Electronic Materials

( 電子材料 )
MSE@NYCU

Lecture 12

2025-5-12
Lecturer: Yu-Chuan Lin, Ph.D.
 Schedule in May and June
• 5/2 (Friday, today)
• 5/5 (4th homework out)
• 5/12 (The end of CH6. The beginning of CH7)
• 5/19 (5th homework out)
• 5/26 (6th homework out, only 2 easy problems-
optional)
( 端午節 )
• 5/30 (Friday) – Let’s do a review for our final
exam
• 6/2 – Final exam
Transistors – continue
• BJT (review)
• MOSFET (more)
• Transistor material consideration
• Transistor performance
 pnp Bipolar Junction Transistor

(a) A schematic illustration of the pnp bipolar transistor with three differently doped regions.
(b) The pnp bipolar operated under normal and active conditions.
(c) The CB configuration with input and output circuits identified.
(d) The illustration of various current components under normal and active conditions.

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018) Fig 6.
 pnp Bipolar Junction Transistor

𝐼 𝐸=
𝑒𝐴 𝐷h 𝑝 𝑛𝑜
𝑊𝐵
exp
𝑒𝑉 𝐸𝐵
𝑘𝑇 ( ) 𝛼=
𝐼𝐶
𝐼𝐸 (
= 𝛼𝑇 𝛾 = 1 −
)
𝜏𝑡
𝜏h
𝛾

where VEB is the forward bias applied across

the emitter-base (EB) junction
 pnp Bipolar Junction Transistor

Solid State Electronics B.G. Streetman, 7th Edition

 “MOS”FET - The Ideal MOS Capacitor

Solid State Electronics B.G. Streetman, 7th Edition

“MOS”FET - The Ideal MOS Capacitor

V > Vth, an inversion layer is created near the

surface in which there are conduction electrons Solid State Electronics B.G. Streetman, 7th Edition
 Enhancement MOSFET

(1) (3)

Below threshold VGS < Vth and VDS > 0 Above threshold VGS > Vth and VDS =
VDS(sat)

(2) (4)

Above threshold VGS > Vth and 0 < VDS < Above threshold VGS > Vth and VDS >
 Enhancement MOSFET

(a) Typical ID vs VDS characteristics of an enhancement MOSFET (Vth = 4 V) for various fixed voltages VGS.
(b) Dependence of ID on VGS at a given VDS (> VDS(sat))

Fig of6.66
From Principles Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Current-Voltage Characteristics

(a) for n-​channel VD,VG,VT, and ID are positive; (b) for p-​channel all these
quantities are negative. Solid State Electronics B.G. Streetman, 7 th Edition
Current-Voltage Characteristics: Linear regime

L – gate length
W – gate width
𝐼 𝑥 =𝑊𝑄 ( 𝑥 ) 𝑉 ( 𝑥) VCH – channel voltage
here Q(x) – channel charge ; V(x) – carrier velocity
𝑑 𝑉 𝐶𝐻 ( 𝑥)
𝑉 ( 𝑥 )=𝜇𝑛 𝐸 ( 𝑥 ) =𝜇𝑛
𝑑𝑥
𝑄 ( 𝑥 )=𝐶 𝑜𝑥 [𝑉 𝐺𝑆 −𝑉 𝐶𝐻 ( 𝑥 ) − 𝑉 𝑇 ]
𝑑 𝑉 𝐶𝐻 ( 𝑥)
𝐼 𝑥 =𝑊𝑄 ( 𝑥 ) 𝑉 ( 𝑥 )=𝑊 𝜇𝑛 𝐶 𝑜𝑥 [ 𝑉 𝐺𝑆 −𝑉 𝐶𝐻 ( 𝑥 ) −𝑉 𝑇 ]
𝑑𝑥
Carry out integral to get and

𝑾 𝑾
𝝁𝒏 𝑪 𝒐𝒙 [𝑽 𝑮𝑺 − 𝑽 𝑻 ] 𝑽 𝑫𝑺 −
𝟐
𝑰 𝑫𝑺 =𝑾𝑸 ( 𝒙 ) 𝑽 ( 𝒙 ) = 𝝁𝒏 𝑪 𝒐𝒙 𝑽 𝑫𝑺
𝑳 𝟐𝑳
Current-Voltage Characteristics: Saturation regime

𝑾 𝑾
𝝁𝒏 𝑪 𝒐𝒙 [𝑽 𝑮𝑺 − 𝑽 𝑻 ] 𝑽 𝑫𝑺 −
𝟐
𝑰 𝑫𝑺 =𝑾𝑸 ( 𝒙 ) 𝑽 ( 𝒙 ) = 𝝁𝒏 𝑪 𝒐𝒙 𝑽 𝑫𝑺
𝑳 𝟐𝑳
Linear regime)

When is large,

𝟏 𝑾 𝟐
𝑰 𝑫𝑺 = 𝝁𝒏 𝑪𝒐𝒙 ( )(𝑽 𝑮𝑺 − 𝑽 𝑻 )
𝟐 𝑳
Saturation regime)
 Transfer characteristics

Plot of drain current vs. gate

voltage for MOSFETs in the linear
region;

Saturation region transfer characteristics:

plot of square root of the drain current vs.
gate voltage for MOSFETs .

Transconductance as a function of gate

bias
Solid State Electronics B.G. Streetman, 7th Edition
Saturation velocity

“Becomes independent of electrical field”

Low (REF:Wikipedia)
field

• Under low electrical field (low ), electron velocity v = mo

• As increases, v saturates (vPeak) and becomes independent of
• Ideally, devices want to operate at vPeak
• For Si it is in the order of 1×107 cm/s, for GaAs 1.2×107 cm/s, while
for 6H-SiC, it is near 2×107 cm/s. (REF:Wikipedia)
 Transistor Architectures
(Metal-Semiconductor FET) (High electron mobility transistor) (Metal-Oxide-Semi. FET)

• No dielectric • 2D electron gas (2DEG)

• Based on a Schottky gate form at the interface
• Create an inversion layer of
2DEG
 Depletion MOSFET

Lecture 11 -20250505, on one of JFET slides:

(1)

• VGS = 0, ID increases with VDS .

• At VDS = VDS(sat), the channel is pinched off and ID becomes saturated at IDSS.
 Depletion MOSFET
(2)

Depletion mode: When VGS is negative, the channel has a lower conductance and
pinch-off occurs at a lower VDS .

(3)

Enhancement mode: When VGS is positive, the channel has a higher conductance and
pinch-off occurs at a higher VDS .
 Materials in Transistors

• For a fast device speed, the materials need fast carriers. It means
that the and peak velocity () need to be high.
• For power devices, the electrical breakdown field (EBR) and thermal
conductivity in the materials need to high enough
FET Performance
Metrics

Solid State Electronics B.G. Streetman, 7th Edition

Effects of Real Surfaces: Work Function
Difference

If

“Effect of a negative work function difference (a) band bending and formation
of negative charge at the semiconductor surface; (b) achievement of the flat
band condition by application of a negative voltage.”
Solid State Electronics B.G. Streetman, 7th Edition
Effects of Real Surfaces: Interface Charge

“ (b )This positive charge induces an equivalent negative charge in the

semiconductor, which requires a negative gate voltage to achieve the flat
band condition.”

Solid State Electronics B.G. Streetman, 7th Edition

Effects of Real Surfaces: Interface Charge
How do we block Na in IC process?
Interface quality and defects affect FET
performance

DOI:10.1038/s41467-020-16640-8
The end of CH.6
CH7: Dielectric Materials and
Insulation
A variety of capacitors are routinely
used in modern electronics

The electronic circuit board behind the screen of a Tektronix

oscilloscope clearly shows how prevalent and important
capacitors are in electronics engineering. There are several
different types of capacitors such as ceramic, polyester and
electrolytic, in this circuit board. (Courtesy of Junyi Yang,
University of Saskatchewan)
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Electrolytic Polypropylene Ceramic

Polypropylene Polyester

Electrolytic
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Ceramic

Polypropylene
Polypropylene
Polyester Polyester Polyester Electrolytic
Ceramic

Capacitors with energy in the range 100 to 300 mJ

Polyes Mica Tantalu

ter m

Polypropyl
Cerami
ene
c

Capacitors with energy in the range 0.8 mJ to 2 mJ

0.22 F0.047 0.022

F F
5.5 V 5.5 V 5.5 V

1F
6.3 V
4.7 F
50 F
350 F 2.5 V
2.7 V All photos by S.
2.7 V Kasap, 2016
Supercapacitors with energy in the range to 0.3 J to 1.27 kJ

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Definition of Capacitance

𝑄𝑜
𝐶𝑜 =
𝑉
Co = capacitance of a parallel plate capacitor in free
space
Qo = charge on the plates
V = voltage

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 A Dielectric Inserted into a
Capacitor

(a) Parallel plate capacitor with free space between the plates.
(b) As a slab of insulating material is inserted between the plates, there is an external current
flow indicating that more charge is stored on the plates.
(c) The capacitance has been increased due to the insertion of a medium between the plates.

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Definition of Electric Dipole Moment

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Definition of Relative Permittivity

𝑄 𝐶
𝜀𝑟 = =
𝑄𝑜 𝐶𝑜
r = relative permittivity, Q = charge on the plates with a dielectric medium, Qo =
charge on the plates with free space between the plates, C = capacitance with a
dielectric medium, Co = capacitance of a parallel plate capacitor in free space

Definition of Dipole
Moment
p = Qa
p = electric dipole moment, Q = charge, a = vector from the negative to the positive
charge

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
The Origin of Electronic Polarization

b = Restoring force constant

Electronic
polarizability

( )
2 2
Ze
𝑝 𝑒=(Ze)𝑥= 𝐸
β
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Ka
The Origin of Electronic Polarization

b = Restoring force constant

Electronic polarization resonance frequency

Classical electronic polarizability Atomic radius

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw
 Definition of Polarizability
pinduced = E
pinduced = induced dipole moment,  = polarizability, E = electric field

Electronic Polarization

( )𝐸
2 2
Z e
𝑝 𝑒 =( Ze) 𝑥=
β
pe = magnitude of the induced electronic dipole moment, Z = number of electrons
orbiting the nucleus of the atom, x = distance between the nucleus and the center of
negative charge,  = constant, E = electric field

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Classical Electronic Polarizability

Experimental

ae = (1.1110-10 F m-
1
)ro3

Electronic polarizability ae versus for the elements in Period 3 from Na to Ar. The
dashed line is the best fit passing through the origin. The classical theory is Equation
7.6.
From Principles of Electronic Materials and Devices, Fourth
Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Polarization

(a) When a dilectric is placed in an electric field, bound polarization charges appear on
the opposite surfaces.
(b) The origin of these polarization charges is the polarization of the molecules of the
medium.
(c) We can represent the whole dielectric in terms of its surface polarization charges
+QP and -QP.
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-H
 Definition of Polarization Vector

1
P = [ p 1+ p 2 +...+ p 𝑁 ]
Volume
P = Polarization vector, p1, p2, ..., pN are the dipole moments induced
at N molecules in the volume
Definition of Polarization Vector

P = Npav
pav = the average dipole moment per molecule
P = polarization vector, N = number of molecules per unit volume

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
efinition of Electronic Susceptibility

P = eoE
P = polarization, e = electric susceptibility, o = permittivity of free space, E = electric
field
Electric Susceptibility and Polarization

e = electric susceptibility, o = permittivity of free space, N = number of molecules per

unit volume, e = electronic polarizability
Relative Permittivity and Electronic Susceptibility
r = 1 +  e
r = relative permittivity, e = electric susceptibility

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Relative Permittivity and
Polarizability

r = 1 + e 𝜀 =1+ 𝑁 𝛼𝑒
𝑟
𝜀𝑜
r = relative permittivity
N = number of molecules per unit volume
e = electronic polarizability
o = permittivity of free space
Assumption: Only electronic polarization is present

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Electronic Polarization in Covalent Solids

(b)
(a)

(a) Valence electrons in covalent bonds in the absence of an applied field.

(b) When an electric field is applied to a covalent solid, the valence electrons in the covalent
bonds are shifted very easily with respect to the positive ionic cores. The whole solid becomes
polarized due to the collective shift in the negative charge distribution of the valence electrons.

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018) Fig 7.8
POLARIZATION MECHANISM (I): Ionic Polarization in
NaCl

(a) A NaCl chain in the NaCl crystal without an applied field. Average or net dipole
moment per ion is zero.
(b) In the presence of an applied field the ions become slightly displaced which leads
to a net average dipole moment per ion.
Fig 7.9
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Ionic Polarization in NaCl

Ionic polarizability

Ni is the number of ion pairs per unit volume

Fig 7.9
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 The Local Field

The electric field inside a polarized dielectric at the atomic scale is not uniform. The local field is the
actual field that acts on a molecules. It can be calculated by removing that molecules and evaluating the
field at that point from the charges on the plates and the dipoles surrounding the point.

Fig 7.7
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Local Field in Dielectrics
1
E loc= E+ P
3 𝜀𝑜
Eloc = local field, E = electric field, o = permittivity of free space, P =
polarization

Clausius-Mossotti Equation
𝜀 𝑟 − 1 𝑁 𝛼𝑒
=
𝜀𝑟 +2 3 𝜀𝑜
r = relative permittivity, N = number of molecules per unit volume, e
= electronic polarizability, o = permittivity of free space

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
POLARIZATION MECHANISM (II):
Orientational or Dipolar Polarization

(a) A HCl molecule possesses a permanent dipole moment po.

(b) In the absence of a field, thermal agitation of the molecules results in zero net average dipole
moment per molecule.
(c) A dipole such as HCl placed in a field experiences a torque that tries to rotate it to align po
with the field E.
(d) In the presence of an applied field, the dipoles try to rotate to align with the field against
thermal agitation. There is now a net average dipole moment per molecule along the field.
Average Dipole Moment in Orientational Polarization

2
1 po E
pav =
3 kT

pav = average dipole moment, po = permanent dipole moment, E =

electric field, k = Boltzmann constant, T = temperature
Dipolar Orientational Polarizability

2
1 𝑝𝑜
𝛼 𝑑=
3 𝑘𝑇
d = dipolar orientational polarizability, po = permanent dipole
moment
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
POLARIZATION MECHANISM (III): Interfacial
Polarization

(a) A crystal with equal number of mobile positive ions and fixed negative ions. In the
absence of a field, there is no net separation between all the positive charges and all the
negative charges.
(b) In the presence of an applied field, the mobile positive ions migrate toward the negative
charges and positive charges in the dielectric. The dielectric therefore exhibits
interfacial polarization.
(c) Grain boundaries and interfaces between different materials frequently give rise to
interfacial polarization.
(d) Positive and negative ions within a grain boundary can jump to neighboring vacant sites,
aided by the field, and thereby form dipoles within the grain boundary.
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Total Induced Dipole Moment

pav = e Eloc + i Eloc + d Eloc

pav = average dipole moment, Eloc = local electric field, e = electronic polarizability, i
= ionic polarizability, d = dipolar (orientational) polarizability

Clausius-Mossotti Equation

𝜀𝑟 − 1 1
= (𝑁 𝑒 𝛼𝑒 +𝑁 𝑖 𝛼𝑖 )
𝜀𝑟 +2 3 𝜀𝑜
r = dielectric constant, o = permittivity of free space, Ne = number of atoms or ions
per unit volume, e = electronic polarizability, Ni = number of ion pairs per unit volume
, i = ionic polarizability
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Polarization Relaxation and Dielectric Loss

Polarization
Relaxation

The dc field is suddenly changed from Eo to E at time t = 0. The induced dipole moment
p has to decrease from ad(0)Eo to a final value of ad(0)E. The decrease is achieved by
random collisions of molecules in the gas.
Fig
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018) 7.12
 Dipolar Relaxation Equation

dp 𝑝 −𝛼 𝑑 (0)E
=−
dt 𝜏
p = dipole moment, dp/dt = rate at which the induced dipole moment
is changing, d = dipolar orientational polarizability, E = electric field,
 = relaxation time
Orientational Polarizability and
Frequency
𝛼 𝑑 (0)
𝛼 𝑑 (𝜔)=
1+ 𝑗 𝜔𝜏
d () = dipolar orientational polarizability as a function of ,  =
angular frquency of the applied field,  = relaxation time, j is (-1).

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Dipolar Medium under AC Excitation

E = Eoexp(jwt)

dp 𝑝 −𝛼 𝑑 (0)E
=−
dt 𝜏

An AC field is applied to a dipolar medium

Fig
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
7.13
 Dipolar Medium under AC Excitation

𝛼 𝑑 (0)
𝛼 𝑑 (𝜔)=
1+ 𝑗 𝜔𝜏

(a) An AC field is applied to a dipolar medium. The polarization P (P = Np) is out of

phase with the AC field.
(b) The relative permittivity is a complex number with real (r') and imaginary (r'') parts
that exhibit sharp relaxation features at ω ≈ 1∕τ.
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Complex Relative Permittivity

′ ″
𝜀𝑟 =𝜀 − 𝑗 𝜀 𝑟 𝑟
r = dielectric constant
r = real part of the complex dielectric constant
r = imaginary part of the complex dielectric constant
j = imaginary constant (-1)

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Dipolar Dielectric and Equivalent Circuit
Model

The dielectric medium behaves like an ideal (lossless) capacitor of capacitance C which
is in parallel with a conductance Gp.

Fig 7.14
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Dipolar Dielectric and Equivalent Circuit
Model

Fig 7.14
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Admittance of a Parallel Plate Capacitor

Y = j C + G P
Y = admittance,  = angular frequency of the applied field , C =
capacitance, GP = conductance

Loss Tangent
″
𝜀 𝑟
tan 𝛿= ′
𝜀 𝑟
tan = loss tangent or loss factor, r = real part of the complex dielectric constant,
r = imaginary part of the complex dielectric constant

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Dielectric Loss per Unit Volume
2 ′
𝑊 vol = 𝜔 E 𝜀 𝜀 tan 𝛿 𝑜 𝑟
Wvol = dielectric loss per unit volume
 = angular frequency of the applied field
E = electric field (rms)
o = permittivity of free space
r = real part of the complex dielectric constant
tan = loss tangent or loss factor

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Frequency Dependence of Dielectric Properties

Relaxation

Resonance

The frequency dependence of the real and imaginary parts of the dielectric constant in the
presence of interfacial, orientational, ionic, and, electronic polarization mechanisms.

Fig 7.15
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Dielectric Loss Peaks

Frequency (x 1012 Hz)

Real and imaginary part is of the dielectric constant, r' and r'' versus frequency for (a) a polymer,
PET, at 115 C and (b) an ionic crystal, KCl, at room temperature. Both exhibit loss peaks but for
different reasons.
SOURCE: Data for (a) from author’s own experiments using a dielectric analyzer (DEA), (b) data
extracted from Smart, C., Wilkinson, G.R., Karo, A.M., and Hardy, J.R., International Conference on
Lattice Dynamics, Copenhagen, 1963, as quoted by Martin, D.H., “The Study of the Vibration of
Crystal Lattices by Far Infra-Red Spectroscopy,” Advances in Physics, 14, no. 53–56, 1965, pp. 39–
100.

Fig 7.16
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Electrical Trees in Dielectric Breakdown

Electrical breakdown by treeing (formation of discharge channels) in a low-density polyethylene

insulation when a 50 Hz, 20 kV (rms) voltage is applied for 200 minutes to an electrode embedded
in the insulation.

J. W. Billing and D. J. Groves, “Treeing in mechanically strained h.v.-cable polymers using conducting polymer electrodes”
Proceedings of the Institution of Electrical Engineers, Volume 121, Issue 11, 1974, p. 1451. Reproduced by permission of the
Institution of Engineering & Technology.

From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Electron Impact Ionization in Gas

(a) Impact ionization, (b) ionization of a gas atom through electron impact

Fig 7.26
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
 Corona and Partial Discharges

Corona and Partial Discharges:

(a) The field is greatest on the surface of the cylindrical conductor facing ground. If the voltage is sufficiently
large this field gives rise to a corona discharge.
(b) The field in a void within a solid can easily cause partial discharge.
(c) The field in the crack at the solid-metal interface can also lead to a partial discharge.
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018) Fig 7.25
From Principles of Electronic Materials and Devices, Fourth Edition, S.O. Kasap (© McGraw-Hill Education, 2018)
Ex: Dielectric oxide
Candidate dielectric materials
Electrical field at which materials become conductive
Break Down Voltage (V/micron)

Keep applying voltage

until there’s a leak current

(Metal)

(Metal) Use metal-insulator-metal

(MIM) structure to the
obtain breakdown voltage
of a dielectric
Oxide breakdown: Intrinsic

The (3) is called “impact ionization”, which can break bonds of dielectric
materials due to hot carrier injection. Consequently, there will be dangling
bonds on the surface of dielectrics and introduce interface traps (D it)

http://www.stanford.edu/class/ee311/NOTES/GateDielectric.pdf