PN Junction Diode immediately after it is formed :

P V N

- - - - Fr - + + + + +
- - - - - + E + + + +
- - - - - + F +
r
+ + +
Depletion region

After the PN junction diode is formed –

i) Holes from P region diffuse into N region due to difference in concentration.
ii) Free electrons from N region diffuse into P region due to the same reason.
iii) Holes and free electrons combine near the junction.
iv) Each recombination eliminates an electron and a hole.
v) The uncompensated negative immobile ions in the P region do not allow any
more free electrons to diffuse from N region.
vi) The uncompensated positive immobile ions in the N region do not allow any
more holes to diffuse from P region.
vii) The positive donor ions in the N region and the negative acceptor ions in
the P region are left uncompensated.
viii) The region containing the uncompensated acceptor and donor ions is
called ‘depletion region’ because this region is devoid of mobile charges.
Since the region is having only immobile charges, therefore, this region
is also called ‘space charge region’.
ix) The N region is having higher potential than P region.
x) So, an electric field is set up as shown in the figure.
xi) The difference in potential between P and N regions across the junction
makes it difficult for the holes and electrons to move across the junction.
This acts as a barrier and hence called ‘potential barrier’ or ‘height of the
barrier’.
xii) The physical distance between one side and the other side of the barrier is
called ‘width of the barrier’.
xiii) Potential barrier for Si is nearly 0.7 V and for Ge is 0.3 V.
xiv) The potential barrier opposes the motion of the majority carriers.
xv) However, a few majority carriers with high kinetic energy manage to
overcome the barrier and cross the junction.
xv) Potential barrier helps the movement of minority carriers.
Forward Bias:
Ih P V N Ie

- - - - - + + + + +
- - - - - + EE + + + +
- - - - - + + + + +
Depletion region

E
When the positive terminal of the battery is connected to P-region and
negative terminal is connected to N-region, then the PN junction diode is said
to be forward-biased.
i) Holes in P-region are repelled by +ve terminal of the battery and the free
electrons are repelled by –ve terminal of the battery.
ii) So, some holes and free electrons enter into the depletion region.
iii) The potential barrier and the width of the depletion region decrease.
iv) Therefore, a large number of majority carriers diffuse across the junction.
v) Hole current and electronic current are in the same direction and add up.
v) Once they cross the junction, the holes in N-region and the electrons in
P-region become minority carriers of charge and constitute minority
current.
vi) For each electron – hole recombination, an electron from the negative
terminal of the battery enters the N-region and then drifts towards the
junction.

In the P-region, near the positive terminal of the battery, an electron

breaks covalent bond in the crystal and thus a hole is created. The hole
drifts towards the junction and the electron enters the positive terminal of
the battery.
vii) Thus, the current in the external circuit is due to movement of electrons,
current in P-region is due to movement of holes and current in N-region is
due to movement of electrons.
viii) If the applied potential is increased, the potential barrier further
decreases. As a result, a large number of majority carriers diffuse
through the junction and a larger current flows.
Reverse Bias:
Ih P V N Ie

- - - - - + + + + +
- - - - - + EE + + + +
- - - - - + + + + +
Depletion region

E
When the negative terminal of the battery is connected to P-region and
positive terminal is connected to N-region, then the PN junction diode is said
to be reverse-biased.
i) Holes in P-region are attracted by -ve terminal of the battery and the free
electrons are attracted by +ve terminal of the battery.
ii) Thus, the majority carriers are pulled away from the junction.
iii) The potential barrier and the width of the depletion region increase.
iv) Therefore, it becomes more difficult for majority carriers diffuse across
the junction.
v) But the potential barrier helps the movement of the minority carriers. As
soon as the minority carriers are generated, they are swept away by the
potential barrier.
vi) At a given temperature, the rate of generation of minority carriers is
constant.
vii) So, the resulting current is constant irrespective of the applied voltage.
For this reason, this current is called ‘reverse saturation current’.
viii) Since the number of minority carriers is small, therefore, this current is
small and is in the order of 10-9 A in silicon diode and 10-6 A in germanium
diode.
Diode Characteristics:
If (mA)
Forward Bias:

n
io
D

eg
rRa
ne
Li
VB
+ + Vr (Volt) 0 Vk
V mA Vf (Volt)

Vk – Knee Voltage
VB – Breakdown Voltage

Reverse Bias:
D Ir (μA)

Resistance of a Diode:

+ + i) Static or DC Resistance Rd.c = V / I

V μA
ii) Dynamic or AC Resistance
Ra.c = ΔV / ΔI
PN Junction Diode as a +
●
Half Wave Rectifier: D ●
The process of
converting RL
alternating
current into ●
direct current ●
is called
‘rectification’. ●
D ●
The device
used for RL No output
rectification is
called ●
‘rectifier’. ●
The PN +
junction diode ●
offers low ●
D
resistance in
forward bias RL
and high
resistance in ●
reverse bias. ●
PN Junction Diode as a +
●
Full Wave Rectifier: D1
RL
When the diode A B
rectifies whole ● ●
of the AC wave, D2
it is called ‘full
●
wave rectifier’.
During the ●
positive half D1
cycle of the RL
input ac signal, A B
● ●
the diode D1
conducts and D2
current is ●
+
through BA.
●
During the
D1
negative half
cycle, the diode RL
A B
D2 conducts ● ●
and current is D2
through BA. ●
Special Purpose p-n Junction Diodes: If (mA)
Zener Diode
• Heavily doped
• Depletion Region is < 10-6 m
• Electric Field is very high (5x106 VZ
V/m)
Vr (Volt) 0 Vf (Volt)
• Reverse biased
• Internal Field emission or field Vz – Breakdown Voltage
ionisation
●
Unregulated Voltage VL

Ir (μA)
RS

Regulated
RL
Voltage VZ

● ●

Zener Diode as a Voltage Regulator

End of S & SC - II