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Bab 4

The document discusses design for reliability in electronic systems. It describes two key approaches: 1) design for reliability which involves predicting and designing for potential failure mechanisms before building, and 2) reliability testing which conducts accelerated testing on completed systems. Several common failure mechanisms are also outlined, including thermo-mechanical failures due to thermal stresses, electrical failures from electrostatic discharge or electromigration, and chemical failures from corrosion or material diffusion.

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15 views

Bab 4

The document discusses design for reliability in electronic systems. It describes two key approaches: 1) design for reliability which involves predicting and designing for potential failure mechanisms before building, and 2) reliability testing which conducts accelerated testing on completed systems. Several common failure mechanisms are also outlined, including thermo-mechanical failures due to thermal stresses, electrical failures from electrostatic discharge or electromigration, and chemical failures from corrosion or material diffusion.

Uploaded by

ezad2206
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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DESIGN FOR

RELIABILITY

By Norhaida Binti Mustafa


LEARNING OUTCOMES

 1.
Describe fundamental and
requirement of design for reliability

 2. Identify the main causes of reliability


failures and express all the failures.
INTRODUCTION
Electronic Product:
Performance
Cost
Size
Reliability

Electrical:
Manufacturing:
Performance • Reliability
Size Cost
INTRODUCTION

What is RELIABILITY??

 Reliability is defined as the probability that a


system will function within acceptable
limits for a given period of time

 What are 2 approaches need to follow in order


to make sure electronic system will be reliable
over an extended period of time????
2 APPROACHES --

1. Design for reliable


 Predetermine various potential failure
mechanisms
 To create designs
 Select materials
 Determine the process

When???before the packages are built.


2 APPROACHES --

Reliability Testing
 Process that conducts an accelerated test on the
systems packaging for reliability.
 accelerated test conditions in term of:
i. Test conditions
ii. Thermal cycling
iii. Temperature and humidity cycling
iv. Power cycling for short periods of time - by applying higher temperature,
higher humidity, higher voltage, higher pressure and more to accelerate the
failures process

When???After a system is built and assembled


FAILURE MECHANISM

 Overstress mechanisms – stress exceeds the


strength or capacity of the component and
causes the system failure. (single event)

 Wearout mechanisms - gradual and occurs


even at lower stress level. (repeated event)
FAILURE MECHANISM
FAILURE MECHANISM

 Important way to avoid or reduce the stresses


that cause the failure
1) Selecting alternate and better materials
2) Changing the package geometry and
dimensions.
3) Introducing new protection or encapsulation
4) Combination of these methods
Failure

 Mechanical
 Electrical
 Chemical
THERMO-MECHANICALLY
INDUCED FAILURE

 Result from stresses and strain generated


within electronic package by external or
internal heating thermal loading of the
system due to:
1. Mismatch of the thermal coefficient of expansion
(CTE) of the different materials
2- Thermal gradients in the system
3. Geometric constraints
THERMO-MECHANICALLY
INDUCED FAILURE

An illustration of thermo mechanical deformation in solder joints.


THERMO-MECHANICALLY
INDUCED FAILURE
 Failure
1) Fatigue Crack
2) Brittle Fracture
3) Creep
4) Delamination
5) Plastic Deformation
ustrates the shear strain point, wherein the max strain is at the outside-edge solder ball where the distance from neutral points (DNP) is at maximum

FATIGUE CRACK

 The failure mechanism is known to occur in


metals, polymers and ceramics

Maximum stress at the edge


due to a large DNP (distance
from the neutral point)

illustrates the shear strain point,


wherein the max strain is at the
outside-edge solder ball where the
distance from neutral points (DNP)
is at maximum.
BRITTLE FRACTURE

 An overstress failure mechanism fracture that


occurs rapidly with little or no warning when
the induced stress exceeds the fracture
strength of the material.
 It can occur in brittle materials such as
ceramics, glasses and silicon with little
accompanying plastic deformation and
comparatively little energy absorption.
CREEP

 Creep is a time-dependent deformation process


under load.
 Tendency of solid material to slowly move and
deform permanently under the influence of
stresses
 Creep can occur at any stress level, below or
above the yield stress.
 Deformation occur depend on:
1) Applied load
2) Temperature
3) Duration
DELAMINATION

 Delamination is the debonding or the separation


adjacent material layers which were bonded before
 Can occurs in interior of the package or an edge
delamination where the delamination occurs at a
free edge (free-edge delamination).

Edge delaminations in a flip chip assembly with underfill


DELAMINATION

 Delamination may be present in packages due to


various processing issues, like:
1) Inadequate surface preparation
2) Inadequate cleaning and presence of contaminants
3) Inadequate baking
4) Moisture and volatiles
5) Inadequate material dispensing
6) Non-planarity and topological variations in the
surfaces
7) High interfacial stresses
PLASTIC DEFORMATION
 Mechanical stress exceeds the elastic limit or
yield point of a material.
 Permanent where when the load is removed,
the plastic deformation remains in the material.
 It is not affect the electrical function of the
device, but the excessive plastic deformation
and continued accumulation of plastic strain
due to cyclic loading will in time lead to
cracking of the component and make it
unusable.
ELECTRICAL INDUCED FAILURE
 Electrostatic discharge (ESD): Electrostatic
discharge (ESD) is the transfer of charge between
two bodies at different potentials by direct contact
or induced by an electrostatic (electromagnetic)
field.
 Gate Oxide breakdown: An electrical short
between the gate metallization and the channel of
a MOSFET destroys the operation of the device
and is called gate oxide breakdown.
 Electromigration: Electromigration is an atom flux
induced in metal traces by high current densities.-
phenomena appears when current flows continuously thru metal wiring under certain
condition & directly affects the wiring life
CHEMICALLY INDUCED FAILURE
 Electrochemical reactions (corrosion): can cause
gradual depletion of metal in the presence of an
electrolyte.
 Diffusion of materials: common failure mechanism
in electronic interconnections like wirebonds and
solder joints. During wirebonding an solder reflow,
the joining process generates intermetallic layers
which are by-products of the joining process.
 Dendritic growth -A crystal dendrite is a crystal that develops with
a typical multi-branching tree-like form. Dendritic crystal growth is very
common and illustrated by snowflake formation and frost patterns on a
window. Dendritic crystallization forms a natural fractal pattern.

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