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Research Assignment

The document presents an assignment on the design of a wideband Low Noise Amplifier (LNA) focusing on low noise figure, minimal power consumption, and high signal gain. It reviews six research papers detailing various methodologies and results related to wideband LNA designs using different technologies and topologies. The findings highlight the merits of higher gain and reduced noise, while also noting limitations such as instability and higher power consumption in certain designs.

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2 views

Research Assignment

The document presents an assignment on the design of a wideband Low Noise Amplifier (LNA) focusing on low noise figure, minimal power consumption, and high signal gain. It reviews six research papers detailing various methodologies and results related to wideband LNA designs using different technologies and topologies. The findings highlight the merits of higher gain and reduced noise, while also noting limitations such as instability and higher power consumption in certain designs.

Uploaded by

jane.grace19
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PPTX, PDF, TXT or read online on Scribd
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ENGINEERING RESEARCH METHODOLOGY

ASSIGNMENT

Registration No. Name


E229-01-0080/2025 Esther Muraguri
E029-01-0099/2025 Jane Grace

Tuesday, 25th March 2025


DEDANK GY
IMATHI T Y OF TECH NOLO
UN IVERS
I

Dedan Kimathi
University of
Technology
Introduction

• The following papers focus on the design of a wideband Low Noise Amplifier with a
low noise figure, minimal power consumption and a high signal gain.
• A wideband LNA is mainly used when amplifying weak signals across a broad
frequency range with minimal noise reduction which tends to be difficult especially at
high frequencies.
Introduction

• The following papers address that issue


1. F.L, Z.Youming, Y.Cao, and F.H "A Wideband Low-Noise Amplifier in 0.13-μm CMOS," 2022 The
7th International Conference on Integrated Circuits and Microsystem.
2. Zhaoyu Zhang, Lingxin Chu, Guanchao Sheng "A 24-27 GHz wideband LNA in 40nm RF CMOS
Technology,“ 2024 IEEE 12th Asia-Pacific Conference on Antennas and Propagation (APCAP) .
3. Mahmou, R. and Faitah, K. “Design of a Low Power Low-Noise Amplifier with Improved Gain/
Noise Ratio.” 2024 World Journal of Engineering and Technology.
4. Xuan X, Cheng Z, Gong T, Zhang Z, Le C “An ultra-wideband current-reused LNA MMIC with
negative feedback and adaptive bias networks.” 2024 International Journal of Microwave and
Wireless Technologies .
5. Zhi-Jian Chen, Yang Li, Honglin Zhang, “A wide-band Low-Noise Amplifier with 0.537-0.677dB
Noise Figure” 2022 International Conference on Microwave and Millimeter Wave Technology
(ICMMT).
6. Lei Wang and Yu Jian Cheng "A 2–20-GHz Ultrawideband High-Gain Low-Noise Amplifier With
Enhanced Stability,“ IEEE Microwave And Wireless Technology Letters, Vol. 34, No. 4, April 2024.
Methodology

Paper I
• Has a wideband of 7 to 18 GHz.
• Uses 130nm CMOS technology.
• The topology used is the shunt series together with a three stage amplifier to increase
gain, low noise and get the desired wideband.

Paper 2
• Has a wideband of 24 to 27GHz. Operating at very high frequencies.
• Uses 40 nm CMOS technology.
• The topology used is the two stage common source current reuse to achieve gain, low
noise and low power.
Methodology

Paper 3
• Has a wideband of 0.5 to 6 GHz.
• Uses 65nm CMOS technology.
• The topology used inductive degeneration to a simple cascode LNA circuit to increase
gain and get low noise.

Paper 4
• Has a wideband of 2 to 18GHz.
• Uses 15nm Gallium Nitride Arsenide Pseudomorphic high electron mobility transistor
process.
• The topology used is the two stage common source current reuse to achieve gain, low
noise and low power.
Methodology

Paper 5
• Has a wideband of 21 to 36 GHz. Operated at very High frequencies.
• Uses 100nm CMOS Gallium Nitride on Silicon Process .
• The topology used is a hybrid structure of a common source and a cascode amplifier.

Paper 6
• Has a wideband of 2 to 20GHz. Highest range
• Uses 90nm Gallium Nitride Arsenide Pseudomorphic high electron mobility transistor
process.
• The topology used is a low pass matching network featuring a series inductor and a
parallel capacitor between the common source and the common gate to achieve gain,
low noise and low power.
Results

Paper 1
• High frequencies of bandwidth 7-18 GHz
• Gain flatness of 22±0.5dB
• Return loss(S11) is less than -9.6dB
• Noise figure(NF) of 2.29-2.7dB
• Power of 21.6mW at 1.2V

Paper 2
• High frequencies of above 20GHz
• Return loss of below -10dB or frequencies between 24-27GHz
• Gain of 12dB
• Noise factor of 5.1dB
• Power of 35.5mW
Results

Paper 3
• Smaller frequency but higher wide-band of 0.5-6GHz
• Gain of 16dB
• Noise figure(NF) of 1.1dB
• Low Power of 3mW at 1.8V

Paper 4
• Higher wide-band 2-18GHz
• Gain of 17B
• Noise factor of 3dB
• Power of 220mW at 5V
Results

Paper 5
• Higher frequencies of 21-36GHz
• Gain of 28.3-30dB
• Noise figure(NF) of 0.537-0.677dB
• Low Power of 3mW at 1.8V
• Return loss(S11) is better than -10dB
• Stability factor greater than 1

Paper 6
• Higher wide-band 2-20GHz
• Gain of 25dB
• Noise factor of below 1.5dB
• Power of 335mW
• Return loss(S11) is better than 10dB
Merits and Limitations

Merits in all the papers


• Higher gain
• Good noise factor
• Good linearity
• Reduced noise
• Higher operating frequency
• Better stability
• Reduced power consumption in some
• Reduced complexity of system in some designs(paper 1)
Limitations
• Instability at high frequencies in paper 3
• Higher power consumption in paper 4 and 6
THANK
YOU
Private Bag- Dedan kimathi, Nyeri-
Mweiga road
DEDANK Y
IMATHI T Y OF TECH NOLOG

Telephone: +254-061
UN IVERSI

Dedan Kimathi 2050000 Email:


University of
Technology [email protected]
Website:
www.dkut.ac.ke

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