Lecture-7 : Semiconductor Power Switching Devices-4
4 likes4,388 views
This document discusses the structure, operation, and characteristics of bipolar junction transistors (BJTs) used as power switching devices. It describes the common collector-emitter (CE) configuration used for power BJTs and explains how the output characteristics and switching times are affected by the base current waveform. Common techniques like Darlington connection, Baker's clamping circuit, and opto-coupler isolation are summarized. The specifications of an example power BJT and its limitations compared to other power devices like MOSFETs and IGBTs are outlined. The next lecture will cover additional power semiconductor switching devices used in power electronics.
1 of 19
Downloaded 469 times
![BJT as a Power Switching Device
CE
V
VBE
RB
VCB
IE
VCE 1 VCE 2
VBE
+
− VBB
IB
IC
IB
RC
VCC
+
−
+
−
(b)(a)
0
B
E
+
−
+
−
>
C
CE configuration is always used as it offers high input
impedance and higher current gain.
When transistor is on IC = ICS = [VCC −VCE(sat)]/RC.
IBS = ICS/β is the base current that just turns on the BJT.
For faster turn on usually we make IB > IBS.
R S Ananda Murthy Semiconductor Power Switching Devices-4](https://image.slidesharecdn.com/l7-semiconductor-power-switching-devices-4-130929140022-phpapp02/85/Lecture-7-Semiconductor-Power-Switching-Devices-4-3-320.jpg)
Ad
Recommended
Lecture-5 : Semiconductor Power Switching Devices-2
Lecture-5 : Semiconductor Power Switching Devices-2rsamurti The document discusses the characteristics and operational principles of Silicon Controlled Rectifiers (SCR), including their turn-on and turn-off mechanisms. It explains the factors influencing SCR operation, gate characteristics, and provides insights on protecting SCRs using snubber circuits. Additionally, it includes specifications for BT145 thyristors and highlights the upcoming lecture on other power semiconductor switching devices.
Lecture-4 : Semiconductor Power Switching Devices-1
Lecture-4 : Semiconductor Power Switching Devices-1rsamurti This document discusses power semiconductor diodes and their use as switches. It describes the ideal characteristics of a switch and compares them to practical switches. There are different types of power diodes classified based on their control, controllability, conduction, and blocking properties. The key power loss mechanisms in a switch are also explained. Different types of power diodes like standard recovery, fast recovery, Schottky, and silicon carbide diodes are described along with their recovery times and applications. Diode packages and rectifier modules are shown. The next lecture will cover more power semiconductor switching devices.
Power electronics switching circuit
Power electronics switching circuitNitesh Jha This document discusses using a TRIAC and optoisolator to control 220V AC loads from an Arduino board. It explains that a TRIAC can be used to control AC power by turning on and off at different points of the sine wave. An optoisolator like the MOC3041 provides isolation between the Arduino and power circuit to prevent damage. It describes how the optoisolator works, using a LED to trigger the TRIAC at zero crossings. Sample circuit diagrams show how to connect the TRIAC, optoisolator, and load. Calculations for snubber resistors and capacitors to prevent false triggering are also covered.
Power electronics
Power electronicsFemi Prince This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like GTOs, IGBTs, MOSFETs are described along with their structures, characteristics and examples. The document concludes with emerging devices like SITs, SITHs, MCTs and IGCTs.
Chapter 6 power electronic-devices
Chapter 6 power electronic-devicesmkazree The document discusses various types of motor drives used in power electronics. It describes different power switches used in power electronic circuits like diodes, thyristors, TRIACs, IGBTs, and provides their characteristics. It also summarizes different methods of speed control for DC motors like armature voltage control, field flux control and armature resistance control. For AC induction motors, it discusses speed control methods like pole changing, stator voltage control, supply frequency control and rotor resistance control.
Power Electronics-Introduction
Power Electronics-Introductionsangeetha rakhi The document presents an overview of power electronics, focusing on the application of power semiconductor devices for electric power control and conversion. It covers various types of semiconductor devices including thyristors, transistors, and diodes, along with their characteristics, applications, and different power electronic circuits. Additionally, it discusses the classification of devices based on their operational characteristics and highlights peripheral effects associated with power converters.
L4 applications-of-power-electronics-130715221937-phpapp01
L4 applications-of-power-electronics-130715221937-phpapp01neomindx This document discusses power semiconductor diodes and their use as switches. It describes the ideal characteristics of a switch and compares them to practical switches. There are different types of power diodes classified based on their control, controllability, conduction, and blocking properties. The key power loss mechanisms in a switch are also summarized. Different types of power diodes like standard recovery, fast recovery, Schottky, and silicon carbide diodes are described along with their recovery times and applications. Diode packages and rectifier modules are shown. The next lecture will cover more power semiconductor switching devices.
Vimal
VimalBalaji Cricket This document provides an overview of power electronic devices. It begins with an introduction to power electronic devices and their features. It then discusses uncontrolled devices like power diodes and their characteristics. It covers half-controlled devices like thyristors and their operation. Fully-controlled devices like IGBTs, MOSFETs, and GTOs are described next along with their structures and characteristics. The document concludes with emerging devices like SITs, SITHs, MCTs, and IGCTs.
Ppt on power electronics
Ppt on power electronicsShivani Mishra The document provides an overview of power electronics components and their evolution over time. It begins with early rectifier technologies like mercury-arc and thyratron tubes. It then discusses the transition to modern solid-state components like transistors, thyristors, and power transistors. Key power electronics devices like power diodes, MOSFETs, IGBTs, and thyristors are explained. DC-DC converters and their operating modes are also summarized.
Variable Regulated Power Supply
Variable Regulated Power SupplyBhanu Bhawesh This document describes the design and construction of a variable regulated power supply circuit. The circuit uses a transformer, rectifier, filter capacitor and adjustable linear regulator to convert household AC power into a continuously adjustable DC output between 1.2 and 30 volts. Key components include a transformer, bridge rectifier, filtering capacitors, LM317 adjustable regulator, potentiometers for output voltage adjustment and trimming, and other passive components. The document provides the circuit diagram, lists components, and explains the working principle of how AC power is converted to a regulated DC output through rectification, filtering and linear voltage regulation.
L1 introduction
L1 introductionMohammad Umar Rehman This document provides an introduction to the Power Electronics-I course. It discusses the following key points:
- Power electronics deals with efficient power conversion using different circuit topologies. The course will cover basic theory of power semiconductor devices, AC-DC, DC-DC, and DC-AC conversion circuits.
- The learning outcomes are to introduce power semiconductor devices and components, familiarize students with various conversion circuit operations and applications, and provide a basis for further power electronics study.
- The course contents will cover power semiconductor devices and characteristics, triggering circuits, single and three-phase controlled converters, and miscellaneous converters. The document outlines classroom and online learning resources.
Lecture-3 : More Applications of Power Electronics
Lecture-3 : More Applications of Power Electronicsrsamurti The document discusses the applications and challenges of power electronics in modern power systems, highlighting issues such as increasing consumer demand, system instability, and the limitations of conventional transmission lines. It introduces various power electronic controllers like FACTS, STATCOM, and SVC that enhance power flow control and stability. Additionally, it covers the roles of power electronics in renewable energy systems like PV and wind energy, emphasizing its importance in achieving energy efficiency and automation.
Three level igct-based npc converters
Three level igct-based npc convertersrshambhu The document discusses a thermal management approach for fault-resilient design of three-level IGCT-based NPC converters. It analyzes the power device thermal stresses during overcurrent conditions when the firing mode protection is activated. Adding resilience impedances to the clamping diode branches helps restrict short circuit current through the internal IGCTs and limits their thermal stress, protecting the IGCTs even if the circuit breaker fails to operate properly during a fault. This allows damage to be confined to the freewheeling diodes instead of the more expensive IGCTs, reducing repair costs and downtime for the converter.
Power Electronics Introduction
Power Electronics IntroductionPoornimaDhandapani2 This document provides an introduction to power electronics. It defines power electronics as the technology associated with efficient conversion and control of electric power using power semiconductor devices. The future of global society will be dominated by computers and power electronics, with the former providing intelligence and the latter providing the means. Power electronics has many applications and is multidisciplinary, drawing from fields like signal processing, electronics, electromagnetics, and control theory. It describes the types of power electronic circuits like rectifiers, converters, choppers, inverters, and AC-AC converters. Power devices are also classified based on the number of terminals, charge carriers, and degree of controllability.
Power electronics(i)
Power electronics(i)Darya khan This lecture provides an introduction to power electronics and discusses power semiconductor devices. It introduces different types of power diodes including Schottky diodes, fast recovery diodes, and line frequency diodes. The key differences between these diode types are discussed related to their reverse recovery time and applications. The lecture also discusses the switching characteristics of power diodes and important parameters like reverse recovery time and forward recovery time.
Switching characteristics of power electronic devices
Switching characteristics of power electronic devicesSunny Purani The document discusses the switching characteristics of various power electronic devices, including ideal and practical switches, diodes, and transistors. It covers the transfer characteristics, switching times, and gate characteristics of devices like SCRs, IGBTs, and other transistors. Additionally, it addresses turn-on and turn-off characteristics of different semiconductor devices.
Power Electronics Lab Manual ME PED
Power Electronics Lab Manual ME PEDDr M Muruganandam Masilamani The document is a laboratory manual for power electronics and drives at Muthayammal Engineering College, detailing safety protocols, experimental procedures, and required apparatus for various experiments in the field. It includes instructions for conducting experiments on single-phase and three-phase converters, MOSFETs, and AC voltage controllers, with emphasis on observation, calculations, and record-keeping. Additionally, the manual contains specific circuit diagrams, formulas, and tabulation methods for recording experimental results.
Statics switches
Statics switcheskrunal103 This document discusses various types of power semiconductor devices used as switches in power electronic systems. It describes uncontrolled switches like diodes, semi-controlled switches like thyristors (SCRs), and fully controlled switches including power transistors. For each type of switch, it provides brief details about their operating principles, characteristics, and example devices like power diodes, IGBTs, MOSFETs, GTOs. It also compares the power ratings and operating frequencies of different switch technologies.
Solid state transformer
Solid state transformerShivani Mishra Solid state transformers (SSTs) are emerging grid technologies that use power electronics to transform voltage more efficiently than traditional transformers. SSTs offer advantages like lower volume and weight, fault isolation, voltage regulation, and integration of renewables. They consist of multi-stage converters and a high frequency transformer to convert AC voltage to high frequency AC, transform it, and convert it back to the desired low frequency AC or DC for loads. SSTs could improve power quality by isolating disturbances and regulating voltage, and enable two-way power flow to integrate distributed energy resources.
Thyristor technology
Thyristor technologySHIMI S L Power electronics devices operate at high power levels and require high efficiency compared to linear electronics. Some key power electronic devices include thyristors, IGBTs, MOSFETs, and integrated power circuits. Thyristors can be turned on through forward voltage triggering or gate triggering and turned off through natural commutation in AC circuits or forced commutation using resonant circuits, complementary devices, or external pulses. Proper protection of power devices includes using snubber circuits, overvoltage and overcurrent protection, and gate protection.
DC 12v Power supply
DC 12v Power supplyChangbantawaraee This document discusses various components used in power supply circuits including transformers, diodes, rectifiers, regulators, and capacitors. It mentions different types of rectifiers like half wave, full wave, and bridge rectifiers as well as voltage regulators like the 7805, LM7812, and descriptions of 5V and 12V power supply circuits.
EE201 -Chapter 6
EE201 -Chapter 6ruhiyah Chapter 6 describes the Silicon Controlled Rectifier (SCR), which consists of four alternating layers of p and n-type semiconductors and is used for high-power control applications. It also covers DIACs and TRIACs, which are bidirectional devices used for triggering and controlling alternating current in light dimmers and speed controls. Additionally, the Unijunction Transistor (UJT) is introduced as a device to trigger thyristors and control large AC currents.
Distance Protection
Distance Protectionncct The project focuses on identifying faults in power transmission lines using a microcontroller that monitors three lines (R, Y, B) connected to current transformers. It features an instrument rectifier circuit that converts AC to DC, an analog-to-digital converter for signal processing, and an LCD display for fault and location output. The system also includes components such as relays, power supply circuits, and a microcontroller (Atmel 89C51) to facilitate efficient fault detection and isolation.
EE8552 Power Electronics
EE8552 Power Electronicsrmkceteee Power electronics combines power engineering, electronics, and control systems to control and convert electric power using solid state semiconductor devices like thyristors. Some key applications of power electronics include motor control, lighting control, high voltage DC transmission, consumer appliances, industrial equipment, and renewable energy systems. The first power electronics device was the mercury arc rectifier in 1900, while the thyristor revolutionized power electronics in the 1950s and 1960s enabling much greater control of electric power. Common power semiconductor devices used in power electronics include power diodes, thyristors, transistors, MOSFETs, and IGBTs, with each having different characteristics that make them suitable for different power rating and switching speed needs.
Comparision of power electronic devices
Comparision of power electronic devicesVarikuppala Sangeetha This document compares different types of power electronic devices. It classifies devices as uncontrollable (diodes), half-controlled (thyristors), or fully controlled (MOSFETs, IGBTs, GTOs). It describes the structure, characteristics, safe operating areas, advantages, and applications of diodes, BJTs, MOSFETs, IGBTs, thyristors, GTOs, MCTs, and RCTs. The document provides details on each device type and discusses their common uses in areas like power conversion, motor drives, UPS systems, and power transmission.
Scr (07 Ece 109)
Scr (07 Ece 109)Snehashis Paul The document presents an overview of silicon controlled rectifiers (thyristors), detailing their structure, operation modes, history, and various types. It highlights the applications of thyristors in high voltage and current scenarios, such as electronic circuit control and power stabilization. The presentation emphasizes the significance of thyristors in both practical electric applications and various electronic devices.
Ee 444 electrical drives be(tx) 2012
Ee 444 electrical drives be(tx) 2012AZMAT ABBAS RANA This document provides the contents of a practical work book for the course EE-444 Electrical Drives at NED University of Engineering and Technology. The contents include 15 lab sessions that cover topics such as introduction to devices like diodes, SCRs, IGBTs and MOSFET switches. The lab sessions also cover experiments on AC/DC single phase and three phase controlled and non-controlled rectifiers, DC/DC chopper, characteristics of DC generators and motors, and starting of synchronous and induction motors. Safety rules for the electrical drives lab are also provided.
Power Electronics lab manual BE EEE
Power Electronics lab manual BE EEEDr M Muruganandam Masilamani The document is a Power Electronics Lab Manual for students of Muthayammal Engineering College, detailing safety instructions and specific procedures for various experiments involving SCRs, TRIACs, and MOSFETs. It outlines necessary apparatus, calculations, and recommendations for conducting experiments safely and effectively to ensure students gain practical knowledge in power electronics. Additionally, it includes a structured list of experiments with corresponding pages, ensuring organization and clarity.
Lecture-2 : Applications of Power Electronics
Lecture-2 : Applications of Power Electronicsrsamurti This document discusses several applications of power electronics, including:
1) Motor drives and variable speed drives which use power electronics to vary motor speed in an efficient manner and save energy compared to throttling flow with a valve.
2) LED and CFL lighting which use power electronics for power factor correction, constant current regulation and dimming controls.
3) Domestic appliances like fans which now use electronic speed controls instead of wasteful resistive controls.
Trends in-power-electronics
Trends in-power-electronicsrsamurti This document provides an overview of trends in power electronics. It discusses how power electronics is used for efficient power conversion and control through semiconductor devices. It also outlines several applications of power electronics such as motor drives, lighting, power supplies and renewable energy systems. The document mentions some professional organizations and conferences related to power electronics as well as major companies in the field.
More Related Content
What's hot (20)
Ppt on power electronics
Ppt on power electronicsShivani Mishra The document provides an overview of power electronics components and their evolution over time. It begins with early rectifier technologies like mercury-arc and thyratron tubes. It then discusses the transition to modern solid-state components like transistors, thyristors, and power transistors. Key power electronics devices like power diodes, MOSFETs, IGBTs, and thyristors are explained. DC-DC converters and their operating modes are also summarized.
Variable Regulated Power Supply
Variable Regulated Power SupplyBhanu Bhawesh This document describes the design and construction of a variable regulated power supply circuit. The circuit uses a transformer, rectifier, filter capacitor and adjustable linear regulator to convert household AC power into a continuously adjustable DC output between 1.2 and 30 volts. Key components include a transformer, bridge rectifier, filtering capacitors, LM317 adjustable regulator, potentiometers for output voltage adjustment and trimming, and other passive components. The document provides the circuit diagram, lists components, and explains the working principle of how AC power is converted to a regulated DC output through rectification, filtering and linear voltage regulation.
L1 introduction
L1 introductionMohammad Umar Rehman This document provides an introduction to the Power Electronics-I course. It discusses the following key points:
- Power electronics deals with efficient power conversion using different circuit topologies. The course will cover basic theory of power semiconductor devices, AC-DC, DC-DC, and DC-AC conversion circuits.
- The learning outcomes are to introduce power semiconductor devices and components, familiarize students with various conversion circuit operations and applications, and provide a basis for further power electronics study.
- The course contents will cover power semiconductor devices and characteristics, triggering circuits, single and three-phase controlled converters, and miscellaneous converters. The document outlines classroom and online learning resources.
Lecture-3 : More Applications of Power Electronics
Lecture-3 : More Applications of Power Electronicsrsamurti The document discusses the applications and challenges of power electronics in modern power systems, highlighting issues such as increasing consumer demand, system instability, and the limitations of conventional transmission lines. It introduces various power electronic controllers like FACTS, STATCOM, and SVC that enhance power flow control and stability. Additionally, it covers the roles of power electronics in renewable energy systems like PV and wind energy, emphasizing its importance in achieving energy efficiency and automation.
Three level igct-based npc converters
Three level igct-based npc convertersrshambhu The document discusses a thermal management approach for fault-resilient design of three-level IGCT-based NPC converters. It analyzes the power device thermal stresses during overcurrent conditions when the firing mode protection is activated. Adding resilience impedances to the clamping diode branches helps restrict short circuit current through the internal IGCTs and limits their thermal stress, protecting the IGCTs even if the circuit breaker fails to operate properly during a fault. This allows damage to be confined to the freewheeling diodes instead of the more expensive IGCTs, reducing repair costs and downtime for the converter.
Power Electronics Introduction
Power Electronics IntroductionPoornimaDhandapani2 This document provides an introduction to power electronics. It defines power electronics as the technology associated with efficient conversion and control of electric power using power semiconductor devices. The future of global society will be dominated by computers and power electronics, with the former providing intelligence and the latter providing the means. Power electronics has many applications and is multidisciplinary, drawing from fields like signal processing, electronics, electromagnetics, and control theory. It describes the types of power electronic circuits like rectifiers, converters, choppers, inverters, and AC-AC converters. Power devices are also classified based on the number of terminals, charge carriers, and degree of controllability.
Power electronics(i)
Power electronics(i)Darya khan This lecture provides an introduction to power electronics and discusses power semiconductor devices. It introduces different types of power diodes including Schottky diodes, fast recovery diodes, and line frequency diodes. The key differences between these diode types are discussed related to their reverse recovery time and applications. The lecture also discusses the switching characteristics of power diodes and important parameters like reverse recovery time and forward recovery time.
Switching characteristics of power electronic devices
Switching characteristics of power electronic devicesSunny Purani The document discusses the switching characteristics of various power electronic devices, including ideal and practical switches, diodes, and transistors. It covers the transfer characteristics, switching times, and gate characteristics of devices like SCRs, IGBTs, and other transistors. Additionally, it addresses turn-on and turn-off characteristics of different semiconductor devices.
Power Electronics Lab Manual ME PED
Power Electronics Lab Manual ME PEDDr M Muruganandam Masilamani The document is a laboratory manual for power electronics and drives at Muthayammal Engineering College, detailing safety protocols, experimental procedures, and required apparatus for various experiments in the field. It includes instructions for conducting experiments on single-phase and three-phase converters, MOSFETs, and AC voltage controllers, with emphasis on observation, calculations, and record-keeping. Additionally, the manual contains specific circuit diagrams, formulas, and tabulation methods for recording experimental results.
Statics switches
Statics switcheskrunal103 This document discusses various types of power semiconductor devices used as switches in power electronic systems. It describes uncontrolled switches like diodes, semi-controlled switches like thyristors (SCRs), and fully controlled switches including power transistors. For each type of switch, it provides brief details about their operating principles, characteristics, and example devices like power diodes, IGBTs, MOSFETs, GTOs. It also compares the power ratings and operating frequencies of different switch technologies.
Solid state transformer
Solid state transformerShivani Mishra Solid state transformers (SSTs) are emerging grid technologies that use power electronics to transform voltage more efficiently than traditional transformers. SSTs offer advantages like lower volume and weight, fault isolation, voltage regulation, and integration of renewables. They consist of multi-stage converters and a high frequency transformer to convert AC voltage to high frequency AC, transform it, and convert it back to the desired low frequency AC or DC for loads. SSTs could improve power quality by isolating disturbances and regulating voltage, and enable two-way power flow to integrate distributed energy resources.
Thyristor technology
Thyristor technologySHIMI S L Power electronics devices operate at high power levels and require high efficiency compared to linear electronics. Some key power electronic devices include thyristors, IGBTs, MOSFETs, and integrated power circuits. Thyristors can be turned on through forward voltage triggering or gate triggering and turned off through natural commutation in AC circuits or forced commutation using resonant circuits, complementary devices, or external pulses. Proper protection of power devices includes using snubber circuits, overvoltage and overcurrent protection, and gate protection.
DC 12v Power supply
DC 12v Power supplyChangbantawaraee This document discusses various components used in power supply circuits including transformers, diodes, rectifiers, regulators, and capacitors. It mentions different types of rectifiers like half wave, full wave, and bridge rectifiers as well as voltage regulators like the 7805, LM7812, and descriptions of 5V and 12V power supply circuits.
EE201 -Chapter 6
EE201 -Chapter 6ruhiyah Chapter 6 describes the Silicon Controlled Rectifier (SCR), which consists of four alternating layers of p and n-type semiconductors and is used for high-power control applications. It also covers DIACs and TRIACs, which are bidirectional devices used for triggering and controlling alternating current in light dimmers and speed controls. Additionally, the Unijunction Transistor (UJT) is introduced as a device to trigger thyristors and control large AC currents.
Distance Protection
Distance Protectionncct The project focuses on identifying faults in power transmission lines using a microcontroller that monitors three lines (R, Y, B) connected to current transformers. It features an instrument rectifier circuit that converts AC to DC, an analog-to-digital converter for signal processing, and an LCD display for fault and location output. The system also includes components such as relays, power supply circuits, and a microcontroller (Atmel 89C51) to facilitate efficient fault detection and isolation.
EE8552 Power Electronics
EE8552 Power Electronicsrmkceteee Power electronics combines power engineering, electronics, and control systems to control and convert electric power using solid state semiconductor devices like thyristors. Some key applications of power electronics include motor control, lighting control, high voltage DC transmission, consumer appliances, industrial equipment, and renewable energy systems. The first power electronics device was the mercury arc rectifier in 1900, while the thyristor revolutionized power electronics in the 1950s and 1960s enabling much greater control of electric power. Common power semiconductor devices used in power electronics include power diodes, thyristors, transistors, MOSFETs, and IGBTs, with each having different characteristics that make them suitable for different power rating and switching speed needs.
Comparision of power electronic devices
Comparision of power electronic devicesVarikuppala Sangeetha This document compares different types of power electronic devices. It classifies devices as uncontrollable (diodes), half-controlled (thyristors), or fully controlled (MOSFETs, IGBTs, GTOs). It describes the structure, characteristics, safe operating areas, advantages, and applications of diodes, BJTs, MOSFETs, IGBTs, thyristors, GTOs, MCTs, and RCTs. The document provides details on each device type and discusses their common uses in areas like power conversion, motor drives, UPS systems, and power transmission.
Scr (07 Ece 109)
Scr (07 Ece 109)Snehashis Paul The document presents an overview of silicon controlled rectifiers (thyristors), detailing their structure, operation modes, history, and various types. It highlights the applications of thyristors in high voltage and current scenarios, such as electronic circuit control and power stabilization. The presentation emphasizes the significance of thyristors in both practical electric applications and various electronic devices.
Ee 444 electrical drives be(tx) 2012
Ee 444 electrical drives be(tx) 2012AZMAT ABBAS RANA This document provides the contents of a practical work book for the course EE-444 Electrical Drives at NED University of Engineering and Technology. The contents include 15 lab sessions that cover topics such as introduction to devices like diodes, SCRs, IGBTs and MOSFET switches. The lab sessions also cover experiments on AC/DC single phase and three phase controlled and non-controlled rectifiers, DC/DC chopper, characteristics of DC generators and motors, and starting of synchronous and induction motors. Safety rules for the electrical drives lab are also provided.
Power Electronics lab manual BE EEE
Power Electronics lab manual BE EEEDr M Muruganandam Masilamani The document is a Power Electronics Lab Manual for students of Muthayammal Engineering College, detailing safety instructions and specific procedures for various experiments involving SCRs, TRIACs, and MOSFETs. It outlines necessary apparatus, calculations, and recommendations for conducting experiments safely and effectively to ensure students gain practical knowledge in power electronics. Additionally, it includes a structured list of experiments with corresponding pages, ensuring organization and clarity.
Viewers also liked (20)
Lecture-2 : Applications of Power Electronics
Lecture-2 : Applications of Power Electronicsrsamurti This document discusses several applications of power electronics, including:
1) Motor drives and variable speed drives which use power electronics to vary motor speed in an efficient manner and save energy compared to throttling flow with a valve.
2) LED and CFL lighting which use power electronics for power factor correction, constant current regulation and dimming controls.
3) Domestic appliances like fans which now use electronic speed controls instead of wasteful resistive controls.
Trends in-power-electronics
Trends in-power-electronicsrsamurti This document provides an overview of trends in power electronics. It discusses how power electronics is used for efficient power conversion and control through semiconductor devices. It also outlines several applications of power electronics such as motor drives, lighting, power supplies and renewable energy systems. The document mentions some professional organizations and conferences related to power electronics as well as major companies in the field.
L5 data-parallel-computers
L5 data-parallel-computersrsamurti The document discusses bottlenecks in high-speed CPU design, including that clock speeds cannot increase beyond a limit due to the speed of light and heat dissipation problems. It also discusses how reducing supply voltage and adjusting clock speeds dynamically can help conserve power and manage heat in CPUs. The document lists applications that require intensive computing such as weather forecasting, molecular modeling, and bioinformatics. It notes that supercomputers use parallel processing to achieve high speeds for such applications, with the fastest performing over 33 petaflops. The document also summarizes Flynn's taxonomy of computer architectures.
Introduction to-Tex-and-LaTeX
Introduction to-Tex-and-LaTeXrsamurti This document introduces TEX and LATEX. It discusses that TEX was created by Donald Knuth in 1978 to facilitate high-quality document production with minimal effort. LATEX, created by Leslie Lamport in 1986, is a markup language that uses TEX in the background for typesetting. The document recommends various TEX/LATEX software for Windows and Linux and discusses document classes, packages, and important links for learning more about TEX and LATEX.
L6 primary-memory
L6 primary-memoryrsamurti The document discusses various aspects of computer organization including memory access time, types of memory, memory addressing, and byte ordering. Memory access time refers to the time it takes for data to appear on the memory bus after a read signal. Random access memory (RAM) has the same access time for all locations, while sequential access memory (SAM) varies by location, like disks. Common types of semiconductor memory include ROM, PROM, EPROM, EEPROM, flash, SRAM, DRAM, and NV-RAM. Memory is addressed using bit patterns and organized by width, cell size, address size, and capacity. Byte ordering can be big endian or little endian depending on whether the most or least significant
L1 intro-to-mpu-mcu
L1 intro-to-mpu-mcursamurti The document discusses the main components and concepts of computer organization. It summarizes that a digital computer contains four main blocks: the central processing unit (CPU), memory, input, and output. The CPU executes programs stored in memory and communicates with other components via address, data, and control buses. A microprocessor is a CPU on a single chip, while a microcontroller contains a CPU as well as peripherals like timers on one chip. The document also defines basic units of digital information like bits, bytes, and word length, and explains concepts like address space and Von Neumann's stored program concept.
Transformers
Transformersrsamurti Transformers are necessary in power systems to step up voltage for efficient transmission and step down voltage for safe distribution. They operate on the principle of electromagnetic induction and have a core made of laminated steel, with coils of wire wound around the core. The ratio of the number of turns in the primary and secondary windings determines the voltage transformation ratio. Power losses in transformers include copper losses from winding resistance and iron losses from hysteresis and eddy currents in the core. Efficiency is highest when load matches the ratio of iron to copper losses.
L4 speeding-up-execution
L4 speeding-up-executionrsamurti The document discusses different aspects of computer organization to improve performance. It describes how a data path works by feeding two operands to an ALU and storing the output in a register. Modern processors implement features like pipelining and instruction-level parallelism to maximize instruction throughput. Pipelining involves splitting instruction processing across multiple stages to allow concurrent execution. Superscalar architectures contain multiple pipelines that can process multiple instructions simultaneously as long as they do not conflict over resources.
L3 instruction-execution-steps
L3 instruction-execution-stepsrsamurti This lecture notes present an overview of computer organization, focusing on von Neumann and Harvard architectures, along with the roles of Memory Address Register (MAR) and Memory Data Register (MDR) in CPU instruction execution. It discusses the steps for executing instructions, differences between Complex Instruction Set Computers (CISC) and Reduced Instruction Set Computers (RISC), along with their respective features and performance characteristics. The document emphasizes the trends in computer architecture, highlighting the integration of best features from both CISC and RISC for optimal performance.
L13 interrupts-in-atmega328 p
L13 interrupts-in-atmega328 prsamurti This document discusses interrupts in the Atmega328P microcontroller. It describes asynchronous I/O operation using interrupts versus polling. Interrupts allow the microcontroller to perform other tasks while waiting for an I/O device to signal that it is ready. When an interrupt occurs, the microcontroller saves its state and jumps to an interrupt service routine to handle the device, then returns to its original task. The Atmega328P has multiple interrupt vectors that can be enabled or disabled individually using various register bits to control interrupts from different pins and peripherals. Example C code is provided to configure an interrupt-driven program from the INT0 pin.
L7 starting-to-use-mcu
L7 starting-to-use-mcursamurti This document discusses microcontroller units (MCUs), including prominent MCU manufacturers, factors that affect MCU choice, and facilities required for MCU development. It outlines the steps needed to get started with an MCU, such as familiarizing oneself with the MCU's package, architecture, and instruction set, as well as practicing assembly programming and understanding how to program the MCU using higher-level languages and connect external devices. The document emphasizes repeating these steps is often necessary to comfortably use an MCU.
L14 kb-lcd-interfacing-with-atmega328 p
L14 kb-lcd-interfacing-with-atmega328 prsamurti The document discusses interfacing keyboards and LCD displays. It describes both linear and matrix arrangements for keyboards and explains how to identify which key is pressed in a matrix. It also provides details on LCD displays, including pin descriptions and common commands. The steps to initialize an LCD and send commands and data are outlined.
L12 c-language-programming-of-atmega328 p
L12 c-language-programming-of-atmega328 prsamurti This document discusses C programming for the Atmega328P microcontroller. It outlines some merits and demerits of C programming for AVR microcontrollers, including that C programs can be ported between microcontrollers with minor modifications but C compilers do not always produce optimized hex files. It also lists some prominent AVR C compilers and describes common data types for AVR C programming. Finally, it provides examples of delay functions, input/output operations, logic operations, bitwise operations, and switch statements in AVR C programs.
Three phase-circuits
Three phase-circuitsrsamurti The document discusses three-phase circuits and provides information on:
- The advantages of three-phase supply systems such as higher efficiency of power transfer and smoother load characteristics.
- Key concepts like phase sequence, balanced/unbalanced supply and load, and the relationships between line and phase voltages and currents.
- How to calculate power in a balanced three-phase system and use two wattmeters to measure total power and power factor.
L9 understanding-atmega328 p-2
L9 understanding-atmega328 p-2rsamurti The document discusses the key components and features of the Atmega328P microcontroller, including its 32 general purpose registers, arithmetic logic unit (ALU), status register for conditional branching, power on reset, clock distribution system, power management features, and watchdog timer. The microcontroller can be programmed after a power on reset to begin code execution from a specified address location.
L16 usart-atmega328 p
L16 usart-atmega328 prsamurti This document discusses serial communication in the Atmega328P microcontroller. It describes serial communication as bit-by-bit transmission that requires conversion between parallel and serial, and can operate over longer distances than parallel communication. The document outlines synchronous and asynchronous serial communication, common interface standards like RS-232, SPI, and serial communication protocols in the Atmega328P like USART and SPI.
L8 understanding-atmega328 p-1
L8 understanding-atmega328 p-1rsamurti The document discusses the features and architecture of the Atmega328P microcontroller. It has 32KB of flash memory, 2KB of SRAM, and 1KB of EEPROM. It features timers, PWM, ADC, serial communication interfaces, and 23 I/O pins. The CPU core uses an 8-bit RISC architecture and operates at speeds up to 20MHz. It has 32 general purpose registers and powerful instructions that typically execute in a single clock cycle.
Synchronous generators
Synchronous generatorsrsamurti The document describes synchronous generators and their operation. It discusses:
1) The principle of operation of a synchronous generator, which uses a rotating magnetic field to induce voltage in stationary armature conductors.
2) Different types of generator constructions including salient pole and cylindrical rotor types.
3) Advantages of the rotating field construction used in most generators.
4) Reasons for using a distributed winding in generator armatures.
L11 assembly-language-programming-of-atmega328 p
L11 assembly-language-programming-of-atmega328 prsamurti The document discusses assembler programming for the Atmega328P microcontroller. It describes how to store fixed data in flash memory using the DB and DW directives and how to determine word and byte addresses. It also explains the HIGH() and LOW() functions, which return the high and low bytes of a 16-bit value and are used to initialize the Z register before loading data from flash memory. Arithmetic and logical expressions that can be used in assembler programming are also presented.
L10 assembly-language-programming-of-atmega328 p
L10 assembly-language-programming-of-atmega328 prsamurti This document discusses assembler programming for the Atmega328P microcontroller. It begins by explaining the language options for programming the microcontroller, including higher-level languages like C/C++ and assembly language. It describes why learning assembly language is important, particularly for understanding the microcontroller's architecture and writing optimized code. The facilities needed for assembly language programming are outlined, including a text editor, assembler, debugger/simulator, and programmer. An overview of the Atmega328P's instruction set is provided, including classifications and addressing modes. Examples of several common instructions like LDI, ADD, MOV, COM, and JMP are described.
Ad
Similar to Lecture-7 : Semiconductor Power Switching Devices-4 (20)
ELECTRONIC SWITCHES.pptx
ELECTRONIC SWITCHES.pptxshamtekawambwa1 The document discusses different types of electronic switches used in place of mechanical switches. Electronic switches use semiconductor devices like transistors instead of physical contacts. Some key types discussed are BJT, MOSFET, IGBT, and thyristor-based switches like SCR, GTO, and IGCT. BJTs can be used as switches by operating them in cutoff or saturation regions to turn the switch ON or OFF. MOSFETs and IGBTs also operate as voltage-controlled switches.
Topic 2 - Switch Realization.pptx
Topic 2 - Switch Realization.pptxVanJasperCastillo The document discusses switch realization in power electronics. It begins with an overview of single-, two-, and four-quadrant switches and applications. It then surveys common power semiconductor devices used to realize switches, including diodes, MOSFETs, BJTs, IGBTs, and thyristors. Key aspects of transistor switching losses are examined for a clamped inductive load. Recovered charge in power diodes is also discussed. Realization of different types of switches using these devices is explored through examples like buck converters.
POWER SWITCHING DEVICES
POWER SWITCHING DEVICESSadanandam4u This document outlines the syllabus for a Power Electronics course. It covers key topics like power semiconductor switches, AC-DC converters, DC-DC converters, AC-DC inverters, and AC-AC converters. Specific units will discuss power switching devices, phase controlled rectifiers, choppers/SMPS, inverters, and voltage regulators. The course aims to develop skills for designing power converters for drive and power system applications and to understand commercial and industrial power electronics applications.
308557074-POWER-SEMICONDUCTOR-DEVICES-ppt.ppt
308557074-POWER-SEMICONDUCTOR-DEVICES-ppt.pptDrGVijayakumar2 The document discusses various power semiconductor devices, including diodes, transistors (BJTs, MOSFETs, IGBTs), and thyristors, focusing on their operational characteristics, applications, and advantages. It describes the ideal and non-ideal performance of these devices, emphasizing losses during operation, the importance of heat management, and the function of snubber circuits for voltage spikes. The selection criteria for power devices based on voltage, current, and switching characteristics are also highlighted, along with device-specific limitations.
POWER ELECTRONICS
POWER ELECTRONICSashutoshgupta1102 Here are the key methods for turning on a thyristor:
- Gate trigger pulse: Applying a positive voltage pulse between gate and cathode increases leakage current, initiating regenerative turn-on. This is the controlled method.
- Thermal triggering: Increasing temperature raises leakage currents, which can initiate turn-on without a gate pulse under high temperature conditions. This is an uncontrolled method.
- Light triggering: Illuminating the thyristor junctions with light generates electron-hole pairs, raising leakage currents and enabling turn-on without a gate pulse in photosensitive thyristors. Again, uncontrolled.
- dv/dt triggering: A sufficiently fast rate of rise of the anode voltage can generate displacement
POWER ELECTRONICS
POWER ELECTRONICSsujimuthu2 The document discusses several power semiconductor devices:
1. A Silicon Controlled Rectifier (SCR) is a solid state device that controls current flow through its four layers when a gate signal exceeds a threshold.
2. A Bipolar Junction Transistor (BJT) is composed of three terminals - collector, base, and emitter. There are two types, npn and pnp, which differ in their layer doping.
3. A Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) uses a metal gate separated from a semiconductor channel by an oxide layer to control current flow between its source and drain based on the gate voltage. N-channel and
Advantages of the 3 Power Transistor used in the Automobile
Advantages of the 3 Power Transistor used in the Automobilekarthiks21auto The document discusses power electronic devices, particularly various types of power transistors including BJTs, MOSFETs, and IGBTs, outlining their structures, operations, and characteristics. It highlights the functionality and application of these devices, detailing their behaviors in different operational regions such as cut-off, active, and saturation. Additionally, it explores the advantages and disadvantages of each transistor type, emphasizing their switching capabilities and usage in power electronic systems.
Power Electronics
Power ElectronicsIsuru Thiwanka Power electronics involves controlling the flow of electrical energy through electronic circuits. Rectifiers and inverters are common examples. Power electronics emphasizes large semiconductor devices, magnetic energy storage, and control methods for nonlinear systems. It plays a central role in energy systems and alternative resources. Power electronic systems efficiently convert electrical energy from one form to another. Power electronics courses cover high voltage switching devices, rectifiers, DC-DC converters, and inverters. Thyristors like SCRs are semiconductor devices that act as open or closed switches for control applications. SCRs are used for power control, backup lighting, and over-voltage protection.
l2-power semiconductor devices and charactoristics.ppt
l2-power semiconductor devices and charactoristics.pptantexnebyu This document provides an overview of power semiconductor devices and their characteristics. It discusses various power devices including diodes, thyristors, transistors, and their construction and operating principles. Key points covered include:
- Power diodes can conduct current in the forward bias state and block it in reverse bias, but require a recovery time when switched from on to off.
- Thyristors like SCRs can latch on in the forward conducting state and require the current to go to zero to turn off, while TRIACs are dual polarity thyristors.
- Power transistors like IGBTs, MOSFETs, and BJTs can be precisely controlled on and off but require heat sinking due
Oufiydiydyidyidiydiydydiydyidxydyidydddf
Oufiydiydyidyidiydiydydiydyidxydyidydddfoliviapaldgp The document provides an in-depth overview of power diodes, detailing the characteristics and behavior of p-n junction diodes under varying biases, as well as construction specifics for power applications. It discusses various power semiconductor devices, including BJTs, MOSFETs, IGBTs, SCRs, and TRIACs, highlighting their operational principles, advantages, and limitations in terms of switching speed, on-resistance, and thermal behavior. The importance of maintaining a balance between breakdown voltage, on-resistance, and switching characteristics in design is emphasized throughout the text.
PPT-Introduction-to-Power-Electronics.pdf
PPT-Introduction-to-Power-Electronics.pdfdisey31419 The document introduces power electronics, highlighting its role in power conversion through semiconductor devices with applications in various fields including industrial, residential, and vehicle technologies. It discusses key components such as switched mode power supplies, inverters, and various active and passive devices like MOSFETs, IGBTs, and diodes. Additionally, it covers the characteristics, benefits, and cooling methods necessary for efficient operation of these electronic systems.
L5 semiconductor-power-switching-devices-2-130818121609-phpapp01
L5 semiconductor-power-switching-devices-2-130818121609-phpapp01neomindx 1. The document discusses the structure, operation, and characteristics of silicon controlled rectifiers (SCRs). SCRs are semiconductor devices that act as electrically controlled switches.
2. The key aspects covered include the two-transistor model of an SCR, conditions for turn on and turn off, factors affecting turn on such as voltage and temperature, and methods of turning off an SCR.
3. Design considerations for SCRs like snubber circuits, gate protection, and turn on/off characteristics are also summarized. Different packages for SCRs like disc, stud, and power modules are shown along with specifications.
power electronics_semiconductor swtiches.pptx
power electronics_semiconductor swtiches.pptxswathiarshakota This document outlines the fundamental concepts of power electronics, highlighting the various power switching devices, converters, and their applications in controlling and converting electric power. It discusses types of power semiconductor devices, focusing on their characteristics, operational principles, advantages, and disadvantages, specifically detailing diodes and transistors. Additionally, it covers the importance of understanding switching characteristics and converter topologies for optimizing power electronics systems.
Bjt and its differnet parameters
Bjt and its differnet parametersHasantariq311 This document discusses different types of transistors and their operating regions. It describes:
1) The two main types of transistors - bipolar junction transistors (BJT) and field effect transistors (FET) - and how they control current and voltage. BJTs use voltage to control current, while FETs use current to control voltage.
2) The two common types of BJTs - NPN and PNP - which differ in the order of doped semiconductor regions.
3) The three operating regions of BJTs - cutoff, active, and saturation. The active region is where BJTs function as amplifiers by controlling collector current with base current.
4) Key transistor parameters
Bjt and its differnet parameters
Bjt and its differnet parametersHasantariq311 This document discusses different types of transistors and their operating regions. It describes:
1) The two main types of transistors - bipolar junction transistors (BJT) and field effect transistors (FET) - and how they control current and voltage. BJTs use voltage to control current, while FETs use current to control voltage.
2) The two common types of BJTs - NPN and PNP - which differ in terms of the doping and direction of current flow in their base-collector and base-emitter diodes.
3) The three operating regions of BJTs - cutoff, active, and saturation - and how current flows in each region depending on whether the base
Devices part 1
Devices part 1Taimur Ijaz Switchgear and control panels contain electrical disconnects, fuses, and circuit breakers to control, protect, and isolate equipment in power systems. Solid state devices like diodes, thyristors, transistors, and other semiconductors are increasingly used for control and protection over mechanical devices due to greater reliability and speed. Power semiconductor devices must conduct large currents with low losses while blocking high voltages, which is achieved through lightly doped drift layers between heavily doped layers.
Lecture slides_power electronics daniel hart Ch1.pdf
Lecture slides_power electronics daniel hart Ch1.pdfGIFT University, Gujranwala, Pakistan This document provides an overview of power semiconductor devices taught in a course at JCT College of Engineering & Technology. It covers topics like power diodes, transistors, thyristors, and other devices. For each device, it discusses structural features, characteristics like V-I and switching, and examples. It compares features of power BJT, MOSFET, IGBT, and provides applications of devices like thyristors, IGBTs and SITs. The document aims to educate students about key power electronics components through detailed technical explanations and diagrams.
File 5e8ed4ef42f92
File 5e8ed4ef42f92Mrabet Makrem Power electronics deals with converting electrical power from one form to another in an efficient manner. Key components in power electronics systems include power semiconductor switches such as diodes, thyristors, transistors, and newer devices like IGBTs and IGCTs. These switches are used to build converters that can change voltages and currents in applications like power supplies, motor drives, and renewable energy systems.
Transistor Construction Transistor Operation Common-Base Configuration
Transistor Construction Transistor Operation Common-Base ConfigurationAmmarAlHejazi1 Introduction
Transistor Construction
Transistor Operation
Common-Base Configuration
Transistor Amplifying Action
Common-Emitter Configuration
Common-Collector Configuration
Limits of Operation
Transistor Specification Sheet
Transistor Testing
Transistor Casing and Terminal Identification
Ad
Recently uploaded (20)
FIDO Seminar: Evolving Landscape of Post-Quantum Cryptography.pptx
FIDO Seminar: Evolving Landscape of Post-Quantum Cryptography.pptxFIDO Alliance FIDO Seminar: Evolving Landscape of Post-Quantum Cryptography
“Addressing Evolving AI Model Challenges Through Memory and Storage,” a Prese...
“Addressing Evolving AI Model Challenges Through Memory and Storage,” a Prese...Edge AI and Vision Alliance For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2025/06/addressing-evolving-ai-model-challenges-through-memory-and-storage-a-presentation-from-micron/
Wil Florentino, Senior Segment Marketing Manager at Micron, presents the “Addressing Evolving AI Model Challenges Through Memory and Storage” tutorial at the May 2025 Embedded Vision Summit.
In the fast-changing world of artificial intelligence, the industry is deploying more AI compute at the edge. But the growing diversity and data footprint of transformers and models such as large language models and large multimodal models puts a spotlight on memory performance and data storage capacity as key bottlenecks. Enabling the full potential of AI in industries such as manufacturing, automotive, robotics and transportation will require us to find efficient ways to deploy this new generation of complex models.
In this presentation, Florentino explores how memory and storage are responding to this need and solving complex issues in the AI market. He examines the storage capacity and memory bandwidth requirements of edge AI use cases ranging from tiny devices with severe cost and power constraints to edge servers, and he explains how new memory technologies such as LPDDR5, LPCAMM2 and multi-port SSDs are helping system developers to meet these challenges.
“Why It’s Critical to Have an Integrated Development Methodology for Edge AI,...
“Why It’s Critical to Have an Integrated Development Methodology for Edge AI,...Edge AI and Vision Alliance For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2025/06/why-its-critical-to-have-an-integrated-development-methodology-for-edge-ai-a-presentation-from-lattice-semiconductor/
Sreepada Hegade, Director of ML Systems and Software at Lattice Semiconductor, presents the “Why It’s Critical to Have an Integrated Development Methodology for Edge AI” tutorial at the May 2025 Embedded Vision Summit.
The deployment of neural networks near sensors brings well-known advantages such as lower latency, privacy and reduced overall system cost—but also brings significant challenges that complicate development. These challenges can be addressed effectively by choosing the right solution and design methodology. The low-power FPGAs from Lattice are well poised to enable efficient edge implementation of models, while Lattice’s proven development methodology helps to mitigate the challenges and risks associated with edge model deployment.
In this presentation, Hegade explains the importance of an integrated framework that tightly consolidates different aspects of edge AI development, including training, quantization of networks for edge deployment, integration with sensors and inferencing. He also illustrates how Lattice’s simplified tool flow helps to achieve the best trade-off between power, performance and efficiency using low-power FPGAs for edge deployment of various AI workloads.
“Key Requirements to Successfully Implement Generative AI in Edge Devices—Opt...
“Key Requirements to Successfully Implement Generative AI in Edge Devices—Opt...Edge AI and Vision Alliance For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2025/06/key-requirements-to-successfully-implement-generative-ai-in-edge-devices-optimized-mapping-to-the-enhanced-npx6-neural-processing-unit-ip-a-presentation-from-synopsys/
Gordon Cooper, Principal Product Manager at Synopsys, presents the “Key Requirements to Successfully Implement Generative AI in Edge Devices—Optimized Mapping to the Enhanced NPX6 Neural Processing Unit IP” tutorial at the May 2025 Embedded Vision Summit.
In this talk, Cooper discusses emerging trends in generative AI for edge devices and the key role of transformer-based neural networks. He reviews the distinct attributes of transformers, their advantages over conventional convolutional neural networks and how they enable generative AI.
Cooper then covers key requirements that must be met for neural processing units (NPU) to support transformers and generative AI in edge device applications. He uses transformer-based generative AI examples to illustrate the efficient mapping of these workloads onto the enhanced Synopsys ARC NPX NPU IP family.
Edge-banding-machines-edgeteq-s-200-en-.pdf
Edge-banding-machines-edgeteq-s-200-en-.pdfAmirStern2 מכונת קנטים המתאימה לנגריות קטנות או גדולות (כמכונת גיבוי).
מדביקה קנטים מגליל או פסים, עד עובי קנט – 3 מ"מ ועובי חומר עד 40 מ"מ. בקר ממוחשב המתריע על תקלות, ומנועים מאסיביים תעשייתיים כמו במכונות הגדולות.
War_And_Cyber_3_Years_Of_Struggle_And_Lessons_For_Global_Security.pdf
War_And_Cyber_3_Years_Of_Struggle_And_Lessons_For_Global_Security.pdfbiswajitbanerjee38 Russia is one of the most aggressive nations when it comes to state coordinated cyberattacks — and Ukraine has been at the center of their crosshairs for 3 years. This report, provided the State Service of Special Communications and Information Protection of Ukraine contains an incredible amount of cybersecurity insights, showcasing the coordinated aggressive cyberwarfare campaigns of Russia against Ukraine.
It brings to the forefront that understanding your adversary, especially an aggressive nation state, is important for cyber defense. Knowing their motivations, capabilities, and tactics becomes an advantage when allocating resources for maximum impact.
Intelligence shows Russia is on a cyber rampage, leveraging FSB, SVR, and GRU resources to professionally target Ukraine’s critical infrastructures, military, and international diplomacy support efforts.
The number of total incidents against Ukraine, originating from Russia, has steadily increased from 1350 in 2021 to 4315 in 2024, but the number of actual critical incidents has been managed down from a high of 1048 in 2022 to a mere 59 in 2024 — showcasing how the rapid detection and response to cyberattacks has been impacted by Ukraine’s improved cyber resilience.
Even against a much larger adversary, Ukraine is showcasing outstanding cybersecurity, enabled by strong strategies and sound tactics. There are lessons to learn for any enterprise that could potentially be targeted by aggressive nation states.
Definitely worth the read!
TrustArc Webinar - 2025 Global Privacy Survey
TrustArc Webinar - 2025 Global Privacy SurveyTrustArc How does your privacy program compare to your peers? What challenges are privacy teams tackling and prioritizing in 2025?
In the sixth annual Global Privacy Benchmarks Survey, we asked global privacy professionals and business executives to share their perspectives on privacy inside and outside their organizations. The annual report provides a 360-degree view of various industries' priorities, attitudes, and trends. See how organizational priorities and strategic approaches to data security and privacy are evolving around the globe.
This webinar features an expert panel discussion and data-driven insights to help you navigate the shifting privacy landscape. Whether you are a privacy officer, legal professional, compliance specialist, or security expert, this session will provide actionable takeaways to strengthen your privacy strategy.
This webinar will review:
- The emerging trends in data protection, compliance, and risk
- The top challenges for privacy leaders, practitioners, and organizations in 2025
- The impact of evolving regulations and the crossroads with new technology, like AI
Predictions for the future of privacy in 2025 and beyond
Enabling BIM / GIS integrations with Other Systems with FME
Enabling BIM / GIS integrations with Other Systems with FMESafe Software Jacobs has successfully utilized FME to tackle the complexities of integrating diverse data sources in a confidential $1 billion campus improvement project. The project aimed to create a comprehensive digital twin by merging Building Information Modeling (BIM) data, Construction Operations Building Information Exchange (COBie) data, and various other data sources into a unified Geographic Information System (GIS) platform. The challenge lay in the disparate nature of these data sources, which were siloed and incompatible with each other, hindering efficient data management and decision-making processes.
To address this, Jacobs leveraged FME to automate the extraction, transformation, and loading (ETL) of data between ArcGIS Indoors and IBM Maximo. This process ensured accurate transfer of maintainable asset and work order data, creating a comprehensive 2D and 3D representation of the campus for Facility Management. FME's server capabilities enabled real-time updates and synchronization between ArcGIS Indoors and Maximo, facilitating automatic updates of asset information and work orders. Additionally, Survey123 forms allowed field personnel to capture and submit data directly from their mobile devices, triggering FME workflows via webhooks for real-time data updates. This seamless integration has significantly enhanced data management, improved decision-making processes, and ensured data consistency across the project lifecycle.
“From Enterprise to Makers: Driving Vision AI Innovation at the Extreme Edge,...
“From Enterprise to Makers: Driving Vision AI Innovation at the Extreme Edge,...Edge AI and Vision Alliance For the full video of this presentation, please visit: https://www.edge-ai-vision.com/2025/06/from-enterprise-to-makers-driving-vision-ai-innovation-at-the-extreme-edge-a-presentation-from-sony-semiconductor-solutions/
Amir Servi, Edge Deep Learning Product Manager at Sony Semiconductor Solutions, presents the “From Enterprise to Makers: Driving Vision AI Innovation at the Extreme Edge” tutorial at the May 2025 Embedded Vision Summit.
Sony’s unique integrated sensor-processor technology is enabling ultra-efficient intelligence directly at the image source, transforming vision AI for enterprises and developers alike. In this presentation, Servi showcases how the AITRIOS platform simplifies vision AI for enterprises with tools for large-scale deployments and model management.
Servi also highlights his company’s collaboration with Ultralytics and Raspberry Pi, which brings YOLO models to the developer community, empowering grassroots innovation. Whether you’re scaling vision AI for industry or experimenting with cutting-edge tools, this presentation will demonstrate how Sony is accelerating high-performance, energy-efficient vision AI for all.
Can We Use Rust to Develop Extensions for PostgreSQL? (POSETTE: An Event for ...
Can We Use Rust to Develop Extensions for PostgreSQL? (POSETTE: An Event for ...NTT DATA Technology & Innovation Can We Use Rust to Develop Extensions for PostgreSQL?
(POSETTE: An Event for Postgres 2025)
June 11, 2025
Shinya Kato
NTT DATA Japan Corporation
Artificial Intelligence in the Nonprofit Boardroom.pdf
Artificial Intelligence in the Nonprofit Boardroom.pdfOnBoard OnBoard recently partnered with Microsoft Tech for Social Impact on the AI in the Nonprofit Boardroom Survey, an initiative designed to uncover the current and future role of artificial intelligence in nonprofit governance.
Security Tips for Enterprise Azure Solutions
Security Tips for Enterprise Azure SolutionsMichele Leroux Bustamante Delivering solutions to Azure may involve a variety of architecture patterns involving your applications, APIs data and associated Azure resources that comprise the solution. This session will use reference architectures to illustrate the security considerations to protect your Azure resources and data, how to achieve Zero Trust, and why it matters. Topics covered will include specific security recommendations for types Azure resources and related network security practices. The goal is to give you a breadth of understanding as to typical security requirements to meet compliance and security controls in an enterprise solution.
OWASP Barcelona 2025 Threat Model Library
OWASP Barcelona 2025 Threat Model LibraryPetraVukmirovic Threat Model Library Launch at OWASP Barcelona 2025
https://owasp.org/www-project-threat-model-library/
Tech-ASan: Two-stage check for Address Sanitizer - Yixuan Cao.pdf
Tech-ASan: Two-stage check for Address Sanitizer - Yixuan Cao.pdfcaoyixuan2019 A presentation at Internetware 2025.
High Availability On-Premises FME Flow.pdf
High Availability On-Premises FME Flow.pdfSafe Software FME Flow is a highly robust tool for transforming data both automatically and by user-initiated workflows. At the Finnish telecommunications company Elisa, FME Flow serves processes and internal stakeholders that require 24/7 availability from underlying systems, while imposing limitations on the use of cloud based systems. In response to these business requirements, Elisa has implemented a high-availability on-premises setup of FME Flow, where all components of the system have been duplicated or clustered. The goal of the presentation is to provide insights into the architecture behind the high-availability functionality. The presentation will show in basic technical terms how the different parts of the system work together. Basic level understanding of IT technologies is required to understand the technical portion of the presentation, namely understanding the purpose of the following components: load balancer, FME Flow host nodes, FME Flow worker nodes, network file storage drives, databases, and external authentication services. The presentation will also outline our lessons learned from the high-availability project, both benefits and challenges to consider.
ENERGY CONSUMPTION CALCULATION IN ENERGY-EFFICIENT AIR CONDITIONER.pdf
ENERGY CONSUMPTION CALCULATION IN ENERGY-EFFICIENT AIR CONDITIONER.pdfMuhammad Rizwan Akram DC Inverter Air Conditioners are revolutionizing the cooling industry by delivering affordable,
energy-efficient, and environmentally sustainable climate control solutions. Unlike conventional
fixed-speed air conditioners, DC inverter systems operate with variable-speed compressors that
modulate cooling output based on demand, significantly reducing energy consumption and
extending the lifespan of the appliance.
These systems are critical in reducing electricity usage, lowering greenhouse gas emissions, and
promoting eco-friendly technologies in residential and commercial sectors. With advancements in
compressor control, refrigerant efficiency, and smart energy management, DC inverter air conditioners
have become a benchmark in sustainable climate control solutions
No-Code Workflows for CAD & 3D Data: Scaling AI-Driven Infrastructure
No-Code Workflows for CAD & 3D Data: Scaling AI-Driven InfrastructureSafe Software When projects depend on fast, reliable spatial data, every minute counts.
AI Clearing needed a faster way to handle complex spatial data from drone surveys, CAD designs and 3D project models across construction sites. With FME Form, they built no-code workflows to clean, convert, integrate, and validate dozens of data formats – cutting analysis time from 5 hours to just 30 minutes.
Join us, our partner Globema, and customer AI Clearing to see how they:
-Automate processing of 2D, 3D, drone, spatial, and non-spatial data
-Analyze construction progress 10x faster and with fewer errors
-Handle diverse formats like DWG, KML, SHP, and PDF with ease
-Scale their workflows for international projects in solar, roads, and pipelines
If you work with complex data, join us to learn how to optimize your own processes and transform your results with FME.
vertical-cnc-processing-centers-drillteq-v-200-en.pdf
vertical-cnc-processing-centers-drillteq-v-200-en.pdfAmirStern2 מכונות CNC קידוח אנכיות הן הבחירה הנכונה והטובה ביותר לקידוח ארונות וארגזים לייצור רהיטים. החלק נוסע לאורך ציר ה-x באמצעות ציר דיגיטלי מדויק, ותפוס ע"י צבת מכנית, כך שאין צורך לבצע setup (התאמות) לגדלים שונים של חלקים.
“Addressing Evolving AI Model Challenges Through Memory and Storage,” a Prese...
“Addressing Evolving AI Model Challenges Through Memory and Storage,” a Prese...Edge AI and Vision Alliance
“Why It’s Critical to Have an Integrated Development Methodology for Edge AI,...
“Why It’s Critical to Have an Integrated Development Methodology for Edge AI,...Edge AI and Vision Alliance
“Key Requirements to Successfully Implement Generative AI in Edge Devices—Opt...
“Key Requirements to Successfully Implement Generative AI in Edge Devices—Opt...Edge AI and Vision Alliance
“From Enterprise to Makers: Driving Vision AI Innovation at the Extreme Edge,...
“From Enterprise to Makers: Driving Vision AI Innovation at the Extreme Edge,...Edge AI and Vision Alliance
Can We Use Rust to Develop Extensions for PostgreSQL? (POSETTE: An Event for ...
Can We Use Rust to Develop Extensions for PostgreSQL? (POSETTE: An Event for ...NTT DATA Technology & Innovation
Lecture-7 : Semiconductor Power Switching Devices-4
- 1. Semiconductor Power Switching Devices-4 (Lecture-7) R S Ananda Murthy Associate Professor and Head Department of Electrical & Electronics Engineering, Sri Jayachamarajendra College of Engineering, Mysore 570 006 R S Ananda Murthy Semiconductor Power Switching Devices-4
- 2. Structure of Power BJT IB IC vBE vCE (c)(a) C B E − + − + C B (b) C EB E n p n n+ n− p n+ Structure shown in Figure (a) is preferred for low voltage ratings. Structure shown in Figure (b) is preferred for high voltage ratings. But this tends to increase the on-state voltage drop. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 3. BJT as a Power Switching Device CE V VBE RB VCB IE VCE 1 VCE 2 VBE + − VBB IB IC IB RC VCC + − + − (b)(a) 0 B E + − + − > C CE configuration is always used as it offers high input impedance and higher current gain. When transistor is on IC = ICS = [VCC −VCE(sat)]/RC. IBS = ICS/β is the base current that just turns on the BJT. For faster turn on usually we make IB > IBS. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 4. CE Output Characteristics of Power BJT VCCVCE(Sat) VCE Quasi− saturation zone IB IC RC VCC IB4 IB3 IB2 IB1 IB increasing Linear zone Hard saturation line Cutoff zone Load Line = 0 b a d e c Off On Since hard saturation increases the turn-off time, power BJTs are always operated in cut-off and quasi-saturation regions. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 5. Darlington Connection for Higher Current Gain So overall current gain is and voltage drop is T1 T2 Darlington connection gives higher β but it increases leakage current, on-state voltage drop, and reduces the switching frequency. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 6. Switching Times of Power BJT iB ICS ICS ICS td tr tn ts tf ton toff iC IB1 vCE B2−I to VCC VCE(Sat) 0.9 0.1 t t t (c) (b) (a) R S Ananda Murthy Semiconductor Power Switching Devices-4
- 7. Preferred Base Current Waveform for BJT By reducing like this, BJT is prevented from entering into hard saturation 0 By making IB1 > IBS for a brief duration during turn on both td and tr and hence ton is reduced. To turn off BJT gradually apply a negative base current with a peak of −IB2 which falls to zero after some time. This reduces ts and tf and hence toff . R S Ananda Murthy Semiconductor Power Switching Devices-4
- 8. Baker’s Clamping Circuit to Reduce Storage Time Q D1 D2 D3 D4 C B E 0 X D2, D3, D4 are low voltage diodes. D1 should be a high voltage diode. D4 is needed to provide path for negative base current while turning off the BJT. When BJT turns on, VCE tends to drop causing D1 to turn on. This decreases IB preventing BJT going into hard saturation. When D1 is on, as all diode voltages are equal, by KVL we get VCE = VX −VD1 = VBE +VD2 +VD3 −VD1 = VBE +VD2 . R S Ananda Murthy Semiconductor Power Switching Devices-4
- 9. FSOA and RSOA of Power BJT FSOA shown in Fig (a) is applicable when the BJT is turned on by applying a positive base current. RSOA shown in Fig (b) is applicable when the BJT is turned off by applying a negative base current. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 10. Parallel Operation of BJT T1 T2 Let permissible Let permissible By KVL Let T1 and T2 be identical transistors. When they are on Then Suppose V and A then, If IC1 increases, the voltage across emitter resistor gives a negative feedback and reduces VBE1. Then, IB1 decreases causing a reduction in IC1. But emitter resistors cause power loss which reduces the efficiency of the circuit. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 11. Base Drive Isolation using Opto-coupler Logic drive circuit Amplifier VCC B Q E COpto−coupler Since BJT needs a continuous base current, isolation of base drive is possible only by using an opto-coupler. But this needs additional VCC and amplifier which makes the base drive circuit bulkier if more power BJTs are to be used. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 12. Specifications of Power BJT BU208D R S Ananda Murthy Semiconductor Power Switching Devices-4
- 13. Specifications of Power BJT BU208D R S Ananda Murthy Semiconductor Power Switching Devices-4
- 14. Specifications of Power BJT BU208D R S Ananda Murthy Semiconductor Power Switching Devices-4
- 15. Specifications of Power BJT BU208D Safe Operating Area increases for pulsed operation. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 16. Specifications of Power BJT BU208D R S Ananda Murthy Semiconductor Power Switching Devices-4
- 17. Demerits of Power BJT Though BJT is fully-controlled, it has the following demerits — Since it is continuously triggered, it needs opto-coupler isolated bulky base drive circuit. It cannot block high reverse voltage. It has low current gain (β) which varies with collector current and temperature. Due to this, typically base current of the order of few amperes is needed for controlling the BJT. β can be increased using Darlington connection. But this increases leakage current, on-state voltage drop, and reduces switching frequency. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 18. Demerits of Power BJT It is prone to fail due to ‘Second Breakdown’ — due to hot spots caused by concentration of current in a narrow area in the emitter junction when the device is turned ON and in the collector junction when it is turned OFF. Its switching frequency is typically within 20 kHz. Parallel operation of BJTs is difficult due to their negative temperature coefficient of resistance. BJT cannot be protected against overload using a fuse. It cannot withstand overload. So it should be turned off immediately when there is overload. This requires sensing of overload by some method. Due to the demerits mentioned above BJTs are not preferred in modern power converters. Instead MOSFETs and IGBTs are used. R S Ananda Murthy Semiconductor Power Switching Devices-4
- 19. Next Lecture... In the next lecture we will discuss some more power semiconductor switching devices used in power electronics. Thank You. R S Ananda Murthy Semiconductor Power Switching Devices-4