Halliday General Physics

41 - Electrical Properties of Materials

Re-edited by Dr. Tsun-Hsin Wang

[email protected]
Copyright belongs to the original
book which is available on Amazon
https://a.co/d/fLt7Gxi
 Outline
 41-1 What Is Physics?
 41-2 The Electrical Properties of Solids
 41-3 Energy Levels in a Crystalline Solid
 41-4 Insulators
 41-5 Metals
 41-6 Semiconductors
 41-7 Doped Semiconductors
 41-8 The p-n Junction
 41-9 The Junction Rectifier
 41-10 The Light-Emitting Diode (LED)
 41-11 The Transistor

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 41-1 What Is Physics?
 What are the mechanisms by which a
material conducts, or does not conduct
electricity?
 The answers are complex since they involve
applying quantum mechanics not just to
individual particles and atoms, but to a
tremendous number of particles and atoms
grouped together and interacting.

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 41-2 The Electrical Properties of Solids
Face-centered cubic
 Crystalline solid: solid whose atoms
are arranged in a repetitive three-
dimensional structure (lattice). Basic
unit (unit cell) is repeated
copper
throughout the solid.
Diamond lattice
 Basic Electrical Properties
• Resistivity .
• Temperature coefficient of resistivity
. silicon or
carbon
• Number density of charge carriers n.
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 41-3 Energy Levels in a Crystalline Solid
 Electronic
configuration of
copper atom:
1s2s22p63s23p63d104s1
 Pauli exclusion→
localized energy
states split to
accommodate all
electrons, e.g., not
allowed to have 4
electrons in 1s state.
 New states are
extended throughout
material.
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 41-4 Insulators
Unoccupied States

Fermi Energy

Occupied States

 In metals, electrons in the highest occupied band can

readily jump to higher unoccupied levels.
 These conduction electrons can move freely
throughout the sample, like molecules of gas in a
closed container.

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 Example 41-1
Approximately
what is the
probability that,
at room
temperature (300
K), an electron at
the top of the
highest filled band
in diamond (an
insulator) will
jump the energy
gap Eg in Fig. 41-
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4a? For diamond,
 Example 41-1
Nx  Eg /kT
e
N0
Eg 5.5
  5
 213
kT 8.62 10 300
Nx  Eg /kT  213  93
P e e 3 10
N0

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 41-5 Metals

 Density of state: N  E   8 2 m 2
1
E 2

h3
1
 Fermi-Dirac statics: P  E   E  E  kT
e F 1
2
2 2
 Fermi energy: E   3 
3
h 2 0.121h 2

F   m n 3
 n 3

 16 2  m
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 41-6 Semiconductors
Semiconductors are
qualitatively similar to
insulators but with a
much smaller (~1.1 eV for
silicon compared to 5.5 for
diamond) energy gap Eg
between top of the valence
band and bottom of the
conduction band.
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 41-7 Doped Semiconductors

n-type p-type
Pure Si doped Si doped Si

Phosphorous Aluminum acts

acts as donor as acceptor

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 41-7 Doped Semiconductors

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 Example 41-6
The number density n0 of
conduction electrons in pure silicon
at room temperature is about 1016
m － 3. Assume that, by doping the
silicon lattice with phosphorus, we
want to increase this number by a
factor of a million (106). What
fraction of silicon atoms must we
replace with phosphorus atoms?
(Recall that at room temperature,
thermal agitation is so effective
that essentially every phosphorus
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 Example 41-6
6 6 6
10 nO nO  nP nP 10 nO  nO 10 nO
6 16 22 3
10 10 10 ( m )
23
2330 6.02 10 28 3
nSi  5 10 (m )
0.0281
22
nP 10 1
 28
 6
nSi 5 10 5 10

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 41-8 The p-n Junction

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 41-9 The Junction Rectifier

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 41-9 The Junction Rectifier

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 41-10 The Light-Emitting Diode (LED)

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 41-10 The Light-Emitting Diode (LED)

The junction
laser or laser
diode

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 41-11 The Transistor

Fig. 41-20

metal-oxide-semiconductor-field-effect-transistor (MOSFET)

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 41-11 The Transistor

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