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Unit 3

Unit 3 covers various types of sensors and transducers, including LVDT, piezoelectric transducers, and capacitive transducers. It discusses their principles of operation, advantages, limitations, and provides equations for calculating sensitivity and output. Additionally, it introduces the Hall effect and its application in measuring magnetic fields using Hall voltage.

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3 views

Unit 3

Unit 3 covers various types of sensors and transducers, including LVDT, piezoelectric transducers, and capacitive transducers. It discusses their principles of operation, advantages, limitations, and provides equations for calculating sensitivity and output. Additionally, it introduces the Hall effect and its application in measuring magnetic fields using Hall voltage.

Uploaded by

iamrahul8949
Copyright
© © All Rights Reserved
Available Formats
Download as PPT, PDF, TXT or read online on Scribd
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UNIT 3

Distance, Motion and


Position Sensors and
measurement
LVDT (Linear Variable Differential
Transformer)
LVDT Continue……….
16  fI p n p ns .2bx
3
x 2
V0  9
[1  2
]
10 ln( r0 / ri ).3w 2b

Where f = Excitation frequency


Ip = Excitation current, b = width of primary coil,
npns = no. of turns on primary & secondary coil
rori = outer & inner radii of coil
w = width of secondary coil, x = core
displacement
LVDT Continue……….
LVDT Advantages and
Limitation
 Advantages
 High range and Ruggedness
 Friction and Electrical Isolation
 Immunity from external effects
 High output and high sensitivity
 Disadvantages
 Sometimes affected by vibrations
 Sensitive to stray magnetic fields
 Large displacement for appreciable difference output
Piezoelectric Transducer
 Crystal material at rest: No forces applied,
so net current flow is 0
Crystal

+-+-+-

Current Meter
=0

Charges cancel +-+-+-


each other, so
no current flow
A pushing force: A pulling force:
(compression) (tension)
+ -
+ - + -

+ +
- -

- -
+ +
+
-
- Represents oxygen atom + Represents silicon atom
Piezoelectric Transducer
Continue……
 Crystal material with forces applied in
direction of arrows

Crystal

-----

Force

Current Meter
+++++
deflects in +
direction
Piezoelectric Transducer
Continue……
 Changing the direction of the applied force

Crystal

++++

Force
Current Meter
deflects in -
----- direction
 The magnitude and direction of charge induced
on the crystal is proportional to the magnitude
and direction of force
Q = KF ; K = charge sensitivity in C/N
As Y = stress/strain = (F/A)/(dt/t)
Or F = AYdt/t
Also as V = Q/C; C=capacitance between
electrode
And C = εrε0A/t
So V = KFt/εrε0A
Or V = g t p ; g = voltage sensitivity in Vm/N
g = K/εrε0
Types of Crystals
 Natural Crystals: Quartz, Tourmaline
 Low electrical leakage
 Work at high temperature
 Sustained shocks

 Synthetic Crystals: Rochelle salt, lithium


sulphate, ammonium dihydrogen phosphate (ADP),
Ethylene diamine tatrate
 1000 times more sensitive than natural crystal
 Exhibit much higher output for applied stress than natural
crystal
Piezoelectric Transducer
Continue……
 A quartz pressure transducer has sensitivity of 80 X 10 -12 C/bar. An
output voltage of 1.2V is produced when crystal is subjected to
pressure of 3.5 bar. Find the capacitance of the device.
 A force of 8N is impressed upon a piezoelectric crystal having
dimensions of 6mm X 6mm X 1.5mm thick. For crystal materials,
charge sensitivity is 140pC/N, permittivity is 12 X 10 -9 N/m and
modulus of elasticity is 11.5 X 106 N/m2. Calculate i) voltage
generated ii) capacitance and iii) strain induced in the crystal.
 A piezoelectric crystal having dimensions of 5mmX5mmX1.5mm &
a voltage sensitivity of 0.055V/N is used for force measurement.
Calculate the force if the voltage developed is 100V.
 A quartz crystal having a thickness of 2mm and a voltage
sensitivity of 0.05V-m/N is subjected to a pressure of 15X10 5 N/m2.
Calculate the voltage developed by the piezo-electric pick up. If
permittivity of quartz is 40.6X10 -12 F/m, calculate its charge
sensitivity.
Capacitive Transducer
 The capacitance of a parallel-plate
capacitor is given by

 o A
C
d
ε = dielectric constant
εo = 8.854 x 1o-12, in farad per meter
A = the area of the plate, in square
meter
d = the plate spacing in meters
Capacitive Transducer
Capacitive Transducers – Variable
Distance
C(x) = εA/x = εrε0A/x
where ε = dielectric const. or permittivity
εr = relative dielectric const.
ε0 = dielectric const. of vacuum
x = distance of the plates in m
A = effective area of the plates in m2

The sensitivity of capacitance to changes in plate


separation is:
S = dC/dx = -εrε0A/x2
Capacitive Transducer- Variable
Area
 As C = εrε0A/d
 C = εrε0(wx)/d
 where w = width
 x = length of overlapping part of the
plate
Capacitive transducers – Variable Area
As C = εrε0A/d
Also C = εrε0πr2 /2d
At an angle Ө
C = εrε0 Ө r2 /2d
Sensitivity
S = dC/dx = εrε0 r2/2d
THE HALL EFFECT
Lorentz Force:
F = q[E + (v x B)]

•Hall voltage is produced by charge accumulation on sidewalls


•Charge accumulation balances Lorentz Force
•Charge accumulation increases resistance
HALL VOLTAGE
For simple conductors

 IB IB
VH  R H
ned d
Where n = carrier density, d = conductor length
• RH is known as the Hall coefficient

• V
H α B  Useful for measuring B-Fields

Gaussmeter Probe uses


a hall sensor
2 / 40
End of UNIT 3

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