BI-POLAR

JUNCTION
TRANSISTOR
(BJT)
Construction and Symbol

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 BJT
 The base is very thin, about 1/150
 The word bipolar refers to the "two" part of the transistor's total width.
charged carries, the n-carriers  Normally, it is the base that controls
(electrons) and p-carriers (holes) that the amount of current flow between
are used in the operation of the emitter and collector.
transistors.  Transistor operation can be viewed as;
 The base is always a different type of
material compared to both collector o The emitter "emits" charged
and emitter.
 Although the emitter and collector are carriers or current (it is the
source of current).
made of the same material, they are
not interchangeable, because they o The collector "collects" the
differ in the level of doping. charged carriers emitted by the
 The emitter is heavily doped emitter (it is the current drain).
compared to collector and therefore o The amount of charged carriers
has a lot of charged carriers, or current that is emitted by the
(electrons if n-type, holes if p-type). emitter and collected by the
collector is controlled at the
base. 3
THE STATES/REGIONS OF OPERATION AND
PROPER BIASING OF BIPOIAR TRANSISTORS
Since a-transistor has two junctions, (B-C and B-E), there are four
(22) possible combinations of biasing the junctions.
Base-Emitter Base- Transistor Common
Junction Collector Operation Application
Junction
Forward Reverse Active Amplifier
Forward Forward Saturation Switching
Reverse Reverse Cut-off Switching
Reverse Forward Cut-off Switching
CHARACTERTSTIC CURVE (TYPICAL)

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BJT
 BJT has two junctions, the base-emitter (B-E) junction and the base-collector (B-
C) junction

 The operating mode of BJT depends on how the two junctions are supplied or
biased.

 BJT has three operating modes; these modes if referred to its characteristic
curve are called regions of operations, they are:

 Cut-mode / cut-off region

 Saturation mode / saturation region
 Active mode / active region

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Transistor at cut-off or "OFF":

The emitter is unable to emit charged carriers or

currents. (B-E junction is reverse biased)
There is no current flow from emitter to collector.
(Except for leakage current, Ic = Icso)
The voltage across collector-emitter, VCE is
maximum. (Approximately equal to supply voltage)
-The resistance between collector and emitter is
very high. (Ideally infinite)

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Transistor at saturation or
"ON":

The emitter is able to emit maximum charged

carriers or currents. (B-E & B-C junctions are forward
biased)
Maximum current flow from emitter to collector. (Ic
= Imax)
The voltage across collector-emitter is minimum.
(Ideally zero, VCE = VCEsat)
The resistance between collector and emitter is very
low. (Ideally zero)

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Transistor at active:

The emitter is able to emit charged carriers or

currents. (B-E forward, B-C reverse biased)
Moderate current flow from emitter to collector.
Moderate voltage across collector-emitter.
Moderate resistance between collector and emitter.

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DC ANALYSIS

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IMPORTANT PARAMETER
EQUATIONS
∝ (Alpha) - Common base amplification factor. It is
the ratio of the collector current change to the
change in emitter current, assuming that the
collector base voltage is constant. Alpha ranges from
0.9 to 0.999.

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IMPORTANT PARAMETER
EQUATIONS
β (Beta) - Common emitter forward current
amplification. It is the ratio of change in collector
current to the base current. Beta ranges from 20 to
500'

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IMPORTANT PARAMETER
EQUATIONS
γ (Gamma) - Common collector forward current
amplification factor. It is the ratio of change in
emitter current to the base current. (γ is not
commonly used)

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 RELATION BETWEEN ∝ AND β
From the circuit above,
IE = IB + IC + ICBO

Note: ICBO is the leakage current and is often ignored.

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RELATION BETWEEN γ AND β
IE = γ IB
IB + IC = γ IB
γ = IB/ IB + IC/ IB
γ=1+β

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 AC ANALYSIS (SMALL SIGNAL)
Hybrid Parameter model or h-parameter
model – the most commonly used equivalent AC
circuit for small signal analysis.

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From the input and the
output we can have the
following equations:

When the output is short

circuited, Vo = 0. We
have from equation (1),

And from equation (2),

When the input is open

circuited, Ii= 0. We have
from equation (1),

And from equation (2),

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Subscript notation for h-parameter
model
Subscript Meaning
i Input parameter
r Reverses parameter
f Forward parameter
o Output parameter
e Common emitter
b Common base
c Common collector

● For common emitter: hie , hre , hfe , hoe

● For common base: hib , hrb , hfb , hob
● For common collector: hic , hrc , hfc , hoc

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 Approximate h Parameter model
In most transistors, the reverse transfer voltage ratio hr, and output
conductance ho are very small and are usually neglected in most
practical applications. So, an approximate equivalent circuit is used
as shown below:

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Dynamic model or re model (Dynamic ac
resistance)

re is usually very high, and in most practical applications it is

considered an open circuit.

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THE THREE TRANSISTOR CONFIGURATIONS
1. Common Base Configuration

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THE THREE TRANSISTOR CONFIGURATIONS
2. Common Emitter Configuration

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THE THREE TRANSISTOR CONFIGURATIONS
3. Common Collector Configuration (Emitter
Follower)

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 Most amplifiers use common-emitter configuration.
 Common-base (CB) and common-collector (CC) are used for
impedance matching;
 From LOW to HIGH impedance, use CB.
 From HIGH to LOW impedance use CC. (Most common)
 Most audio Power Amplifiers usually has a CC output stage,
that is to match its output impedance to the loud speaker.

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AC Equivalent Circuit (Used in small signal
analysis)

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AC Equivalent Circuit (Used in small signal
analysis)

From re -moder and h-parameter evaluation.

Input impedance or resistance:
re hib
re hie hic

Amplification Factor:
hfb
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 Typical values of h-parameters
h-parameter CB CE CC
hi 20Ω 1k Ω 1k Ω
hr 3 x 10-4 2.5 x 10-4 1
hf -0.98 50 -50
ho 0.5uS 25uS 25uS

COMPARISON BETWEEN THE THREE-TRANSISTOR

CONFIGURATIONS
Parameter CB CE CC
Input impedance (Zi) Low Moderate High
Output impedance (Zo) High Moderate Low
Current Gain (Ai) Low (1) Moderate High
Voltage Gain (AV) High Moderate Low (1)
Power Gain (Ap) Moderate High Low
Phase Shift None 180° None
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COMMON TYPES OF
BIASING

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COMMON TYPES OF
BIASING

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 Biasing - is the application of DC potential for the transistor to
operate.
 Comparison between the common types of biasing:
 The two most common concerns regarding the effects of biasing
are power gain and stability.
 Fixed-bias has the highest power gain but the most unstable.
 Emitter-stabilized is more stable than fixed-bias but with lesser
gain.
 Voltage divider is considered to be the most stable, -(although
voltage feedback attains almost same stability) but relatively has
a lower gain.
 Voltage feedback has the advantage of having less number - of
resistor used (three) compared to voltage divider (four) without
sacrificing much stability.
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TRANSISTOR CIRCUIT STABILITY

 Transistor circuit stability means how a transistor circuit

maintains its operating point or quiescent (Q)-point
 The major factor that affects the stability of a transistor circuit is
the change of operating temperature.
 Variation of temperature affects the following transistor
parameters:
- β it increases with increase in temperature
- VBE , decreases with increase in temperature
- - Ico, increases with increase in temperature.
 The lower the value of stability factor, the more stable the circuit
is.
 An ideally stable circuit has a stability factor of zero.
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 TRANSISTOR CIRCUIT STABILITY

Total change of collector current ∆Ic due to stability

factors:

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TRANSISTOR CIRCUIT STABILITY
The lower the stability factor, the smaller is the collector current
change as temperature changes or the less sensitive the circuit to
temperature changes and therefore the better.

Transistor Model Comparisons

Model Common Usage
T-equivalent circuit Considered as the transistors
physical representation
Ebers-Moli model Used in DC analysis
Hybrid Model Used in small signal analysis
Hybrid-pi model or Giacolleto Used in high frequency
model analysis
Dynamic or re model Used in small signal and large
signal analysis.

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Thanks!

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