180°.
• Average value is equal to DC current given in previous case OA.
• Amplitude OC = 2 x OA.
• As SCR has low thermal time constant junction temperature likely to exceed the allowable
temperature of 125°C and damage the SCR.
• In order to limit the temperature two techniques are followed
– Provide better cooling to the thyristor
– Reduce the pulse amplitude from OC
 Current ratings
• The amplitude is reduced to a lower value OD to keep the junction temperature in limits.
• As the average current is reduced, hence the thyristor is derated when it handles rectangular or square
wave.
• The effect of conduction angle on anode current is shown in figure.
• PAV = (Forward on state voltage across thyristor) x ITAV
• PAV = 1/T (instantaneous voltage across SCR) (instantaneous current through SCR) dt
• T = periodic time of anode current waveform
 Current ratings

• RMS value of current for an SCR remains constant whatever may be the conduction angle but average
current varies and depends on form factor (FF)
• ITAV = IRMS/FF
• For the same conduction angle the form factor for sine wave is higher than the rectangular wave and
hence the average current is lower for the sine wave as compared with rectangular wave
• The derating of SCR is more for sine waves than the square wave or rectangular waves.
• From the wave form for the DC value it does not terminates and prolongs as IDC value.
• For conduction angle it terminates based on FF
– 30° for rectangular ITAV= Idc/ 3.464 and for sine wave ITAV = Idc/3.979
Form Factor of Sine wave
 Current ratings
•• RMS
  on state current (IRMS)
– Direct current or RMS value
– Used as an upper limit for pulsed anode ratings
– Remains same for all conduction angle.
– For 180° conduction angle of half sine wave FF is π/2, hence
ITAV = 2IRMS/π.
– Hence SCR has to be designed to carry an average current of
2IRMS/π rather than IRMS
– The derating of SCR below the DC value depends upon the
current wave shape and it is defined as
– SCR derating below dc value =
 Current ratings
• The significance of ITAV and IRMS can be highlighted with an example
• IRMS = 35 A, For 120° conduction angle of sine wave
• ITAV = 35/1.878 = 18.637 A.
• The thyristor can handle an average current of 18.637 A for 120°
conduction angle and the temperature will remain with in limits.
• If the conduction angle is decreased to 30° to maintain the average
current 18.637 A the IRMS = 18.637 x 3.9812 = 74.1976 A.
• Hence such large current cause large ohmic losses and is going to destroy
the SCR.
• Hence ITAV has to be lowered so that the rms value is not exceeded beyond
its rated value.
• ITAV and IRMS are dependent on junction temperature and if better cooling is
these ratings can be upgraded.
 Current ratings
•
• Maximum
 
Temperature Vs ITAV

• Tj = Junction temperature
• Tc = Maximum case temperature
• Thermal resistance between junction and thyristor case
• Take = 0.15 °C/W for DC current 200 A PAV = 300 W from previous figure and is 125°C
• 125 - Tc = 0.15 x 300, Hence Tc = 80°C, plotted in the graph as A.
• Likewise B and C are plotted.
• From the graph it is evident that the lower the average current higher the case temperature.
 Surge current rating
• When thyristor is subjected to abnormal operating conditions due to faults or short circuits, it
has to accommodate the unusual working conditions by surge current rating I TSM (Peak non
repetitive on state current).
• It is defined as the maximum possible non repetitive or surge current which a device can
withstand.
• Higher currents caused by non-repetitive faults or short circuits should occur once in a while
during the life span of thyristor to prevent its degradation.
• Surge currents are the sine waves with frequency of 50 or 60 Hz depends on the supply
frequency.
• Surge current rating is specified in terms of number of surge cycles with corresponding surge
current peak.
• It is inversely proportional to duration of surge.
• Surge duration is measured in terms number of cycles of normal power frequency of 50 or 60
Hz.
• Three cycle surge current rating of 50 Hz frequency for a period of 60 msec (3 X 20 msec)
consists of three conducting half cycles followed by off period.
• Three different surge current ratings are provided by the manufacturers
• Example ITSM = 3000 A for ½ cycle, ITSM = 2100 A for 3 cycles, ITSM = 1800 A for 5 cycles.
 Surge current rating
•• One cycle surge current rating is the peak value of allowable non
 
recurrent half sine wave of 10 msec duration for 50 Hz.
• For duration less than ½ cycle, a sub cycle surge current rating is also
specified.
• The sub cycle surge current rating Isb can be determined by as

• Where
• T = time for one half cycle of supply frequency
• I = One cycle surge current rating
• = sub cycle surge current rating
• t = duration of sub cycle surge.
 2
𝐼 𝑡 𝑟𝑎𝑡𝑖𝑛𝑔
 
• It is employed in the choice of fuse or other
protective equipment of thyristors.
• The rating specifies the energy that the device
can absorb for a short time.
• It is usually specified for over loads lasting for
less than or equal to one half cycle.
 di/dt rating
• This rating indicates the maximum rate of rise of current from
anode to cathode without any harm to the device.
• When the thyristor is turned on conduction starts at a place
near the gate.
• This small area of conduction spreads to whole area of junction.
• If the rate of rise of anode current is large as compared to the
spreading velocity of carriers, local hot spots will be formed
near the gate connection on account of high current density.
• This cause the junction temperature to rise above the safe limit
and SCR gets damaged.
• Typical value will be 20 to 500 A/µ sec
 Other ratings
• Latching and Holding current
• Turn on and turn off times
• Gate circuit voltage, current and power
ratings.
 Two transistor model of a transistor

•
•  
•
The principle of thyristor operation can be explained using two transistor analogy.
Two transistor model is obtained by bisecting two middle layers in to two separate halves.
• J1 - J2 and J2 – J3 can be considered to constitute pnp and npn transistor configuration.
• In the off state of a transistor, collector current I C is related to emitter current IE

• – common base current gain

• - common base leakage current of collector base junction of as transistor
 Two transistor model of a transistor
•
• From the figure for transistor Q1, Emitter current I = anode current I and collector current
 =I . For Q1
C1
E a

•
• - common base current gain of Q1, - common base leakage current of Q1
• For Q2

• - common base current gain of Q2, - common base leakage current of Q2

• The sum of two collector currents is equal to external circuit anode current

• +
 Two transistor model of a transistor
•
• When
•  +
gate current is applied

• +
 Two transistor model of a transistor
•
•  
For a silicon transistor the current gain α is very low at low emitter current.
• With an increase in emitter current α builds up rapidly as shown in figure
• With gate current = 0 and the thyristor is forward biased is very low.
• Under these conditions from the anode current equation forward leakage current flows.
• By any method if emitter current of two component transistors are increased so that is brought to unity
the as per the above equation the anode current will become infinity.
• Actually the external load limits the anode current to a safe value after the thyristor begins conduction.
• The method of turning on a thyristor, in fact are the methods of making approach unity.
• There are various mechanisms to turn on the thyristor.
 Gate Triggering
•
• With anode positive with respect to cathode and with gate current , the anode current is due
 to forward leakage current and it is in forward blocking state.
• Now a sufficient gate drive current between gate and cathode of thyristor is applied.
• This gate drive current is equal to base current and emitter current of transistor Q2.
• With the establishment of emitter current of Q2, the current gain of Q2 increases and base
current causes the existence of collector current
 Gate Triggering
•
•  
This amplified current serves as the base current of transistor Q1.
• With flow of current collector current of Q1 comes in to existence and Q1 is turned on.
• Currents leads to the establishment of emitter current of Q1 and this cause current gain to rise as
desired.
• Now current acts as a base current of Q2 and the emitter current rises
• With rise in emitter current Ik. of Q2 increases and thus further causes to rise.
• As amplified collector current IC2, is equal to base current of Q1 rises further.
• There is thus established a regenerative action which causes reaches unity.
• When regeneration grown sufficiently gate current can be withdrawn.
• After thyristor is turned on all four layers are filled with carriers and all junctions are forward biased.
 Series and parallel operation
• SCR ratings have improved considerably since its introduction.
•  
• Presently SCRs with voltage and current ratings available are 10 kV and 3 kA.
• For some industrial applications, the demand for voltage and current ratings is so high that a single SCR cannot
fulfil.
• SCRs are connected in series in order to meet the high voltage demand and in parallel for fulfilling and high
current demand.
• For series or parallel connected SCRs it should be ensured that each SCR rating is fully utilized and the system
operation is satisfactory.
• String efficiency is used to measure the degree of utilization of SCRs in a string.

• It should need to be equal to one.

• For high string efficiency all the connected SCRs must have identical I-V characteristics.
• In real time the SCRs of same rating and specifications do not have identical characteristics unequal voltage/
current sharing bound to occur and string efficiency wont be equal to one.
• Unequal voltage/current distribution is minimized by using a external equalizing circuits.
• If one extra unit is added to the series/parallel the current/voltage shared by each device will become low than
the normal rating..
• A measure of reliability of string is given by a factor called derating factor (DRF)
•
 Series Operation
•  

• The string efficiency of two series connected SCRs

 Series Operation
•
•  
SCR1 has minimum leakage current and each of the remaining (n-1) SCRs have the same leakage current
• As SCR1 has low leakage current it will block voltage which is more than that shared by each of other (n-1)
SCRs.

• Voltage across SCR1 is

• Voltage across remaining (n-1) SCRs =

• =
Series Operation
Series Operation
Series Operation
Series Operation
Series Operation
Series Operation
Series Operation
 Parallel Operation
•
• When current required by the load more than the rated current of single thyristor, SCRs are
 connected in parallel.
• For equal sharing of currents I-V characteristics of SCRs during forward conduction must be
identical.
• The string efficiency

• Current will be distributed unequally.

 Simultaneous turn on
• For the satisfactory operation of n SCRs they should get turned on at same time.
• The importance is explained with example.
• In the n SCRs connected consider SCR1 has large turn-on time and the remaining n-1
SCRs have low turn ON time.
• Under this assumption n-1 SCRs will turn on first but the SCR1 with longer turn on
time likely to remain off.
• The voltage drop across n-1 SCRs will falls to a low value and SCR1 is subjected to this
low voltage as they are connected in parallel.
• For a given gate drive power anode to cathode voltage must have a minimum forward
voltage called finger voltage.
• If the voltage across SCR1 drops to a value less than its finger voltage then the
thyristor will not turn on.
• As a consequence the remaining n-1 SCRs have to carry the load current.
• Hence the SCRs may be damaged and overloaded because of heating caused by over
currents.
 Same temperature rise
•
•  
If one SCR1 in a parallel unit carries more current than the other SCRs then this SCR1 will have greater
junction temperature.
• As a result dynamic resistance during forward conduction decreases this further increases the current
shared by this SCR1.
• This process of anode current rise becomes cumulative and subsequently the junction temperature of
SCR1 exceeds its rated value and hence SCR gets damaged.
• This sequence may engulf another SCR and in this manner all SCRs in the string may get destroyed
permanently.
• Hence it should be ensured that all the SCRs are operating at same temperature.
 Uniform Current sharing
•
• Current sharing in parallel connected SCRs can be made uniform by connecting suitable
 resistance in series with each SCRs.
• Let are the external resistances and are the dynamic resistances of each SCR.
• The values of has to be chosen in such a way that
 Symmetrical arrangement
• Unequal current distribution in a parallel unit is also caused by the
inductive effect of current sharing conductors.
• When SCRs are arranged unsymmetrically as shown in figure the middle
conductor will have more inductive because of more flux linkages from
two nearby conductors, as a consequence less current will flow through
middle conductors.
• This unequal current distribution can be avoided by mounting the SCRs
symmetrically as shown in figure.
 Mid point reactor
• In AC circuits current distribution can be made uniform by magnetic coupling of the parallel paths.
• A tapped point A is the mid point of the reactor.
• If anode current I1 = I2 then the flux produced by the two halves of the reactor oppose each other.
• As A is the mid point the opposing flux cancels each other and there is no voltage drop in the reactor.
• If I1>I2 then the resultant flux linkages is not zero.
• Flux linkage induce emf in L1 and L2.
• Emf across reactor L1 opposes the flow of I1 whereas L2 aids the flow of I2.
• Hence I1 will be bucked and I2 will be boosted to minimize the unbalance current in parallel unit.
 Thyristor commutation
• Thyristor is turned on by applying a signal to its gate cathode circuit.
• For the purpose of power control a conducting thyristor must be turned off.
• Turning off means bringing the thyristor from forward conduction state to forward blocking state.
• Turning off the thyristor requires
– Its anode current falls below the holding current
– A reverse voltage is applied across the thyristor for a sufficient time to enable it to recover to blocking state.
• Commutation is defined as the process of turning off a thyristor.
• Once the thyristor starts conducting gate loses control over the device.
• Therefore external means may have to be adopted to commutate the thyristor.
• Classification of commutation techniques is based on the manner in which anode current is reduced to zero and on
the configuration of the commutating circuits.
• Classification of commutation techniques on the manner in which anode current is reduced to zero are
• Natural Commutation
– Class F Commutation – Line Commutation
• Forced Commutation
– Class A commutation – Load Commutation
– Class B Commutation – Resonant Pulse Commutation
– Class C Commutation – Complementary Commutation
– Class D Commutation – Impulse Commutation
– Class E Commutation – External pulse Commutation
• Thyristor commutation techniques uses resonant LC, or underdamped RLC circuits to force current or voltage of a
thyristor to zero to turn off devices
 Class A Commutation Load commutation
• For achieving load commutation of a thyristor the commutating components are connected across the load as
shown in figure.
• For low value of R capacitance C is connected in series and for high value of R Capacitance C is connected in
parallel.
• Overall circuit must be underdamped.
• When these circuits are energized from dc current waveforms are shown in figure.
• It is seen that the current i first rises to maximum value and then begins to fall.
• When current decays to zero and tends to reverse the thyristor T is turned off on its own at instant A.
• It is applied for the thyristors circuits supplied from a dc source.
• The nature of the circuit should be such that when energized from a dc source, current must have a natural
tendency to decay to zero for the load commutation to occur in the thyristor circuit.
• Load commutation is possible in dc circuits and not in ac circuits.
• Class A or load commutation is also called resonant commutation or self commutation.
 Class B commutation – Resonant-pulse Commutation

•  

• At time t1 the resonant current

•
• Capacitor voltage

•
• At t3 when thyristor is turned off when
Class F commutation – Line Commutation
 Buck Boost Converters 
• Modes Of Buck Boost Converters 
• There are two different types of modes in the buck boost converter. The following are the two
different types of buck boost converters. 
 Continuous conduction mode.
 Discontinuous conduction mode.
• Continuous Conduction Mode 
• In the continuous conduction mode the current from end to end of inductor never goes to zero.
Hence the inductor partially discharges earlier than the switching cycle.
• Discontinuous Conduction Mode
• In this mode the current through the inductor goes to zero. Hence the inductor will totally
discharge at the end of switching cycles.
• Applications of Buck boost converter
 It is used in the self regulating power supplies.
 It has consumer electronics.
 It is used in the Battery power systems.
 Adaptive control applications.
 Power amplifier applications.
• Advantages of Buck Boost Converter
 It gives higher output voltage.
 Low operating duct cycle.
 Low voltage on MOSFETs
 Boost Converter Working

• In this converter the diode is switched ON continually and for the MOSFET the square wave of high
frequency is applied to the gate terminal.
• The MOSFET is in conducting when the on state and the input current flow from the inductor L
through the MOSFET.
• The negative terminal charging up the magnetic field around the inductor.
• The D1 diode cannot conduct because the anode is on the potential ground by highly conducting the
MOSFET.
• By charging the capacitor C the load is applied to the entire circuit in the ON State and it can
construct earlier oscillator cycles.
• During the ON period the capacitor C can discharge regularly and the amount of high ripple frequency
on the output voltage.
• The approximate potential difference is given by the equation below.
VS + VL
 Boost Converter Working
• During the OFF period of MOSFET the inductor L is charged and the capacitor C is discharged.

• The inductor L can produce the back e.m.f and the values are depending up on the rate of change of
current of the MOSFET.

• The amount of inductance the coil can occupy. Hence the back e.m.f can produce any different
voltage through a wide range and determined by the design of the circuit. Hence the polarity of
voltage across the inductor L has reversed now.
• The input voltage gives the output voltage and at least equal to or higher than the input voltage.
• The diode D1 is in forward biased and the current applied to the load current and it recharges the
capacitors to VS + VL and it is ready for the MOSFET.
 Phase Controlled Converters: Single phase half wave controlled rectifier
with resistive and inductive loads
SINGLE PHASE HALF WAVE CONTROLLED RECTIFIER

• Single Phase Half Wave Controlled Rectifier with „R‟ load:

• As shown in figure below primary of transformer is connected to ac mains
supply with which SCR becomes forward bias in positive half cycle. T1 is
triggered at an angle α, T1 conducts and voltage is applied across R.
 SINGLE PHASE HALF WAVE CONTROLLED RECTIFIER
• The load current i0 flows through „R‟
• The waveforms for voltage & current are as shown above.
• As load is resistive, Output current is given as,

• Hence shape of output current is same as output voltage

• As T1 conducts only in positive half cycle as it is reversed bias in negative cycle, the ripple
frequency of output voltage is-
• fripple= 50 Hz (supply frequency) Average output voltage is given as,

• i.e Area under one cycle.

• Therefore T=2π&Vo(ωt) = Vmsinωt from α to π& for rest of the period Vo(ωt)=0

• Power transferred to load,

• Thus, power & voltage can be controlled by firing angle.

Single Phase Half Wave Controlled Rectifier with „R‟ load
Single Phase Half Wave Controlled Rectifier with ‘RL’ load:
 Single Phase Half Wave Controlled Rectifier with ‘RL’ load:
• Normally motors are inductive loads L= armature of field coil inductance

• R= Resistance of coil.
 In positive half cycle, SCR starts conduction at firing angle “α”.
 Drop across SCR is small & neglected so output voltage is equal to supply voltage.
 Due to „RL‟ load, current through SCR increases slowly.
 At „π‟, supply voltage is at zero where load current is at its max value.
 In positive half cycle, inductor stores energy & that generates the voltage.
 In negative half cycle, the voltage developed across inductor, forward biases SCR
& maintains its conduction.
 Basically with the property of inductance it opposes change in current.
 Output current & supply current flows in same loop, so all the time io=is.
 After π the energy of inductor is given to mains & there is flow of „io‟.
 The energy reduces as if gets consumed by circuit so current also reduces.
 At „β‟ energy stored in inductance is finished, hence „io‟ becomes zero & „T1‟ turns off.
 „io‟ becomes zero from „β‟ to „2π+α‟ hence it is discontinuous conduction.
 β – extinction angle
 γ=β-α
Single Phase Half Wave Controlled Rectifier with ‘RL’ load:
Single Phase Half Wave Controlled Rectifier with ‘RL’ load:
Single Phase Half Wave Controlled Rectifier with RL Load and Freewheeling Diode
Single Phase Half Wave Controlled Rectifier with RL Load and Freewheeling Diode

• The circuit consist of a thyristor T, a voltage source Vs, a diode FD across the RL load, an
inductive load L and a resistive load R.
• During the positive half cycle of the input voltage, the thyristor T is forward biased but it
does not conduct until a gate signal is applied to it.
• When a gate pulse is given to the thyristor T at ωt = α, it gets turned ON and begins to
conduct.
• When the thyristor is ON, the input voltage is applied to the load but due to the inductor
present in the load, the current through the load builds up slowly.
• During the negative half cycle, the thyristor T gets reverse biased. At this instant i.e. at ωt
= π, the load current shift its path from the thyristor to the freewheeling diode.
• When the current is shifted from thyristor to freewheeling diode, the thyristor turns OFF.
• The current through the inductor slowly decays to zero through the loop R freewheeling
diode-L.
• So here the thyristor will not conduct in the negative half cycle and turns off at ωt = π.
• So the load receives voltage only during the positive half cycle.
• The average value of output voltage can be varied by varying the firing angle α.
• The waveform shows the plot of input voltage, gate current, output voltage, output
current and voltage across thyristor.
Single Phase Half Wave Controlled Rectifier with RLE Load
Single Phase Half Wave Controlled Rectifier with RLE Load
Single Phase Half Wave Controlled Rectifier with RLE Load
Single Phase Full Wave Controlled Rectifier with R Load
 Single Phase Full Wave Controlled Rectifier
with R Load
• The circuit consist of four thyristors T1, T2, T3 and T4, a voltage source Vs and a R Load.
• During the positive half cycle of the input voltage, the thyristors T1 & T2 is forward biased
but it does not conduct until a gate signal is applied to it.
• When a gate pulse is given to the thyristors T1 & T2 at ωt = α, it gets turned ON and begins
to conduct.
• When the T1 & T2 is ON, the input voltage is applied to the load through the path VsT1-
Load-T2-Vs.
• During the negative half cycle, T3 & T4 is forward biased, the thyristor T1 & T2 gets reverse
biased and turns OFF.
• When a gate pulse is given to the thyristor T3 & T4 at ωt = π+α, it gets turned ON and
begins to conduct.
• When T3 & T4 is ON, the input voltage is applied to the load Vs-T3-Load-T4-Vs.
• Here the load receives voltage during both the half cycles.
• The average value of output voltage can be varied by varying the firing angle α.
• The waveform shows the plot of input voltage, gate current, output voltage, output current
and voltage across thyristor.
Single Phase Full Wave Controlled Rectifier with RL Load (Midpoint Converter)
 Single Phase Full Wave Controlled Rectifier with RL Load (Midpoint Converter)
• The circuit consist of two thyristors T1 and T2, a center tap transformer, a voltage source Vs and a
RL Load.
• During the positive half cycle of the input voltage, the thyristor T1 is forward biased but it does
not conduct until a gate signal is applied to it.
• When a gate pulse is given to the thyristor T1 at ωt = α, it gets turned ON and begins to conduct.
• When the thyristor T1 is ON, the input voltage is applied to the load but due to the inductor
present in the load, the current through the load builds up slowly through the path A-T1-Load-N-
A.
• During the negative half cycle, T2 is forward biased, the thyristor T1 gets reverse biased but the
current through the thyristor T1 is not zero due to the inductor and T1 does not turns OFF.
• The current through the inductor begins to decay to zero and T1 conducts for a small duration in
negative half cycle.
• When a gate pulse is given to the thyristor T2 at ωt = π+α, it gets turned ON and begins to
conduct.
• When the thyristor T2 is ON, the load current shifts its path from the T1 to T2 and thyristor T1
turns OFF at ωt = π+α.
• When T2 is ON, the current through the load builds up slowly through the path B-T2- Load-N-B.
• So here both the thyristor will conduct for a few duration in the negative half cycle.
• The load receives voltage during both the half cycles.
• The average value of output voltage can be varied by varying the firing angle α.
• The waveform shows the plot of input voltage, gate current, output voltage, output current and
voltage across thyristor.
Single Phase Full Wave Controlled Rectifier with RL Load (BRIDGE CONVERTER )
 Single Phase Full Wave Controlled Rectifier with RL Load (BRIDGE CONVERTER )

• The circuit consist of four thyristors T1, T2, T3 and T4, a voltage source Vs and a RL Load.
• During the positive half cycle of the input voltage, the thyristors T1 & T2 is forward biased but it does
not conduct until a gate signal is applied to it.
• When a gate pulse is given to the thyristors T1 & T2 at ωt = α, it gets turned ON and begins to conduct.
• When the T1 & T2 is ON, the input voltage is applied to the load but due to the inductor present in the
load, the current through the load builds up slowly through the path Vs-T1-Load-T2-Vs.
• During the negative half cycle, T3 & T4 is forward biased, the thyristor T1 & T2 gets reverse biased but
the current through them is not zero due to the inductor and does not turns OFF
• The current through the inductor begins to decay to zero and T1 & T2 conducts for a small duration in
negative half cycle.
• When a gate pulse is given to the thyristor T3 & T4 at ωt = π+α, it gets turned ON and begins to
conduct.
• When the thyristor T3 & T4 is ON, the load current shifts its path to T3 & T4 and turns OFF T1 & T2 at
ωt = π+α.
• When T3 & T4 is ON, the current through the load builds up slowly through the path Vs-T3-Load-T4-Vs.
• So here all the thyristor will conduct for a few duration in the negative half cycle.
• The load receives voltage during both the half cycles.
• The average value of output voltage can be varied by varying the firing angle α.
• The waveform shows the plot of input voltage, gate current, output voltage, output current and voltage
across thyristor.
Single Phase Full Wave Half Controlled Rectifier (Symmetrical Semi Converter)
Single Phase Full Wave Half Controlled Rectifier (Asymmetrical Semi Converter)
 Single Phase Full Wave Half Controlled Rectifier (Semi Converter)

The circuit consist of two thyristors T1 & T2, two diodes D1 and D2, a voltage source Vs, a RL Load.
During the positive half cycle of the input voltage, the thyristors T1 & D1 is forward biased but it does not
conduct until a gate signal is applied to T1.
When a gate pulse is given to the thyristors T1 at ωt = α, it gets turned ON and begins to conduct.
When the T1 & D1 is ON, the input voltage is applied to the load but due to the inductor present in the load, the
current through the load builds up.
During the negative half cycle (at ωt = π), T2 & D2 is forward biased, the thyristor T1 & D1 gets reverse biased.
The current shifts its path to D2 and T1 in case of symmetrical converter (D1 & D2 in case of asymmetrical
converter) and circulates through the load.
When a gate pulse is given to the thyristor T2 at ωt = π+α, it gets turned ON and begins to conduct.
When T2 & D2 is ON, the current through the load builds up.

During the next positive half cycle (at ωt = 2π), T1 & D1 is forward biased, the thyristor T2 & D2 gets reverse
biased.
The current shifts its path to D1 and T2 in case of symmetrical converter (D1 & D2 in case of asymmetrical
converter) and circulates through the load.
The load receives voltage during both the half cycles.
The average value of output voltage can be varied by varying the firing angle α.

The waveform shows the plot of input voltage, gate current, output voltage, output current and voltage across
thyristor.
3 Phase Half Controlled Rectifier with R Load
3 Phase Half Controlled Rectifier with R Load
3 Phase Half Controlled Rectifier with RL Load
3 Phase Half Controlled Rectifier with RL Load
3 Phase Half Controlled Rectifier with RL Load
3 Phase Full Controlled Rectifier with RL Load
 3 Phase Full Controlled Rectifier with RL Load
• The circuit consist of 6 thyristors, T1, T2, T3, T4, T5, T6, a three phase supply and a RL
load.
• The thyristors T1, T3, T5 form the positive group.
• The thyristors T4, T6, T2 form the negative group.
• Thyristors T1, T3, T4, T6 produces the full wave rectified output of Vab across the
load.
• Thyristors T3, T5, T6, T2 produces the full wave rectified output of Vbc across the
load.
• Thyristors T1, T5, T4, T2 produces the full wave rectified output of Vca across the
load.
• All these 3 outputs are given simultaneously to the same RL load.
• The effect is that all the 3 individual output mentioned above gets superimposed on
each other to get the final output.
• The waveform of the output for different firing angles are shown below.
• The average output voltage can be varied by varying the firing angle.
• For firing angle < 90, the circuit works as rectifier.
• For firing angle > 90, the circuit works as Line commutated inverter.
 Phase control
Single phase half wave voltage controller
Single phase half wave voltage controller
Single phase full wave voltage controller
Single phase full wave voltage controller
ON- OFF control or Integral cycle control
Single Phase Voltage controller with R load
Single Phase Voltage controller with R load
Single Phase Voltage controller with R load
Single Phase Voltage controller with R load
Single Phase Voltage controller with R load
Single Phase Voltage controller with R load
Single Phase Voltage controller with RL load
Cyclo converter
Cycloconverter
Single phase to single phase Step down cycloconverter
– Mid point converter – Discontinuous load current
Single phase to single phase Step down cycloconverter
– Mid point converter – Continuous load current
 Three phase half wave cycloconverters
Three phase to single phase cycloconverters
Three phase half wave cycloconverters
Three phase to single phase cycloconverters
Three phase half wave cycloconverters
Three phase to single phase cycloconverters
Single phase half bridge inverters
Single phase full bridge Inverter