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Lecture 1

Uploaded by

akech1326
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Welcome to NE345

Photonic materials and devices!


NE345
Photonic Materials and Devices
Introduction and overview

Instructor: Dayan Ban


Email: [email protected]
QNC4603, ext. 37467
Office hour: Thurs 4:30-5:30pm

Mid-term: Mid October,

TA: Rebecca Mac


Office QNC 4621,
Email: [email protected],
office hour: Thurs.3:00-4:00pm
Basic information
• Course description
The course will cover some basic knowledge on optics and photonics, including
basic optical phenomena, basic photonic devices such as optical waveguide,
optical fibers, light emitting diodes, lasers, photodetectors and photovoltaic
devices.
• Textbook:
S. O. Kasap “Optoelectronics and photonics: principles and practices”
The lectures will basically follow the contents of the textbook. However, due to
time limitation, we won’t be able to cover all the contents of the textbook.
Schedule and Grading
• Lectures: week 1-13 (Sept 04 – Dec 03) DWE 3518
• No labs
• Mid-term: Week 7, middle Oct.
• Final exam Week 14, Dec. 06-22 (Tentatively)
• Homework (~5-6 assignments): 15%
• Mid-term: 30%
• Final: 55%
Learning objectives
• Basic knowledge on photonic materials
• The basic operation principles of photonic devices, e.g.,
semiconductor laser, photodetector, waveguide, optical
fiber, photovoltaic device
• Interactions among electron, hole, photon, phonon.
Energy bands of semiconductor, electron-hole radiative
recombination, optical mode confinement, stimulated
radiative emission
• Key performance characteristics of optoelectronic
devices, efficiency, responsivity, threshold, noise, IV, LI
curves.
• Some applications of the photonic devices
Introduction
• Definition: Photonic devices in which light interacts
with solid state materials such as
dielectrics/semiconductors/metals
• Photonic devices includes
Dielectric waveguide, optical fiber, optical fiber grating, laser diodes, light-
emitting diodes, photovoltaic devices, directional couplers, electrooptic
modulators, photodetectors, semiconductor optical amplifier,
• Important applications such as fiber optical
communication, optical data storage (CD, DVD),
lighting (traffic lights), etc.
III-V compound
semiconductor
Group III Group V

• GaAs, InP, AlAs, InAs, InGaAs, AlGaAs, InGaAsP


Compound semiconductors

2.168
5.66

1.344
1.424 5.87
5.65

0.354
6.06

Lattice constants (Å)


GaAs
• Ga: atomic number 31, configuration
[1s2 2s2 2p6 3s2 3p6 3d10] 4s2 4p1
• As: atomic number 33, configuration
[1s2 2s2 2p6 3s2 3p6 3d10] 4s2 4p3
• GaAs: Zinc-blende structure – two interpenetrating
face-centered cubic lattices, one made of Ga, and the
other made of As
Zinc-Blende Lattice structure

Face-centered cubic lattices Zinc-Blende lattice

Two overlapping FCC


Shifted FCCs
Planar
bonding
diagram

(a) A planar bonding diagram for a GaAs lattice, each bond consists of two valence electrons shared by a gallium and
an arsenic atom.
(b)The energy-band diagram in real space shows the valence-band edge E v below which all states are occupied, and
the conduction band edge Ec above which all states are empty. The separation Ec-Ev is the band gap Eg.
(c) A bonding diagram showing a broken bond due to the absorption of a photon with an energy above the band gap.
A free electron-hole pair is created. Note that the photogenerated electron is free to move around and the hole is
also free to hop around at different bonds between the Ga and As atoms.
(d)The energy-band diagram showing the energy levels of the electron and the hole.
Absorption and Emission
• Absorption of a photon-creation of an electron-
hole pair
hc 1.24
h   ( eV )  E g =872 nm
 
• Spontaneous emission: an electron in the
conduction band recombines with a hole in the
valence band and excess energy emerges as a
photon
• Stimulated emission, in the presence of a photon
propagating in the semiconductor with electrons
in the conduction band and holes in the valence
band, the photon may stimulate the downward
transition of the electron from the conduction
band to the valence band and emit another
photon
Growth Techniques
• Molecular Beam Epitaxy (MBE)
• MOCVD (Metal-organic chemical vapor deposition)
• Lattice match
• Monolayer precision
• Heterojunction (GaAs/AlxGa1-xAs)

Ec
Ec
1.424eV Eg(x)

Ev
Ev
GaAs AlxGa1-xAs
Heterostructures
• Carrier and photon confinement

Energy
(eV)

Photon
Optical density
refractive
index

Growth direction
electrons holes
Band-gap engineering
• Fiber-optical communication: 1.33 m, 1.55 m
• Band-gap engineering, tune band gap of material to that
wavelengths
• InAs, Eg=0.354 eV, GaAs, Eg=1.424 eV
• In0.53Ga0.47As, Eg=0.8 eV, =1.55m, lattice matched to InP
• AlxGa1-xAs/GaAs material system
• a(AlxGa1-xAs)=xa(AlAs)+(1-x)a(GaAs)
• Eg(AlxGa1-xAs)= 1.424+1.247x (eV) for 0<x<0.4
Separate-confinement
heterostructure (SCH) quantum well
structure
Energy (eV)
• An actual energy band
diagram of GaAs/AlGaAS laser.
• 100 Å GaAs: active layer
• AlGaAs: cladding layer
(submicron in thickness)
• Improve device performance,
• lower threshold current,
• higher temperature stability,
• improved linewidth
enhancement factor,
Epitaxial layer growth direction • wavelength tunability, etc.
The tentative outline of the
lectures
Chapter 1: Wave nature of light (~2 weeks)

• Light waves in a homogeneous medium


• Refractive index
• Group velocity and group index
• Poynting vector
• Snell’s law and total internal reflection (TIR)
• Fresnel’s equations
• Multiple interference and optical resonators
Chapter 2: Dielectric waveguides and
optical fibers (~2 weeks)
• Symmetric planar dielectric slab waveguide
• Modal and waveguide dispersion
• Step index fiber
• Numerical aperture
• Dispersion in single mode fibers
• Attenuation in optical fibers
Chapter 3: Semiconductor and light
emitting diodes (~1.5 weeks)
• Review of semiconductor concepts and energy bands
• Direct and indirect bandgap semiconductors
• pn junction principles
• The pn junction band diagram
• Light emitting diodes (LEDs)
• LED materials
• LED characteristics
Chapter 4: Stimulated emission and
lasers (~2.5 weeks)
• Stimulated emission and photon amplification
• Stimulated emission rate and Einstein coefficients
• Gas lasers: the He-Ne laser
• Laser oscillation conditions
• Principle of the laser diode
• Heterostructure laser diode
• Elementary laser diode characteristics
• Steady state semiconductor rate equation
• Quantum well devices
Chapter 5 Photodetectors (~2 weeks)
• Principe of the pn junction photodiode
• Ramo’s theorem and external photocurrent
• Absorption coefficient and photodiode materials
• Quantum efficiency and responsivity
• The pin photodiode
• Heterojunction photodiodes
• Phototransistors
• Photoconductive detectors and photoconductive gain
• Noise in photodetectors
Chapter 6 Photovoltaic devices
(~1.5 weeks)
• Solar energy spectrum
• Photovoltaic device principles
• pn junction photovoltaic I-V characteristics
• Series resistance and equivalent circuit
• Solar cells materials, devices and efficiencies.

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