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8.semicondutor Devices

1. A PN junction is formed when a P-type semiconductor is joined to an N-type semiconductor, forming a diode. 2. When the P and N regions are joined, majority carriers diffuse across the junction but are halted by an electric field, forming a depletion region. 3. A diode allows current to flow easily in one direction, blocking it in the reverse direction. This property makes diodes useful for rectification of AC to DC voltages.

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Sadia Husna
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22 views

8.semicondutor Devices

1. A PN junction is formed when a P-type semiconductor is joined to an N-type semiconductor, forming a diode. 2. When the P and N regions are joined, majority carriers diffuse across the junction but are halted by an electric field, forming a depletion region. 3. A diode allows current to flow easily in one direction, blocking it in the reverse direction. This property makes diodes useful for rectification of AC to DC voltages.

Uploaded by

Sadia Husna
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPT, PDF, TXT or read online on Scribd
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Semi conductor devices

Formation of pn-junction:

• When a p-type semiconductor is joined


together with an n-type semiconductor a p-n
junction is formed. And it is also known as a
semiconductor diode.

• Semiconductor diodes are widely used in


rectifiers which convert input ac voltages to
dc voltage.
Formation of p-n junction

Potential barrier
V

P-region N-region

+
+
+

Acceptor ions Donor ions

Depletion Layer
Depletion region:

• The diffusing majority carriers from the


two regions recombine near the junction
and disappear.
• The uncompensated acceptor and donor
ions set up an electric field which halts
majority carrier diffusion and causes
minority carrier drift.
Space charge:

• The two kinds of majority carriers diffusing


across the junction meet each other near the
junction and undergo recombination's, leaving
negative ions on the p-side and positive ions
on the n-side of the junction.

• This distribution of charges is called space


charge.
Diode symbol

N P

Cathode Anode

_
+
Energy band structure of PN-junction

P - type N - type

Conduction band Conduction band

E E
Ec Ec EC
EC
EFP

EFP

Ev Ev

Valence band Valence band


JUNCTION

Conduction band

E
Ec Ec
EFn
EFP

Valence band
Depletion region
E
PN - junction

eVB Conduction band

EFp EFn
Fermi level

Valence band

eVB

P N
V - I characteristics of PN junction:
1. zero bias

ECP

eVB

EFP ECP

EVP EFn

eVB

EVn
2. Forward bias

Potential barrier
V

P-region N-region
+
+
+
+

Acceptor ions Donor ions

Depletion Layer
ECP

e( VB- VF)

ECP

EFn

EFP
EVP
e (VB – VF)

EVn
3. Reverse bias
Potential barrier
V

P-region N-region
+
+
+
+

Acceptor ions Donor ions

Depletion Layer
ECP

e( VB-+Vr)

ECP
EFP

EFn
EVP
e (VB + Vr)

EVn
I
current

Reverse bias
V

Forward bias

Zener voltage

Leakage current
Diffusion of majority carriers:

When the two p & N type blocks are joined ,

Electrons tend to diffuse from n-type region into p-type


region while holes tend to diffuse from p-type to n-type
region.

Holes give rise to hole diffusion current density


component Jhp. And Electrons cause electron diffusion
current density component Jen.

The net diffusion current density J = Jhp + Jen


Drift of minority carriers:

Electric field across the junction prevents the


diffusion of majority carriers.

Electrons arriving at the junction from p-region


by electric field to move into n-region.
similarly, holes in the n-region are to move
into p-region causes the current flow across
the junction and the current is called drift
current.

The net drift current Jdrift= Jep + Jhn


Rectifier
• A rectifier is a device which converts
alternating current to direct or unidirectional
current.
• Rectifiers are mainly three types…

1.Half wave rectifiers


2.Full wave rectifiers
3.Bridge rectifiers
Half – wave Rectifier :
A

transformaer

A.C input D .C output

B
Full wave rectifier

Center tapped
transformer
A

A.C input
B

D .C output
Efficiency of a rectifier :

The efficiency of a rectifier is defined as the ratio of


d.c. out put power P (d.c) to the a.c. input power P (a.c)
supplied to the rectifier.

op (d .c) power
efficieny 
ip (a.c) power
Light emitting diodes:

• LED’ s are the most visible type of diode, that


emits a fairly visible colored light, invisible infra-
red or laser type light when a forward current is
passed through them.

Principle:

Basically LED are made from a very thin layer of


fairly heavily doped semiconductor material.
When the diode is forward biased, electrons from
conduction band combine with holes from in
valence band, releasing sufficient energy to
produce photons of light.
Semicondu
Wave
ctor Color Vf @ 20mA
length
material
GaAs 850-940nm Infra-Red 1.2V
GaAsP 630-660nm Red 1.8v
GaAsP 605-620nm Amber 2.0v
GaAsP:N 585-595nm yellow 2.2v
GaP 550-570nm Green 3.5v
SiC 430-505nm Blue 3.6v
GAInN 450nm white 4.0v
Anode Cathode
+
_

Cathode
Current
I(MA)

V
Photo diode

• A photodiode is a diode optimized to produce an


electron current flow in response to irradiation by
ultraviolet, visible, or infrared light.

• Silicon, Ge & gallium arsenide is most often used to


fabricate photodiodes.

• Few electron-hole pairs in the N and P–regions, and


most in the depletion region contribute to photo
current.
Photo diode
Sun radiation
Top metal contact

+
P-diffusion

Depletion region

N-type

N+ contact region

Bottom metal contact


Photo diode Symbol

P Depletion region N N+

Heavily doped & very thin Lightly doped

Anode Cathode
+
_

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