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05_Internal Memory

Chapter 5 discusses various types of semiconductor memory, including RAM, ROM, and their subtypes like DRAM and SRAM, highlighting their characteristics such as volatility, write mechanisms, and storage capabilities. It explains the operational differences between dynamic and static RAM, the organization of memory chips, and the importance of error correction. Additionally, it covers advanced memory technologies like SDRAM and DDR SDRAM, emphasizing their synchronization with system clocks and enhanced data transfer rates.

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6 views

05_Internal Memory

Chapter 5 discusses various types of semiconductor memory, including RAM, ROM, and their subtypes like DRAM and SRAM, highlighting their characteristics such as volatility, write mechanisms, and storage capabilities. It explains the operational differences between dynamic and static RAM, the organization of memory chips, and the importance of error correction. Additionally, it covers advanced memory technologies like SDRAM and DDR SDRAM, emphasizing their synchronization with system clocks and enhanced data transfer rates.

Uploaded by

aa70525
Copyright
© © All Rights Reserved
Available Formats
Download as PPTX, PDF, TXT or read online on Scribd
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Chapter 5

Internal Memory
Semiconductor Memory Types

Memory Type Category Erasure Write Mechanism Volatility

Random-access
Read-write memory Electrically, byte-level Electrically Volatile
memory (RAM)

Read-only
Masks
memory (ROM)
Read-only memory Not possible

Programmable
ROM (PROM)

Erasable PROM
UV light, chip-level
(EPROM) Nonvolatile

Electrically

Electrically Erasable Read-mostly memory


Electrically, byte-level
PROM (EEPROM)

Flash memory Electrically, block-level


Semiconductor Memory

• RAM
—Misnamed as all semiconductor memory is
random access
—Read/Write
—Volatile
—Temporary storage
—Static or dynamic
Memory Cell Operation
Dynamic RAM

• Bits stored as charge in capacitors


• Charges leak
• Need refreshing even when powered
• Simpler construction
• Smaller per bit
• Less expensive
• Need refresh circuits
• Slower
• Main memory
•
Dynamic RAM Structure
DRAM Operation

• Address line active when bit read or written


— Transistor switch closed (current flows)
• Write
— Voltage to bit line
– High for 1 low for 0
— Then signal address line
– Transfers charge to capacitor
• Read
— Address line selected
– transistor turns on
— Charge from capacitor fed via bit line to sense amplifier
– Compares with reference value to determine 0 or 1
— Capacitor charge must be restored
Static RAM

• Bits stored as on/off switches


• No charges to leak
• No refreshing needed when powered
• More complex construction
• Larger per bit
• More expensive
• Does not need refresh circuits
• Faster
• Cache
•
Stating RAM Structure
Static RAM Operation

• Transistor arrangement gives stable logic


state
• State 1
—C1 high, C2 low
—T1 T4 off, T2 T3 on
• State 0
—C2 high, C1 low
—T2 T3 off, T1 T4 on
• Address line transistors T5 T6 is switch
• Write – apply value to B & compliment to
B
SRAM v DRAM

• Both volatile
—Power needed to preserve data
• Dynamic cell
—Simpler to build, smaller
—More dense
—Less expensive
—Needs refresh
—Larger memory units
• Static
—Faster
—Cache
Read Only Memory (ROM)

• Permanent storage
—Nonvolatile
• Microprogramming (see later)
• Library subroutines
• Systems programs (BIOS)
• Function tables
Types of ROM

• Written during manufacture


—Very expensive for small runs
• Programmable (once)
—PROM
—Needs special equipment to program
• Read “mostly”
—Erasable Programmable (EPROM)
– Erased by UV
—Electrically Erasable (EEPROM)
– Takes much longer to write than read
—Flash memory
Organisation in detail

• A 16Mbit chip can be organised as 1M of


16 bit words
• A bit per chip system has 16 lots of 1Mbit
chip with bit 1 of each word in chip 1 and
so on
• A 16Mbit chip can be organised as a 2048
x 2048 x 4bit array
—Reduces number of address pins
– Multiplex row address and column address
– 11 pins to address (211=2048)
– Adding one more pin doubles range of values so x4
Refreshing

• Refresh circuit included on chip


• Disable chip
• Count through rows
• Read & Write back
• Takes time
• Slows down apparent performance
Typical 16 Mb DRAM (4M x 4)
Packaging
256kByte Module
Organisation
1MByte Module Organisation
Interleaved Memory

• Collection of DRAM chips


• Grouped into memory bank
• Banks independently service read or write
requests
• K banks can service k requests
simultaneously
Error Correction

• Hard Failure
—Permanent defect
• Soft Error
—Random, non-destructive
—No permanent damage to memory
• Detected using Hamming error correcting
code
Error Correcting Code Function
Advanced DRAM Organization

• Basic DRAM same since first RAM chips


• Enhanced DRAM
—Contains small SRAM as well
—SRAM holds last line read (c.f. Cache!)
• Cache DRAM
—Larger SRAM component
—Use as cache or serial buffer
Synchronous DRAM (SDRAM)

• Access is synchronized with an external clock


• Address is presented to RAM
• RAM finds data (CPU waits in conventional DRAM)
• Since SDRAM moves data in time with system
clock, CPU knows when data will be ready
• CPU does not have to wait, it can do something
else
• Burst mode allows SDRAM to set up stream of
data and fire it out in block
• DDR-SDRAM sends data twice per clock cycle
(leading & trailing edge)
SDRAM
SDRAM Read Timing
RAMBUS

• Adopted by Intel for Pentium & Itanium


• Main competitor to SDRAM
• Vertical package – all pins on one side
• Data exchange over 28 wires < cm long
• Bus addresses up to 320 RDRAM chips at
1.6Gbps
• Asynchronous block protocol
—480ns access time
—Then 1.6 Gbps
RAMBUS Diagram
DDR SDRAM

• SDRAM can only send data once per clock


• Double-data-rate SDRAM can send data
twice per clock cycle
—Rising edge and falling edge
DDR SDRAM
Read Timing
Simplified DRAM Read Timing
Cache DRAM

• Mitsubishi
• Integrates small SRAM cache (16 kb) onto
generic DRAM chip
• Used as true cache
—64-bit lines
—Effective for ordinary random access
• To support serial access of block of data
—E.g. refresh bit-mapped screen
– CDRAM can prefetch data from DRAM into SRAM
buffer
– Subsequent accesses solely to SRAM
Reading

• The RAM Guide


• RDRAM

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