UNIVERSITY INSTITUTE OF

ENGINEERING

Bachelor of Engineering (Aerospace Engineering)

DISCOVER . LEARN .
EMPOWER
 Material Science

22AST-216
Academic Session : JUL- DEC 2023
Semester : III
Mr. UMA SHANKER
Faculty of Aerospace Department,
Chandigarh University
[email protected]
 Primary Goals

This undergraduate level course of Material Science identify the types of

materials used.
The primary goal of this course is to learn about the fundamentals of
material behavior of various aerospace vehicles.

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 COURSE PRE-REQUISITES

Students are expected to have a basic understanding of metallurgic

properties under ideal as well in real conditions

Additionally, students must have taken a course of Physics,

Aerothermodynamics and Chemistry which involves the conceptual and
mathematical analysis etc.

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 COURSE OBJECTIVE

This course will give an opportunity to gain scientific understanding

regarding the choice and manipulation of materials for desired
engineering application

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 Lect-22-B
SYLLABUS
UNIT-2
3. Electronic Materials: Fermi energy and Fermi–Dirac distribution
function –Variation of Fermi level with temperature in intrinsic and
extrinsic semiconductors – Hall Effect – Dilute Magnetic
Semiconductors (DMS) and their applications.

4.Photonic Materials: LED – LCD – Photo conducting materials –

Photo detectors– Photonic crystals and applications – Elementary ideas
of Non-linear optical materials and their applications.

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Ques-1 To high-purity silicon is added 1023 m-3 arsenic atoms.
(a) Demonstrate whether it is n-type or p-type
(b) Calculate the room-temperature electrical conductivity of this material.
(c) Determine the conductivity at 100°C (373 K)

Solution-
(a)Arsenic is a group VA element and therefore acts as a donor in silicon and it
means that this material is n-type. (Ans)
(b)At room temperature (298K) i.e. the extrinsic temperature region which
shows all of the arsenic atoms have donated electrons (n=10^23 m^-3). Since
this material is extrinsic n-type thus it is necessary to determine the electron
mobility for a donor concentration of 10^23 m^-3.
At 10^23 m^-3, μe =0.07 m^2/V-s
σ = n |e| μe = (10^23) x (1.6x10^-19) x (0.07) = 1120 (Ω-m)^-1 (Ans)
 Conti…
( c) To solve for the conductivity of this material at 373 K and electron mobility at
this temperature.
For 10^23 m^-3 at 373K, μe= 0.04 m^2/V-s
Therefore,
Electrical Conductivity,
σ = n |e| μe = (10^23) x (1.6x10^-19) x (0.04) = 640 (Ω-m)^-1 (Ans)

Ques-2 An extrinsic p-type silicon material is desired having a room temperature

conductivity of 50 (Ω-m)^-1. Specify an acceptor impurity types that may be used, as
well as its concentration in atom percent, to yield these electrical characteristics.

Solu- As an element when added to silicon then it p-type lie one group to the left of
silicon in the periodic table and it includes the group IIIA elements i.e. Boron,
Aluminum, Gallium and Indium.
Since this material is extrinsic and p-type (p >> n), therefore the electrical
conductivity is a function of both hole concentration and hole mobility.
Conti…

It is also assumed that at room temperature, all the acceptor dopant atoms have
accepted electrons to form holes (extrinsic region) i.e. the number of holes is
approximately equal to the number of acceptor impurities Na.
μh is dependent on impurity content. This problem has been solved
through trail and error.
Assume an impurity concentration, then compute the conductivity using
this value and corresponding hole mobility. Then on the basis of this result,
repeat the process, assuming another impurity concentration.

Let-
Na=10^22 m^-3 (a p value) and this concentration, the hole mobility = 0.04
m^2/V-s
Therefore, the conductivity,
σ = p |e| μh = (10^22) x (1.6x10^-19) x (0.04) = 64 (Ω-m)^-1 (Ans)
Conti…
On decreasing the impurity content an order of magnitude to 10^21 m^-3 results in
only slight increase of μh = 0.045 m^2/V-s.
Thus the resulting conductivity,
σ = p |e| μh = (10^21) x (1.6x10^-19) x (0.045) = 7.2 (Ω-m)^-1 (Ans)
A conductivity of 50 (Ω-m)^-1 is achieved when Na = p = 8x10^21 m^-3
And at this Na value, μh remains approximately 0.04 m^2/V-s

The number of silicon atoms per cubic meter, Nsi

 Other Electrical Characteristics of Materials

• FERROELECTRICITY
• PIEZOELECTRICITY

Note- Go through Chapter-18 Electrical Properties

(Materials Science and Engineering)
(WILLIAM D. CALLISTER, JR.)
TEXT BOOKS:

1. Palanisamy P.K., Physics II, Material Science for ECE, Scitech Publications (India) Pvt Ltd., 2006.

2. Safa O. Kasap, Principles of Electronic materials and devices, McGraw Hill Publishers, 3rd Edition,
2006.

3.W F Smith, Materials Science and Engineering,

REFERENCES:

1. Arumugam.M, Physics II, Material Science for ECE, Anuradha Publishers, 5th Edition, 2005.

2. Jacob Millman, Christos C.Halkais, Electronic Devices and Circuits, Tata McGraw-Hill, New Delhi,
1991.

3. Charles Kittel, Introduction to solid state physics, 7th Edition, John Wiley & sons (ASIA) Pvt. Ltd.

1. Sze. S.M., Semiconductor Devices – Physics and Technology, 2nd edn. John Wiley, 2002.