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Diffusion

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Persi Persi
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5 views

Diffusion

Uploaded by

Persi Persi
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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DIFFUSION

• Diffusion is a process of adding impurities atoms froms a region with high


concentration semiconductor of low concentration.
• The dopants or impurity atoms are added to the silicon (semiconductor
material) changes its resistivity.
• The process of diffusion is highly dependent on the temperature.
• The depth and width of the impurities depend on the temperature range
and the concentration.
• The high doping concentration improves the conductivity of a metal.
• For ex; the boron or indium diffusion on the n-type region forms a p-n
junction
• Most of these diffusion processes occur in two steps:
• 1. Depositon(pre –deposition) :dopantsa(s)into the wafer surface
• 2.Drive –in –oxidation:(spread) the dopants to desired path
Pre-deposition:
• pre-deposition is also known as constant source diffusion.
• In this deposition the impurity concentration is maintained constant over the
surface of the wafer.
• Deposition (also called predeposition, dep, or predep) takes place in a tube
furnace, with the wafers placed on a quartz “boat” in the flat zone of the
tube.
• A source of dopant atoms is located in the source cabinet and their vapors are
transferred into the tube at a required concentration.
• Liquid, gas, and solid dopant sources are used.
• solid dopant source;
• Liquid dopant source:

• Gaseous dopant source;


• There are mainly two types of physical mechanisms by which the
impurities can diffuse into the lattice. They are
I. Substitutional diffusion:

• interstitial diffusion:
FICKS LAWS OF DIFFUSION

• The diffusion rate of impurities into semiconductor lattice depends on the


following:
• Mechanism of diffusion
• Temperature
• Physical properties of impurity
• The concentration gradient of impurities.
• The behaviour of diffusion particles is governed by ficks law, which when solved for
appropriate boundary conditions, gives rise to various dopant distributions ,called
profiles which are approximated during actual diffusion procceses.
The diffusion constant of a material is also referred to as ‘DIFFUSION
COEFFFIENT’ or simply diffusivity.
• It is expressed in units of length2/time,.the negative sign of the right
side of the equation indicates that the impurities are flowing in the
direction of lower concentration.
DIFFUSION PROFILES

• Depending on boundary equations the ficks law has two types of


solutions.
• These solutions provides two types of impuritydistribution namely
constant source distribution namely constant source distribution
following complimentary error function(erfc).
• Constant sorce(erfc)distribution:
• In this impurity distribution ,the impurity concentration at the
semiconductor surface is maintained at a constant level throughout the
diffusion cycle.
• N(o,t)=Ns=constant
• The soln to the diffusion equation which is applicable in this situation
is most easily obtained by first considering diffusion inside a material
in which the initial concentration changes in same plane as x=0,from
Ns to 0.the eqn can be written as
• N(o,t)Ns=constant and N(x,t)=0
• Shown below is a graph of the complementary error function for a
range of values of its argument.

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