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AP Lab Experiments

This document describes a lab experiment on Hall's effect. The experiment involved measuring the voltage and current through a semiconductor sample under an applied magnetic field. The results were plotted on a graph to calculate the resistance and number of charge carriers in the semiconductor. Hall's effect causes a voltage difference perpendicular to the current and magnetic field due to the Lorentz force acting on charge carriers. The Hall coefficient can be positive or negative depending on if the semiconductor is p-type or n-type.

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Laiba Yousaf
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32 views

AP Lab Experiments

This document describes a lab experiment on Hall's effect. The experiment involved measuring the voltage and current through a semiconductor sample under an applied magnetic field. The results were plotted on a graph to calculate the resistance and number of charge carriers in the semiconductor. Hall's effect causes a voltage difference perpendicular to the current and magnetic field due to the Lorentz force acting on charge carriers. The Hall coefficient can be positive or negative depending on if the semiconductor is p-type or n-type.

Uploaded by

Laiba Yousaf
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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SUBJECT: APPLIED PHYSICS

LAB EXPERIMENT: HALL’S EFFECT


SUBMITTED TO: Ma’am SAIMA KHALID
SUBMITTED BY: GROUP NO:4
LAIBA YOUSAF
SEHRENA SHAHBAAZ
MAHNOOR IMTIAZ

LCWU
LAHORE COLLEGE FOR WOMEN UNIVERSITY
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 DIAGRAM:

 HALL’S EFECT:
 DEFINITION:
The Hall’s effect is the production of a
voltage difference (the Hall voltage) across an
electrical conductor that is transverse to an electric
current in the conductor and to an applied magnetic
field perpendicular to the current. It was discovered
by Edwin Hall in 1879.
 PRINCIPLE:
The principle of Hall’s Effect is when current
carrying semiconductor is kept in magnetic field the charge
carrier of semi-conductor experiences a force in direction
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perpendicular to both magnetic field and current. In semi-
conductor the Hall’s coefficient can be positive or negative
depending upon P and N –type.
 PROCEDURE:
1. Set up apparatus according to the diagram. Vary the
voltage with the help of knob you will see change in
current.
2. By using Ohm’s law:
R= V/I
3. We calculate the resistance or simplify calculate the
slope of graph and use following formula:
R=1/SLOPE
4. For the number of charge carriers (n) we will use:-
n=1/Re
 CALCULATIONS AND OBSERVATIONS:
NO, of Voltage CURRENT
Obs (V) (I)
1 3 0.6
2 4.5 0.9
3 6 1.5
4 1.5 0.3

No, of changes in Semiconductor =1/R


Slope of graph = change in V/change in R
Result:

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(X1,y1) =(3,l)
(X2,y2) =(6,2)

 CIRCUIT DIAGRAM:

 GRAPHICAL REPRESENTATION:

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 GENERAL DISCRIPTION :
A Hall’s effect can also occur across
a void or hole in a semiconductor or metal plate, when current
is injected via contacts that lie on the boundary or edge of the
void or hole, and the charge flows outside the void or hole, in
the metal or semiconductor. This Hall’s effect becomes
observable in a perpendicular applied magnetic field across
voltage contacts that lie on the boundary of the void on either
side of a line connecting the current contacts. It exhibits
apparent sign reversal in comparison to the standard "ordinary
Hall effect" in the simply connected specimen, and depends
only on the current injected from within the void.

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The Hall's coefficient is defined as the
ratio of the induced electric field to the product of the current
density and the applied magnetic field. It is a characteristic of
the material from which the conductor is made, since its value
depends on the type, number, and properties of the charge
carriers that constitute the current.

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