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FET Transconductance Presentation

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FET Transconductance Presentation

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FET Transconductance

NAME: REZANUR RAHMAN DEPRO


ROLL: 2103071
TOPIC: FET Transconductance
Introduction to FET
Transconductance
• - Transconductance (gm) is a key parameter in
FETs, representing the efficiency of current
modulation.
• - It is the ratio of the change in drain current
(Id) to the change in gate-to-source voltage
(Vgs), with drain-source voltage (Vds)
constant.
• - gm = ΔId / ΔVgs.
Importance of Transconductance
• - Determines the amplification capability of
the FET.
• - High transconductance indicates better
device performance.
• - gm affects the gain and speed of amplifiers in
circuits.
Factors Affecting Transconductance
• - Device structure and material properties.
• - Operating point: Vgs and Vds levels.
• - Temperature: gm decreases with higher
temperatures.
• - Process variations and fabrication quality.

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