GDDR4 SDRAM : Notes
0 likes146 views
GDDR4 SDRAM is a type of graphics card memory that was intended to replace GDDR3. In 2005, Samsung developed the first 256-Mbit GDDR4 chip running at 2.5 Gbit/s. GDDR4 introduced technologies like Data Bus Inversion and Multi-Preamble to reduce power consumption and improve performance. While it achieved higher speeds and bandwidth than GDDR3, GDDR4 was quickly replaced by GDDR5 within a year as manufacturers like Qimonda moved directly to the newer standard.
1 of 3
Download to read offline
![02/10/2020 GDDR4 SDRAM - Wikipedia
https://en.wikipedia.org/wiki/GDDR4_SDRAM 1/3
GDDR4 SDRAM
GDDR4 SDRAM, an abbreviation for Graphics Double Data Rate 4 Synchronous Dynamic Random-
Access Memory, is a type of graphics card memory specified by the JEDEC Semiconductor Memory
Standard.[1][2] It is a rival medium to Rambus's XDR DRAM. GDDR4 is based on DDR3 SDRAM technology
and was intended to replace the DDR2-based GDDR3, but it ended up being replaced by GDDR5 within a year.
History
Technologies
Adoption
See also
References
External links
On October 26, 2005, Samsung announced that it developed the first GDDR4 memory, a 256-
Mbit chip running at 2.5 Gbit/s. Samsung also revealed plans to sample and mass-produce
GDDR4 SDRAM rated at 2.8 Gbit/s per pin.[3]
In 2005, Hynix developed the first 512-Mbit GDDR4 memory chip.[4]
On February 14, 2006, Samsung announced the development of 32-bit 512-Mbit GDDR4 SDRAM
capable of transferring 3.2 Gbit/s per pin, or 12.8 GB/s for the module.[5]
On July 5, 2006, Samsung announced the mass-production of 32-bit 512-Mbit GDDR4 SDRAM
rated at 2.4 Gbit/s per pin, or 9.6 GB/s for the module. Although designed to match the
performance of XDR DRAM on high-pin-count memory, it would not be able to match XDR
performance on low-pin-count designs.[6]
On February 9, 2007, Samsung announced mass-production of 32-bit 512-Mbit GDDR4 SDRAM,
rated at 2.8 Gbit/s per pin, or 11.2 GB/s per module. This module was used for some AMD
cards.[7]
On February 23, 2007, Samsung announced 32-bit 512-Mbit GDDR4 SDRAM rated at 4.0 Gbit/s
per pin or 16 GB/s for the module and expects the memory to appear on commercially available
graphics cards by the end of year 2007.[8]
GDDR4 SDRAM introduced DBI (Data Bus Inversion) and Multi-Preamble to reduce data transmission delay.
Prefetch was increased from 4 to 8 bits. The maximum number of memory banks for GDDR4 has been
increased to 8. To achieve the same bandwidth as GDDR3 SDRAM, the GDDR4 core runs at half the
performance of a GDDR3 core of the same raw bandwidth. Core voltage was decreased to 1.5 V.
Data Bus Inversion adds an additional active-low DBI# pin to the address/command bus and each byte of data.
If there are at more than four 0 bits in the data byte, the byte is inverted and the DBI# signal transmitted low. In
this way, the number of 0 bits across all nine pins is limited to four.[9]:9 This reduces power consumption and
ground bounce.
Contents
History
Technologies](https://image.slidesharecdn.com/gddr4sdram-wikipedia-201003191233/85/GDDR4-SDRAM-Notes-1-320.jpg)
![02/10/2020 GDDR4 SDRAM - Wikipedia
https://en.wikipedia.org/wiki/GDDR4_SDRAM 2/3
On the signaling front, GDDR4 expands the chip I/O buffer to 8 bits per two cycles, allowing for greater
sustained bandwidth during burst transmission, but at the expense of significantly increased CAS latency (CL),
determined mainly by the double reduced count of the address/command pins and half-clocked DRAM cells,
compared to GDDR3. The number of addressing pins was reduced to half that of the GDDR3 core, and were
used for power and ground, which also increases latency. Another advantage of GDDR4 is power efficiency:
running at 2.4 Gbit/s, it uses 45% less power when compared to GDDR3 chips running at 2.0 Gbit/s.
In Samsung's GDDR4 SDRAM datasheet, it was referred as 'GDDR4 SGRAM', or 'Graphics Double Data Rate
version 4 Synchronous Graphics RAM'. However, the essential block write feature is not available, so it is not
classified as SGRAM.
The video memory manufacturer Qimonda (formerly Infineon Memory Products division) has stated it will
"skip" the development of GDDR4, and move directly to GDDR5.[10]
List of device bandwidths
1. "Standards & Documents Search: sgram" (http://www.jedec.org/standards-documents/results/SG
RAM). www.jedec.org. Retrieved 9 September 2013.
2. "Standards & Documents Search: gddr4" (http://www.jedec.org/standards-documents/results/GD
DR4). www.jedec.org. Retrieved 9 September 2013.
3. "Samsung Electronics Develops Industry's First Ultra-Fast GDDR4 Graphics DRAM" (https://ww
w.samsung.com/semiconductor/insights/news-events/samsung-electronics-develops-industrys-fir
st-ultra-fast-gddr4-graphics-dram/). Samsung Semiconductor. Samsung. October 26, 2005.
Retrieved 8 July 2019.
4. "History: 2000s" (https://www.skhynix.com/eng/about/history2000.jsp). SK Hynix. Retrieved 8 July
2019.
5. Samsung Develops Ultra-fast Graphics Memory: A More Advanced GDDR4 at Higher Density (htt
p://www.samsung.com/Products/Semiconductor/News/GraphicsMemory/category_GraphicsMem
ory_20060214_0000233753.htm)
6. Samsung sends GDDR4 graphics memory into mass production (https://web.archive.org/web/200
60706142817/http://www.tgdaily.com/2006/07/05/samsung_gddr4/)
7. Samsung releases fastest GDDR-4 SGRAM (http://www.theinquirer.net/default.aspx?article=3755
9) Archived (https://web.archive.org/web/20070212033434/http://theinquirer.net/default.aspx?artic
le=37559) 2007-02-12 at the Wayback Machine
8. Samsung accelerates graphics memory to 2000 MHz (https://web.archive.org/web/20070225083
354/http://www.tgdaily.com/2007/02/23/samsung_gddr/)
9. Choi, J.S. (2011). DDR4 Mini Workshop (https://www.jedec.org/sites/default/files/JS_Choi_DDR4
_miniWorkshop.pdf#page=9) (PDF). Server Memory Forum 2011. This presentation is about
DDR4 rather than GDDR4, but both use data bus inversion.
10. Softpedia report (http://news.softpedia.com/news/Qimonda-Plans-GDDR5-50282.shtml)
X-Bit Labs (GDDR4 closing in) (https://web.archive.org/web/20150128201329/http://www.xbitlabs.
com/news/memory/display/20040505122429.html)
Adoption
See also
References
External links](https://image.slidesharecdn.com/gddr4sdram-wikipedia-201003191233/85/GDDR4-SDRAM-Notes-2-320.jpg)
Ad
Recommended
GDDR5 SDRAM : Notes
GDDR5 SDRAM : NotesSubhajit Sahu GDDR5 SDRAM, a type of synchronous graphics memory, is designed for high-performance graphics cards and computing with a high bandwidth DDR interface. It was introduced in 2007 and saw significant advancements in data rates and production, including the development of GDDR5X, which offers even higher transfer rates. GDDR5 has become integral in modern graphics hardware, including applications in gaming consoles like the PlayStation 4.
I_O Switch Thunderstorm Data Sheet
I_O Switch Thunderstorm Data SheetDimitar Boyn Thunderstorm is a PCIe flash storage card that provides:
1) Fast parallel access to flash memory for up to 80 Gbps throughput and 10x faster boot times compared to SAS.
2) Compatibility without requiring driver software and support for open standards and virtualization.
3) An economical solution without vendor lock-in and with field serviceable flash modules.
Storage Geeks 101 - 2019
Storage Geeks 101 - 2019Andrew McGee The document provides a comprehensive overview of advancements in storage technology, covering hard disk drives (HDDs) and solid-state drives (SSDs). It details key technological improvements in HDDs, such as perpendicular magnetic recording (PMR), shingled magnetic recording (SMR), heat-assisted magnetic recording (HAMR), and micro-assisted magnetic recording (MAMR), as well as the evolution of SSDs focusing on NAND flash memory types. The document concludes with insights into storage architectures like block, file, and object storage, along with data protection and optimization techniques.
4.4 manage disk quotas
4.4 manage disk quotasAcácio Oliveira This document discusses managing disk quotas in Linux. It describes using the quota utility to view quota information, edquota to edit quotas, and repquota to generate reports. It also covers enabling and disabling quotas with quotaon and quotaoff. Key tools covered are quota, edquota, repquota, quotaon, and quotaoff. The document provides examples of using these tools to set user and group quotas, view quota usage, and manage quotas on Linux file systems.
Lecture5 cuda-memory-spring-2010
Lecture5 cuda-memory-spring-2010douglaslyon The document discusses CUDA memory types and optimization strategies for GPU programming. It describes the different memory spaces threads can access, including registers, shared memory, global memory, and constant memory. It recommends partitioning data into tiles that fit into the faster shared memory and loading tiles from global memory into shared memory to reuse data and reduce memory bandwidth usage. The document provides an example of tiled matrix multiplication on the GPU using this strategy with shared memory.
101 4.4 manage disk quotas
101 4.4 manage disk quotasAcácio Oliveira This document discusses managing disk quotas in Linux. It provides an overview of key commands used to set up, edit, check, generate reports on, and manage disk quotas, including quota, edquota, repquota, quotaon, and quotaoff. It describes how these commands work and their various options. The goal of disk quotas is to limit disk usage on a per-user or per-group basis to control storage consumption.
Supporting HDF5 in GrADS
Supporting HDF5 in GrADSThe HDF-EOS Tools and Information Center This document discusses supporting HDF5 in GrADS, an interactive desktop tool for analyzing earth science data. It outlines how GrADS currently handles different data formats, including HDF4 and netCDF. The document proposes two options for supporting HDF5 in GrADS - linking with the NetCDF-4 library, which would be easy but limited, or linking directly with the HDF5 library, which would require a new interface but provide more general HDF5 support.
GlusterFS CTDB Integration
GlusterFS CTDB IntegrationEtsuji Nakai This document provides instructions for setting up a clustered Samba file server using GlusterFS and CTDB. It begins with an overview of CTDB and why it is needed when using GlusterFS with CIFS/NFS clients instead of native clients. It then describes the steps to configure GlusterFS volumes, install CTDB, configure the network topology with separate interconnects for GlusterFS and CTDB, and integrate Samba with CTDB. The goal is to provide features like floating IP addresses and shared file locks across multiple Samba servers using the distributed storage provided by GlusterFS.
DDR4 SDRAM : Notes
DDR4 SDRAM : NotesSubhajit Sahu DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, officially released in 2014, providing higher data rate transfer speeds and lower voltage requirements compared to its predecessor DDR3. It supports module capacities of up to 64 GiB and operates at a voltage of 1.2 V, offering significant improvements in performance and efficiency. DDR4 is not compatible with earlier RAM types due to differences in both signaling voltage and physical interface.
DDR, GDDR, HBM SDRAM Memory
DDR, GDDR, HBM SDRAM MemorySubhajit Sahu The document provides a comprehensive overview of various types of DRAM technologies, including DDR3, DDR4, and graphics memory (GDDR), detailing specifications such as voltage, speed, bandwidth, and compatibility. It also discusses ECC memory, high bandwidth memory (HBM), and non-volatile RAM technologies, highlighting their advantages and applications in different computing contexts. Additionally, the document covers aspects of memory module design, including pin configurations and memory timings relevant for performance optimization.
DDR, GDDR, HBM Memory : Presentation
DDR, GDDR, HBM Memory : PresentationSubhajit Sahu The document provides a detailed overview of various types of DDR SDRAM technologies, including DDR3, DDR4, GDDR, and High Bandwidth Memory (HBM), highlighting key specifications such as voltages, capacities, and speeds. It also discusses memory-related technologies such as error correction codes (ECC), memory dimensions, and the significance of specific memory features in different applications, particularly in servers and graphics. Furthermore, it mentions the evolution of memory interface technologies and the increasing demand for higher bandwidth and lower power consumption.
DDR SDRAMs
DDR SDRAMsPrankit Mishra DDR - SDRAMs are classified into different types including SDRAM, DDR1, DDR2, DDR3, and DDR4. SDRAM synchronizes itself with the CPU timing to allow for faster memory access. DDR1 allows for higher transfer rates through double pumping of the data bus. DDR2 further increases speeds through lower power usage and internal clock running at half the external clock rate. DDR3 and DDR4 continue to improve speeds and bandwidth through higher data transfer rates and lower voltage requirements. Each new generation is not compatible with previous types due to changes in signaling and interfaces.
Kernel Recipes 2019 - Marvels of Memory Auto-configuration (SPD)
Kernel Recipes 2019 - Marvels of Memory Auto-configuration (SPD)Anne Nicolas The document discusses the evolution of memory module configurations, transitioning from older formats like Parallel Presence Detect (PPD) to Serial Presence Detect (SPD) in DDR4 memory. It outlines the limitations of previous technologies and details SPD's implementation, including EEPROM storage specifics and various address mapping challenges. Additionally, it addresses Linux support for these memory configurations and proposes solutions for effective EEPROM management in DDR4 systems.
DDR SDRAM : Notes
DDR SDRAM : NotesSubhajit Sahu DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) is a class of memory integrated circuits used in computers, which allows for higher transfer rates compared to its predecessor, SDR SDRAM, through techniques like double pumping. Introduced in 1998, DDR has evolved through multiple generations (DDR2, DDR3, DDR4, and DDR5), with each generation offering improvements in speed, power consumption, and efficiency while being incompatible with previous versions. DDR SDRAM modules are available in various formats, including DIMMs for desktops and SO-DIMMs for laptops, and have specific voltage and configuration standards defined by JEDEC.
ROM (Rhehuiejead Only Mem67😁😁❤ory).pptx
ROM (Rhehuiejead Only Mem67😁😁❤ory).pptxSagniTolasa Read-Only Memory (ROM) is utilized for firmware storage due to its permanence, with modern types allowing for limited reprogramming. Dynamic Random Access Memory (DRAM) is a volatile memory that requires periodic refreshing, with various types improving speed and efficiency over time. Solid State Drives (SSDs) offer persistent data storage using integrated circuits, providing advantages over traditional hard drives despite being more expensive per unit of storage.
Memory system
Memory systemgourav kottawar The document discusses various types of computer memory technologies, including RAM types like DRAM, SRAM, DDR, DDR2, and DDR3. It explains the memory hierarchy from registers to cache to main memory to disks. Key points covered include how DRAM works using capacitors that must be periodically refreshed, advantages of SDRAM over regular DRAM like pipelining commands. Generations of DDR memory are compared in terms of clock speeds, data rates, and other features.
High Bandwidth Memory : Notes
High Bandwidth Memory : NotesSubhajit Sahu High Bandwidth Memory (HBM) is a high-speed stacked memory interface used in high-performance graphics cards and supercomputers. HBM achieves higher bandwidth than GDDR5 using 3D stacking of DRAM dies and through-silicon vias. The first HBM was produced in 2013, and the technology has since progressed through HBM2, HBM2E, and upcoming HBMnext standards, doubling bandwidth with each generation. HBM is used to provide massive memory bandwidth for applications such as graphics processing and AI.
Understanding and Testing DDR4 R-DIMM and LR-DIMM Technology
Understanding and Testing DDR4 R-DIMM and LR-DIMM TechnologyIntegrated Device Technology This webinar discusses the advancements in DDR4 RDIMM and LRDIMM technologies, comparing their architectures and benefits over DDR3. Notably, DDR4 LRDIMMs achieve better signal integrity with reduced loads on the motherboard compared to RDIMMs, leading to improved performance and scalability. The presentation covers data throughput capabilities, memory density, and command flow protocols, highlighting the innovations in DDR4's design for enhanced efficiency.
2011 DDR4 Mini Workshop.pdf
2011 DDR4 Mini Workshop.pdfssuser2a2430 DDR4 introduces new features such as bank grouping, cyclic redundancy check, and multi-purpose registers to improve performance and reliability over DDR3. It supports higher densities up to 16Gb and speeds up to 3.2Gbps while lowering the voltage. Training flows are also enhanced in DDR4 with the addition of internal voltage reference training, preamble training, and more options for data pattern testing using multi-purpose registers during initialization.
Memory And Storages
Memory And StoragesArsalan Qureshi RAM and ROM are two types of computer memory. RAM, or random-access memory, is volatile and used for temporary storage of programs and data that are actively being used. It allows information to be accessed randomly in constant time. ROM, or read-only memory, is non-volatile and used to store permanent programs and data. It can only be modified slowly or with difficulty. The two main types of RAM are SRAM and DRAM, while the main types of ROM include PROM, EPROM, EEPROM, and flash memory. Both RAM and ROM have evolved over time, with innovations allowing for greater memory density, faster speeds, and easier reprogramming.
Modeling of DDR4 Memory and Advanced Verifications of DDR4 Memory Subsystem
Modeling of DDR4 Memory and Advanced Verifications of DDR4 Memory SubsystemIRJET Journal The document describes the modeling and verification of DDR4 memory systems. It discusses the objectives of building an accurate SystemVerilog model of a DDR4 memory that improves data rates compared to previous generations. The model is developed according to JEDEC DDR4 specifications and is verified against an existing memory controller model using simulation tools. The document provides details on DDR4 memory architecture and operation, including initialization procedures, command protocols, and verification scenarios to validate correct read and write functionality.
Jedex stec DRAM Module Market Overview
Jedex stec DRAM Module Market OverviewMichael Zhang This document provides an overview of the DRAM module market and discusses various module configurations for different applications. It describes the transition from DDR1 to DDR2 and upcoming shift to DDR3. Key markets discussed include personal computers, servers, networking equipment, and peripherals. For servers, it notes ongoing debate around using fully buffered DIMMs (FB-DIMMs) versus registered DIMMs (RDIMMs). New module formats like mini-RDIMMs and 72b SO-RDIMMs are presented as solutions for networking routers and other embedded applications.
Memory technologies
Memory technologiesChamila Wijayarathna This document discusses several types of memory technologies:
- DDR-DRAM can transfer data on both the rising and falling edges of a clock cycle, allowing it to transfer two data words per cycle.
- SDRAM interfaces with the system bus synchronously using a clock signal, allowing it to operate faster than asynchronous DRAM.
- FCRAM aims to reduce latency and increase bandwidth through architectural enhancements like three-stage row pipelining and fast access cores.
- QDR-DRAM can transfer up to four words per clock cycle by using two clocks, one each for read and write data.
DDR3 SDRAM : Notes
DDR3 SDRAM : NotesSubhajit Sahu DDR3 SDRAM is a type of synchronous dynamic random-access memory introduced in 2007, which offers higher data transfer rates and lower power consumption than its predecessors, DDR and DDR2. It features a maximum capacity of 16 GiB per DIMM and is not compatible with earlier RAM types due to different voltages and timings. The standard was succeeded by DDR4 in 2012, which provides even greater performance improvements.
05 internal memory
05 internal memoryAmmara Naseem 1. The document discusses different types of semiconductor memory including RAM, ROM, PROM, EPROM, EEPROM, and flash memory.
2. It describes the operation and structure of both dynamic RAM (DRAM) and static RAM (SRAM). DRAM uses capacitors to store bits and requires refreshing, while SRAM uses flip-flops and does not require refreshing.
3. The document also covers various RAM technologies including synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), Rambus DRAM (RDRAM), error correction codes, and cache DRAM.
Accelerix ISSCC 1998 Paper
Accelerix ISSCC 1998 PaperImagination Technologies This document describes an integrated graphics accelerator and frame buffer chip. It integrates DRAM, pixel processing units (PPUs), and serial output registers directly into the DRAM architecture to achieve high bandwidth of up to 33GB/s. The PPUs perform basic pixel operations like raster operations. They are tightly pitch-matched to the DRAM columns. This allows wide parallel access and acceleration of graphics operations like block moves. The chip is implemented in a 0.35um blended logic/DRAM process and includes 13.4Mb of DRAM, 160k gates of logic, and supports screen resolutions up to 1280x1024x8bpp.
Introducing the next generation memory DDR4
Introducing the next generation memory DDR4Simmtronics Infotech DDR4 memory offers advanced features for high-speed operation across various applications, including servers and consumer products, simplifying migration to an industry standard. It improves memory efficiency and bandwidth with its device architecture, which allows for separate operations through bank groups. Key benefits include enhanced performance for gaming and workstations, as well as lower power consumption for laptops and tablets.
DDR4_Device_Operations_Rev11_Oct_14-0.pdf
DDR4_Device_Operations_Rev11_Oct_14-0.pdfNaveen566675 - The document describes the functional description and operation of DDR4 SDRAM devices. It provides a simplified state diagram showing the various states of the device and commands to transition between states. It also describes initialization procedures, mode registers, command descriptions and timings.
- Sections are included on on-die termination, read/write operations and timings, refresh commands, self-refresh operation, power down modes, and other features like write leveling, calibration commands, and error handling mechanisms.
- The document also provides descriptions of 3D stacked DRAM functionality, commands, and operation that are similar but have some differences compared to planar DDR4 devices.
About TrueTime, Spanner, Clock synchronization, CAP theorem, Two-phase lockin...
About TrueTime, Spanner, Clock synchronization, CAP theorem, Two-phase lockin...Subhajit Sahu Truetime is a service that coordinates globally synchronized clocks to enable accurate time intervals for distributed systems, with applications in leader election and transaction commits in Google's Spanner database. Spanner, a globally available SQL database, leverages Truetime for external consistency and supports consistent snapshots, allowing it to maintain strong consistency during network partitions. The document also discusses various concepts such as clock synchronization, CAP theorem, and two-phase commit protocols, which are crucial for achieving consistent distributed systems.
Levelwise PageRank with Loop-Based Dead End Handling Strategy : SHORT REPORT ...
Levelwise PageRank with Loop-Based Dead End Handling Strategy : SHORT REPORT ...Subhajit Sahu The document discusses a levelwise pagerank computation method for processing graphs, enabling distributed analysis without per-iteration communication. It compares the performance of levelwise pagerank against traditional monolithic pagerank on both CPU and GPU, revealing that although levelwise is efficient on CPU, it faces slowdowns on GPU due to workload distribution issues. The experiments demonstrate varying performance impacts for edge insertions and deletions, highlighting the strengths and limitations of the levelwise approach.
More Related Content
Similar to GDDR4 SDRAM : Notes (20)
DDR4 SDRAM : Notes
DDR4 SDRAM : NotesSubhajit Sahu DDR4 SDRAM is the fourth generation of double data rate synchronous dynamic random-access memory, officially released in 2014, providing higher data rate transfer speeds and lower voltage requirements compared to its predecessor DDR3. It supports module capacities of up to 64 GiB and operates at a voltage of 1.2 V, offering significant improvements in performance and efficiency. DDR4 is not compatible with earlier RAM types due to differences in both signaling voltage and physical interface.
DDR, GDDR, HBM SDRAM Memory
DDR, GDDR, HBM SDRAM MemorySubhajit Sahu The document provides a comprehensive overview of various types of DRAM technologies, including DDR3, DDR4, and graphics memory (GDDR), detailing specifications such as voltage, speed, bandwidth, and compatibility. It also discusses ECC memory, high bandwidth memory (HBM), and non-volatile RAM technologies, highlighting their advantages and applications in different computing contexts. Additionally, the document covers aspects of memory module design, including pin configurations and memory timings relevant for performance optimization.
DDR, GDDR, HBM Memory : Presentation
DDR, GDDR, HBM Memory : PresentationSubhajit Sahu The document provides a detailed overview of various types of DDR SDRAM technologies, including DDR3, DDR4, GDDR, and High Bandwidth Memory (HBM), highlighting key specifications such as voltages, capacities, and speeds. It also discusses memory-related technologies such as error correction codes (ECC), memory dimensions, and the significance of specific memory features in different applications, particularly in servers and graphics. Furthermore, it mentions the evolution of memory interface technologies and the increasing demand for higher bandwidth and lower power consumption.
DDR SDRAMs
DDR SDRAMsPrankit Mishra DDR - SDRAMs are classified into different types including SDRAM, DDR1, DDR2, DDR3, and DDR4. SDRAM synchronizes itself with the CPU timing to allow for faster memory access. DDR1 allows for higher transfer rates through double pumping of the data bus. DDR2 further increases speeds through lower power usage and internal clock running at half the external clock rate. DDR3 and DDR4 continue to improve speeds and bandwidth through higher data transfer rates and lower voltage requirements. Each new generation is not compatible with previous types due to changes in signaling and interfaces.
Kernel Recipes 2019 - Marvels of Memory Auto-configuration (SPD)
Kernel Recipes 2019 - Marvels of Memory Auto-configuration (SPD)Anne Nicolas The document discusses the evolution of memory module configurations, transitioning from older formats like Parallel Presence Detect (PPD) to Serial Presence Detect (SPD) in DDR4 memory. It outlines the limitations of previous technologies and details SPD's implementation, including EEPROM storage specifics and various address mapping challenges. Additionally, it addresses Linux support for these memory configurations and proposes solutions for effective EEPROM management in DDR4 systems.
DDR SDRAM : Notes
DDR SDRAM : NotesSubhajit Sahu DDR SDRAM (Double Data Rate Synchronous Dynamic Random-Access Memory) is a class of memory integrated circuits used in computers, which allows for higher transfer rates compared to its predecessor, SDR SDRAM, through techniques like double pumping. Introduced in 1998, DDR has evolved through multiple generations (DDR2, DDR3, DDR4, and DDR5), with each generation offering improvements in speed, power consumption, and efficiency while being incompatible with previous versions. DDR SDRAM modules are available in various formats, including DIMMs for desktops and SO-DIMMs for laptops, and have specific voltage and configuration standards defined by JEDEC.
ROM (Rhehuiejead Only Mem67😁😁❤ory).pptx
ROM (Rhehuiejead Only Mem67😁😁❤ory).pptxSagniTolasa Read-Only Memory (ROM) is utilized for firmware storage due to its permanence, with modern types allowing for limited reprogramming. Dynamic Random Access Memory (DRAM) is a volatile memory that requires periodic refreshing, with various types improving speed and efficiency over time. Solid State Drives (SSDs) offer persistent data storage using integrated circuits, providing advantages over traditional hard drives despite being more expensive per unit of storage.
Memory system
Memory systemgourav kottawar The document discusses various types of computer memory technologies, including RAM types like DRAM, SRAM, DDR, DDR2, and DDR3. It explains the memory hierarchy from registers to cache to main memory to disks. Key points covered include how DRAM works using capacitors that must be periodically refreshed, advantages of SDRAM over regular DRAM like pipelining commands. Generations of DDR memory are compared in terms of clock speeds, data rates, and other features.
High Bandwidth Memory : Notes
High Bandwidth Memory : NotesSubhajit Sahu High Bandwidth Memory (HBM) is a high-speed stacked memory interface used in high-performance graphics cards and supercomputers. HBM achieves higher bandwidth than GDDR5 using 3D stacking of DRAM dies and through-silicon vias. The first HBM was produced in 2013, and the technology has since progressed through HBM2, HBM2E, and upcoming HBMnext standards, doubling bandwidth with each generation. HBM is used to provide massive memory bandwidth for applications such as graphics processing and AI.
Understanding and Testing DDR4 R-DIMM and LR-DIMM Technology
Understanding and Testing DDR4 R-DIMM and LR-DIMM TechnologyIntegrated Device Technology This webinar discusses the advancements in DDR4 RDIMM and LRDIMM technologies, comparing their architectures and benefits over DDR3. Notably, DDR4 LRDIMMs achieve better signal integrity with reduced loads on the motherboard compared to RDIMMs, leading to improved performance and scalability. The presentation covers data throughput capabilities, memory density, and command flow protocols, highlighting the innovations in DDR4's design for enhanced efficiency.
2011 DDR4 Mini Workshop.pdf
2011 DDR4 Mini Workshop.pdfssuser2a2430 DDR4 introduces new features such as bank grouping, cyclic redundancy check, and multi-purpose registers to improve performance and reliability over DDR3. It supports higher densities up to 16Gb and speeds up to 3.2Gbps while lowering the voltage. Training flows are also enhanced in DDR4 with the addition of internal voltage reference training, preamble training, and more options for data pattern testing using multi-purpose registers during initialization.
Memory And Storages
Memory And StoragesArsalan Qureshi RAM and ROM are two types of computer memory. RAM, or random-access memory, is volatile and used for temporary storage of programs and data that are actively being used. It allows information to be accessed randomly in constant time. ROM, or read-only memory, is non-volatile and used to store permanent programs and data. It can only be modified slowly or with difficulty. The two main types of RAM are SRAM and DRAM, while the main types of ROM include PROM, EPROM, EEPROM, and flash memory. Both RAM and ROM have evolved over time, with innovations allowing for greater memory density, faster speeds, and easier reprogramming.
Modeling of DDR4 Memory and Advanced Verifications of DDR4 Memory Subsystem
Modeling of DDR4 Memory and Advanced Verifications of DDR4 Memory SubsystemIRJET Journal The document describes the modeling and verification of DDR4 memory systems. It discusses the objectives of building an accurate SystemVerilog model of a DDR4 memory that improves data rates compared to previous generations. The model is developed according to JEDEC DDR4 specifications and is verified against an existing memory controller model using simulation tools. The document provides details on DDR4 memory architecture and operation, including initialization procedures, command protocols, and verification scenarios to validate correct read and write functionality.
Jedex stec DRAM Module Market Overview
Jedex stec DRAM Module Market OverviewMichael Zhang This document provides an overview of the DRAM module market and discusses various module configurations for different applications. It describes the transition from DDR1 to DDR2 and upcoming shift to DDR3. Key markets discussed include personal computers, servers, networking equipment, and peripherals. For servers, it notes ongoing debate around using fully buffered DIMMs (FB-DIMMs) versus registered DIMMs (RDIMMs). New module formats like mini-RDIMMs and 72b SO-RDIMMs are presented as solutions for networking routers and other embedded applications.
Memory technologies
Memory technologiesChamila Wijayarathna This document discusses several types of memory technologies:
- DDR-DRAM can transfer data on both the rising and falling edges of a clock cycle, allowing it to transfer two data words per cycle.
- SDRAM interfaces with the system bus synchronously using a clock signal, allowing it to operate faster than asynchronous DRAM.
- FCRAM aims to reduce latency and increase bandwidth through architectural enhancements like three-stage row pipelining and fast access cores.
- QDR-DRAM can transfer up to four words per clock cycle by using two clocks, one each for read and write data.
DDR3 SDRAM : Notes
DDR3 SDRAM : NotesSubhajit Sahu DDR3 SDRAM is a type of synchronous dynamic random-access memory introduced in 2007, which offers higher data transfer rates and lower power consumption than its predecessors, DDR and DDR2. It features a maximum capacity of 16 GiB per DIMM and is not compatible with earlier RAM types due to different voltages and timings. The standard was succeeded by DDR4 in 2012, which provides even greater performance improvements.
05 internal memory
05 internal memoryAmmara Naseem 1. The document discusses different types of semiconductor memory including RAM, ROM, PROM, EPROM, EEPROM, and flash memory.
2. It describes the operation and structure of both dynamic RAM (DRAM) and static RAM (SRAM). DRAM uses capacitors to store bits and requires refreshing, while SRAM uses flip-flops and does not require refreshing.
3. The document also covers various RAM technologies including synchronous DRAM (SDRAM), double data rate SDRAM (DDR SDRAM), Rambus DRAM (RDRAM), error correction codes, and cache DRAM.
Accelerix ISSCC 1998 Paper
Accelerix ISSCC 1998 PaperImagination Technologies This document describes an integrated graphics accelerator and frame buffer chip. It integrates DRAM, pixel processing units (PPUs), and serial output registers directly into the DRAM architecture to achieve high bandwidth of up to 33GB/s. The PPUs perform basic pixel operations like raster operations. They are tightly pitch-matched to the DRAM columns. This allows wide parallel access and acceleration of graphics operations like block moves. The chip is implemented in a 0.35um blended logic/DRAM process and includes 13.4Mb of DRAM, 160k gates of logic, and supports screen resolutions up to 1280x1024x8bpp.
Introducing the next generation memory DDR4
Introducing the next generation memory DDR4Simmtronics Infotech DDR4 memory offers advanced features for high-speed operation across various applications, including servers and consumer products, simplifying migration to an industry standard. It improves memory efficiency and bandwidth with its device architecture, which allows for separate operations through bank groups. Key benefits include enhanced performance for gaming and workstations, as well as lower power consumption for laptops and tablets.
DDR4_Device_Operations_Rev11_Oct_14-0.pdf
DDR4_Device_Operations_Rev11_Oct_14-0.pdfNaveen566675 - The document describes the functional description and operation of DDR4 SDRAM devices. It provides a simplified state diagram showing the various states of the device and commands to transition between states. It also describes initialization procedures, mode registers, command descriptions and timings.
- Sections are included on on-die termination, read/write operations and timings, refresh commands, self-refresh operation, power down modes, and other features like write leveling, calibration commands, and error handling mechanisms.
- The document also provides descriptions of 3D stacked DRAM functionality, commands, and operation that are similar but have some differences compared to planar DDR4 devices.
More from Subhajit Sahu (20)
About TrueTime, Spanner, Clock synchronization, CAP theorem, Two-phase lockin...
About TrueTime, Spanner, Clock synchronization, CAP theorem, Two-phase lockin...Subhajit Sahu Truetime is a service that coordinates globally synchronized clocks to enable accurate time intervals for distributed systems, with applications in leader election and transaction commits in Google's Spanner database. Spanner, a globally available SQL database, leverages Truetime for external consistency and supports consistent snapshots, allowing it to maintain strong consistency during network partitions. The document also discusses various concepts such as clock synchronization, CAP theorem, and two-phase commit protocols, which are crucial for achieving consistent distributed systems.
Levelwise PageRank with Loop-Based Dead End Handling Strategy : SHORT REPORT ...
Levelwise PageRank with Loop-Based Dead End Handling Strategy : SHORT REPORT ...Subhajit Sahu The document discusses a levelwise pagerank computation method for processing graphs, enabling distributed analysis without per-iteration communication. It compares the performance of levelwise pagerank against traditional monolithic pagerank on both CPU and GPU, revealing that although levelwise is efficient on CPU, it faces slowdowns on GPU due to workload distribution issues. The experiments demonstrate varying performance impacts for edge insertions and deletions, highlighting the strengths and limitations of the levelwise approach.
Adjusting Bitset for graph : SHORT REPORT / NOTES
Adjusting Bitset for graph : SHORT REPORT / NOTESSubhajit Sahu The document discusses the inefficiencies of using Compressed Sparse Row (CSR) representation for dynamic graphs, particularly in terms of memory access during edge addition and deletion. Different data structures for representing edge-lists, such as sorted and unsorted bitsets, were evaluated through experiments conducted on real-world temporal graphs, revealing performance variances depending on the structure and operations performed. The results indicate that sorted bitsets often outperform unsorted ones for specific tasks, while small-vector optimizations were found to provide minimal benefits due to memory allocation issues.
Algorithmic optimizations for Dynamic Levelwise PageRank (from STICD) : SHORT...
Algorithmic optimizations for Dynamic Levelwise PageRank (from STICD) : SHORT...Subhajit Sahu The document discusses various algorithmic optimizations for the Pagerank algorithm, focusing on improving efficiency by reducing iteration times and optimizing computations. It evaluates different approaches, such as the push and pull methods, along with various techniques like skipping converged and identical vertices, and examining performance through a series of experiments using C++ implementations on diverse graph types. The results highlight that while some methods provide speedups, the effectiveness varies depending on graph characteristics and specific optimization strategies employed.
Adjusting primitives for graph : SHORT REPORT / NOTES
Adjusting primitives for graph : SHORT REPORT / NOTESSubhajit Sahu The document discusses performance evaluations of various graph algorithms, specifically focusing on vector operations such as multiplication and summation using different execution modes including sequential, OpenMP, and CUDA. It compares the performance of using different storage types like float and bfloat16, as well as various CUDA launch configurations. Additionally, it explores strategies for in-place operations and their impact on performance metrics.
Experiments with Primitive operations : SHORT REPORT / NOTES
Experiments with Primitive operations : SHORT REPORT / NOTESSubhajit Sahu The document discusses the performance comparisons of vector multiplication and element summation using different execution modes including sequential, OpenMP, and CUDA. It evaluates various storage types like float and bfloat16, as well as different launch configurations for CUDA. The analysis also includes in-place strategies and various techniques for optimizing vector element sums in CUDA.
PageRank Experiments : SHORT REPORT / NOTES
PageRank Experiments : SHORT REPORT / NOTESSubhajit Sahu The document details various performance evaluations and comparisons of PageRank algorithms using different data types (float, bfloat16) and methods (pull, csr) in different contexts such as static and dynamic graphs. It includes analyses of performance improvements through adjusting parameters like damping factors, utilizing OpenMP, and CUDA configurations. Additionally, it discusses the benefits of optimizing sequential and monolithic approaches for vector operations in both static and dynamic settings.
Algorithmic optimizations for Dynamic Monolithic PageRank (from STICD) : SHOR...
Algorithmic optimizations for Dynamic Monolithic PageRank (from STICD) : SHOR...Subhajit Sahu The document discusses algorithmic optimizations for the PageRank algorithm, focusing on techniques to reduce work per iteration and the number of iterations, which include skipping converged nodes, in-identical vertices, and optimizing chain processing. It compares different implementations of PageRank (push vs pull methods) across various graph types using performance metrics, implemented in C++ with specific hardware and software configurations. The findings emphasize that while some optimizations provide speed improvements, others do not yield significant benefits, with the pull method generally being more efficient than the push method.
Adjusting OpenMP PageRank : SHORT REPORT / NOTES
Adjusting OpenMP PageRank : SHORT REPORT / NOTESSubhajit Sahu The document explores optimizing the PageRank algorithm for massive graphs using OpenMP on systems with shared memory and multiple CPUs, leveraging both uniform and hybrid approaches. Experiments compare contribution-push and contribution-pull methods, revealing that although the pull method is generally faster, performance can vary based on graph structure. Additionally, the OpenMP implementation shows benefits over sequential methods, but NVGraph outperforms OpenMP due to GPU utilization.
word2vec, node2vec, graph2vec, X2vec: Towards a Theory of Vector Embeddings o...
word2vec, node2vec, graph2vec, X2vec: Towards a Theory of Vector Embeddings o...Subhajit Sahu This document discusses the theory and practice of vector embeddings for structured data, highlighting the importance of such representations in machine learning and data analysis. It reviews various embedding methods, including hand-crafted feature vectors and learned embeddings, while emphasizing the need for theoretical perspectives, particularly focusing on the Weisfeiler-Lehman algorithm and homomorphism vectors. The paper also identifies key theoretical questions related to expressivity, complexity, and dimensions of latent spaces in the context of graph and relational structure embeddings.
DyGraph: A Dynamic Graph Generator and Benchmark Suite : NOTES
DyGraph: A Dynamic Graph Generator and Benchmark Suite : NOTESSubhajit Sahu The document presents Dygraph, a dynamic graph generator and benchmark suite aimed at enhancing the evaluation of dynamic graph algorithms, crucial for applications in logistics, finance, and healthcare. It generates synthetic datasets that closely mimic real-world dynamic graph properties, overcoming the limitations of existing datasets by providing a versatile tool for graph researchers. The generator allows for the creation and modification of dynamic graphs, supporting research on high-performance dynamic graph processing.
Shared memory Parallelism (NOTES)
Shared memory Parallelism (NOTES)Subhajit Sahu This document discusses shared memory parallelism, highlighting its benefits and challenges, such as access time degradation and data coherence issues. It contrasts shared memory with multi-process parallelism and introduces heterogeneous multiprocessing, particularly in mobile devices, which utilize cores with varying performance and power profiles. The document examines programming complexities and synchronization issues related to different memory architectures and processing strategies.
A Dynamic Algorithm for Local Community Detection in Graphs : NOTES
A Dynamic Algorithm for Local Community Detection in Graphs : NOTESSubhajit Sahu The document presents a dynamic algorithm for local community detection in graphs, specifically focused on seed set expansion, which adapts to changes in graph structure such as the insertion and removal of edges. The algorithm improves performance compared to static methods by enabling incremental updates, achieving significant speedups of up to 600 times while maintaining high-quality community outputs. This work represents a novel contribution to the field as it is the first dynamic approach for greedy seed set expansion, addressing the challenges posed by evolving datasets.
Scalable Static and Dynamic Community Detection Using Grappolo : NOTES
Scalable Static and Dynamic Community Detection Using Grappolo : NOTESSubhajit Sahu The document presents a new approach to community detection in graphs, focusing on both static and dynamic scenarios, particularly in response to the DARPA HIVE graph challenge. It introduces a parallelized version of the widely-used Louvain method, implemented in a software library called Grappolo, which utilizes various heuristics to enhance performance and solution quality. The authors report experimental results demonstrating the effectiveness of their methods on large-scale data, contributing to scalable community detection techniques applicable in real-world scenarios.
Application Areas of Community Detection: A Review : NOTES
Application Areas of Community Detection: A Review : NOTESSubhajit Sahu Bu çalışma, karmaşık ağlar içindeki topluluk yapısını ortaya çıkarmak ve topluluk tespit yöntemlerinin taksonomisini incelemek amacıyla yapılmıştır. Topluluk tespiti, statik veya dinamik ağlar üzerinde yürütülebilir ve suç tespiti, dolandırıcılık, öneri sistemleri gibi çeşitli uygulama alanlarına sahiptir. Araştırmalara ve geliştiricilere topluluk tespiti alanında hızlı bir başlangıç sağlamak için güncel bir inceleme sunmaktadır.
Community Detection on the GPU : NOTES
Community Detection on the GPU : NOTESSubhajit Sahu The document presents a new scalable GPU algorithm based on the Louvain method for community detection, which parallelizes access to individual edges and improves load balancing by adjusting the number of threads assigned to nodes according to their degree. Extensive experiments demonstrate that this algorithm achieves speedups of up to 270 times compared to the sequential version while maintaining solution quality, outperforming other shared memory implementations. The paper also reviews previous parallel implementations and outlines the algorithm's structure, memory usage, and performance results.
Survey for extra-child-process package : NOTES
Survey for extra-child-process package : NOTESSubhajit Sahu The document outlines a process for executing child commands using promises in a programming context. It highlights various methods such as `exec` and `spawn` for handling command execution, along with managing standard output and error streams. The focus is on asynchronous handling of appointments scheduled for 26.4.2022.
Dynamic Batch Parallel Algorithms for Updating PageRank : POSTER
Dynamic Batch Parallel Algorithms for Updating PageRank : POSTERSubhajit Sahu This paper presents two algorithms for efficiently computing PageRank on dynamically updating graphs in a batched manner: DynamicLevelwisePR and DynamicMonolithicPR. DynamicLevelwisePR processes vertices level-by-level based on strongly connected components and avoids recomputing converged vertices on the CPU. DynamicMonolithicPR uses a full power iteration approach on the GPU that partitions vertices by in-degree and skips unaffected vertices. Evaluation on real-world graphs shows the batched algorithms provide speedups of up to 4000x over single-edge updates and outperform other state-of-the-art dynamic PageRank algorithms.
Abstract for IPDPS 2022 PhD Forum on Dynamic Batch Parallel Algorithms for Up...
Abstract for IPDPS 2022 PhD Forum on Dynamic Batch Parallel Algorithms for Up...Subhajit Sahu This document presents two new parallel algorithms, dynamiclevelwisepr and dynamicmonolithicpr, for efficiently updating pagerank values in dynamic graphs after batch edge insertions and deletions. Experimental studies show that both algorithms significantly outperform static pagerank methods on CPUs and GPUs, with dynamicmonolithicpr being more suitable for GPU usage. The findings highlight the algorithms' efficiency in processing large graphs and improving computation speed through optimized memory locality and workload balance.
Fast Incremental Community Detection on Dynamic Graphs : NOTES
Fast Incremental Community Detection on Dynamic Graphs : NOTESSubhajit Sahu This document introduces two algorithms, basicdyn and fastdyn, for incremental community detection in dynamic graphs, which update clusters as the graph changes. The algorithms utilize greedy, modularity-maximizing techniques to efficiently adapt to structural community changes and demonstrate performance improvements on synthetic graph tests. The findings suggest that fastdyn, in particular, enhances computational speed while maintaining accuracy in detecting community changes.
Ad
Recently uploaded (20)
原版一样(UAH毕业证书)德国海德堡大学毕业证多少钱
原版一样(UAH毕业证书)德国海德堡大学毕业证多少钱taqyed UAH海德堡大学毕业证书多少钱【q薇1954292140】1:1原版海德堡大学毕业证+UAH成绩单【q薇1954292140】完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。
【主营项目】
一、工作未确定，回国需先给父母、亲戚朋友看下文凭的情况，办理毕业证|办理文凭: 买大学毕业证|买大学文凭【q薇1954292140】学位证明书如何办理申请？
二、回国进私企、外企、自己做生意的情况，这些单位是不查询毕业证真伪的，而且国内没有渠道去查询国外文凭的真假，也不需要提供真实教育部认证。鉴于此，办理海德堡大学毕业证|UAH成绩单【q薇1954292140】国外大学毕业证, 文凭办理, 国外文凭办理, 留信网认证
三.材料咨询办理、认证咨询办理请加学历顾问【微信:1954292140】毕业证购买指大学文凭购买，毕业证办理和文凭办理。学院文凭定制，学校原版文凭补办，扫描件文凭定做，100%文凭复刻。经常操作的国家有美国毕业证，英国毕业证，澳洲毕业证，加拿大毕业证，以及德国毕业证，法国毕业证、荷兰毕业证、瑞士毕业证、日本毕业证、韩国毕业证、新西兰毕业证、新加坡毕业证、泰国毕业证、马来西亚毕业证等。包括了本科毕业证，硕士毕业证，博士毕业证及高中毕业证。
最新版意大利巴里理工大学毕业证（BARI毕业证书）原版定制
最新版意大利巴里理工大学毕业证（BARI毕业证书）原版定制taqyea 2025原版巴里理工大学毕业证书pdf电子版【q薇1954292140】意大利毕业证办理BARI巴里理工大学毕业证书多少钱？【q薇1954292140】海外各大学Diploma版本，因为疫情学校推迟发放证书、证书原件丢失补办、没有正常毕业未能认证学历面临就业提供解决办法。当遭遇挂科、旷课导致无法修满学分，或者直接被学校退学，最后无法毕业拿不到毕业证。此时的你一定手足无措，因为留学一场，没有获得毕业证以及学历证明肯定是无法给自己和父母一个交代的。
【复刻巴里理工大学成绩单信封,Buy Politecnico di BARI Transcripts】
购买日韩成绩单、英国大学成绩单、美国大学成绩单、澳洲大学成绩单、加拿大大学成绩单（q微1954292140）新加坡大学成绩单、新西兰大学成绩单、爱尔兰成绩单、西班牙成绩单、德国成绩单。成绩单的意义主要体现在证明学习能力、评估学术背景、展示综合素质、提高录取率，以及是作为留信认证申请材料的一部分。
巴里理工大学成绩单能够体现您的的学习能力，包括巴里理工大学课程成绩、专业能力、研究能力。（q微1954292140）具体来说，成绩报告单通常包含学生的学习技能与习惯、各科成绩以及老师评语等部分，因此，成绩单不仅是学生学术能力的证明，也是评估学生是否适合某个教育项目的重要依据！
我们承诺采用的是学校原版纸张（原版纸质、底色、纹路）我们工厂拥有全套进口原装设备，特殊工艺都是采用不同机器制作，仿真度基本可以达到100%，所有成品以及工艺效果都可提前给客户展示，不满意可以根据客户要求进行调整，直到满意为止！
【主营项目】
一、工作未确定，回国需先给父母、亲戚朋友看下文凭的情况，办理毕业证|办理文凭: 买大学毕业证|买大学文凭【q薇1954292140】巴里理工大学学位证明书如何办理申请？
二、回国进私企、外企、自己做生意的情况，这些单位是不查询毕业证真伪的，而且国内没有渠道去查询国外文凭的真假，也不需要提供真实教育部认证。鉴于此，办理意大利成绩单巴里理工大学毕业证【q薇1954292140】国外大学毕业证, 文凭办理, 国外文凭办理, 留信网认证
办理方法澳洲硕士毕业证澳大利亚国家戏剧艺术学院文凭证书NIDA学费单
办理方法澳洲硕士毕业证澳大利亚国家戏剧艺术学院文凭证书NIDA学费单Taqyea 1:1原版澳大利亚国家戏剧艺术学院毕业证+NIDA成绩单【Q微:1954 292 140】鉴于此，NIDAdiploma澳大利亚国家戏剧艺术学院挂科处理解决方案NIDA毕业证成绩单专业服务学历认证【Q微:1954 292 140】办理教育部学历认证，留学回国证明，澳大利亚国家戏剧艺术学院毕业证、澳大利亚国家戏剧艺术学院成绩单、澳大利亚国家戏剧艺术学院文凭（留信学历认证+永久存档查询）办理本科+硕士+博士毕业证成绩单学历认证，我们一直是留学生的首选，质量行业第一，诚信可靠。
【澳大利亚国家戏剧艺术学院成绩单一站式办理专业技术完美呈现National Art School Transcripts】
购买日韩成绩单、英国大学成绩单、美国大学成绩单、澳洲大学成绩单、加拿大大学成绩单（q微1954292140）新加坡大学成绩单、新西兰大学成绩单、爱尔兰成绩单、西班牙成绩单、德国成绩单。成绩单的意义主要体现在证明学习能力、评估学术背景、展示综合素质、提高录取率，以及是作为留信认证申请材料的一部分。
澳大利亚国家戏剧艺术学院成绩单能够体现您的的学习能力，包括澳大利亚国家戏剧艺术学院课程成绩、专业能力、研究能力。（q微1954292140）具体来说，成绩报告单通常包含学生的学习技能与习惯、各科成绩以及老师评语等部分，因此，成绩单不仅是学生学术能力的证明，也是评估学生是否适合某个教育项目的重要依据！
【主营项目】
一.毕业证【q微1954292140】成绩单、使馆认证、教育部认证、雅思托福成绩单、学生卡等！
二.真实使馆公证(即留学回国人员证明,不成功不收费)
三.真实教育部学历学位认证（教育部存档！教育部留服网站永久可查）
四.办理各国各大学文凭(一对一专业服务,可全程监控跟踪进度)
Derivites constracts and its implications and uses
Derivites constracts and its implications and usesicuphamid Derivites constracts and its implications and uses
Full_MDM_PC_Compromise_Report_Presentation_Final_WithVisuals.pptx
Full_MDM_PC_Compromise_Report_Presentation_Final_WithVisuals.pptxjasongriewing Details of my compromised devices
英国哈珀亚当斯大学学历认证查询{HAU学费单HAU成绩单复刻}原版制作
英国哈珀亚当斯大学学历认证查询{HAU学费单HAU成绩单复刻}原版制作taqyed HAU哈珀亚当斯大学毕业证书多少钱【q薇1954292140】1:1原版哈珀亚当斯大学毕业证+HAU成绩单【q薇1954292140】完美还原海外各大学毕业材料上的工艺：水印，阴影底纹，钢印LOGO烫金烫银，LOGO烫金烫银复合重叠。文字图案浮雕、激光镭射、紫外荧光、温感、复印防伪等防伪工艺。
【主营项目】
一、工作未确定，回国需先给父母、亲戚朋友看下文凭的情况，办理毕业证|办理文凭: 买大学毕业证|买大学文凭【q薇1954292140】学位证明书如何办理申请？
二、回国进私企、外企、自己做生意的情况，这些单位是不查询毕业证真伪的，而且国内没有渠道去查询国外文凭的真假，也不需要提供真实教育部认证。鉴于此，办理哈珀亚当斯大学毕业证|HAU成绩单【q薇1954292140】国外大学毕业证, 文凭办理, 国外文凭办理, 留信网认证
三.材料咨询办理、认证咨询办理请加学历顾问【微信:1954292140】毕业证购买指大学文凭购买，毕业证办理和文凭办理。学院文凭定制，学校原版文凭补办，扫描件文凭定做，100%文凭复刻。经常操作的国家有美国毕业证，英国毕业证，澳洲毕业证，加拿大毕业证，以及德国毕业证，法国毕业证、荷兰毕业证、瑞士毕业证、日本毕业证、韩国毕业证、新西兰毕业证、新加坡毕业证、泰国毕业证、马来西亚毕业证等。包括了本科毕业证，硕士毕业证，博士毕业证及高中毕业证。
ChatGPT_Presentation_Laraib (1) Based on document editing and rlhf experiment...
ChatGPT_Presentation_Laraib (1) Based on document editing and rlhf experiment...rajveerverma425 Best rlhf work and its importance onn chatgpt
Ad
GDDR4 SDRAM : Notes
- 1. 02/10/2020 GDDR4 SDRAM - Wikipedia https://en.wikipedia.org/wiki/GDDR4_SDRAM 1/3 GDDR4 SDRAM GDDR4 SDRAM, an abbreviation for Graphics Double Data Rate 4 Synchronous Dynamic Random- Access Memory, is a type of graphics card memory specified by the JEDEC Semiconductor Memory Standard.[1][2] It is a rival medium to Rambus's XDR DRAM. GDDR4 is based on DDR3 SDRAM technology and was intended to replace the DDR2-based GDDR3, but it ended up being replaced by GDDR5 within a year. History Technologies Adoption See also References External links On October 26, 2005, Samsung announced that it developed the first GDDR4 memory, a 256- Mbit chip running at 2.5 Gbit/s. Samsung also revealed plans to sample and mass-produce GDDR4 SDRAM rated at 2.8 Gbit/s per pin.[3] In 2005, Hynix developed the first 512-Mbit GDDR4 memory chip.[4] On February 14, 2006, Samsung announced the development of 32-bit 512-Mbit GDDR4 SDRAM capable of transferring 3.2 Gbit/s per pin, or 12.8 GB/s for the module.[5] On July 5, 2006, Samsung announced the mass-production of 32-bit 512-Mbit GDDR4 SDRAM rated at 2.4 Gbit/s per pin, or 9.6 GB/s for the module. Although designed to match the performance of XDR DRAM on high-pin-count memory, it would not be able to match XDR performance on low-pin-count designs.[6] On February 9, 2007, Samsung announced mass-production of 32-bit 512-Mbit GDDR4 SDRAM, rated at 2.8 Gbit/s per pin, or 11.2 GB/s per module. This module was used for some AMD cards.[7] On February 23, 2007, Samsung announced 32-bit 512-Mbit GDDR4 SDRAM rated at 4.0 Gbit/s per pin or 16 GB/s for the module and expects the memory to appear on commercially available graphics cards by the end of year 2007.[8] GDDR4 SDRAM introduced DBI (Data Bus Inversion) and Multi-Preamble to reduce data transmission delay. Prefetch was increased from 4 to 8 bits. The maximum number of memory banks for GDDR4 has been increased to 8. To achieve the same bandwidth as GDDR3 SDRAM, the GDDR4 core runs at half the performance of a GDDR3 core of the same raw bandwidth. Core voltage was decreased to 1.5 V. Data Bus Inversion adds an additional active-low DBI# pin to the address/command bus and each byte of data. If there are at more than four 0 bits in the data byte, the byte is inverted and the DBI# signal transmitted low. In this way, the number of 0 bits across all nine pins is limited to four.[9]:9 This reduces power consumption and ground bounce. Contents History Technologies
- 2. 02/10/2020 GDDR4 SDRAM - Wikipedia https://en.wikipedia.org/wiki/GDDR4_SDRAM 2/3 On the signaling front, GDDR4 expands the chip I/O buffer to 8 bits per two cycles, allowing for greater sustained bandwidth during burst transmission, but at the expense of significantly increased CAS latency (CL), determined mainly by the double reduced count of the address/command pins and half-clocked DRAM cells, compared to GDDR3. The number of addressing pins was reduced to half that of the GDDR3 core, and were used for power and ground, which also increases latency. Another advantage of GDDR4 is power efficiency: running at 2.4 Gbit/s, it uses 45% less power when compared to GDDR3 chips running at 2.0 Gbit/s. In Samsung's GDDR4 SDRAM datasheet, it was referred as 'GDDR4 SGRAM', or 'Graphics Double Data Rate version 4 Synchronous Graphics RAM'. However, the essential block write feature is not available, so it is not classified as SGRAM. The video memory manufacturer Qimonda (formerly Infineon Memory Products division) has stated it will "skip" the development of GDDR4, and move directly to GDDR5.[10] List of device bandwidths 1. "Standards & Documents Search: sgram" (http://www.jedec.org/standards-documents/results/SG RAM). www.jedec.org. Retrieved 9 September 2013. 2. "Standards & Documents Search: gddr4" (http://www.jedec.org/standards-documents/results/GD DR4). www.jedec.org. Retrieved 9 September 2013. 3. "Samsung Electronics Develops Industry's First Ultra-Fast GDDR4 Graphics DRAM" (https://ww w.samsung.com/semiconductor/insights/news-events/samsung-electronics-develops-industrys-fir st-ultra-fast-gddr4-graphics-dram/). Samsung Semiconductor. Samsung. October 26, 2005. Retrieved 8 July 2019. 4. "History: 2000s" (https://www.skhynix.com/eng/about/history2000.jsp). SK Hynix. Retrieved 8 July 2019. 5. Samsung Develops Ultra-fast Graphics Memory: A More Advanced GDDR4 at Higher Density (htt p://www.samsung.com/Products/Semiconductor/News/GraphicsMemory/category_GraphicsMem ory_20060214_0000233753.htm) 6. Samsung sends GDDR4 graphics memory into mass production (https://web.archive.org/web/200 60706142817/http://www.tgdaily.com/2006/07/05/samsung_gddr4/) 7. Samsung releases fastest GDDR-4 SGRAM (http://www.theinquirer.net/default.aspx?article=3755 9) Archived (https://web.archive.org/web/20070212033434/http://theinquirer.net/default.aspx?artic le=37559) 2007-02-12 at the Wayback Machine 8. Samsung accelerates graphics memory to 2000 MHz (https://web.archive.org/web/20070225083 354/http://www.tgdaily.com/2007/02/23/samsung_gddr/) 9. Choi, J.S. (2011). DDR4 Mini Workshop (https://www.jedec.org/sites/default/files/JS_Choi_DDR4 _miniWorkshop.pdf#page=9) (PDF). Server Memory Forum 2011. This presentation is about DDR4 rather than GDDR4, but both use data bus inversion. 10. Softpedia report (http://news.softpedia.com/news/Qimonda-Plans-GDDR5-50282.shtml) X-Bit Labs (GDDR4 closing in) (https://web.archive.org/web/20150128201329/http://www.xbitlabs. com/news/memory/display/20040505122429.html) Adoption See also References External links
- 3. 02/10/2020 GDDR4 SDRAM - Wikipedia https://en.wikipedia.org/wiki/GDDR4_SDRAM 3/3 X-Bit Labs (GDDR4 achieving 3.2 GHz) (https://web.archive.org/web/20141228073217/http://ww w.xbitlabs.com/news/memory/display/20060214062714.html) DailyTech (ATI X1950 Now September 14) (https://web.archive.org/web/20131203095557/http://w ww.dailytech.com/article.aspx?newsid=3781) DailyTech (ATI Radeon X1950 Announced) (https://web.archive.org/web/20131203100000/http:// www.dailytech.com/article.aspx?newsid=3446) (Samsung Shipping Production GDDR4) (https://web.archive.org/web/20131203100546/http://ww w.dailytech.com/article.aspx?newsid=3162) Samsung Mass Producing Most Advanced Graphics Memory: GDDR4, press release (http://www. samsung.com/Products/Semiconductor/News/GraphicsMemory/category_GraphicsMemory_2006 0705_0000273583.htm) Retrieved from "https://en.wikipedia.org/w/index.php?title=GDDR4_SDRAM&oldid=981033993" This page was last edited on 29 September 2020, at 21:52 (UTC). Text is available under the Creative Commons Attribution-ShareAlike License; additional terms may apply. By using this site, you agree to the Terms of Use and Privacy Policy. Wikipedia® is a registered trademark of the Wikimedia Foundation, Inc., a non-profit organization.