Chapter 4 Optical Detectors
Chapter 4 Optical Detectors
Computing
Department of
Electronics &
Communication
Engineering
Optics and Optical
Communications
ECE8405
By
•
4.4 Optical Detection Principle
• The conversion of an optical into an electrical signal requires
the absorption of the incident light.
• The absorption leads to an excitation of an electron from the
valence to the conduction band.
• What is left in the valence band is a vacancy, which we call a
“hole”.
• Therefore, we speak about the
photo-generation of electron-hole
pairs, because the absorption
always leads to the generation of a
hole and an electron. Photogeneration of an electron hole pair.
4.4.1 Principles of Photodiodes
• As a photon flux Φ penetrates into a semiconductor, it will be
absorbed as it progresses through the material.
Absorbed photons
trigger photocurrent
Ip in the external
circuitry
Examples of Photon Absorption
4.4.2 Quantum Efficiency
• The quantum efficiency η is the number of the electron–hole
carrier pairs generated per incident–absorbed photon of
energy hν and is given by
4.4.3 Materials for Photo detectors
Most commonly used material for photodetectors are
1. Silicon
Materials Operating
Wavelength
Silicon 400-1000 nm
Germanium 600-1600 nm
GaAs 800-1000 nm
InGaAs 1000- 1700 nm
InGAsP 1100-1600
(doping dependent)
4.5 Applications