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FET Transconductance
NAME: REZANUR RAHMAN DEPRO
ROLL: 2103071 TOPIC: FET Transconductance Introduction to FET Transconductance • - Transconductance (gm) is a key parameter in FETs, representing the efficiency of current modulation. • - It is the ratio of the change in drain current (Id) to the change in gate-to-source voltage (Vgs), with drain-source voltage (Vds) constant. • - gm = ΔId / ΔVgs. Importance of Transconductance • - Determines the amplification capability of the FET. • - High transconductance indicates better device performance. • - gm affects the gain and speed of amplifiers in circuits. Factors Affecting Transconductance • - Device structure and material properties. • - Operating point: Vgs and Vds levels. • - Temperature: gm decreases with higher temperatures. • - Process variations and fabrication quality.