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Lecture # 1 Load Line Analysis and Biasing of BJT

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0% found this document useful (0 votes)
7 views

Lecture # 1 Load Line Analysis and Biasing of BJT

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ananyasingla072
Copyright
© © All Rights Reserved
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Analog and Digital Systems

(UEE505)

Lecture # 1
Load Line Analysis and Biasing of BJT

Deptt. Of Electrical & Instrumentation Engineering


Thapar Institute of Engineering & Technology Patiala, India
Load Line
• Defined as locus of operating points on the output
characteristics of transistor.
• Line on which the operating point(Q pt) moves during the
passage of ac signal.
• The Q pt is a point on load line which represent dc
collector emitter voltage and collector current in the
absence of ac signal.

• Whenever ac signal is applied for amplification, variations


in collector emitter voltage and collector current take place
Load Line Analysis
Load Line Analysis
Example
Plot the dc load line for the given circuit:

5
Selection of operating point
Selection of operating point
Selection of operating point
Transistor Biasing
• The proper flow of zero signal collector current and
maintenance of proper CE voltage during the passage of
signal is known as transistor biasing.
• If the transistor is not biased properly, it would produce
unfaithful amplification in the output signal.
• Conditions that must be satisfied to achieve Faithful
amplification :
--- Proper zero signal collector current
This current must be greater than
equal to maximum collector current
due to signal alone.
Transistor Biasing
---- Minimum proper BE voltage at any instant
BE voltage should not fall below 0.5V for Ge and 0.7V for Si

---- Minimum proper CE voltage at any instant


CE voltage should not fall below 0.5V for Ge and 1V for Si
Need for Bias Stabilization
• Temperature dependence of collector current and
individual parameters of Transistor.
• Parameters changes from unit to unit.
If Q pt is not stabilized, then there can be phenomenon
called Thermal Runway.(The self destruction of
unstabilised transistor )
Requirements of a Biasing Circuit
• Establish the Q pt in middle of active region of the
transistor characteristics.
• Stabilize Collector Current against temperature variations.
• Make Q pt independent of transistor parameters.
References
• Boylestad R. L., Electronic Devices and Circuit
Theory, Pearson Education.
• NN Bhargava, DC Kulshreshtha and SC Gupta, Basic
Electronics and Linear Circuits, McGraw Hills.

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