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Lect. 1 and 2

The document discusses the principles of conduction in electric and electronic circuits, focusing on conduction electrons and holes in semiconductors. It explains the processes of doping to create n-type and p-type semiconductors, detailing the behavior of majority and minority carriers. Additionally, it covers the formation of pn junctions and the phenomenon of reverse breakdown, including the avalanche effect in semiconductors.

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0% found this document useful (0 votes)
2 views36 pages

Lect. 1 and 2

The document discusses the principles of conduction in electric and electronic circuits, focusing on conduction electrons and holes in semiconductors. It explains the processes of doping to create n-type and p-type semiconductors, detailing the behavior of majority and minority carriers. Additionally, it covers the formation of pn junctions and the phenomenon of reverse breakdown, including the avalanche effect in semiconductors.

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sqkw2jcr7c
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Electric and Electronic Circuits

Faculty of Computer Engineering


Second Semester

Lectures : (1)

Date: 10/02/2025

Dr : Alaa Adam
Conduction Electrons and Holes
Another type of current occurs in the valence band, where the holes created by
the free electrons exist. Electrons remaining in the valence band are still
attached to their atoms and are not free to move randomly in the crystal
structure as are the free electrons. However, a valence electron can move into a
nearby hole, thus leaving another hole where it came from. Effectively the hole
has moved from one place to another in the crystal structure, as illustrated in
Figure. Although current in the valence band is produced by valence electrons,
it is called hole current to distinguish it from electron current in the conduction
band.
Doping (Adding Impurities)

• Semiconductive materials do not conduct current well and


are of limited value in their intrinsic state.

• Intrinsic silicon (or germanium) must be modified by


increasing the number of free electrons or holes to increase its
conductivity and make it useful in electronic devices.
• This is done by adding impurities to the intrinsic material.

• This process, called doping, increases the number of current


carriers (electrons or holes).
N-Type Semiconductor
• Since most of the current carriers are electrons, silicon (or germanium) doped with
pentavalent atoms is an n-type semiconductor (the n stands for the negative charge
on an electron).

• The electrons are called the majority carriers in n-type material.

• There are also a few holes that are created when electronhole pairs are thermally
generated.

• Holes in an n-type material are called minority carriers. Because the pentavalent
atom gives up an electron, it is often called a donor atom.
P-Type Semiconductor

• Since most of the current carriers are holes, silicon (or germanium)
doped with trivalent atoms is called a p-type semiconductor.

• The holes are the majority carriers in p-type material.

• There are also a few conduction-band electrons that are created when
electron-hole pairs are thermally generated.

• Conduction-band electrons in p-type material are the minority carriers.


Because the trivalent atom can take an electron, it is often referred to as an
acceptor atom
Pn junction

• Before the pn junction is formed, there are as many electrons as protons in


the n-type material, making the material neutral in terms of net charge. The
same is true for the p-type material.
• After the pn junction is formed, the n region loses free electrons as they
diffuse across the junction.
• This creates a layer of positive charges (pentavalent ions) near the junction.
• As the electrons move across the junction, the p region loses holes as the
electrons and holes combine.
• This creates a layer of negative charges (trivalent ions) near the junction.
• These two layers of positive and negative charges form the depletion region.
• In the end equilibrium is established and there is no further diffusion of
electrons across the junction.
Reverse Breakdown
• If the external reverse-bias voltage is increased to a value called the
breakdown voltage, the reverse current will drastically increase.

• The high reverse-bias voltage imparts energy to the free minority


electrons so that as they speed through the p region, they collide with
atoms with enough energy to knock valence electrons out of orbit and into
the conduction band.
• The newly created conduction electrons are also high in energy and
repeat the process.

• The multiplication of conduction electrons is known as the avalanche


effect.

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