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Spintronics

University College Of Engineering, Rajasthan Technical University, Kota presented on Spintronics Technology. Spintronics uses electron spins in addition to or instead of electron charge for information manipulation, storage, and transfer. This overcomes limitations of Moore's Law as spin can represent 1s and 0s with two states - spin up and spin down. Devices like giant magnetoresistance (GMR) spin valves and tunnel magnetoresistance take advantage of electron spin to function. Magnetoresistive random access memory (MRAM) uses magnetic tunnel junctions for non-volatile memory storage and promises density of DRAM with speed of SRAM. Research continues to improve spintronics devices for practical applications.

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538 views13 pages

Spintronics

University College Of Engineering, Rajasthan Technical University, Kota presented on Spintronics Technology. Spintronics uses electron spins in addition to or instead of electron charge for information manipulation, storage, and transfer. This overcomes limitations of Moore's Law as spin can represent 1s and 0s with two states - spin up and spin down. Devices like giant magnetoresistance (GMR) spin valves and tunnel magnetoresistance take advantage of electron spin to function. Magnetoresistive random access memory (MRAM) uses magnetic tunnel junctions for non-volatile memory storage and promises density of DRAM with speed of SRAM. Research continues to improve spintronics devices for practical applications.

Uploaded by

shailendra
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© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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University College Of Engineering,

Rajasthan Technical University, Kota.

Presentation
On
Spintronics Technology

Submitted To: Presented By :


Dr R S Meena Shailendra Kumar Singh Mr Pankaj Shukla
C.R. No : 07/126 Final B.
Tech. (ECE)
What Is Spintronics ?
• In conventional electronics,
electron charge is used for
manipulation, storage, and
transfer of information .

• Spintronics uses electron


spins in addition to or in
place of the electron
charge.
Why We Need Spintronics !

Failure of Moore’s Law :


 Moore’s Law states that the number of transistors on a
silicon chip will roughly double every eighteen months.
 But now the transistors & other components have reached
nanoscale dimensions and further reducing
the size would lead to:
1. Scorching heat making making the circuit inoperable.
2. Also Quantum effects come into play at nanoscale
dimensions.
 So the size of transistors & other components cannot be
reduced further.
Basic Principle
 In Spintronics , information is carried by orientation of
spin rather than charge.
 Spin can assume one of the two states relative to the magnetic
field, called spin up or spin down.
 These states, spin up or spin down, can be used to represent
‘1’ and ‘0’ in binary logic.
 In certain spintronic materials, spin orientation can be used
as spintronic memory as these orientation do not change
when system is switched off.
Advantage Spintronics

 Low power consumption.

 Less heat dissipation.

 Spintronic memory is non-volatile.

 Takes up lesser space on chip, thus more compact.

 Spin manipulation is faster , so greater read & write speed.

 Spintronics does not require unique and specialized semiconductors.


Common metals such as Fe, Al, Ag , etc. can be used.
Gaint Magnetoresistance (GMR)
 The basic GMR device consists of a layer of non -magnetic metal between two
two magnetic layers.
 A current consisting of spin-up and spin-down electrons is passed through
the layers.
 Those oriented in the same direction as the electron spins in a magnetic layer
pass
through quite easily while those oriented in the opposite direction are scattered.
SPIN VALVES
 If the orientation of one of the magnetic layers be changed then
the device will act as a filter, or ‘spin valve’, letting through more
electrons when the spin orientations in the two layers are the same
and fewer when orientations are oppositely aligned.
 The electrical resistance of the device can therefore be changed
dramatically.
Tunnel Magnetoresistance
 Magnetic tunnel junction has two
magnetic layers separated by an insulating

metal-oxide layer.
 Is similar to a GMR spin valve except that
a very thin insulator layer is sandwitched
between magnetic layers instead of metal
layer .
 The difference in resistance between the
spin-aligned and nonaligned cases is much

greater than for GMR device – infact 1000


times higher than the standard spin valve.
Magnetoresistive Random Access Memory (MRAM)

 MRAM uses magnetic storage elements.


The elements are mostly tunnel junctions formed from two
ferromagnetic plates, each of which can hold a magnetic field,
separated by a thin insulating layer.
SRAM VS DRAM VS MRAM
Advantage Disadvantage
SRAM • Fast read & write • Volatile
• Low density
speed.
• Low power
DRAM • Volatile
• High density • High power
• Fast read &write

speed. •
MRAM None ??
• Fast read &write

speed.
• Low power
Comparison with DRAM & SRAM
 In DRAM & SRAM, a bit is represented as charge stored in
capacitor.
 In MRAM, data is stored as magnetic alignment of electrons in
a ferromagnetic material. Spin up represents ‘0’ and spin down
represents ‘1’.
 MRAM promises:
• Density of DRAM
• Speed of SRAM
• Non-volatility like flash memory.
 That’s why its called universal memory.
256 K MRAM
Journey of MRAM
 Problems encountered:
1. The density of bits was low.
2. Cost of chips was high.
 Improved designs to overcome these problems would work
only at liquid nitrogen temperature.
 An important breakthrough was made in the year 2009.
 Scientists at the North Carolina State University discovered
a semiconductor material ‘ Galium manganese nitride’ that
can store & retain spin orientation at room temperature.
 And research is still going on…
Thanks for your attention…!!!

Any Queries ??

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