Scribd
Upload
28 views

Introduction To Flash Memory in VLSI

Uploaded by

Kusuma priya Sai ram
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
28 views

Introduction To Flash Memory in VLSI

Uploaded by

Kusuma priya Sai ram
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
You are on page 1/ 6

Introduction to Flash

Memory in VLSI

Flash memory is a type of non-volatile computer memory that can be


electrically erased and reprogrammed. It is a crucial component in modern
VLSI (Very Large Scale Integration) circuits, enabling versatile data storage
and efficient device operation.

MK
by M Kusuma
Principles of Flash Memory Operation
Reading
Charge Storage
Reading flash memory involves sensing the charge state of the
In flash memory, data is stored by controlling the amount of floating gate to determine the stored data value.
charge in a floating gate transistor.

1 2 3

Programming
Programming flash memory involves injecting or removing
electrons from the floating gate to change its charge state.
Advantages and Disadvantages of Flash Memory

Advantages Disadvantages
• Non-volatile data storage • Limited write endurance
• Faster read/write speeds than hard drives • Potential for data loss over time
• Smaller form factor and lower power consumption • Higher cost per bit compared to other memory types
Flash Memory Cell
Structures and Scaling
1 Cell Structures
Flash memory cells utilize floating gate transistors to store data. The
structure has evolved from single-level cells (SLC) to multi-level
cells (MLC) and 3D NAND architectures.

2 Scaling
Scaling of flash memory cells has enabled increased storage density
and reduced cost per bit, but also introduces challenges such as
increased noise, interference, and reliability concerns.
Flash Memory Programming and Erasing
Techniques

Programming Erasing Wear Leveling


Flash memory is programmed by Erasing flash memory involves Wear leveling techniques are used to
applying a high voltage to the control applying a high voltage to the source, distribute program/erase cycles evenly
gate, which injects electrons into the which removes electrons from the across the memory cells, improving
floating gate. floating gate. endurance and reliability.
Future Trends and Challenges in Flash
Memory Technology

Scaling
Continued scaling of flash memory cells to smaller geometries to increase storage density and reduce costs.

Energy Efficiency
Improving energy efficiency through advanced programming and erase techniques and architectures.

Reliability
Addressing challenges related to data retention, endurance, and other reliability issues as cells continue to scale.

You might also like