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Tunnel Diode Presentation

A tunnel diode exhibits negative resistance where increasing the forward voltage causes the current to decrease. This is due to the tunneling effect that occurs when there is a highly doped p-n junction with a very thin depletion region, allowing electrons to tunnel from the n-region conduction band to the p-region valence band. As voltage increases further, the bands become misaligned and tunneling current decreases, behaving like a regular p-n diode.

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Zulhilmi Balokolos
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659 views15 pages

Tunnel Diode Presentation

A tunnel diode exhibits negative resistance where increasing the forward voltage causes the current to decrease. This is due to the tunneling effect that occurs when there is a highly doped p-n junction with a very thin depletion region, allowing electrons to tunnel from the n-region conduction band to the p-region valence band. As voltage increases further, the bands become misaligned and tunneling current decreases, behaving like a regular p-n diode.

Uploaded by

Zulhilmi Balokolos
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Zulhilmi b Ab Rafit

A124667

A Tunnel Diode is s pn junction that exhibits negative resistance between two values of forward voltage voltage is increased the current through it decreases.

A pn junction with heavy doping of p type and n type semiconductor materials results in large no of majority carriers Because this large no of carriers, most are not used during initial recombination that produces depletion layer Tunneling effect occurs

p-n junction with highly doped regions creating very thin barrier (depletion region)

In such case, there is a probability that electrons can tunnel from the conduction band of n-region to the valence band of p-region

(a) the bottom of the n-side conduction band overlaps the p-side valence band (b) with a small forward bias electrons can directly tunnel across the small depletion region from the n-side conduction band into the p side valence band, (c ) for increased forward voltage the tunnel current ceases as the two bands do not overlap anymore (regular pn junction)

Also known as negative resistance As voltage begins to increase, electrons at first tunnel pass through the very narrow p-n junction barrier because filled electron states in the conduction band on the n-side become aligned with empty valence band hole states on the p-side of the pn junction. As voltage increases further these states become more misaligned and the current drops

Zero bias, no current flow

Small forward bias, Potential barrier still very high Electron tunnel tunnel current

Lager voltage Electron tunnel = Hole create Maximum tunneling current

Higher voltage #electron decrease at n-reagion start tunneling current decrease

Higher voltage Tunneling Current = 0 regular diode forward current due to electron hole injection increases due to lower potential barrier.

Higher voltage I-V characteristic similar to a regular p-n diode.

electrons in the valence band of the p side tunnel pass directly towards the empty states present in the conduction band of the n side creating large tunneling current which increases with the application of reverse voltage. Similar to zener diode

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