Power Electronics

Lecture(8)
Prof. Mohammed Zeki Khedher
Department of Electrical Engineering
University of Jordan

1
 Thyristors

 Most important type of power

semiconductor device.
 Have the highest power handling
capability.they have a rating of 5000V /
6000A with switching frequencies ranging
from 1KHz to 20KHz.

2
 Is inherently a slow switching device
compared to BJT or MOSFET.
 Used as a latching switch that can be
turned on by the control terminal but
cannot be turned off by the gate.

3
 SCR

Symbol of
Silicon Controlled Rectifier

4
 Structure
G a te C a tho d e

n
+
10
19
cm
-3
n
+
10
19
cm
-3
 1 0 m


J3 - 17 -3
p 10 cm 3 0 -1 00 m


J2
–
n 10
13
-5 x 1 0
14
cm
-3 5 0 -1 00 0 m

J1
p
+
10
17
cm
-3
 3 0 -5 0 m
19 -3
p 10 cm

A no d e

5
Device Operation

Simplified model of a
thyristor

6
Two Transistor Model of SCR


7
8
The general transistor equations are,
I C   I B  1    I CBO
I C   I E  I CBO
I E  IC  I B
I B  I E 1     I CBO

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Considering PNP transistor
of the equivalent circuit,
I E 1  I A , I C  I C1 ,   1 ,
I CBO  I CBO1 , I B  I B1
 I B1  I A 1  1   I CBO1    1
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Considering NPN transistor
of the equivalent circuit,
I C  I C2 , I B  I B2 , I E2  I K  I A  I G
I C2   2 I k  I CBO2
I C2   2  I A  I G   I CBO2     2 
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From the equivalent circuit,
we see that
 I C2  I B1
 2 I g  I CBO1  I CBO 2
 IA 
1  1   2 
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Case 1: When I g  0
I CBO1  I CBO2
IA 
1  1   2 
Case 2: When I G  0
 2 I g  I CBO1  I CBO 2
IA 
1  1   2 
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 V-I
Characteristics
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Effects of gate current

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 Turn-on
Characteristics

ton  td  tr
16
 VAK
tC
tq

IA
di
C om m u ta tio n
A n od e cu rr e n t dt
b e gin s to
d e cr e a se R e co ve r y R e com bin a tio n

t1 t2 t3 t4 t5

t q = d e vice o ff tim e
Turn-off
t

Characteristic
tr r tg r
t c = circu it o ff tim e
tq

s
tc

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 dq2 d
ij 2 
dt

dt
C j Vj
2 2

C j2 dV j dC j2
 2
 V j2
dt dt
dv/dt
Triggering
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 dq2 d
ij 2 
dt

dt
C j Vj
2 2

C j2 dV j2 dC j2
  V j2
dt dt
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 Switching Characteristics (linearized)

Switching Power Loss is

proportional to:
• switching frequency
• turn-on and turn-off
times
 Methods of Thyristor Turn-on

 Thermal Turn-on.
 Light.
 High Voltage.
 Gate Current.
 dv/dt.

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 Thyristor Ratings
First Second Third
Subscript Subscript Subscript
D  off state W  working M  Peak
Value
T  ON state R  Repetitive

F  Forward S Surge or
non-repetitive
R  Reverse
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 Voltage Ratings

VDWM VDRM VDSM

VRWM VRRM VRSM
dv
VT
dt
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 Current Ratings

ITaverage ITRMS IL
di
IH
dt
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 Gate Specification

I gt Vgt
VgD QRR
Rthjc
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 Diodes
 Diode Product Range
Phase Control Thyristors
Fast switching Thyristors
 Thyristor Types
 Phase-control Thyristors (SCR’s).
 Fast-switching Thyristors (SCR’s).
 Gate-turn-off Thyristors (GTOs).
 Bidirectional triode Thyristors (TRIACs).
 Reverse-conducting Thyristors (RCTs).

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 Static induction Thyristors (SITHs).
 Light-activated silicon-controlled rectifiers
(LASCRs).
 FET controlled Thyristors (FET-CTHs).
 MOS controlled Thyristors (MCTs).

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 PHASE-CONTROL THYRISTORS : primarily for rectifying line
frequency voltage and currents (phase controlled AC and DC
motor drivers and high voltage power transmission). Average
current 4000A, blocking voltage 5-7kV and on-state voltage
1.5-3V

 INVERTER-GRADE THYRISTORS: small turn-off times (from a

few µs to100µs depends on their blocking voltage and on-
state voltage drops), and small on-state voltage,
2500V-1500A.

 LIGHT-ACTIVATED THYRISTORS: triggered by a pulse of light

guided by optical fibers to a sensitive region, used primarily in
high voltage application such as high voltage power
transmission 4kV-3kA
 Devices
 SITH = Static Induction Thyristor
 GTO = Gate Turn Off Thyristor
 MOS = Metal Oxide Semiconductor
 MCT = MOS Controlled Thyristor
 MTO = MOS Turn Off Thyristor
 ETO = Emitter Turn Off Thyristor
 IGCT = Insulated Gate Controlled Thyristor
 TRIAC = Triode Thyristor
 LASCR = Light Activated SCR
 Devices..
 NPN BJT = NPN Bipolar Junction Transistor
 IGBT = Insulated Gate Bipolar Junction
Transistor
 N-Channel MOSFET = N-Channel Metal
Oxide Silicon Field Effect Transistor
 SIT = Static Induction Transistor
 RCT = Reverse Conducting Thyristor
 GATT = Gate Assisted Turn Off Thyristor
Power Semiconductor Devices,
their Symbols & Characteristics

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 DEVICE SYMBOLS &
CHARACTERISTICS

35
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
36
37
 Phase Control Thyristor
 These are converter thyristors.
 The turn-off time tq is in the order of 50 to
100sec.
 Used for low switching frequency.
 Commutation is natural commutation
 On state voltage drop is 1.15V for a 600V
device.
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 They use amplifying gate thyristor.

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Fast Switching Thyristors
 Also called inverter thyristors.
 Used for high speed switching applications.
 Turn-off time tq in the range of 5 to 50sec.
 On-state voltage drop of typically 1.7V for
2200A, 1800V thyristor.
 High dv/dt and high di/dt rating.

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Bidirectional Triode
Thyristors (TRIAC)

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Triac Characteristics

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 Gate Turn-off Thyristors
 Turned on by applying positive gate signal.
 Turned off by applying negative gate signal.
 On state voltage is 3.4V for 550A, 1200V GTO.
 Controllable peak on-state current ITGQ is the
peak value of on-state current which can be
turned-off by gate control.

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 Gate-Turn-Off Thyristors (GTO)

• Slow switching speeds

• Used at very high power levels
• Require elaborate gate control circuitry
 GTO Turn-Off

• Need a turn-off snubber

 Advantages over SCRs

 Elimination of commutating components.

 Reduction in acoustic & electromagnetic
noise due to elimination of chokes.
 Faster turn-off, therefore can be used for
higher switching frequencies.
 Improved efficiency of converters.

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 Advantages over BJTs

 Higher voltage blocking capabilities.

 High on-state gain.
 High ratio of peak surge current to
average current.
 A pulsed gate signal of short duration only
is required.

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 Disadvantages of GTOs

 On-state voltage drop is more.

 Due to multi cathode structure higher gate
current is required.
 Gate drive circuit losses are more.
 Reverse blocking capability is less than its
forward blocking capability.

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Reverse Conducting
Thyristors

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 Anti-parallel diode connected across SCR
on the same silicon chip.
 This diode clamps the reverse blocking
voltage to 1 or 2V.
 RCT also called Asymmetrical Thyristor
(ASCR).
 Limited applications.
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 Static Induction Thyristors
 Turned-on by applying positive gate voltage.
 Turned-off by applying negative gate voltage.
 Minority carrier device.
 Low on-state resistance & low voltage drop.
 Fast switching speeds & high dv/dt & high
di/dt capabilities.

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 Switching time in order of 1 to 6 sec.
 The rating can go upto 2500V / 500A.
 Process sensitive.

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 Light-Activated Silicon
Controlled Rectifiers
 Turned-on by direct light radiation on
silicon wafer.
 Gate structure is sensitive for triggering
from practical light sources.
 Used in high voltage and high current
applications. Example: HVDC transmission,
Static reactive power compensation.

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 Offers complete electrical isolation
between light triggering source & power
circuit.
 Rating could be has high as 4KV / 1500A.
 di/dt rating is 250A / sec.
 dv/dt rating is 2000V / sec.

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Photo-SCR coupled isolator
Bipolar Junction Transistors (BJT)

• Used commonly in the past

• Now used in specific applications
• Replaced by MOSFETs and IGBTs
 FET Controlled
Thyristors
 Combines a
MOSFET & a
thyristor in parallel
as shown.
 High switching
speeds & high di/dt
& dv/dt.

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 Turned on like conventional thyristors.
 Cannot be turned off by gate control.
 Application of these are where optical
firing is to be used.

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 MOS-Controlled
Thyristor
 New device that has become commercially
available.
 Basically a thyristor with two MOSFETs
built in the gate structure.
 One MOSFET for turning ON the MCT and
the other to turn OFF the MCT.

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MCT
 Features
 Low on-state losses & large current
capabilities.
 Low switching losses.
 High switching speeds achieved due to
fast turn-on & turn-off.
 Low reverse blocking capability.

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 Gate controlled possible if current is less
than peak controllable current.
 Gate pulse width not critical for smaller
device currents.
 Gate pulse width critical for turn-off for
larger currents.

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 MOSFET

66
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
 MOSFETs

• Easy to control by the gate

• Optimal for low-voltage operation at high switching frequencies
• On-state resistance a concern at higher voltage ratings
IGBT
 IGBT

77
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
 Advantages of IGBT
 Combines the advantages of BJT & MOSFET
 High input impedance like MOSFET
 Voltage controlled device like MOSFET
 Simple gate drive, Lower switching loss
 Low on state conduction power loss like BJT
 Higher current capability & higher switching
speed than a BJT. ( Switching speed lower than
MOSFET)
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Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
 Applications of IGBT
 ac and dc motor controls.
 General purpose inverters.
 Uninterrupted Power Supply (UPS).
 Welding Equipments.
 Numerical control, Cutting tools.
 Robotics & Induction heating.

79
Prof. M. Madhusudhan Rao, E&C Dept., MSRIT
MCT
Comparison of Controllable Switches
Summary of Device Capabilities