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Mosfet

The document discusses the I-V characteristics of MOSFETs. It describes: 1) The different regions of operation for MOSFETs including the triode/linear region and saturation region. 2) The derivation of the key current equation for MOSFETs in the linear region based on assumptions about channel charge and gradual channel approximation. 3) How the current reaches its maximum value and enters saturation when VDS approaches VGS - VTh0, the pinch-off voltage.

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347 views

Mosfet

The document discusses the I-V characteristics of MOSFETs. It describes: 1) The different regions of operation for MOSFETs including the triode/linear region and saturation region. 2) The derivation of the key current equation for MOSFETs in the linear region based on assumptions about channel charge and gradual channel approximation. 3) How the current reaches its maximum value and enters saturation when VDS approaches VGS - VTh0, the pinch-off voltage.

Uploaded by

api-26783388
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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MOSFET

I-V Characteristics
MOSFET Structure
• MOS Capacitor
– Inversion forms channel
• Reverse Biased Junctions
– Source fills channel
– Drain empties channel
– Current of inversion charge by drift!
I-V Characteristics
• Regions of operation
– Regions of operation
• Triode and Linear region
– Pinch-off
• Saturation
• Channel Shortening
• Early Effect
– Body Effect
Equivalent Circuit
• gm
• gmb
• Leakage currents
• RC constants
• Capacitances
Recap of MOS-C relations
• Beyond strong Inversion
• VGB = φMS + ΨS + Vox (1)
• QG + Qox + QB + Qinv = 0 (2)
• For ΨS = 0 : VGB = VFB
• QB = 0; Qinv = 0
• QG = CoxVox = - Qox
• VFB = φMS - Qox/Cox
• For ΨS = 2ΨB : VGB = VT; Qinv = 0
• QB(2ΨB) = [ 2 εSi q NA(2ΨB)]1/2
• VT = VFB + 2ΨB + [ 2 εSi q NA(2ΨB)]1/2/Cox
Assumptions in Derivation of I-V
Characteristics
• VGS = VGB = φMS + Vox(x) + ψS(x)
• ψS(x) = 2ψB + V(x)
– Gradual Channel Approximation
• V(x) = Vch(x) + VSB
– Vch(x) = voltage with respect to source
• 2ψB = qNAwmax2/ 2εS
– Strong Inversion Approximation
• Vox = Eox tox
– Charge free oxide
Threshold Voltage
• For MOS capacitor
– Voltage required at gate with respect to bulk silicon
VGB = VT for inversion charge to form at the oxide-
silicon interface i.e. ψS = 2ψB
– VT = VFB + 2ΨB + [ 2 εSi q NA(2ΨB) / Cox]1/2
• For MOSFET
– Voltage required at gate with respect to source VGS =
VTh to form inversion channel at the source end i.e.
ψS = 2ψB
– VGS = VTh0 if VSB ≠ 0
– VTh0 = VFB + 2ΨB + [ 2 εSi q NA(2ΨB) / Cox]1/2
– Note inversion channel need not extend from source
to drain; inversion charge Qinv(x) is channel charge
Qch(x); it must exist at least at source end.
Derivation of I-V Characteristics
• Assume:
– VSB = 0 => VGS = VGB
– Channel complete – Qch(x) ≠ 0 for any x
• VGS = VGB = φMS + Vox(x) + ψS(x)
• ψS(x) = 2ψB + V(x) = 2ψB + Vch(x)
• Cox Vox = εox Eox tox/tox = εox Eox = Dox
• Cox Vox = - (Qox+ Qch(x)+ QB)
• VGS – V(x) = φMS - (Qox+ Qch(x)+ QB)/Cox + 2ψB
Channel Charge
• VGS – V(x) = φMS - (Qox+ Qch(x)+ QB)/Cox + 2ψB
• VTh0 = [φMS - (Qox+ QB)/Cox + 2ψB]
• VGS – V(x) – VTh0 = - Qch(x)/Cox
• Qch(x) => Mobile charge per unit area
– Qch(x). W. dx = q nch(x) tch(x) W dx
– Qch(x) = q nch(x) tch(x)
Current in Device
• Consider dx length of channel at x
• J(x) = - q nch(x) µ (dV/dx)
• IDS = - J(x)W tch(x)
• IDS = q nch(x) µ (dV/dx)W tch(x)
• Qch(x) = q nch(x) tch(x) ; V = f(x)
• VGS – V(x) – VTh0 = - Qmob(x)/Cox
• Qch(V) = Cox [VGS – V(x) – VTh0]
• IDS = Qch(x) µ (dV/dx)W
• IDS dx = Qch(V) µ W dV
I-V Characteristics - II
• IDS dx = Qch(V) µ W dV
• IDS dx = Cox [VGS – V(x) – VTh0] µ W dV
• Integrating :
– x -> 0 – L,
– V(0) = 0, V(L) = VDS
• IDS L = µ W Cox ([VGS – VTh0] VDS - 1/2 VDS2)
• IDS = µCox(W/L)([VGS – VTh0] VDS - 1/2 VDS2)
Saturation region
• IDS = µ Cox (W/L) ([VGS –VTh0 ] VDS - 1/2 VDS2)
• Maxima at VDS = [VGS –VTh0 ]
• At Maxima:
• IDS = 1/2 µ Cox (W/L) [VGS –VTh0]2

• Point of pinch-off
• Increase in voltage does not cause
increase in current
Operation
• VT referred to source
– VGS = VGB – VSB
• Operation
– VSB = 0, VDS => small
– IDS = µnCox [W/L] (VGS – VTh) VDS
• TECHNOLOGY parameters - µnCox
• Aspect ratio – Design Parameters - [W/L]
• Circuit parameters-(VGS – VTh) VDS

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