Electronic Devices

Final Term
Lecture - 07

Reference book:
Electronic Devices and Circuit Theory (Chapter-7)
Robert L. Boylestad and L. Nashelsky , (11th Edition)

Faculty of Engineering
American International University-Bangladesh
 SELF-BIAS EXAMPLE Contd.
• Plot ID vs VGS and draw a line from the origin of the axis.
VGS  I D RS

Faculty of Engineering
American International University-Bangladesh
SELF-BIAS EXAMPLE Contd.
• Plot the transfer curve using IDSS and VP using shorthand method:

VGS ID

0 IDSS

0.3VP IDSS/2

0.5VP IDSS/4

VP 0mA

Faculty of Engineering
American International University-Bangladesh
SELF-BIAS EXAMPLE Contd.
• Superimpose the load line on top of the transfer curve:

Faculty of Engineering
American International University-Bangladesh
SELF-BIAS EXAMPLE Contd

• Determine VGSQ, IDQ,VDS,VS,VG and VD.

VGS  I D RS
VDS VDD  I D ( RS  RD )

Faculty of Engineering
American International University-Bangladesh
JFET: VOLTAGE-DIVIDER BIAS
• The source VDD was separated into two equivalent sources to permit a further
separation of the input and output regions of the network.
• Since IG = 0A, Kirchoff’s current law requires that IR1= IR2 and the series equivalent
circuit appearing to the left of the figure can be used to find the level of VG.

Faculty of Engineering
American International University-Bangladesh
VOLTAGE-DIVIDER BIAS
• VG can be found using the voltage divider rule:
RV
VG  2 DD
R1  R2
• Using Kirchoff’s Law on the input loop:
VD VDD  I D RD VDS VDD  I D ( RD  RS )

VS  I D RS VGS VG  I D RS
• Rearranging and using ID =IS:
V DD
I R1  I R 2 
R1  R2

• Again the Q point needs to be established by plotting

a line that intersects the transfer curve.

Faculty of Engineering
American International University-Bangladesh
 VOLTAGE-DIVIDER BIAS
• Graphical Approach ( to find VGSQ and IDQ):
• Plot a line for:
» VGS = VG when ID = 0A
» VGS = 0V when ID = VG/RS.
• Plot the transfer curve using IDSS and VP using shorthand method.
• The Q-point is located at the intersection.

VGS ID
0 IDSS
0.3VP IDSS/2 VGS VG  I D RS
0.5VP IDSS/4
VP 0mA

Faculty of Engineering
American International University-Bangladesh
 EFFECT OF INCREASING VALUES OF RS

Faculty of Engineering
American International University-Bangladesh
 JFET: VOLTAGE-DIVIDER BIAS EXAMPLE
• Determine IDQ, VGSQ, VD, VS, VDS and VDG.

R2VDD
VG  VGS VG  I D RS
R1  R2

VDS VDD  I D ( RD  RS )

VGSQ  1.8V I DQ 2.4mA

VD 10.24V VS 3.6V

VDS 6.64V VDG 8.24V

Faculty of Engineering
American International University-Bangladesh
VOLTAGE-DIVIDER BIAS EXAMPLE Contd.
• Graphical Approach ( to find VGSQ and IDQ):
• Plot a line for:
» VGS = VG when ID = 0A
» VGS = 0V when ID = VG/RS.
• Plot the transfer curve using IDSS and VP
using shorthand method.
• Identify the Q-point.
VS  I D RS
R2VDD
VG 
R1  R2
VDS VDD  I D ( RD  RS )
VGS VG  I D RS VDS VD  VS
VD VDD  I D RD VDG VD  VG

Faculty of Engineering
American International University-Bangladesh
VOLTAGE-DIVIDER BIAS EXAMPLE Contd.

Faculty of Engineering
American International University-Bangladesh
D-MOSFET SELF-BIAS
• D-MOSFET bias circuits are similar to
JFETs.

• The only difference is that D-MOSFETs can

operate with positive values of VGS and with
ID values that exceed IDSS.

I G 0 A I D I S

VGS 2
ID IDSS (1 )
VP

Faculty of Engineering
American International University-Bangladesh
 D-MOSFET SELF-BIAS

• Graphical Approach (to find VGSQ and IDQ):

• Plot the transfer curve using IDSS and VP using

shorthand method.

• Plot ID vs VGS using VGS = -IDRS.

• Take a positive value of VGS and find the ID value using

VGS 2
ID IDSS (1 )
VP
• The Q-point is located at the intersection.

Faculty of Engineering
American International University-Bangladesh
D-MOSFET SELF-BIAS EXAMPLE

• Determine the IDQ, VGSQ and VD.

• Graphical Approach (to find VGSQ and IDQ):

• Plot the transfer curve using IDSS and VP

using shorthand method.

• Take a positive value of VGS and find the ID

value using
VGS 2
ID IDSS (1 )
VP

• Plot ID vs VGS using VGS = -IDRS.

• Identify the intersection Q-point.

Faculty of Engineering
American International University-Bangladesh
D-MOSFET SELF-BIAS EXAMPLE

VD VDD  I D RD VGS 2
ID IDSS (1 )
VP
VGSQ = -4.3 V

IDQ = 1.7 mA
VGS
ID 
VD = 9.46 V RS

Faculty of Engineering
American International University-Bangladesh
D-MOSFET VOLTAGE-DIVIDER BIAS

• D-MOSFET bias circuits are similar to JFETs.

I G 0 A I D I S

VGS 2
ID IDSS (1 )
VP

Faculty of Engineering
American International University-Bangladesh
D-MOSFET VOLTAGE-DIVIDER BIAS

• Graphical Approach (to find VGSQ and IDQ):

• Plot the transfer curve using IDSS and VP using

shorthand method.

• Take a positive value of VGS and find the ID value

using
VGS 2
ID IDSS (1 )
VP

• Plot ID vs VGS using VGS = VG - IDRS.

• The Q-point is located at the intersection.

Faculty of Engineering
American International University-Bangladesh
 End of
Lecture-7

Faculty of Engineering
American International University-Bangladesh