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FlashMemory w2021

Flash memory uses floating gate MOSFETs arranged in arrays to provide non-volatile storage. A floating gate MOSFET traps electrons on an insulated gate to store data. During reads, the threshold voltage is measured to determine the stored value. NAND and NOR configurations organize arrays for different access patterns. Electrons are injected or removed from the floating gate using Fowler-Nordheim tunneling or hot carrier injection for writing and erasing. This allows modern flash memory devices like SD cards and microcontroller flash.

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Gregori Moises Cruz Santana
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16 views

FlashMemory w2021

Flash memory uses floating gate MOSFETs arranged in arrays to provide non-volatile storage. A floating gate MOSFET traps electrons on an insulated gate to store data. During reads, the threshold voltage is measured to determine the stored value. NAND and NOR configurations organize arrays for different access patterns. Electrons are injected or removed from the floating gate using Fowler-Nordheim tunneling or hot carrier injection for writing and erasing. This allows modern flash memory devices like SD cards and microcontroller flash.

Uploaded by

Gregori Moises Cruz Santana
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Flash Memory

…and a tour through FETs


Conceptual Roadmap

PN junction
Put n-channels in p-substrate:
drain (D), Source (S), Gate(G)

MOSFET
Add a floating gate

Flash Cell Put a bunch together in NAND


or NOR configuration

Flash
Blocks Out pops an SD card
or MCU flash memory!

Modern
Devices
Metal Oxide Insulator:
Feel the Force

n-Channel Enhancement Mode MOSFET


Image credit: https://courses.engr.illinois.edu/ece110/sp2019/content/courseNotes/files/?MOSFETs#FET-NSM
Actual MOSFET Devices
Single MOSFET on Intel chip Enhancement MOSFET
Nanofab Lab
Intel 300 mm wafer, 45 nm
technology (Intel 2006)

154 Mbit SRAM cell (top)


Six transistor SRAM cell (bottom)
MOSFET Operational Curve

𝟐
𝑰 𝑫 =𝒌(𝑽 𝑮𝑺 −𝑽 𝑻 𝑯 )
Changing this the key to Flash memory!
Quantum Leap:
Hot Carrier Injection Fowler-Nordheim Tunneling

If gate (G) is positive, electron is pulled upwards

http://www.onmyphd.com/?p=mosfet.short.channel.effects Microchip Technology Tutorials


Floating Gate MOSFET = Flash

+++++ Assume:
VDS =VD - VS =+7V

What happens if?:


VGS =VG – VS= +10 V

Then what happens?:


to ‘stored’ electrons
if VGS is set to 0V?
Reading Memory State

Screening Effect of Floating Gate changes threshold votlage


Read mode: Apply intermediate voltage, check whether current is flowing or not
Reading: NOR and NAND
NOR Flash NAND flash

NOR vs. NAND flash tutorial from Microchip Technologies: https://youtu.be/ELl3abwYQ90?t=211


Moving electrons:
Flash Erase and Writes

• Sets all bits back to 1


• High negative voltage applied to control gate forces electrons
out of floating gate back into p substrate (if they are there to
begin with)
• Or can apply high positive voltage and electrons get pulled
out toward control gate
Flash Erase and Write (NAND)

2
Flash Erase & Write (NOR)

2
Voila – Non-volatile flash
memory stick and SD card

Limitations: Erase cycles are damaging to the MOSFET structures


Partial solution: Wear leveling; newer devices use lower voltages
Microcontrollers & Memory
Arduino Uno R3 Teensy 3.6

Arduino Uno Teensy 3.6


Flash 32 kB 1 MB = 1000 kB
RAM 2 kB 256 kB
Flash Usage
• Reserve memory space for 3
ints
• Write the initial value into
those blocks of memory
• Print some stuff to Serial
• Go back and get those 3 ints
• Solve the quadratic equation
doing:
• Compute
• Store the result in a new variable
called D.
• Figure out if D is =0, + or –
• Compute the roots using
quadratic formula
• Print those results to Serial
• Check if user wants to update
RAMtheneeded
coefficients to actually do
all of these tasks!
RAM usage
• Stack: space for
stuff the MCU
knows is coming –
defined in functions
and interrupts

• Heap: space for stuff


that the MCU
doesn’t know is
coming (dynamic
allocation)
Figure 1. SRAM memory usage summary.
Image credit: Adafruit.com
Citations/Image Sources
• http://www.learnabout-electronics.org/fet_01.php (JFETs)
• https://
volga.eng.yale.edu/teaching-resources/flash-drives/methods-and-mate
rials

https://www.electronics-tutorials.ws/transistor/tran_5.html
• https://www.electronics-tutorials.ws/transistor/tran_6.html (MOSFT
operation)
• http://www.electronics-tutorials.ws/transistor/tran_7.html (MOSFET
motor control)
• http://www.engadget.com/2011/10/31/engadget-primed-ssds-and-yo
u
/
• https://www.youtube.com/watch?v=msi5GDz9JIw (hyperscience
youtube channel – reading flash contents)
• https://www.youtube.com/watch?time_continue=854&v=s7JLXs5es7I
(great summary of Flash memory construction and operation)
MOSFET Digital Switch: Motor
Control
Circuit component Motor Control Circuit
CMOS = Complementary MOS

5V in 0V out

0V in  5V out

Image credit: fmgomezcampos on youtube

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