Project Review-2

on

Electrical Performance Analysis of

Organic Thin Film Transistor in
Enhancement and Depletion Mode
By

Ishita Allada (RA2111004010455)

Nupur Chatterjee (RA2111004010126)
Bagmita Dutta (RA2111004010268)

Under the guidance of

Dr. Rajesh Agarwal

Associate Professor, Department of ECE
 Index
1. Introduction
2. Literature survey
3. SDG 9 – Industry, Innovation, and Infrastructure
4. Importance of Enhancement and Depletion Modes in OTFT
5. Novelty
6. Problem Statement and Objective
7. Learning and Development Journey
8. Realistic constraints
9. Engineering Standards
10. Software Details
11. Video of the project
12. Project timeline
13. Paper Acceptance Proof
14. References
 Introduction
Organic Electronics uses carbon-based materials to create lightweight, flexible, and low-cost
devices like OLEDs, OTFTs, and organic solar cells. These materials enable innovative applications in
flexible displays, wearable devices, sensors, and renewable energy systems, offering sustainable
alternatives to traditional electronics with simpler manufacturing processes and environmental benefits.

Fig 1. Applications of Organic Electronics

Source: Chemistry World, Google
 Advantages of Organic Semiconductors Over
Inorganic Semiconductors
Organic semiconductors are gaining attention in the electronics industry
due to several key advantages that differentiate them from traditional
inorganic semiconductors.
Here are the primary reasons why :
1. Flexibility and Mechanical Strength
• Deformability: Organic semiconductors can be deposited on flexible substrates, enabling the creation of
bendable and foldable devices, which is not feasible with rigid inorganic materials
2. Ease of Fabrication
• Low Temperature Processing: They can be processed at lower temperatures, allowing for the use of
flexible plastic substrates instead of rigid silicon wafers, further broadening their application potential
3. Cost-Effectiveness
• Reduced Manufacturing Costs: The simpler fabrication methods contribute to lower overall production
costs, making organic semiconductors attractive for large-scale applications like displays and solar cells
 Applications of Organic Electronics
⚬ Flexible Displays
⚬ Wearable Electronics
⚬ Flexible Sensors
⚬ Smart Cards and RFID
⚬ Flexible Solar Cells Flexib
Organic
le
Electronics

⚬ Electronic Paper OTFT

⚬ Flexible Logic Circuits

⚬ Biocompatible Electronics
⚬ Organic Photodetectors
Source: Applications of organic Electornics, Resaerch Gate
Fig 4. Applications of OTFTs
 Literature Survey
S.
TITLE AUTHOR INFERENCE
No

Reviewed advancements in OTFTs,

High-Performance Organic Thin-Film focusing on mobility improvements (up to
Transistors: Principles and Strategies, Z. Hao, Z. Wu, S. Liu, X. Tang, J. 18 cm² V⁻¹ s⁻¹), low-voltage operation, and
1.
Journal of Materials Chen, X. Liu the impact of material and device
Chemistry C, 2024. engineering on performance for flexible
electronics.

Explored OTFT-based flexible biosensors

Flexible Organic Transistors for for wearable and portable electronics.
2. Biosensing: Devices and Applications, E. Song, J. Song, W. Huang, J. Lee Discussed material innovations, device
Advanced Materials, 2024 engineering, and challenges in stability and
system integration for practical applications.

This comprehensive study explores the

potential of OTFTs in flexible and wearable
An Intensive Study on Organic Thin-Film
electronics, discussing material selection,
Transistors (OTFTs) for Future J. Ajayan, Sreejith S., Manikandan
device architecture, and fabrication
3 Flexible/Wearable Electronics Murugesan, V. Bharath
techniques. The findings highlight the
Applications, Sreenivasulu
importance of optimizing these factors to
Micro and Nanostructures, 2024.
enhance device performance and reliability
 Literature Survey
S.
TITLE AUTHOR INFERENCE
No

This study presents a strategy to achieve low-voltage operable,

Achieving Low-Voltage Operating high-mobility OTFTs by designing a multilayered gate
High-Mobility Organic Thin-Film Y. Zhang, L. Wang, M. dielectric. The optimized devices exhibit average and maximum
4.
Transistors, Li, X. Chen, J. Zhao mobilities of 5.62 and 6.74 cm²/V·s, respectively, at operating
Applied Physics Letters, 2023. voltages below −5 V. This approach fosters the development of
high-performance OTFTs suitable for low-power applications.

Channel Length-Dependent
This paper presents an analytical model to study the impact of
Performance Study of OTFT:
channel length variations on OTFT performance. The findings
Analytical Modeling and
5. M. Gupta, R. Kumar provide insights into optimizing channel length to achieve
Simulation
desired electrical characteristics, aiding in the design of high-
IEEE Transactions on Electron
performance OTFTs.
Devices, 2020.

Scott T. Keene, Tom P. The study focuses on improving the performance and stability of
Enhancement-Mode PEDOT:PSS A. van der Pol, Dante Organic Electrochemical Transistors (OECTs) by de-doping
Organic Electrochemical . Zakhidov, Christ H. L. PEDOT:PSS using amine-based molecular de-dopants. This
6. Transistors Using Molecular De- Weijtens,René A. J. method shifts the threshold voltage (Vth) to negative values,
Doping Janssen, Alberto reducing power consumption and improving stability. De-doping
Advanced Materials,2020 Salleo, and Yoeri van lowers the operating current by up to 20 times and ensures stable
 Literature Survey
S.
TITLE AUTHOR INFERENCE
No

Doped organic transistors Bjo¨rn Lu¨ssem , Max L. This study demonstrates that doping a thin pentacene layer at the gate
operatingin the inversion and Tietze , Hans Kleemann , oxide interface enables tunable and reproducible organic transistors.
7. depletion regime Christoph Ho bach, Johann Threshold voltage can be precisely controlled without compromising
Nature Communications, W. Bartha,Alexander ON/OFF ratio, subthreshold swing, or mobility. Doping is expected to
2013 Zakhidov & Karl Leo become a vital technology for designing integrated organic circuits.

Prospects and Limitations of Flexible organic transistors offer low-cost fabrication and versatility,
Organic Thin attracting global research. Comparative analyses of OTFT structures
B.K. Kaushik , Brijesh
FilmTransistors reveal top-contact designs outperform bottom-contact ones, with
8. Kumar ,Y.S. Negi , and
(OTFTs)Advances BGTC exhibiting superior functionality. Performance depends on
Poornima Mittal
Intelligent and Soft structure, material properties, and fabrication processes, impacting
Computing, 2012 speed and sensitivity.

The study demonstrates using crystalline mixed films of a-

Continuous Tuning of By Piero Cosseddu,* Jo ̈rn- sexithiophene (6T) and a,v-dihexylsexithiophene (DH6T) to tune
Organic Transistor Oliver Vogel, Beatrice charge carrier population and field-effect conductivity in OFETs.
9. Operationfrom Enhancement Fraboni, Jurgen P. Adjusting the DH6T-to-6T ratio modulates the threshold voltage (VT),
to Depletion Mode Rabe,Norbert Koch, and enabling both enhancement and depletion modes. DH6T, with alkyl
Advanced Materials,2009 Annalisa Bonfiglio* chains, enhances hole mobility, improving performance on rough
substrates and allowing for versatile applications on flexible substrates.
SUSTAINABLE DEVELOPMENT GOALS
SDG 9 – Industry, Innovation, and Infrastructure
 This research supports SDG 9 by advancing sustainable, energy-
efficient OTFT technology as an alternative to traditional
silicon-based transistors. Organic transistors, fabricated via low-
temperature, eco-friendly processes, enable flexible, low-power
electronics for wearables, IoT devices, and smart infrastructure.

 The study of enhancement and depletion-mode OTFTs enhances

circuit efficiency, reducing electronic waste and energy
consumption. Depletion-mode OTFTs, with their normally-ON
behavior, offer solutions for continuous low-power operation,
furthering sustainable innovation. By optimizing OTFT
performance, this research contributes to green electronics,
scalable manufacturing, and next-generation smart technologies,
fostering resilient and eco-conscious industrial growth.
 Problem Statement and Objective
The objective of this study is to systematically analyze and optimize the performance of Organic Thin Film
Transistors (OTFTs) in both enhancement and depletion modes. Specifically, the study aims to:

Investigate the Ids -Vgs and Ids- Vds Extract and analyse key performance Examine the influence of material

characteristics of the graphs to understand metrics such as threshold voltage (Vth), properties (e.g., mobility, trap density,

the device behaviour across different subthreshold swing, mobility, on/off and doping profiles), gate dielectric

operating regions current ratio, and contact resistance parameters, and interface effects on the
overall OTFT performance.

Fig 5. Schematic diagram of OTFT

Importance of Enhancement and Depletion Modes in OTFT
Studying enhancement-mode and depletion-mode organic thin-film transistors (OTFTs) is important
because of their distinct functionalities and wide-ranging applications in advanced electronics.

Enhancement-Mode OTFTs and Their Depletion-Mode OTFTs and Their

Applications Applications
Enhancement-mode Organic Thin-Film Transistors (OTFTs) Depletion-mode Organic Thin-Film Transistors (OTFTs) are
are normally OFF at zero gate voltage, making them ideal for normally ON at zero gate voltage, making them essential for
efficient switching and low power consumption. These analog circuits and load devices. These transistors provide
transistors are commonly found in digital electronics, such as stable current flow in applications like amplifiers and sensor
smartphones, tablets, and computers. interfaces, ensuring consistent performance without the need
for constant control signals.
Applications of Enhancement-Mode OTFTs:
• Digital Electronics Circuits Applications of Depletion-Mode OTFTs:
• High-Speed Switching • Analog Circuits
• Consumer Electronics • Signal Processing
• Smartphones and Tablets • Load Devices in Logic Circuits
• Sensor Technologies
• Wearable Devices
 Novelty
 This research provides a comprehensive comparative analysis of enhancement-mode and depletion-mode OTFTs, an
area with limited exploration in organic electronics.
 While enhancement-mode OTFTs are widely studied, depletion-mode OTFTs remain underutilized, despite their
normally-ON behavior, which is beneficial for low-power analog circuits and continuous-operation applications.
 By bridging this research gap, our work advances the understanding of depletion-mode OTFTs, enabling flexible,
energy-efficient organic transistors for next-generation electronic applications such as wearables, RFID tags, and low-
power circuits.

Fig 6. Novelty
Learning and Development Journey

Fig 7. OTFT development process

 Learning and Development Journey
The choice of device architecture is crucial for the performance of organic thin-film transistors
(OTFTs).
 While top-contact configurations work well with single-

crystal pentacene, they are less effective for polycrystalline

films commonly used in practical applications. Instead, a

bottom-gate, top-contact structure is preferred

 In this design, the gate electrode is located beneath the

semiconductor layer, while the source and drain electrodes

are placed on top. This arrangement not only improves

Figure 8. Materials used in OTFT scalability but also simplifies the fabrication process,

making it more suitable for commercial use.

 Learning and Development Journey
Table 1. Parameters that were considered for the simulations

Figure 9. Measurements used in OTFT

Learning and Development Journey

Figure 10. Structure of the OTFT

 Learning and Development Journey
 Efficient charge transport in organic thin-film transistors

Energy Band (OTFTs) relies heavily on the interaction at the interface

Diagram between the semiconductor and the electrodes.
 This interaction is influenced by how well the work function
of the electrodes aligns with the energy levels of the organic
semiconductor, particularly the highest occupied molecular
orbital (HOMO) and the lowest unoccupied molecular orbital
(LUMO).
 Gold (Au) is commonly used for source and drain electrodes
because its work function of about 4.9 eV closely matches the
HOMO level of pentacene, which is around 5.1 eV.

Figure 11. Energy band diagram  The small difference of 0.2 eV between these values
facilitates efficient hole injection into the pentacene layer,
promoting p-type behavior in the OTFT and ensuring smooth
charge flow at room temperature.
 Learning and Development Journey
DEPLETION MODE

Figure 12. Depletion mode Id-Vgs Graph (linear scale) Figure 13. Depletion mode Id-Vgs Graph (log scale)
 The simulated I ds -V gs curve of the model in depletion mode, as shown in Figure 12 and 13, exhibits key features
characteristic of p-channel depletion-mode behavior.
 At zero gate voltage (V gs = 0V), a substantial drain current (Ids) is observed, indicating that the transistor is
naturally in the ON state.
 As the gate voltage becomes more positive, the drain current decreases.
 Learning and Development Journey
ENHANCEMENT
MODE

Figure 14. Enhancement mode Id-Vgs Graph (linear scale) Figure 15. Enhancement mode Id-Vgs Graph (log scale)
 The simulated I ds -V gs curve of the model in enhancement mode, as shown in Figure 14 and 15, exhibits key features
characteristic of p-channel enhancement-mode behavior.
 At V g =50V and V g =120V, the positive gate bias depletes holes in the p-type channel, turning off the device effectively
thus highlighting strong gate control over channel conductivity.
 The enhancement-mode OTFT demonstrates efficient switching behavior, with no drain current at V gs = 0 V,
confirming its normally-off nature that requires gate bias to form a conductive channel.
 Learning and Development Journey
DRAIN
CHARACTERISTICS

Figure 16. Depletion mode Figure 17. Enhancement mode

In enhancement-mode OTFTs, Ids is negligible at V gs = 0 and increases as V gs surpasses V th , showing linear rise
at low V ds and saturation at high V ds . In depletion-mode OTFTs, Ids exists at V gs = 0 and decreases with
negative V gs
 Learning and Development Journey
PARAMETERS
These following parameters highlight effective gate control, strong charge carrier mobility, rapid
switching, and robust current modulation. Despite relatively high contact resistance, the device shows
strong potential for flexible, energy-efficient electronic applications.

3.
2. 4.

1.
5.
 Learning and Development Journey
Table 2. Extracted parameters from Simulation

Parameters Simulated
Values

Modes Depletion
Enhancement

Capacitance per unit area 7.79x10-8 F/cm2 7.79x10-8 F/cm2

Threshold Voltage 61.3 V 1.16V

Figure 18. Structure of OTFT

Mobility 0.505 cm /Vs
2
0.282 cm /Vs
2

Sub Threshold Swing 110 mV/decade 92 mV/decade

On/Off Current Ratio 1.603x1014 8.23x109

 Learning and Development Journey
WHAT ARE TRAPS?

Traps are localized defect states within the semiconductor material that capture charge carriers, reducing
mobility and performance. They can be shallow or deep, affecting device efficiency

Traps act as barriers to charge flow by capturing and

releasing carriers, leading to:
1. Delayed Conduction: Requires a higher gate voltage to
accumulate sufficient mobile carriers.
2. Reduced Mobility: Trapped charges scatter free carriers,
slowing transport.
3. Increased Subthreshold Swing: A larger voltage range is
needed for a transition between OFF and ON states.
Figure 18. Energy Band Diagram with Traps 4. Hysteresis in IV Characteristics: Delay in response due to
trapped charges.
 Learning and Development Journey
DEPLETION MODE WITH
5×10−2 TRAPS 100

Vds=-120V Vds=-120V
10−4
4×10−2

−2
10−8
3×10

Ids
10−12
Ids

−2
2×10

10−16
1×10−2

10−20
0
10−24
150 100 50 0 −50 −100 −150 150 100 50 0 −50 −100 −150
Vgs Vgs
Figure 19. Depletion mode Id-Vgs Graph Figure 20. Depletion mode Id-Vgs Graph
(linear scale) (log scale)

 In depletion-mode OTFTs, traps immobilize carriers, requiring higher positive voltage to deplete the channel
completely, unlike smooth depletion without traps.
 traps increase the threshold voltage from 61.3V to 65.3V due to the presence of trap density (N trap ) making it
harder to turn off the device. Therefore, the I D -V G curve shifts rightward, showing increased V th.
 Traps reduce mobility from 0.505 to 1.89×10 ⁻³ cm²/V·s, increasing transit time and flattening the I D -V G
curve, indicating slower transistor operation and reduced current at given voltages.
 Learning and Development Journey
ENHANCEMENT MODE WITH
6
Vds=-120V
TRAPS V =-120V 101
ds
10−1
5 10−3
10−5
4 10−7
10−9
3 10−11

Ids
Ids

10−13
2 10−15
10−17
1 10−19
10−21
0 10−23
10−25
150 100 50 0 −50 −100 −150 150 100 50 0 −50 −100 −150
Vgs Vgs
Figure 21. Enhancement mode Id-Vgs Graph Figure 22. Enhancement mode Id-Vgs Graph
(linear scale) (log scale)
 In enhancement-mode OTFTs, traps necessitate a larger negative gate voltage to fill trap states before carriers
can contribute to conduction, unlike smooth conduction at low negative V GS without traps.
 Traps increase the threshold voltage from 1.16V to 2.74V, as they must be filled first before conduction can
occur.
 Traps reduce the on/off current ratio from 8.23x10 9 to 1.31x10 9 by increasing leakage current, resulting in a
lower slope in the I D -V G curve due to higher OFF-state current.
 Learning and Development Journey
COMPARITIVE SUMMARY OF ENHANCEMENT AND DEPLETION MODE
PARAMETERS WITH AND WITHOUT TRAPS
With Traps Without Traps
Parameter
Depletion Mode Enhancement Mode Depletion Mode Enhancement Mode

Threshold Voltage (Vth) 65.3 2.74 61.3 1.16

Mobility (μ) cm²/V·s 1.89×10−3 0.2689 0.505 0.282

On/Off Ratio 5.14×1013 1.31×109 1.603×1014 8.23×109

Table 3. Parameters of enhancement and depletion modes with and without traps

 The presence of traps in OTFTs degrades device performance by increasing threshold voltage,
reducing mobility, and lowering the on/off current ratio. While depletion-mode OTFTs suffer from
higher conduction losses, enhancement-mode OTFTs face greater difficulty in turning ON due to
charge trapping effects.
 Learning and Development Journey
The device structure was developed using DeckBuild, a comprehensive platform for semiconductor device modeling and
simulation. TonyPlot was utilized to generate a detailed graphical representation of the simulations.

Distinct Modes: Depletion and enhancement-mode OTFTs exhibit

unique operational characteristics, making them suitable for different
applications in flexible electronics and switching circuits.

Depletion Mode Advantages: Offers symmetrical charging and

discharging time constants, enabling quicker operation, ideal for
continuous conduction applications.

Enhancement Mode Advantages: Better suited for low-power,

high-speed switching circuits, showcasing strong gate control and
performance potential.

Performance Optimization: Improving contact resistance and Figure 23. Enhancement and Depletion modes in contrast
charge mobility can enhance both modes, positioning them as promising
candidates for next-generation flexible and large-area electronic devices.
 Realistic Constrains
• Threshold Voltage Instability: Variations in Vth due to environmental factors (e.g., oxygen
exposure) can impact device reliability and operational consistency.
• Environmental Sensitivity: OTFTs are highly susceptible to doping effects from oxygen and
moisture, which can alter electrical properties such as mobility, I off, and Vth.
• Material Ionization Energy: Differences in ionization energy (IE) of organic materials influence
charge injection efficiency, requiring careful material selection for optimized performance.
• Charge Carrier Mobility: Mobility is affected by grain boundaries and doping levels, constraining
performance in high-speed or high-frequency applications.
• On-Off Current Ratio: Maintaining a high Ion/Ioff ratio is challenging due to parasitic effects, such as
trap-assisted conduction and leakage currents.
• Balancing electrical performance and mechanical compliance in organic semiconductors remains a significant
challenge
 Engineering Standards
- Material Selection: High mobility and stable semiconductors.

- Threshold Voltage Control: Stable performance through doping and architecture.

- Substrate Compatibility: Flexible substrates .

- Encapsulation: Protection against oxygen and moisture.

- Manufacturing Scalability: Cost-effective roll-to-roll processing.

- Performance Metrics: High on-off ratio, low voltage, stable charge transport.

- Thermal Stability: Reliable under varying thermal conditions.

- Environmental Adaptability: Consistent performance in diverse conditions.

- Durability Testing: Mechanical and electrical reliability ensured.

- Integration Readiness: Seamless integration with flexible electronics.

 Software Details

Fig 20. Logo of Silvaco Fig 21. Logo of ORIGIN Fig 22. Logo of Tonyplot

 SILVACO is a leading provider of TCAD (Technology Computer-Aided Design) tools used in semiconductor device

design. These tools simulate device behavior, allowing designers to optimize performance and reduce manufacturing
costs before fabrication, ensuring efficient front-end design and functionality verification.
 ATLAS is a powerful simulation tool from Silvaco that models and simulates the electrical and physical behavior of

semiconductor devices, including transistors and diodes, using both 2D and 3D models.
 ORIGIN is a used in device simulation for data analysis and visualization. DeckBuild is a graphical user interface

(GUI) designed for building simulation decks for the Silvaco simulation tools, particularly for ATLAS. TonyPlot 3D
is used for visualizing and analyzing the results of TCAD simulations, particularly for 3D data. It is often used in
conjunction with ATLAS to view the outputs of simulations in a 3D format.
Video of the project
Paper acceptance proof
 Project Timeline
Gantt Chart

TASKS December January February March April

Title Finalisation

Workplan/0th Review
Initial code and
implementation
Initial simulation

1st Review

Parameter extraction

2nd Review

Paper publication

Final Review
 References
1.O. Marinov and M. Jamal Deen, “Performance of Organic thin film transistors,” J. Vac. Sci. Technol. B. vol. 24, no. 4,
2006.
2.M. J. Deen, M. H. Kazemeini, and S. Holdcroft, “Contact effects and extraction of intrinsic parameters in poly (3-
alkylthiophene) P3AT thin film field-effect transistors,” J. Appl. Phys., vol. 103, no. 12, pp. 124 509 (1-7), Jun. 2008.
3.Y. Roichman and N. Tessler, “Analysis of polymer field field effect transistor,” Mat. Res. Soc. Symp. Proc. vol. 665, pp.
C. 7. 4. (1-6), 2001.
4.Brijesh Kumar, B. K. Kaushik, Y. S. Negi and poornima Mittal, “Polymeric Thin Film Transistor Characteristics and their
Applications: Prospects and Challenges,” Proc. IEEE Int. Conf. on Electrical and Computer Technology (ICETECT-2011),
Nagercoil (Kanyakumari), March 23-24, 2011.
5.H. Klauk, M. Halik, U. Zschieschang, G. Schmid and W. Radik, “High mobility polymer gate dielectric pentacene thin
film transistors,” J. Appl. Phys. vol. 92, no. 9, pp. 5259-63, Nov, 2002.
6.Jin Jang and S. H. Han, “High performance OTFT and its application,” Current Applied Physics, vol. 6S1, pp. e17-e21,
2006.
Internet Sources:
7. https://www.sciencedirect.com/journal/organic-electronics, https://www.researchgate.net/
8. https://www.nature.com/nmat, https://pubs.rsc.org/en/journals/journalissues/tc, https://ieeexplore.ieee.org
Thank You