Tilak Education Society’s

Tilak Junior College of Science & Commerce

Seawoods, Navi Mumbai.
www.tilakedu.com

Topic: Electronic Components

(CSII )

Teacher Name: Mrs. Shalaka Kulkarni

 Electronic Components

Passive Components Active Components

Resistors Electron Tubes

Capacitors Semiconductors

Inductors
 Semiconductors
A semiconductor is a substance whose
resistivity lies between the conductors and
insulators.
• Semiconductors have the resistivity which is
less than insulators and more than
conductors.
• Semiconductors have negative temperature
co-efficient.
• The resistance in semiconductors, increases
with the decrease in temperature and vice
versa.
• The Conducting properties of a
Semiconductor changes, when a suitable
metallic impurity is added to it.
INTRINSIC SEMICONDUCTORS
An intrinsic semiconductor is a semiconductor in which no other
material is intentionally doped (similar to mixing). Example: Si, Ge.
Notes: It behaves as an insulator at normal temperature .

EXTRINSIC SEMICONDUCTORS
The Extrinsic Semiconductor is a semiconductor that is doped with
certain impurities. Addition of these impurites called as dopants to
a semiconductor greatly increases the conductivity of
semiconductor. The process is called doping of semiconductor.

Notes:
1. The Dopants are usually either third group or fifth group
elements. Examples of dopants: As, Sb, B, In, etc
2. An impurity added is of very small magnitude .
n-Type Semiconductor
Silicon which is doped to increase the number of free
electrons is called n-type semiconductor, where the
n stands for negative.
To increase the number of free electrons,
pentavalent impurities such as phosphorus,
antimony or arsenic are added to silicon.
Pentavalent atoms, as the name suggests, have five
valence electrons. Following figure shows a
phosphorus atom.
 In n-type semiconductor, a pentavalent atom is
in the center, surrounded by four silicon atoms. As we
know, a pentavalent atom has five valence electrons. As
before, neighboring silicon atoms share four electrons
with a pentavalent atom. But this time, there is an extra
electron left over (Since valence orbit can hold no more
than eight electrons).

Because each pentavalent atom in a silicon crystal

produces one free electron, the resulting doped material
has a large number of free electrons.
In an n-type semiconductor, as free electrons are greater in
number than holes, free electrons are called majority
carriers and holes are called minority carriers. Because the
pentavalent impurities donate an extra electron to the
silicon crystal, they are often referred to as donor
impurities.
p-Type Semiconductor
Silicon which is doped to increase the
number of holes is called p-type
semiconductor, where the p stands for
positive.
To increase the number of holes, trialent
impurities such as aluminum, boron, or
gallium are added to silicon. Trivalent
atoms, as the name suggests, have three
valence electrons. Following figure shows a
boron atom.
 In p-type semiconductor, a
trivalent atom is in the center,
surrounded by four silicon atoms.
Since the trivalent atom originally had
only three valence electrons and each
neighbor shares one electron, only
seven electrons are in the valence
orbit. This means that a hole exists in
the valence orbit of each trivalent
atom.
Because each trivalent atom in a silicon
crystal produces one hole, the resulting doped
material has a large number of holes.
In an p-type semiconductor, as holes are
greater in number than free electrons, holes
are called majority carriers and free electrons
are called minority carriers.
A trivalent atom is also called an acceptor
Difference between n type and p type semiconductor

n type p type
 pn junction diode

A manufacturer can produce a single silicon crystal with p-type material on

one side and n-type on the other side, as shown in the figure. The border
between p-type and n-type is called the PN junction.
 The Depletion Region
• An N-type semiconductor has a larger
number of free electrons than a P-type
semiconductor. Due to this high
concentration of electrons on the N-
side, they repel each other.
• Due to repulsion, free electrons spread
(diffuse) in all directions. Some of them
cross the junction.
• When a free electron enters the p
region, it is attracted to the positive
hole and recombines with it.
• When this happens, the hole
•When the free electron falls into a hole on
the P-side, the P-side atom gains an extra
electron.
• The atom which gains an extra electron
has more number of electrons than
protons, due to which it becomes a
negative ion.
•Similarly, each free electron that leaves
the N-side atom creates a hole in the N-
side atom. The atom that loses an electron
has more number of protons than
electrons, due to which it becomes a
positive ion.
•So each time an electron crosses the
As opposite types of ions are produces near junction .These ions oppose further flow of
electrons from n region and holes from p region, This opposing force of ions is called
depletion region , The barrier potential for silicon diode is 0.7 V and for germanium it is
0.3 C
A

B
During the negative half-cycle, the diode is reverse biased. In this case,
the diode will appear as an open switch, and no voltage appears across
the load resistor.
The ac voltage across the secondary winding changes polarities
after every half cycle of the input wave. During the positive half-
cycles of the input ac voltage i.e. when the upper end of the
secondary winding is positive w.r.t. its lower end, the diode is
forward biased and therefore conducts current.

During the negative half cycles of the input ac voltage i.e. when
the lower end of the secondary winding is positive w.r.t. its
upper end, the diode is reverse biased and so does not conduct.
Thus during the negative half cycles of the input ac voltage, the
current through and the voltage across the load remains zero.
The reverse current, being very small in magnitude, is
neglected. Thus for the negative half cycles, no power is
delivered to the load.
 Zener diode

If reverse biased voltage applied to the p-n junction

diode is highly increased, a sudden rise in current
occurs. At this point, a small increase in voltage will
rapidly increases the electric current. This sudden rise in
electric current causes a junction breakdown called
zener breakdown. And voltage is called break down
voltage.

A zener diode is a p-n junction semiconductor device

designed to operate in the reverse breakdown region.
The breakdown voltage of a zener diode is carefully set
by controlling the doping level during manufacture
 What is zener diode?

A zener diode is a special type of device designed to

operate in the zener breakdown region. Zener diodes
acts like normal p-n junction diodes under forward
biased condition. When forward biased voltage is applied
to the zener diode it allows large amount of electric
current and blocks only a small amount of electric
current.
Zener diode is heavily doped than the normal p-n
junction diode. Hence, it has very thin depletion region.
Therefore, zener diodes allow more electric current than
the normal p-n junction diodes.
The zener breakdown voltage of the zener diode is depends on the
amount of doping applied. If the diode is heavily doped, zener
breakdown occurs at low reverse voltages. On the other hand, if the
diode is lightly doped, the zener breakdown occurs at high reverse
voltages.
Zener diode applications
Zener diodes are used for voltage regulator ,to stabilize voltage
 LED stands for Light Emitting Diode
•They are a special type of diode that convert electrical energy into
light.
• They have very similar electrical characteristics to a normal
PN junction diode.
•That’s why the symbol of LED is similar to the normal PN junction
diode except that it contains arrows pointing away from the diode
indicating that light is being emitted by the diode
Infra-Red

Red

Amber

Yellow

Green

Blue

White
 LED Working
•Like an ordinary diode, the LED operates only
in forward bias condition.
•When the LED is forward biased, the free
electrons cross the PN junction and recombine
with holes.
•Since these electrons fall from a higher to a
lower energy level, they radiate energy in the
form of photons (light).
•In ordinary diodes, this energy is radiated as
heat while in an LED, energy is radiated as
light.
•This effect is called Electroluminescence.
• LEDs are made of elements such as gallium,
 Photodiodes
Photodiodes are specially designed to
operate in reverse bias condition. Reverse
bias means that the p-side of the photodiode
is connected to the negative terminal of the
battery and n-side is connected to the
positive terminal of the battery.
Photodiode is very sensitive to light so when
light or photons falls on the photodiode it
easily converts light into electric current.
•When external light energy is supplied to the
p-n junction photodiode, the
valence electrons in the depletion region
gains energy.
•If the light energy applied to the photodiode
is greater the band-gap of semiconductor
material, the valence electrons gain enough
energy and break bonding with the parent
atom.
•The valence electron which breaks bonding
with the parent atom will become free
electron.
Cadmium selenide, cadmium
sulphide

Used as light sensor or

transducer