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Lecture-1 Introduction On VLSI

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Lecture-1 Introduction On VLSI

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tanjimur rahman
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© © All Rights Reserved
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Introduction on VLSI Design and Technology

Department of Electrical and Electronic Engineering


Khulna University of Engineering & Technology
Khulna-9203, Bangladesh
Short Bio

Ashraful G. Bhuiyan Former:


Dean, Faculty of EEE
 Prime Minister Gold Medalist Head, Dept. of EEE
 PhD in Electronics (Japan) Visiting Professor (2 Times)
University of Fukui, Japan
 Postdoctoral Fellow (JSPS)
 Invitational Fellow (JSPS)
Professor@EEE@2009
Senior Member, IEEE, USA Lecturer@1996
 Life Fellow, IEB, Bangladesh [email protected]
www.kuet.ac.bd/eee/ashraf
Office:
EEE Building, R # EEE 218

Ashraful G. Bhuiyan ([email protected]) www.kuet.ac.bd/eee/ashraf 2


Course Plan/Profile
1. Course No: EE 4121 Contact/Hours: 3 Hrs/Week (Sun-Mon-Thu)
2. Course Title: VLSI Design and Technology
3. Course Teacher: Ashraful G. Bhuiyan
4. Course Content:
Fabrication and processing technology: Crystal growth, wafer preparation, photolithography,
oxidation, diffusion, ion implantation, epitaxy, metallization, etching, NMOS and CMOS
fabrication technology.
Testing and packaging: Overview of silicon semiconductor technology, power dissipation,
packaging, silicon on insulator.
Introduction to GaAs technology: Ultra-fast VLSI circuits and systems.
5. Intended Learning Outcomes (ILOs):
At the end of the course the students will be able to:
 describe VLSI circuits and their application in the field electronics.
 design VLSI circuits for various electronic applications.
 describe fabrication and processing technology of VLSI circuits.
 understand bulk growth, epitaxial growth, lithography, doping, etching, etc.
 understand GaAs-based ultra-fast VLSI circuits and systems.

6. Date of Class Test: 24 February 2023 at 8.00 AM

7. Teaching Methodology/Strategy: White board, document camera and slide


presentation, Question and answer session, Assignments, spot tests and class test
Text & Reference Book:

I. Semiconductor Devices Basic Principles By: Jasprit Singh

II. Basic VLSI Design By: Douglas A. Pucknell and Kamran Eshraghian

III. Design of VLSI System A Practical Introduction By: Linda E. M. Brackenbury

IV. VLSI Technology by: S. M. SZE

V. Silicon VLSI Technology by: Plummer


A Brief History

Vacuum tubes Point contact Bipolar Junction First Integrated


• These devices Germanium Transistor (BJT) Circuit
would control the transistor • In 1950, Shockley • In 1958, Jack Kilby
flow of electrons in • 1947, John developed the first of Texas
vacuum. Baden, William Bipolar Junction Instruments
• Boeing B-29 would Transistor (BJT)
Shockley and • two bipolar
consist of 300-
1000 vacuum
Watter Brattain transistors
tubes. Each of Bell labs connected on a
additional discovered this single piece of
component would silicon, thereby
reduce the initiating the
reliability and “Silicon Age”
increase trouble-
shooting time.
Scale of Integration
►Very-large-scale integration (VLSI) is the process of creating an integrated
circuit (IC) by combining hundreds of thousands of transistors or devices into
a single chip.

1958 2018
IC’s----FF’s IC’s

More than
2 Transistor 1 Billion
Transistor
Dual Core+ Core I7 (2015): 1.9 billion and 22 nm

 This scale of growth has resulted from a continuous scaling of transistors and other
improvements in the Silicon manufacturing process.
Integration and Moore’s Law
► 1965: Gordon Moore(Intel cofounder) plotted transistor on each chip
► Moore's law: The number of transistors in a dense integrated circuit will be
doubled about every two years.

Integration Levels
SSI: 10 gates
MSI: 1000 gates
LSI: 10,000 gates
VLSI: > 10k gates
Chip Fabrication Processes
Crystal and Wafer Fabrication
Place for Integration
► Clean Room: a low level of environmental pollutants
► Company: Apple, IBM, AMD etc.

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