19ECE499 Project Phase II

Final Presentation
Design and Simulation of a 2.4 GHz RF Power Amplifier using Keysight
ADS

Batch ID: TID 77

Team members: Mentor

BL.EN.U4ECE21089- M.Sampath Kumar Dr. R.V. Sanjika Devi
BL.EN.U4ECE21072- K. Pavan Kumar Asst. Professor (Sr. Gr.)
BL.EN.U4ECE21045- G. Kamal
MOTIVATION/PROBLEM STATEMENT
Problem statement
Design and simulate a 2.4 GHz RF Power Amplifier using Keysight ADS with an aim to achieve high efficiency, optimal gain, and
reliable operation, primarily for wireless communication applications.

Why it is important to solve this problem

•RF power amplifier (PA) design is a highly specialized area within electronics engineering, requiring expertise in high-
frequency circuit design, impedance matching, and thermal management.
•The complexity of RF PA design—from simulation to layout and potential fabrication—means that relatively few engineers undertake
end-to-end development in this field.
•In the Indian context, most engineers rely on pre-designed amplifier modules, with limited engagement in custom
RF PA design, especially at the academic level.
•Our project bridges this gap by providing hands-on experience in the comprehensive design process, enhancing our underst
-anding and skills in this specialized domain.

Applications
•Wireless Communication Systems, Broadcasting Equipment , Radar Systems

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OBJECTIVE
To design and simulate a 2.4 GHz RF Power Amplifier using Keysight ADS, aiming for:
•High efficiency , Stable gain , Optimized performance , And a practical understanding of end-to-end RF PA development

Sub Objectives
•Transistor Selection
Choose a suitable RF transistor based on gain, frequency, power, and availability
•Use a non-linear model for large signal simulation
• Q-Point Setup
Simulate DC Characteristics and find the Q Point
•Load-Pull Analysis
Use Smith Chart-based load-pull simulations
Find optimum load impedance for maximum power and efficiency
•Input & Output Matching Networks
Design matching circuits for maximum power transfer
Use microstrip lines, stubs, and S-parameters for design validation
•Simulation & Optimization
Tune component values iteratively to achieve desired performance in gain, efficiency, and stability
•Layout Design (ADS)
Create a realistic layout for fabrication
•Apply controlled impedance, RF grounding, and decoupling
•Fabrication Planning
Generate and verify Gerber files
Prepare for real-world fabrication and testing (partially achieved) 3
LITERATURE SURVEY
BASE PAPER: S. Lee and Y. -H. Jeong, "A high-efficiency class-E GaN HEMT power amplifier for
WCDMA applications," IEEE Microwave and Wireless Components Letters, vol. 17, no. 8, pp. 622–624, Aug. 2007,
doi: 10.1109/LMWC.2007.901803.]

OBJECTIVES: The paper aims to improve the efficiency and linearity of power amplifiers for wireless
communication systems. These amplifiers are critical for transmitting signals effectively while consuming less power.

METHODOLOGY:
• Developed a Class E amplifier with a transmission-line-based circuit to optimize performance.
• Used GaN HEMT transistors because they handle high power and frequencies efficiently.
• Replaced traditional components with short and open-circuit stubs for better result.
• Created mathematical equations to calculate and tune the circuit parameters.
• Simulated the design to ensure it worked as intended before building it.
• Built the circuit on a RO4350 substrate, which is suitable for high-frequency applications.
• Conducted real-world tests to measure efficiency, output power, and performance at various conditions.
• Adjusted design elements to improve results, ensuring the amplifier delivered high efficiency and stable
operation

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LITERATURE SURVEY
BASE PAPER: P. A. Atchike, J. Zbitou, A. E. Oualkadi, and P. Dherbécourt, "GaN HEMT power
amplifier design for 2.45 GHz wireless applications," SAIEE Africa Research Journal, vol. 114, no. 4, pp.
106–113, Dec. 2023, doi: 10.23919/SAIEE.2023.10319379

OBJECTIVES: This paper focuses on designing a high-efficiency class AB GaN HEMT power
amplifier for wireless communication systems operating at 2.45 GHz. The aim is to achieve a good balance
between linearity, efficiency, and gain.

METHODOLOGY:

• The authors utilize Cree’s CG2H40045F GaN HEMT for the power amplifier design, known for its high
breakdown voltage and efficiency.
• Microstrip line technology and Smith Chart tools are used for matching network design, with a focus on
achieving low reflection coefficients and high power-added efficiency (PAE).
• The amplifier is designed using Advanced Design System (ADS) software, with both schematic
simulations and electromagnetic co-simulations performed to optimize performance. Bias networks and
matching networks are carefully constructed to maintain stability and efficiency at the target frequency.

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LITERATURE SURVEY
BASE PAPER: M. Amiri, Y. Alekajbaf, and N. Mssoumi, "L-band power amplifier design with discrete
GaN transistor," in 2018 Iranian Conference on Electrical Engineering (ICEE), Mashhad, Iran, pp. 1–5, 2018

OBJECTIVES: The objective of this paper is to design and fabricate a solid-state high-power amplifier
operating in the L-band using a discrete GaN (Gallium Nitride) transistor. The amplifier is designed to deliver
an output power of more than 100 watts, which is suitable for applications in communication and radar
systems.

METHODOLOGY:
• The authors used Advanced Design System (ADS) software for the simulation and optimization of the input
and output matching networks of the GaN transistor. The design consists of a three-stage amplifier: a 0.5-
watt driver amplifier, a 10-watt mid-power amplifier, and a high-power amplifier based on an NXP GaN
transistor. A digital control board manages the bias sequencing circuits at the gate and drain terminals. The
matching networks were optimized using load pull and source pull simulations to achieve a wideband
performance between 1-2 GHz. The design included thermal management strategies, using a heat sink and a
fan for cooling

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LITERATURE SURVEY
BASE PAPER: S. Ilamaran, Z. Yusoff, and J. Sampe, "0.5 GHz–1.5 GHz bandwidth 10W GaN HEMT
RF power amplifier design," International Journal of Electrical and Computer Engineering, vol. 8, no. 3, pp.
1837–1843, Jun. 2018, doi: 10.11591/ijece.v8i3.pp1837-1843.

OBJECTIVES: The goal of this study was to design and simulate a wideband RF power amplifier (RF
PA) for wireless communication. The amplifier needed to achieve high efficiency and good performance over a
wide frequency range (0.5GHz to 1.5GHz) using a 10W GaN HEMT transistor.

METHODOLOGY:
• 1. Design Techniques:
• - Source-Pull and Load-Pull Simulations: These techniques were used to determine the best input and
output impedances for optimal performance.
• - Matching Networks: Designed using transmission lines to ensure efficiency and stability across the
frequency range.
• 2. Simulations:
• - Performed to optimize the amplifier's gain, output power, and efficiency.
• - Stability was verified to avoid performance issues.
• 3. Tools Used: ADS software (Advanced Design System).

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LITERATURE SURVEY
BASE PAPER: B. Liu, C. C. Boon, M. Mao, P. Choi, and T. Guo, "A 2.4–6 GHz broadband GaN power
amplifier for 802.11ax application," IEEE Transactions on Circuits and Systems I: Regular Papers, vol. 68, no. 6, pp.
2404–2417, Jun. 2021, doi: 10.1109/TCSI.2021.3073345.

OBJECTIVES: The main goal of this paper is to develop a broadband GaN power amplifier (PA) for dual-
band IEEE 802.11ax applications that cover both the 2.4 GHz and 5 GHz WLAN bands. The authors aim to achieve
high efficiency and power output across a broad frequency range while maintaining a compact design for practical
applications.

METHODOLOGY:
• The design incorporates three stages of amplification to achieve a power gain exceeding 30 dB.
• A novel inter-stage matching network using coupled resonators is proposed to extend the bandwidth up to 6
GHz.
• This new topology uses a combination of series inductors and capacitors to achieve additional complex poles,
enhancing the bandwidth.
• Advanced simulation tools like ADS (Advanced Design System) are employed for load-pull analysis to optimize
the design parameters.

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SUMMARY OF LITERATURE SURVEY
Title Problem Addressed Methodology/Tools used Final Outcomes Gaps identified

A High-Efficiency The paper addresses the Simulation software for The amplifier Measured Power Gain: 9.5
Transmission-Line GaN need for higher efficiency design testing.RO4350 achieved 70% dB at the operating
HEMT Class E Power and better linearity in substrate for circuit efficiency, stable frequency of 2.14 GHz
Amplifier power amplifiers while fabrication. Gan HEMT performance, and
reducing harmonic transistors for the compact design
distortion. It also focuses amplifier design. suitable for wireless
on creating a compact and communication
practical design for modern systems.
wireless communication
systems.

GaN HEMT Power The paper aims to design a It uses GaN HEMT The design achieved The design needs to be
Amplifier Design for 2.45 power amplifier for 2.45 transistors with high efficiency (48%) optimized for a wider
GHz Wireless Applications GHz wireless applications simulation methods in and good output frequency range and better
that is efficient, compact, ADS to improve power power (45 dBm), thermal stability
and has good heat performance and with better heat
management. minimize losses. management.

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SUMMARY OF LITERATURE SURVEY
Title Problem Addressed Methodology/Tools Final Outcomes Gaps identified
used
L-Band Power Amplifier Focuses on the design and Utilizes ADS Achieved over 100-watt The design complexity and
Design with Discrete fabrication of a high-power simulation for input output power with GaN heat management are
GaN Transistor L-band amplifier using and output matching technology, showing challenging, especially
GaN transistors for network optimization; improved efficiency and under high power
communication and radar GaN-based transistor power density. conditions; needs better
systems. is the main active thermal management
element. solutions.

0.5GHz - 1.5GHz The need for a wideband . Designed matching Designed an RF power Existing RF power
Bandwidth 10W GaN RF power amplifier with networks using amplifier with 15–17 dB amplifiers lacked wide
HEMT RF Power high efficiency for wireless transmission lines to gain over 0.5GHz–1.5GHz. bandwidth and high
Amplifier Design communication systems. ensure efficiency and Achieved 36% drain efficiency for frequencies
Challenges in managing stability. efficiency and 10W output between 0.5 and1.5GHz.
harmonic frequencies and Conducted power (40 dBm). Difficulty in handling
ensuring stability in simulations for gain, harmonic frequencies for
wideband designs efficiency, and wideband designs
stability in ADS
software.

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SUMMARY OF LITERATURE SURVEY

Title Problem Addressed Methodology/Tools Final Outcomes Gaps identified

used

A 2.46 GHz Broadband GaN The paper focuses on It uses GaN HEMT The amplifier achieved here is a need to further
Power Amplifier for designing a power technology and high efficiency (over 50%) balance efficiency and
802.11ax Application amplifier for Wi-Fi simulation tools and strong output power linearity across all
(802.11ax) that is (ADS) to optimize (40 dBm), with good operating conditions
more efficient and the amplifier for linearity for data
suitable for high data better power output transmission.
rates. and efficiency.

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PROJECT IDEA DESIGN FLOW:
PROJECT DESIGN
DC CHARACTERSTICS

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PROJECT DESIGN
EXPECTED V/S OBTAINED
DC CHARACTERSTICS RESULTS

Expected Obtained
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PROJECT DESIGN
LOAD-PULL ANALYSIS

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PROJECT DESIGN
OBTAINED OUTPUT LOAD-PULL ANALYSIS

• Gain_at_MaxPower :12.104 dB
• Z_In_at_MaxPower : 2.190 + j12.627
• Z_Ioad_at_MaxPower : 9.804 – j23.437
• Pdel_dBm_Max : 26.604 dBm

• Gain(dB) = Output Power(dBm) – Input Power(dBm)

• Gain(dB) = 26.604 dBm – 14.5 dBm
= 12.104 dB

• Pwatts​= 10^(PdBm−30/10)​​

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PROJECT DESIGN
EXPECTED OUTPUT LOAD-PULL ANALYSIS

Gain = 14db
Gain = 14db at
Pin 14dBm
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PROJECT DESIGN
MATCHING NETWORK DESIGN

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PROJECT DESIGN
MATCHING NETWRK DESIGN

I/P Matching Network O/P Matching Network

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PROJECT DESIGN
MATCHING NETWORK DESIGN

I/P Matching Network O/P Matching Network

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PROJECT DESIGN
MATCHING NETWORK DESIGN

BFQ790 TRANSISTOR

I/P Matching Network O/P Matching Network

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COMPLETE DESIGN

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SIMULATION RESULT
OBTAINED OUTPUT

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PROJECT DESIGN
LAYOUT DESIGN

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PROJECT DESIGN

CO SIMUALTION RESULTS OF LAYOUT DESIGN

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LAYOUT VS EVALUATION BOARD

LAYOUT EVALUATION BOARD

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CHALLENGES FACED

• Gerber File Export – Tool Compatibility Challenge

•While generating Gerber files from ADS layout, we encountered incompatibilities between ADS-generated
files and standard PCB fabrication tools.

•Specifically, certain pad outlines and via information were not exported correctly or were misaligned — a
known limitation in ADS when exporting for high-density RF layouts.

•Upon discussion with professional fabricators, we were advised to migrate the layout to KiCAD or Altium,
where Gerber generation is more fabrication-friendly and detailed.

•However, migrating the entire design and re-routing with precision for 2.4 GHz RF constraints would require
an additional 30+ days, due to:
• Revalidation of impedance traces
• Rechecking symbol and footprint compatibility
• Retuning for layout-specific parasitics

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CHALLENGES FACED

• Multi-Goal Simulation Optimization

Achieving all S-parameter goals (S11, S21, S22) simultaneously was challenging.
Optimization required careful balancing between gain and matching.

What We Did:
•Set weighted goals in the ADS Optim controller
•Tuned individual parameters iteratively before full optimization
•Achieved >15 dB gain (S21) while keeping S11 and S22 below –10 dB

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WORK DONE
Phase 1: Core Design
•Research & Literature Review Analyzed 5 IEEE papers to understand amplifier classes, transistor technologies, and layout
principles.
•Transistor Selection
Selected BFQ790 BJT for its availability, linearity, and power capacity near 2.4 GHz.
• DC Biasing & Q-point Setup
Designed bias network to ensure stable operation in Class AB mode.
• Load Pull Analysis
Tuned load impedance using Smith Chart and ADS simulations for max output power and efficiency.

Phase 2: Network & Simulation

• Input & Output Matching Networks
Designed using microstrip lines, capacitors, and stubs; optimized for 50Ω matching.
• Simulation & Optimization
Performed S-parameter and large-signal simulations, and used multi-goal optimization to achieve:
•S21 > 15 dB
•S11, S22 < –10 dB

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WORK DONE

Phase 3: Layout & Symbol

• Layout Design in ADS

Created a compact, low-loss layout with proper RF grounding and component placement.
•Symbol Generation from Layout
Built symbol for schematic integration and debugging (faced mapping issues – covered under challenges).

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SOCIAL RELEVANCE
•Enabling Next-Gen Communication
RF Power Amplifiers are essential in modern wireless technologies like 5G, Wi-Fi, Bluetooth, and IoT — all of which influence
everyday life, industries, and public infrastructure.
•Building Indigenous RF Design Capability
In India, most RF components are imported. By learning and designing at this level, we contribute toward self-reliance in high-frequency
electronics and help reduce dependency on foreign technologies.
•Applications in Health, Defence, and Connectivity
•Used in medical equipment such as wireless monitors
•Integral to defense communication systems
•Supports rural connectivity and satellite communication systems
•Skill Development for the Future
This project fosters practical skills in a highly specialized domain, aligning with national initiatives in electronics, semiconductors, and
communication technology development.
• Key Message
By developing core RF hardware knowledge, we move toward technological empowerment and contribute to building solutions that
connect, protect, and serve society.

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CONCLUSION
•This project offered an in-depth, hands-on journey through the complete RF power
amplifier design process from initial research to layout and symbol generation.
•Using Keysight ADS, we simulated, optimized, and laid out a 2.4 GHz RF Power
Amplifier, achieving performance metrics aligned with industry expectations.
•Despite fabrication challenges due to Gerber file issues, we:
•Completed functional layout design
•Understood the importance of pin mapping and layout-to-symbol flow
•Compared our layout with a real-world evaluation board to validate our design
direction
•More than just a project, this work helped us build strong fundamentals in RF
amplifier design, which is highly relevant in domains like 5G, radar, and wireless
communication systems.
• We may not have reached fabrication this time, but we’ve built the knowledge, skills, and
confidence to successfully design and implement RF PAs — a powerful step toward becoming skilled
RF engineers.

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References:
[1] Y. -S. Lee and Y. -H. Jeong, "A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications," IEEE Microwave and Wireless
Components Letters, vol. 17, no. 8, pp. 622–624, Aug. 2007, doi: 10.1109/LMWC.2007.901803.
[2] P. A. Atchike, J. Zbitou, A. E. Oualkadi, and P. Dherbécourt, "GaN HEMT power amplifier design for 2.45 GHz wireless applications," SAIEE Africa
Research Journal, vol. 114, no. 4, pp. 106–113, Dec. 2023, doi: 10.23919/SAIEE.2023.10319379.
[3] M. Amiri, Y. Alekajbaf, and N. Mssoumi, "L-band power amplifier design with discrete GaN transistor," in 2018 Iranian Conference on Electrical
Engineering (ICEE), Mashhad, Iran, pp. 1–5, 2018.
[4] S. Ilamaran, Z. Yusoff, and J. Sampe, "0.5 GHz–1.5 GHz bandwidth 10W GaN HEMT RF power amplifier design," International Journal of
Electrical and Computer Engineering, vol. 8, no. 3, pp. 1837–1843, Jun. 2018, doi: 10.11591/ijece.v8i3.pp1837-1843.
[5] B. Liu, C. C. Boon, M. Mao, P. Choi, and T. Guo, "A 2.4–6 GHz broadband GaN power amplifier for 802.11ax application," IEEE Transactions on
Circuits and Systems I: Regular Papers, vol. 68, no. 6, pp. 2404–2417, Jun. 2021, doi: 10.1109/TCSI.2021.3073345.
[6] A. AlMuhaisen, J. Lees, S. C. Cripps, P. J. Tasker and J. Benedikt, "Wide band high-efficiency power amplifier design," 2011 6th European
Microwave Integrated Circuit Conference, Manchester, UK, 2011
[7] G.Monprasert, P. Suebsombut , T Pongthavornkamol, S. Chalermwisutkul, “2.45 GHz GaN HEMT Class-AB RF Power Amplifier Design for
Wireless Communication Systems”.
[8] Yongbing Qian, Wenyuan Li, Zhigong, “ 2.4-GHz 0.18-μm CMOS Highly Linear Power Amplifier”, Institute of RF- & OE-ICs, Southeast university,
210096 Nanjing China, the 2010 International Conference on Advanced Technologies for Communications 2010 IEEE.
[9] Ravinder Kumar, Munish Kumar, Balraj, “Design and Implementation of a High Efficiency CMOS Power Amplifier for Wireless Communication at
2.45 GHz”, 2012 International Conference on Communication Systems and Network Technologies, 2012 IEEE.
[10] Wenyuan Li, Yulong Tan, “ 2.4GHz Power Amplifier with Adaptive Bias Circuit”, Institute of RF- & OE-ICs Southeast University Nanjing, China,
Institute of RF- & OE-ICs Southeast University Nanjing, China, 2012 International Conference on Systems and Informatics (ICSAI 2012), 2012 IEEE.
[11] Amiza Rasmi, A. Marzuki, M. Azmi Ismail, “Two Stage MMIC Medium Power Amplifier using Depletion Mode PHEMT for 5.8GHz Applications”,
2013IEEE.
[12] Chien-Cheng Lin, Yu-Cheng Hsu, “Single-chip Dual band WLAN Power Amplifier using InGaP/GaAs HBT”.
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 Thank You!

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