Lecture 10 - Recovery Recrystallication and Grain Growth
Lecture 10 - Recovery Recrystallication and Grain Growth
Lecture 8
Recovery, Recrystallization and Grain Growth
High T Recrystallization
RECOVERY
Recovery takes place at low temperatures of annealing (after cold work).
“Apparently there no change in microstructure” (i.e. if seen in an optical
microscope, the microstructure looks similar before and after recovery).
Two processes which occur during recovery are:
Reduction in point defect density (+ their reconfiguration),
Annihilation of dislocations and their arrangement into low energy
configurations.
Note: not all point defects and dislocaitons participate in the above
processes.
It was noted that excess point defects are created during cold work. During
recovery these are absorbed by processes which include (there are other
processes which also may be active):
► at surface or grain boundaries
► or by dislocation climb process.
RECOVERY
During recovery, random dislocations (statistically stored dislocations) of
opposite sign come together and annihilate each other. However, the
overall reduction in the dislocation density by this process is small.
Figure 1:(a) The particles located within a distance of the grain boundary plane
can interact with the boundary.
(b) The forces at the junction between the boundary and the particle. Think of the
particle as a sphere which is intersecting a planar surface. The perimeter defining
the intersection is 2ϖr.cos (θ)
ZENER PINNING
Recrystallisation and grain growth involve the movement of grain boundaries. The motion will be
inhibited by second phase particles. The drag on the boundary due to an array of insoluble, incoherent
spherical particles is because the grain boundary area decreases when a boundary intersects the
particle. Therefore, to move away from the particle requires the creation of new surface. The net drag
force on a boundary of energy per unit area due to a particle of radius is given by (Fig. 1), Since r.
sin(θ) = force per unit length
Force = γ. sin(θ) . 2ϖr.cos (θ)
Fmax = γϖr at θ = 450
Suppose now that there is a random array of particles, volume fraction, f with N particles per unit
volume. Note that N = f / (4/3 ϖr3)
Only those particles within a distance ± can intersect a plane. The number of particles intersected by
a plane of area 1 m2 will therefore be n= 2rN = 3f/2ϖr2
The drag pressure is then often expressed as P= Fmax. n = 3γf/2r
This may be a significant pressure if the particles are fine. Anisotropic particles may have a larger
effect if they present a greater surface area for interaction with the boundary.
A grain of radius r has a volume 4/3ϖr3 and surface area 4ϖr2 . The grain boundary energy
associated with this grain is 4ϖr2 γ where is the boundary energy per unit area and we have taken
into account that the grain boundary is shared between two grains. If follows that:
Energy per unit volume = 3γ/2r = 3γ/D, where D is the grain diameter.
It is this which drives the growth of grains with an equivalent pressure of about 0.1 MPa for typical
values of γ =0.3 J/m2 and D= 10 μm. This is not very large so the grains can readily be pinned by
particles (Zener drag).
ZENER PINNING
In order to move past the particle some new boundary
must be created, and this is energetically
unfavourable. While the region of boundary near the
particle is pinned, the rest of the boundary continues
trying to move forward under its own driving force.
This results in the boundary becoming bowed
between those points where it is anchored to the
particles.
total force acting on the particle-boundary interface is
The maximum restraining force occurs when θ = 45° and so Fmax = πrγ .
Given the assumption that all particles apply the maximum pinning force, Fmax, the total
pinning pressure exerted by the particle distribution per unit area of the boundary is
Hot Work and Cold Work Hot Work Plastic deformation above TRecrystallization
Cold Work Plastic deformation below TRecrystallization
Often the range is further subdivided into Hot, Cold and Warm working as in the figure
Hot Work
Tm
0.1 involve mainly motion of point defects.
Tm Upper limit 0.3 Tm.
Grain growth
Grain growth
The growth of larger grains at the expense of smaller ones, leading to the increase in the average
grain size is termed as grain growth. (Obviously all the grains cannot grow!).
This is also called ‘grain coarsening’.
A related term to this is ‘Ostwald ripening’. Similar processes is observed in the case of
precipitation, wherein larger precipitates grow at the expense of smaller ones, leading to an overall
increase in the size of the precipitates (called precipitate coarsening).
For grain growth to occur, both the global and the local criteria must be satisfied.
The global criterion is easy to understand. Grain growth is Globally driven by reduction in grain
boundary energy (per unit volume).
The local condition is explained in the next page. If we make ‘hexagonal grains’ as in the figure
below, the system will not coarsen.
Grain growth will lead to a further drop in the strength of the material (i.e. after recrystallization has led to a
considerable drop). The strength of a material depends on the grain size via the Hall-Petch relation
(wherein larger grains imply a lower strength).
JUMP
Bonded to
4 atoms
G1 G2
Due to cold work changes occur to almost all physical and mechanical properties.
The cold worked material is stronger (harder), but is brittle (as noted before).
The electrical resistance of the material increases due to primarily the increase in point
defect density. (This is mostly reversed during recovery).
Changes can also be noted in the X-Ray diffraction pattern.
► Laue patterns of single crystals show pronounced asterism → due to lattice curvatures.
► Debye-Scherrer photographs show line broadening → Residual stresses + deformations.
↑ Strength ↑ Hardness
Cold work
↑ Electrical resistance
↓ Ductility
Internal stress
Electical conductivity
Tensile strength
Ductility
Cold work Recovery Recrystallization Grain growth
STRUCTURAL CHANGES
MICROSTRUCTURAL CHANGES