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Threshold Voltage 2. I/V Characteristics of MOSFET

lecture notes of vlsi

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18 views

Threshold Voltage 2. I/V Characteristics of MOSFET

lecture notes of vlsi

Uploaded by

satyampandey2634
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Objective of

Lecture
1. Threshold Voltage
2. I/V Characteristics of MOSFET
Threshold Voltage
Threshold Voltage
Threshold Voltage
Threshold Voltage
Threshold Voltage
Threshold Voltage
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Derivation of I/V
Characteristics
Summery of Lecture
1. Threshold Voltage
2. Overdrive Voltage
3. I/V Characteristics of MOSFET
4. Drain Current
5. Register Ron
1) What is the difference between polysilicon and metal

polysilicon
Polycrystalline silicon, or multicrystalline silicon, also called polysilicon, poly-Si, or mc-
Si, is a high purity polycrystalline form of silicon.
polycrystalline silicon, highly doped with donors or acceptors to reduce its electrical
resistance was used to replace aluminium.
Metal
Solid material which is typically hard, shiny, malleable, fusible, and ductile, with good
electrical and thermal conductivity (e.g. iron, gold, silver, and aluminium, and alloys such as
steel).
2) why metals were replaced by polysilicon and now when they metals
are re-introduced again.?
In the early days of semiconductor industry, the metal, Aluminum, was generally
preferred for gate material of MOS.
But later on, polysilicon has been preferred as gate material. The main reason behind this
transition to polysilicon :
 During fabrication process, if the gate mask is misaligned, it creates a parasitic
overlap input capacitance Cgd and Cgs.
The capacitance Cgd is more harmful because it is a feedback capacitance. As a
result of miller capacitance, there is a reduction in the transistor’s switching speed.
•The other reason for selecting polysilicon is that the threshold voltage of MOS
transistor is correlated with the work function difference between the gate and the
channel.
Earlier, metal gates were used when operating voltages were in the range of 3-5 volts.
But, as the transistors were scaled down, which ensured that the operating voltages of
the device were also brought down.
A transistor with such high threshold voltage becomes non-operational under such
conditions.
Recently, after 45nm (for Intel) and 28nm (for TSMC), gates are again made with metal
in conjunction with high-k insulators.

k-value : K refer to dielectric constant

k-value, higher than that of silicon nitride (k > 7).

Low-k dielectrics are dielectrics having a dielectric constant, or k-value, lower than
that of a silicon dioxide (k < 3.9).
3) what is the advantage of having depletion mode MOS over enhancement
mode MOS?
Enhancement-mode MOSFETS (metal–oxide–semiconductor FETs) are the
common switching elements in most integrated circuits. These devices are off at
zero gate–source voltage. Such devices are used as load resistors. Depletion
MOSFET is free of leakage current.
Depletion-mode MOSFET, the device is normally ON at zero gate–source
voltage. MOSFETs with enhancement modes are the common switching elements in
most MOSs. These devices are deactivated at zero gate voltage and can be switched on
by powering the gate.
In practical circuits, the default switches are preferable in order to avoid erroneous
circuits tripping. The MOSFET enhancement type mode will be disabled for the
gateway at source 0v because there is no channel to conduct.

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