The document discusses diode approximations, which are mathematical methods used to analyze the nonlinear behavior of diodes in circuits. It outlines three types of approximations: the first treats the diode as a closed switch with zero voltage drop, the second incorporates a forward voltage of 0.7V for silicon diodes, and the third includes both the diode voltage and bulk resistance. The third approximation is deemed the most accurate, as it accounts for the non-ideal behavior of diodes in practical applications.
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Diode Approxiation
The document discusses diode approximations, which are mathematical methods used to analyze the nonlinear behavior of diodes in circuits. It outlines three types of approximations: the first treats the diode as a closed switch with zero voltage drop, the second incorporates a forward voltage of 0.7V for silicon diodes, and the third includes both the diode voltage and bulk resistance. The third approximation is deemed the most accurate, as it accounts for the non-ideal behavior of diodes in practical applications.
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Diode
Approximation Dr. Subhanarayan Sahoo Associate Professor FEST,ADANI UNIVERSITY Diode Approximation
• Diodes are mainly unidirectional devices.
• It offers low resistance when a forward or positive voltage is applied and has high resistance when the diode is reverse biased. • An ideal diode has zero forward resistance and zero voltage drop. The diode offers high reverse resistance, resulting in zero reverse currents. Though ideal diodes do not exist, near-ideal diodes are used in some applications. What is Diode Approximation?
• Diode approximation is a mathematical method used to
approximate the nonlinear behavior of real diodes to enable calculations and circuit analysis. • There are three different approximations used to analyze the diode circuits. • Diode Approximations are how the Diodes present in the circuit gets analyzed. First Diode Approximation • In the first approximation method, the diode is considered as a forward- biased diode and as a closed switch with zero voltage drop. • It is not to use in real-life circumstances but used only for general approximations where preciseness is not required. Generally in the theoretical analysis, we can use this concept but practically this situation is impossible. Second Diode Approximation • the diode is considered as a forward-biased diode in series with a battery to turn on the device. For a silicon diode to turn on, it needs 0.7V. A voltage of 0.7V or greater is fed to turn on the forward-biased diode. The diode turns off if the voltage is less than 0.7V. the Diode can be made to function as a switch by applying the cut-off voltages. For example, if the silicon is the semiconductor material used. Then in this case, if the voltage applied exceeds 0.7 volts the Diode is in ON mode. If it is below the minimum voltage then the diode is in OFF mode. Therefore, in this way diode acts as a switch. The second approximation adds the effect of the forward voltage. Vknee is the “turn-on” potential required to overcome the energy hill. It would be 0.7 volts for a silicon device. Third Diode Approximation • The third approximation of a diode includes voltage across the diode and voltage across bulk resistance, RB. The bulk resistance is low, such as less than 1 ohm and always less than 10 ohms. • The bulk resistance, RB corresponds to the resistance of p and n materials. This resistance changes based on the amount of forwarding voltage and the current flowing through the diode at any given time. • In this approximation, the cut-off voltage along with some Internal Resistance across the Diode is observed. This condition exists in the practical application in the design of circuits. This type of resistance can be referred to as Bulk Resistance. It is dependent upon the amount of the Forward • The third approximation is the most accurate of the three. • once the knee voltage is reached, the curve does not transition to a perfect vertical line. • Instead, there remains some positive, non-infinite slope. That is, the voltage continues to increase, although modestly, with further increases in current. • We can approximate this effect as a small resistive value, Rbulk. The voltage drop across the diode is calculated using the formula Vd = 0.7V + Id *RB Look at both of the circuits and calculate using the third approximation method of diode For fig (a) Adding 1kΩ resistor with bulk resistor 0.2Ω doesn’t make any difference in current flowing ID = 9.3/1000.2= 0.0093 A If we don’t count 0.2Ω, then ID = 9.3/1000=0.0093 A For fig (b) For load resistance of 5Ω, ignoring bulk resistance of 0.2Ω brings a difference in current flow. Therefore, bulk resistance has to be considered and the correct value of current is 1.7885 A. ID=9.3/5.2=1.75885 A If we don’t count 0.2Ω, then ID=9.3/5=1.86 A Summarizing, if the load resistance is small, the bulk resistance is taken into effect. However, if the load resistance is very high (ranging to several kilo- ohms), then bulk resistance has no effect on the current. Assume the voltage source is 12 volts and the resistor is 2 kΩ. Further, assume the diode is silicon and its bulk resistance is 10 Ω. Using the three diode approximations, compute the circulating current.
Using the first approximation:
Here we assume the diode is a closed switch. Consequently all of the source voltage must drop across the single resistor. • Determine the circulating current for the circuit in Figure